KR930001439A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR930001439A
KR930001439A KR1019910009933A KR910009933A KR930001439A KR 930001439 A KR930001439 A KR 930001439A KR 1019910009933 A KR1019910009933 A KR 1019910009933A KR 910009933 A KR910009933 A KR 910009933A KR 930001439 A KR930001439 A KR 930001439A
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KR
South Korea
Prior art keywords
film
silicon
tungsten silicide
silicon film
manufacturing
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Application number
KR1019910009933A
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Korean (ko)
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KR940002408B1 (en
Inventor
최문희
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김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910009933A priority Critical patent/KR940002408B1/en
Publication of KR930001439A publication Critical patent/KR930001439A/en
Application granted granted Critical
Publication of KR940002408B1 publication Critical patent/KR940002408B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate

Abstract

내용 없음No content

Description

반도체 장치의 제조 방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 이 발명에 따라 층간절연막을 개선하여 제조한 EPROM의 단면도.4 is a cross-sectional view of an EPROM manufactured by improving an interlayer insulating film according to the present invention.

제5a 내지 g도는 이 발명에 따른 반도체 장치의 제조 방법에 의한 제조공정도이다.5A to G are manufacturing process drawings according to the method for manufacturing a semiconductor device according to the present invention.

Claims (4)

실리콘 기판(10)의 주표면상에 소자분리영역(11)을 형성시키는 공정, 이 소자분리영역에 의해 분리된 상기 실리콘 기판의 소자 영역상에 게이트 산화막(12)을 형성시키는 공정, 상기 게이트 산화막(12)과 소자분리영역(11)에 불순물을 도핑시켜 제1실리콘 막(14)을 비정질 실리콘막(13)을 이용하여 형성시키는 공정, 상기 제1실리콘막(14)상에 비정질 실리콘막을 열산화하여 형성된 얇은 산화막(15)과 CVD법에 의한 질화막(16), 그리고 질화막을 열산화시켜 얻은 얇은 산화막(17)으로 구성된 ONO 구조를 층간 절연막으로 하는 공정, 상기 ONO 구조위에 제2실리콘막(20)을 비정질 실리콘막(18)을 이용하여 형성시키는 공정, 상기 제2실리콘막(20)상에 텅스텐 실리사이드 막(19)을 형성시키는 공정, 상기 텅스텐 실리사이드막(19)과 제2실리콘막(20), ONO 구조, 제1실리콘막(14)을 설정된 패턴을 가진 마스크를 사용해서 선택적으로 식각시키는 공정, 상기 텅스텐 실리사이드막(19)을 유지한 상태로 선택산화시켜 제1, 제2실리콘막(14,20)의 측벽부에 두꺼운 절연막(22)을 형성시키는 공정, 상기 텅스텐 실리사이드막(19)이 선택산화과정에서 형성된 매우 얇은 산화막(21)을 제거시키는 공정 및 상기 제2실리콘막(20)과 소자분리영역(11)상에 도전층(23)을 형성시키는 공정으로 행하여지는 것을 특징으로 하는 반도체 장치의 제조방법.Forming a device isolation region 11 on the main surface of the silicon substrate 10, forming a gate oxide film 12 on the element region of the silicon substrate separated by the device isolation region, the gate oxide film (12) and the device isolation region (11) by doping impurities to form the first silicon film 14 using the amorphous silicon film 13, an amorphous silicon film is opened on the first silicon film 14 A step of forming an interlayer insulating film with an ONO structure composed of a thin oxide film 15 formed by oxidation, a nitride film 16 by CVD, and a thin oxide film 17 obtained by thermal oxidation of the nitride film, and a second silicon film on the ONO structure ( 20 to form an amorphous silicon film 18, to form a tungsten silicide film 19 on the second silicon film 20, the tungsten silicide film 19 and the second silicon film ( 20), the ONO structure, the first silicon film 14 A process of selectively etching using a mask having a predetermined pattern, and selectively oxidizing the tungsten silicide film 19 while maintaining the thick insulating film 22 on the sidewalls of the first and second silicon films 14 and 20. Process to remove the very thin oxide film 21 formed during the selective oxidation of the tungsten silicide film 19 and the conductive layer 23 on the second silicon film 20 and the device isolation region 11. The semiconductor device manufacturing method characterized by the above-mentioned. 제1항에 있어서, 상기 텅스텐 실리사이드막(19)이 고융점 실리사이드로 이루어지는 것을 특징으로 하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein said tungsten silicide film (19) is made of high melting point silicide. 제1항에 있어서, 상기 텅스텐 실리사이드막(19)상에 형성된 얇은 산화막(21)이 상기 도전층(23)을 형성하기 전에 제거되는 것을 특징으로 하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein a thin oxide film (21) formed on said tungsten silicide film (19) is removed before forming said conductive layer (23). 제1항에 있어서, 상기 비정질 실리콘(13,18)의 도핑이 옥시염화인(POCl3)이나 전류이온 주입기를 이용하여 이루어지는 것을 특징으로 하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the doping of the amorphous silicon (13, 18) is performed using phosphorus oxychloride (POCl 3 ) or a current ion implanter. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910009933A 1991-06-15 1991-06-15 Manufacturing method of semiconductor device KR940002408B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910009933A KR940002408B1 (en) 1991-06-15 1991-06-15 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009933A KR940002408B1 (en) 1991-06-15 1991-06-15 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
KR930001439A true KR930001439A (en) 1993-01-16
KR940002408B1 KR940002408B1 (en) 1994-03-24

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Application Number Title Priority Date Filing Date
KR1019910009933A KR940002408B1 (en) 1991-06-15 1991-06-15 Manufacturing method of semiconductor device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246761B1 (en) * 1997-06-30 2000-03-15 윤종용 Channel displaying method of hdtv
KR100414562B1 (en) * 2001-06-29 2004-01-07 주식회사 하이닉스반도체 Method of manufacturing a nonvolatile memory cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246761B1 (en) * 1997-06-30 2000-03-15 윤종용 Channel displaying method of hdtv
KR100414562B1 (en) * 2001-06-29 2004-01-07 주식회사 하이닉스반도체 Method of manufacturing a nonvolatile memory cell

Also Published As

Publication number Publication date
KR940002408B1 (en) 1994-03-24

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