KR100742308B1 - 불휘발성 반도체기억장치 및 상기 제조방법 - Google Patents

불휘발성 반도체기억장치 및 상기 제조방법 Download PDF

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Publication number
KR100742308B1
KR100742308B1 KR1020010013228A KR20010013228A KR100742308B1 KR 100742308 B1 KR100742308 B1 KR 100742308B1 KR 1020010013228 A KR1020010013228 A KR 1020010013228A KR 20010013228 A KR20010013228 A KR 20010013228A KR 100742308 B1 KR100742308 B1 KR 100742308B1
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South Korea
Prior art keywords
insulating film
film
gate
memory device
silicon oxide
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KR20010107537A (ko
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코바야시타카시
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020010013228A 2000-05-26 2001-03-14 불휘발성 반도체기억장치 및 상기 제조방법 Expired - Fee Related KR100742308B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-161126 2000-05-26
JP2000161126A JP4078014B2 (ja) 2000-05-26 2000-05-26 不揮発性半導体記憶装置及びその製造方法

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KR20010107537A KR20010107537A (ko) 2001-12-07
KR100742308B1 true KR100742308B1 (ko) 2007-07-25

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US (2) US6759706B2 (enExample)
JP (1) JP4078014B2 (enExample)
KR (1) KR100742308B1 (enExample)
TW (1) TWI273697B (enExample)

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KR100998968B1 (ko) 2003-12-05 2010-12-09 매그나칩 반도체 유한회사 비휘발성 메모리 소자의 제조 방법
KR100691943B1 (ko) * 2003-12-11 2007-03-09 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20050189608A1 (en) * 2004-02-26 2005-09-01 Erh-Kun Lai [shallow trench isolation and method of forming the same]
KR100538884B1 (ko) * 2004-03-30 2005-12-23 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
DE112005001385T5 (de) * 2004-06-15 2007-05-10 Griffin analytical Technologies Inc., West Lafayette Analyseinstrumente, -baugruppen und -verfahren
KR100626378B1 (ko) * 2004-06-25 2006-09-20 삼성전자주식회사 반도체 장치의 배선 구조체 및 그 형성 방법
US7227201B2 (en) * 2004-08-27 2007-06-05 Texas Instruments Incorporated CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers
JP4551795B2 (ja) * 2005-03-15 2010-09-29 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US8680461B2 (en) 2005-04-25 2014-03-25 Griffin Analytical Technologies, L.L.C. Analytical instrumentation, apparatuses, and methods
KR100632655B1 (ko) * 2005-05-11 2006-10-12 주식회사 하이닉스반도체 플래쉬 메모리소자 및 이의 제조방법
JP2006319294A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の高電圧用ゲート酸化膜形成方法及び半導体素子の高電圧用トランジスタ
KR100655435B1 (ko) * 2005-08-04 2006-12-08 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
TWI277180B (en) * 2005-12-14 2007-03-21 Fujitsu Ltd Semiconductor device and the manufacturing method thereof
JP5013050B2 (ja) * 2006-06-14 2012-08-29 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100812237B1 (ko) * 2006-08-25 2008-03-10 삼성전자주식회사 임베디드 플래시 메모리 장치의 제조 방법
US7518912B2 (en) * 2006-08-25 2009-04-14 Powerchip Semiconductor Corp. Multi-level non-volatile memory
US7556999B2 (en) * 2006-09-12 2009-07-07 Macronix International Co., Ltd. Method for fabricating non-volatile memory
US7992424B1 (en) 2006-09-14 2011-08-09 Griffin Analytical Technologies, L.L.C. Analytical instrumentation and sample analysis methods
KR100822806B1 (ko) * 2006-10-20 2008-04-18 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성 방법
US7955960B2 (en) * 2007-03-22 2011-06-07 Hynix Semiconductor Inc. Nonvolatile memory device and method of fabricating the same
US7439134B1 (en) * 2007-04-20 2008-10-21 Freescale Semiconductor, Inc. Method for process integration of non-volatile memory cell transistors with transistors of another type
JP5052580B2 (ja) * 2009-09-30 2012-10-17 株式会社東芝 半導体装置及びその製造方法
JP5778900B2 (ja) * 2010-08-20 2015-09-16 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5951213B2 (ja) * 2011-10-11 2016-07-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
CN103137455B (zh) * 2011-11-29 2015-10-14 上海华虹宏力半导体制造有限公司 拥有低压逻辑器件和高压器件的芯片制造方法
US9245898B2 (en) * 2014-06-30 2016-01-26 Sandisk Technologies Inc. NAND flash memory integrated circuits and processes with controlled gate height
CN106129059A (zh) * 2016-07-27 2016-11-16 深圳市航顺芯片技术研发有限公司 一种基于cmos深亚微米工艺的eeprom结构
US10608090B2 (en) * 2017-10-04 2020-03-31 Silicon Storage Technology, Inc. Method of manufacturing a split-gate flash memory cell with erase gate
CN112133672B (zh) * 2019-06-24 2024-04-12 华邦电子股份有限公司 闪存装置及其制造方法
CN114050159B (zh) * 2021-11-12 2024-11-19 武汉新芯集成电路股份有限公司 存储器件及其制作方法

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KR20000035655A (ko) * 1998-11-26 2000-06-26 가네꼬 히사시 반도체 장치 및 그 제조 방법

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US20040169250A1 (en) 2004-09-02
US20010045590A1 (en) 2001-11-29
US6759706B2 (en) 2004-07-06
TWI273697B (en) 2007-02-11
JP4078014B2 (ja) 2008-04-23
KR20010107537A (ko) 2001-12-07
JP2001338996A (ja) 2001-12-07
US7132330B2 (en) 2006-11-07

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