KR950021077A - Silicide plug formation method - Google Patents

Silicide plug formation method Download PDF

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Publication number
KR950021077A
KR950021077A KR1019930028853A KR930028853A KR950021077A KR 950021077 A KR950021077 A KR 950021077A KR 1019930028853 A KR1019930028853 A KR 1019930028853A KR 930028853 A KR930028853 A KR 930028853A KR 950021077 A KR950021077 A KR 950021077A
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South Korea
Prior art keywords
film
forming
silicide
silicon
substrate
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KR1019930028853A
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Korean (ko)
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KR0130380B1 (en
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변정수
최상준
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문정환
금성일렉트론 주식회사
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Priority to KR93028853A priority Critical patent/KR0130380B1/en
Publication of KR950021077A publication Critical patent/KR950021077A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

본 발명은 종횡비가 큰 초고집적 소자에 적합한 PtSi 플러그 형성방법에 관한 것으로서, 기판상에 절연막을 증착하고 패터닝하여 콘택홀을 형성하는 스텝과, 상기 콘택홀이 완전히 채워지도록 블랭킷 실리콘막을 기판 전면에 걸쳐 두껍게 증착하는 스텝과, 상기 절연막이 노출될때까지 블랭킷 실리콘막을 에치백하여 실리콘 플러그를 형성하는 스텝과, 기판 전면에 박막의 백금막을 증착하는 스텝과, 열처리공정을 수행하여 백금 실리사이드를 형성하는 스텝과, 미반응 백금막을 제거하여 콘택홀에 실리사이드 플러그를 형성하는 스텝을 포함한다.The present invention relates to a method for forming a PtSi plug suitable for an ultra-high density device having a high aspect ratio, comprising the steps of forming a contact hole by depositing and patterning an insulating film on a substrate; Thick depositing, etching a blanket silicon film to form a silicon plug until the insulating film is exposed, depositing a thin film of platinum film on the entire surface of the substrate, and performing a heat treatment process to form platinum silicide; And removing the unreacted platinum film to form a silicide plug in the contact hole.

Description

실리사이드 플러그 형성방법Silicide plug formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도 (A)-(B)는 실리사이드 플러그 형성시 이동하는 원자에 따른 플러그의 형태 변화를 나타낸 도면(금속원자이동).4 (A)-(B) are diagrams showing the change of the shape of the plug according to the atoms moving when the silicide plug is formed (metal atom transfer).

제5도 (A)와 (B)는 실리사이드 플러그 형성시 이동하는 원자에 따른 플러그의 형태변화를 나타낸 도면(실리콘원자 이동).5 (A) and (B) are diagrams showing the change in shape of the plug according to the atoms moving when the silicide plug is formed (silicon atom transfer).

제6도 (A)-(F)는 본 발명의 실리콘 플러그를 이용한 실리사이드 플러그 형성공정도.Figure 6 (A)-(F) is a process diagram of silicide plug formation using the silicon plug of the present invention.

Claims (11)

