KR870004528A - Manufacturing method of semiconductor integrated circuit - Google Patents

Manufacturing method of semiconductor integrated circuit Download PDF

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Publication number
KR870004528A
KR870004528A KR1019850007556A KR850007556A KR870004528A KR 870004528 A KR870004528 A KR 870004528A KR 1019850007556 A KR1019850007556 A KR 1019850007556A KR 850007556 A KR850007556 A KR 850007556A KR 870004528 A KR870004528 A KR 870004528A
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KR
South Korea
Prior art keywords
layer
heat
integrated circuit
manufacturing
semiconductor integrated
Prior art date
Application number
KR1019850007556A
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Korean (ko)
Other versions
KR880001956B1 (en
Inventor
이은구
Original Assignee
허신구
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 허신구, 주식회사 금성사 filed Critical 허신구
Priority to KR1019850007556A priority Critical patent/KR880001956B1/en
Publication of KR870004528A publication Critical patent/KR870004528A/en
Application granted granted Critical
Publication of KR880001956B1 publication Critical patent/KR880001956B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

반도체 집적회로의 제조방법Manufacturing method of semiconductor integrated circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 가-라는 본 발명의 제조 공정별 단계를 도시한 도면.1 is a diagram showing the manufacturing process-specific steps of the present invention.

Claims (1)

P형 기판(1)에 소오스, 드레인(2)이됨 부분의 게이트 산화막을 제거하고 내열금속인 몰리브레늄(Molybdenum)을 전자 비임 증착 방법으로 전면에 증착하여 몰리브데늄층(3)을 상측 전면상에 형성하고, 그 위에 실리콘을 이온 주입하여 수소 분위기에서 열처리하여 실리콘층(4)위에 실리사이드층(5)을 형성하고 나머지 부분의 몰리브데늄층(3')을 과산화수소(H2O2)로 에칭(eching)하여 벗겨낸 다음 중간층이며 절연층의 인(P°)을 포함하는 산화막(7)을 증착하여 열처리한다음 소오스 및 드레인의 중간부분을 에칭하여 제거해서 알루니늄을 증착하여 전극(8)을 형성한 것을 특징으로 하는 반도체 집적회로의 제조방법.Molybdenum layer 3 is deposited on the entire surface by removing the gate oxide film on the portion of the source and drain 2 of the P-type substrate 1 and depositing molybdenum, a heat-resistant metal, on the entire surface by electron beam deposition. On the silicon layer and ion-implanted thereon to heat-treat in a hydrogen atmosphere to form a silicide layer 5 on the silicon layer 4 and to form the remaining molybdenum layer 3 'with hydrogen peroxide (H 2 O 2 ). After etching, the oxide layer 7 is removed and heat-treated by depositing an oxide film 7 containing phosphorus (P °) of the insulating layer. The intermediate portions of the source and drain are etched and removed to deposit aluminum. (8) is formed, The manufacturing method of the semiconductor integrated circuit characterized by the above-mentioned. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850007556A 1985-10-15 1985-10-15 Method of producing semiconductor integrated circuit KR880001956B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019850007556A KR880001956B1 (en) 1985-10-15 1985-10-15 Method of producing semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019850007556A KR880001956B1 (en) 1985-10-15 1985-10-15 Method of producing semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
KR870004528A true KR870004528A (en) 1987-05-11
KR880001956B1 KR880001956B1 (en) 1988-10-04

Family

ID=19243149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007556A KR880001956B1 (en) 1985-10-15 1985-10-15 Method of producing semiconductor integrated circuit

Country Status (1)

Country Link
KR (1) KR880001956B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100364831B1 (en) * 2000-03-20 2002-12-16 엘지.필립스 엘시디 주식회사 Etching solution for Molybdenum metal layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100364831B1 (en) * 2000-03-20 2002-12-16 엘지.필립스 엘시디 주식회사 Etching solution for Molybdenum metal layer

Also Published As

Publication number Publication date
KR880001956B1 (en) 1988-10-04

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