JP4078014B2 - 不揮発性半導体記憶装置及びその製造方法 - Google Patents

不揮発性半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP4078014B2
JP4078014B2 JP2000161126A JP2000161126A JP4078014B2 JP 4078014 B2 JP4078014 B2 JP 4078014B2 JP 2000161126 A JP2000161126 A JP 2000161126A JP 2000161126 A JP2000161126 A JP 2000161126A JP 4078014 B2 JP4078014 B2 JP 4078014B2
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insulating film
film
gate
field effect
region
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Expired - Fee Related
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JP2000161126A
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Japanese (ja)
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JP2001338996A5 (enExample
JP2001338996A (ja
Inventor
小林　　孝
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2000161126A priority Critical patent/JP4078014B2/ja
Priority to TW090105339A priority patent/TWI273697B/zh
Priority to KR1020010013228A priority patent/KR100742308B1/ko
Priority to US09/811,444 priority patent/US6759706B2/en
Publication of JP2001338996A publication Critical patent/JP2001338996A/ja
Priority to US10/684,379 priority patent/US7132330B2/en
Publication of JP2001338996A5 publication Critical patent/JP2001338996A5/ja
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Publication of JP4078014B2 publication Critical patent/JP4078014B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000161126A 2000-05-26 2000-05-26 不揮発性半導体記憶装置及びその製造方法 Expired - Fee Related JP4078014B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000161126A JP4078014B2 (ja) 2000-05-26 2000-05-26 不揮発性半導体記憶装置及びその製造方法
TW090105339A TWI273697B (en) 2000-05-26 2001-03-07 Nonvolatile semiconductor memory device and process for producing the same
KR1020010013228A KR100742308B1 (ko) 2000-05-26 2001-03-14 불휘발성 반도체기억장치 및 상기 제조방법
US09/811,444 US6759706B2 (en) 2000-05-26 2001-03-20 Nonvolatile semiconductor memory device with improved gate oxide film arrangements
US10/684,379 US7132330B2 (en) 2000-05-26 2003-10-15 Nonvolatile semiconductor memory device with improved gate oxide film arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000161126A JP4078014B2 (ja) 2000-05-26 2000-05-26 不揮発性半導体記憶装置及びその製造方法

Publications (3)

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JP2001338996A JP2001338996A (ja) 2001-12-07
JP2001338996A5 JP2001338996A5 (enExample) 2006-03-16
JP4078014B2 true JP4078014B2 (ja) 2008-04-23

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US (2) US6759706B2 (enExample)
JP (1) JP4078014B2 (enExample)
KR (1) KR100742308B1 (enExample)
TW (1) TWI273697B (enExample)

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US7241662B2 (en) * 2002-06-24 2007-07-10 Micron Technology, Inc. Reduction of field edge thinning in peripheral devices
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US7227201B2 (en) * 2004-08-27 2007-06-05 Texas Instruments Incorporated CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers
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JP2006319294A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の高電圧用ゲート酸化膜形成方法及び半導体素子の高電圧用トランジスタ
KR100655435B1 (ko) * 2005-08-04 2006-12-08 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
TWI277180B (en) * 2005-12-14 2007-03-21 Fujitsu Ltd Semiconductor device and the manufacturing method thereof
JP5013050B2 (ja) * 2006-06-14 2012-08-29 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100812237B1 (ko) * 2006-08-25 2008-03-10 삼성전자주식회사 임베디드 플래시 메모리 장치의 제조 방법
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JP5951213B2 (ja) * 2011-10-11 2016-07-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
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Also Published As

Publication number Publication date
US20040169250A1 (en) 2004-09-02
US20010045590A1 (en) 2001-11-29
US6759706B2 (en) 2004-07-06
KR100742308B1 (ko) 2007-07-25
TWI273697B (en) 2007-02-11
KR20010107537A (ko) 2001-12-07
JP2001338996A (ja) 2001-12-07
US7132330B2 (en) 2006-11-07

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