실리콘기판(61)상에 절연막(62)을 증착하고, 패터닝하여 콘택홀(63)을 형성하는 스텝과, 상기 콘택홀(63)이 완전히 채워지도록 기판 전면에 걸쳐 블랭킷 실리콘막(64)을 두껍게 증착하는 스텝과, 상기 블랭킷 실리콘막(64)을 에치백하여 실리콘 플러그(65)를 형성하는 스텝과, 기판 전면에 박막의 백금막(66)을 증착하는 스텝과, 열처리공정을 수행하여 백금 실리사이드(67)을 형성하는 스텝과, 미반응 백금막(66)을 제거하여 콘택홀(63)에 실리사이드 플러그(67')를 형성하는 스텝을 포함하는 실리사이드 플러그 형성방법.Depositing and patterning the insulating film 62 on the silicon substrate 61 to form the contact hole 63, and thickening the blanket silicon film 64 over the entire surface of the substrate so that the contact hole 63 is completely filled. Platinum silicide by performing a deposition step, etching back the blanket silicon film 64 to form a silicon plug 65, depositing a thin platinum film 66 on the entire surface of the substrate, and performing a heat treatment process. And forming a silicide plug (67 ') in the contact hole (63) by removing the unreacted platinum film (66). 제1항에 있어서, 실리콘기판(61)은 소오스/드레인영역이 형성된 기판인 것을 특징으로 하는 실리사이드 플러그 형성방법.The method of claim 1, wherein the silicon substrate (61) is a substrate on which source / drain regions are formed. 제1항에 있어서, 실리콘기판(61)대신 내열 실리사이드(WSi2)나 고융점 금속상에 형성된 Al(refractory capped Al)배선막이 사용될 수도 있는 것을 특징으로 하는 실리사이드 플러그 형성방법.The method for forming a silicide plug according to claim 1, wherein an Al (refractory capped Al) wiring film formed on a heat resistant silicide (WSi 2 ) or a high melting point metal may be used instead of the silicon substrate (61). 제1항에 있어서, 절연막(62)으로 산화막이 사용되는 것을 특징으로 하는 실리사이드 플러그 형성방법.A method of forming a silicide plug according to claim 1, wherein an oxide film is used as the insulating film (62). 제1항에 있어서, 블랭킷 실리콘막(64)으로 폴리실리콘막을 사용하는 것을 특징으로 하는 실리사이드 플러그 형성방법.A method of forming a silicide plug according to claim 1, wherein a polysilicon film is used as the blanket silicon film (64). 제5항에 있어서, 폴리실리콘막을 저압 증착법으로 600℃ 이상에서 증착하는 것을 특징으로 하는 실리사이드 플러그 형성방법.The method of forming a silicide plug according to claim 5, wherein the polysilicon film is deposited at 600 ° C or higher by low pressure deposition. 제1항에 있어서, 블랭킷 실리콘막(64)으로 비정질 실리콘막을 사용하는 것을 특징으로 하는 실리사이드 플러그 형성방법.A method of forming a silicide plug according to claim 1, wherein an amorphous silicon film is used as the blanket silicon film (64). 제7항에 있어서, 비정질실리콘막을 저압 증착법으로 500℃ 정도의 온도에서 증착하는 것을 특징으로 하는 실리사이드 플러그 형성방법.The method of claim 7, wherein the amorphous silicon film is deposited at a temperature of about 500 ° C. by low pressure deposition. 제1항에 있어서, 실리콘플러그(65)형성시 절연막(62)이 노출될때까지 블랭킷 실리콘막(64)을 에치백하는 것을 특징으로 하는 실리사이EM 플러그 형성방법.The method of claim 1, wherein in forming the silicon plug (65), the blanket silicon film (64) is etched back until the insulating film (62) is exposed. 제1항에 있어서, 백금 실리사이드(67)를 형성하기 위한 열처리온도가 250~350℃인 것을 특징으로 하는 실리사이드 플러그 형성방법.The method of claim 1, wherein the heat treatment temperature for forming the platinum silicide (67) is 250 to 350 ° C. 제1항에 있어서, 백금 실리사이드(67)를 형성하기 위한 열처리시 분위기 개스가 질소개스, 아르곤개스 또는 포밍개스(N2/H2)중 하나인 것을 특징으로 하는 실리사이드 플러그 형성방법.The method of claim 1, wherein the atmosphere gas during the heat treatment to form the platinum silicide (67) is one of nitrogen gas, argon gas or forming gas (N 2 / H 2 ). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR93028853A 1993-12-21 1993-12-21 Forming method of silicide plug KR0130380B1 (en)

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KR93028853A KR0130380B1 (en) 1993-12-21 1993-12-21 Forming method of silicide plug

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KR93028853A KR0130380B1 (en) 1993-12-21 1993-12-21 Forming method of silicide plug

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KR950021077A true KR950021077A (en) 1995-07-26
KR0130380B1 KR0130380B1 (en) 1998-04-06

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KR100861796B1 (en) * 2007-01-18 2008-10-08 주식회사 테라세미콘 Method for fabricating interconnection of semiconductor device
WO2008088199A1 (en) * 2007-01-18 2008-07-24 Terasemicon Corporation. Method for fabricating semiconductor device

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