KR920017171A - Method of forming buried layer of bipolar transistor - Google Patents
Method of forming buried layer of bipolar transistor Download PDFInfo
- Publication number
- KR920017171A KR920017171A KR1019910002387A KR910002387A KR920017171A KR 920017171 A KR920017171 A KR 920017171A KR 1019910002387 A KR1019910002387 A KR 1019910002387A KR 910002387 A KR910002387 A KR 910002387A KR 920017171 A KR920017171 A KR 920017171A
- Authority
- KR
- South Korea
- Prior art keywords
- buried layer
- bipolar transistor
- low temperature
- forming buried
- oxide film
- Prior art date
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Landscapes
- Bipolar Transistors (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 (a)∼(b)는 본 발명에 따른 제조공정도이다.2 (a) to (b) are manufacturing process diagrams according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910002387A KR920017171A (en) | 1991-02-13 | 1991-02-13 | Method of forming buried layer of bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910002387A KR920017171A (en) | 1991-02-13 | 1991-02-13 | Method of forming buried layer of bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920017171A true KR920017171A (en) | 1992-09-26 |
Family
ID=67396757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910002387A KR920017171A (en) | 1991-02-13 | 1991-02-13 | Method of forming buried layer of bipolar transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR920017171A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100454075B1 (en) * | 2002-06-11 | 2004-10-26 | 동부전자 주식회사 | Method of manufacturing bipolar transistor in semiconductor device |
-
1991
- 1991-02-13 KR KR1019910002387A patent/KR920017171A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100454075B1 (en) * | 2002-06-11 | 2004-10-26 | 동부전자 주식회사 | Method of manufacturing bipolar transistor in semiconductor device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |