KR950030236A - Method for manufacturing contact electrode of compound semiconductor device - Google Patents
Method for manufacturing contact electrode of compound semiconductor device Download PDFInfo
- Publication number
- KR950030236A KR950030236A KR1019940007893A KR19940007893A KR950030236A KR 950030236 A KR950030236 A KR 950030236A KR 1019940007893 A KR1019940007893 A KR 1019940007893A KR 19940007893 A KR19940007893 A KR 19940007893A KR 950030236 A KR950030236 A KR 950030236A
- Authority
- KR
- South Korea
- Prior art keywords
- compound semiconductor
- contact electrode
- metal layer
- semiconductor device
- predetermined
- Prior art date
Links
Landscapes
- Light Receiving Elements (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 화합물 반도체소자의 접촉전극 제조방법에 관한 것으로서, 화합물 반도체기판상에 소정의 에피성장 공정을 진행하여 반도체레이저나 광다이오드를 형성하고, 상기 에피 서장층이나 반도체기판의 타측면에 금속층 및 내열성이 강한 절연막을 순차적으로 도포한 후, 전기로나 RTP공정을 사용하여 소정의 가스 분위기에서 소정의 온도에서 열처리하여 저저항 접촉전극을 형성하였으므로, 금속층이 산소등과 같은 미량의 불순물과 반응하지 않아 금속층의 표면이 깨끗하고 양호하여 재현성이 우수하여 공정수율 및 소자 동작의 신뢰성이 향상된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact electrode of a compound semiconductor device, wherein a predetermined epitaxial growth process is carried out on a compound semiconductor substrate to form a semiconductor laser or a photodiode, and a metal layer and After applying a heat resistant insulating film in sequence, a low resistance contact electrode was formed by heat treatment at a predetermined temperature in a predetermined gas atmosphere using an electric furnace or an RTP process. The surface of the metal layer is clean and good, and the reproducibility is excellent, thereby improving process yield and device operation reliability.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940007893A KR950030236A (en) | 1994-04-15 | 1994-04-15 | Method for manufacturing contact electrode of compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940007893A KR950030236A (en) | 1994-04-15 | 1994-04-15 | Method for manufacturing contact electrode of compound semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950030236A true KR950030236A (en) | 1995-11-24 |
Family
ID=66677478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940007893A KR950030236A (en) | 1994-04-15 | 1994-04-15 | Method for manufacturing contact electrode of compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950030236A (en) |
-
1994
- 1994-04-15 KR KR1019940007893A patent/KR950030236A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930003257A (en) | Semiconductor device and manufacturing method thereof | |
KR910019119A (en) | Single Annealing Method to Form Titanium Silicate on Semiconductor Wafers | |
KR970702585A (en) | Semiconductor device including ferroelectric memory device having lower electrode provided with oxygen barrier (SEMICONDUCTOR DEVICE COMPRISING A FERROELECTRIC MEMORY ELEMENT WITH A LOWER ELECTRODE PROVIDED WITH AN OXYGEN BARRIER) | |
KR970077334A (en) | Semiconductor device and manufacturing method thereof | |
KR950024361A (en) | Semiconductor conductive layer, device and manufacturing method thereof | |
KR960005801A (en) | Semiconductor device manufacturing method | |
JPH01251611A (en) | Manufacture of semiconductor device | |
KR890012361A (en) | Semiconductor device manufacturing method | |
KR950030236A (en) | Method for manufacturing contact electrode of compound semiconductor device | |
JPS6433935A (en) | Formation of silicon oxide film | |
KR940010194A (en) | Wiring layer formation method of semiconductor device | |
KR970054333A (en) | Resistive contact electrode formation method of compound semiconductor device | |
KR970063565A (en) | Method for forming interlayer insulating film of semiconductor device | |
KR970053379A (en) | Method of forming device isolation region | |
KR960026428A (en) | Method of manufacturing thin film transistor | |
JPS56167325A (en) | Manufacture of semiconductor device | |
KR910010629A (en) | Metal wiring film formation method | |
KR890011056A (en) | Manufacturing Method of Semiconductor Device | |
KR970013219A (en) | Barrier metal layer formation method of semiconductor device | |
KR910007116B1 (en) | Mosfet device | |
JPS6415917A (en) | Forming method of high melting-point metallic film | |
KR970063670A (en) | Method of forming a barrier metal layer of a semiconductor device | |
KR950021077A (en) | Silicide plug formation method | |
KR960009171A (en) | Capacitor manufacturing method comprising tantalum pentoxide pentoxide film | |
KR950025881A (en) | Semiconductor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |