JPS6433935A - Formation of silicon oxide film - Google Patents
Formation of silicon oxide filmInfo
- Publication number
- JPS6433935A JPS6433935A JP18962887A JP18962887A JPS6433935A JP S6433935 A JPS6433935 A JP S6433935A JP 18962887 A JP18962887 A JP 18962887A JP 18962887 A JP18962887 A JP 18962887A JP S6433935 A JPS6433935 A JP S6433935A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- less
- gas atmosphere
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To make it possible to form a silicon oxide film, which has excellent insulation breakdown strength and can be utilized as a gate oxide film having less traps, by performing high temperature annealing of the silicon oxide film, which is formed in a wet atmosphere including steam at specified temperature or less, in an inactivated gas atmosphere at a specified temperature or more. CONSTITUTION:A thin silicon oxide film is formed on a silicon substrate or polysilicon. At this time, the silicon oxide film is formed in a wet atmosphere including steam at 900 deg.C or less. Thereafter, high temperature annealing is performed at 900 deg.C or more in an inactive gas atmosphere. For example, the oxide film is formed in the wet atmosphere at 850 deg.C on the silicon substrate. Thereafter, the oxide film is annealed for one hour at 1,000 deg.C in a nitrogen gas atmosphere or in an argon gas atmosphere. Thus, the ideal silicon oxide film as a gate oxide film, which is characterized by excellent insulation breakdown strength, less traps, high reliability and a thin semiconductor device, can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18962887A JPS6433935A (en) | 1987-07-29 | 1987-07-29 | Formation of silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18962887A JPS6433935A (en) | 1987-07-29 | 1987-07-29 | Formation of silicon oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6433935A true JPS6433935A (en) | 1989-02-03 |
Family
ID=16244477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18962887A Pending JPS6433935A (en) | 1987-07-29 | 1987-07-29 | Formation of silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6433935A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02248047A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of sio2 film |
| JPH02248046A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of sio2 film |
| JPH02248045A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of sio2 film |
| US5506178A (en) * | 1992-12-25 | 1996-04-09 | Sony Corporation | Process for forming gate silicon oxide film for MOS transistors |
| US6759706B2 (en) * | 2000-05-26 | 2004-07-06 | Renesas Technology Corp. | Nonvolatile semiconductor memory device with improved gate oxide film arrangements |
| WO2008149487A1 (en) * | 2007-05-29 | 2008-12-11 | Shin-Etsu Handotai Co., Ltd. | Method for forming silicon oxide film for soi wafer |
-
1987
- 1987-07-29 JP JP18962887A patent/JPS6433935A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02248047A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of sio2 film |
| JPH02248046A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of sio2 film |
| JPH02248045A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of sio2 film |
| US5506178A (en) * | 1992-12-25 | 1996-04-09 | Sony Corporation | Process for forming gate silicon oxide film for MOS transistors |
| US6759706B2 (en) * | 2000-05-26 | 2004-07-06 | Renesas Technology Corp. | Nonvolatile semiconductor memory device with improved gate oxide film arrangements |
| WO2008149487A1 (en) * | 2007-05-29 | 2008-12-11 | Shin-Etsu Handotai Co., Ltd. | Method for forming silicon oxide film for soi wafer |
| US8053334B2 (en) | 2007-05-29 | 2011-11-08 | Shin-Etsu Handotai Co., Ltd. | Method for forming silicon oxide film of SOI wafer |
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