KR950030236A - Method for manufacturing contact electrode of compound semiconductor device - Google Patents

Method for manufacturing contact electrode of compound semiconductor device Download PDF

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Publication number
KR950030236A
KR950030236A KR1019940007893A KR19940007893A KR950030236A KR 950030236 A KR950030236 A KR 950030236A KR 1019940007893 A KR1019940007893 A KR 1019940007893A KR 19940007893 A KR19940007893 A KR 19940007893A KR 950030236 A KR950030236 A KR 950030236A
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KR
South Korea
Prior art keywords
compound semiconductor
contact electrode
metal layer
semiconductor device
predetermined
Prior art date
Application number
KR1019940007893A
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Korean (ko)
Inventor
김남준
김돈수
김앙서
유순재
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940007893A priority Critical patent/KR950030236A/en
Publication of KR950030236A publication Critical patent/KR950030236A/en

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  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 화합물 반도체소자의 접촉전극 제조방법에 관한 것으로서, 화합물 반도체기판상에 소정의 에피성장 공정을 진행하여 반도체레이저나 광다이오드를 형성하고, 상기 에피 서장층이나 반도체기판의 타측면에 금속층 및 내열성이 강한 절연막을 순차적으로 도포한 후, 전기로나 RTP공정을 사용하여 소정의 가스 분위기에서 소정의 온도에서 열처리하여 저저항 접촉전극을 형성하였으므로, 금속층이 산소등과 같은 미량의 불순물과 반응하지 않아 금속층의 표면이 깨끗하고 양호하여 재현성이 우수하여 공정수율 및 소자 동작의 신뢰성이 향상된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact electrode of a compound semiconductor device, wherein a predetermined epitaxial growth process is carried out on a compound semiconductor substrate to form a semiconductor laser or a photodiode, and a metal layer and After applying a heat resistant insulating film in sequence, a low resistance contact electrode was formed by heat treatment at a predetermined temperature in a predetermined gas atmosphere using an electric furnace or an RTP process. The surface of the metal layer is clean and good, and the reproducibility is excellent, thereby improving process yield and device operation reliability.

Description

화합물 반도체소자의 접촉전극 제조방법Method for manufacturing contact electrode of compound semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (3)

화합물 반도체기판상에 소정의 에피 성장을 진행하여 화합물 반도체소자를 형성하는 공정과, 상기 에피택셜층의 상부와 반도체기판의 타측면에 금속층을 형성하는 공정과, 상기 금속층상에 조정재질의 절연막을 형성하는 공정과, 상기 구조의 반도체기판을 소정의 가스 분위기에서 소정온도로 열처리하여 접촉전극을 형성하는 공정을 포함하는 화합물 반도체소자의 접촉전극 제조방법.Forming a compound semiconductor device by performing a predetermined epitaxial growth on the compound semiconductor substrate, forming a metal layer on the upper side of the epitaxial layer and the other side of the semiconductor substrate, and an insulating film having an adjustment material on the metal layer. And forming a contact electrode by heat-treating the semiconductor substrate having the structure at a predetermined temperature in a predetermined gas atmosphere. 제1항에 있어서, 상기 절연막이 산화막, 질화막 또는 산화질화막으로 이루어지는 군에서 임의로 선택되는 어느 하나의 절연재질로 형성되는 것을 특징으로 하는 화합물 반도체 소자의 접촉전극 제조방법.The method of claim 1, wherein the insulating film is formed of any one insulating material selected from the group consisting of an oxide film, a nitride film, and an oxynitride film. 제1항에 있어서, 상기 열처리를 수소, 질소 또는 아르곤 분위기에서 300∼500℃정도의 온도에서 실시하는 것을 특징으로 하는 화합물 반도체소자의 접촉전극 제조방법.The method of claim 1, wherein the heat treatment is performed at a temperature of about 300 ° C. to 500 ° C. in a hydrogen, nitrogen, or argon atmosphere. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019940007893A 1994-04-15 1994-04-15 Method for manufacturing contact electrode of compound semiconductor device KR950030236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940007893A KR950030236A (en) 1994-04-15 1994-04-15 Method for manufacturing contact electrode of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940007893A KR950030236A (en) 1994-04-15 1994-04-15 Method for manufacturing contact electrode of compound semiconductor device

Publications (1)

Publication Number Publication Date
KR950030236A true KR950030236A (en) 1995-11-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940007893A KR950030236A (en) 1994-04-15 1994-04-15 Method for manufacturing contact electrode of compound semiconductor device

Country Status (1)

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KR (1) KR950030236A (en)

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