TWI273697B - Nonvolatile semiconductor memory device and process for producing the same - Google Patents
Nonvolatile semiconductor memory device and process for producing the same Download PDFInfo
- Publication number
- TWI273697B TWI273697B TW090105339A TW90105339A TWI273697B TW I273697 B TWI273697 B TW I273697B TW 090105339 A TW090105339 A TW 090105339A TW 90105339 A TW90105339 A TW 90105339A TW I273697 B TWI273697 B TW I273697B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- film
- gate
- memory device
- volatile semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims description 71
- 230000008569 process Effects 0.000 title claims description 24
- 230000002093 peripheral effect Effects 0.000 claims abstract description 146
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 99
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- 238000007667 floating Methods 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 40
- 238000002955 isolation Methods 0.000 claims description 36
- 230000005669 field effect Effects 0.000 claims description 35
- 230000003647 oxidation Effects 0.000 claims description 31
- 238000007254 oxidation reaction Methods 0.000 claims description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 14
- 230000005641 tunneling Effects 0.000 claims description 14
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000005496 tempering Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 4
- 238000009279 wet oxidation reaction Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 11
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical group [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 5
- 239000004576 sand Substances 0.000 claims 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 4
- 238000003491 array Methods 0.000 claims 2
- 230000001419 dependent effect Effects 0.000 claims 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 48
- 229910052681 coesite Inorganic materials 0.000 abstract description 45
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 45
- 229910052682 stishovite Inorganic materials 0.000 abstract description 45
- 229910052905 tridymite Inorganic materials 0.000 abstract description 45
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000010408 film Substances 0.000 description 334
- 239000010410 layer Substances 0.000 description 86
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 28
- 238000001459 lithography Methods 0.000 description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 230000009467 reduction Effects 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000161126A JP4078014B2 (ja) | 2000-05-26 | 2000-05-26 | 不揮発性半導体記憶装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI273697B true TWI273697B (en) | 2007-02-11 |
Family
ID=18665199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090105339A TWI273697B (en) | 2000-05-26 | 2001-03-07 | Nonvolatile semiconductor memory device and process for producing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6759706B2 (enExample) |
| JP (1) | JP4078014B2 (enExample) |
| KR (1) | KR100742308B1 (enExample) |
| TW (1) | TWI273697B (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6901006B1 (en) * | 1999-07-14 | 2005-05-31 | Hitachi, Ltd. | Semiconductor integrated circuit device including first, second and third gates |
| KR100375220B1 (ko) * | 2000-10-12 | 2003-03-07 | 삼성전자주식회사 | 플래시 메모리 장치 형성방법 |
| DE10131237B8 (de) * | 2001-06-28 | 2006-08-10 | Infineon Technologies Ag | Feldeffekttransistor und Verfahren zu seiner Herstellung |
| CN100334732C (zh) * | 2001-11-30 | 2007-08-29 | 株式会社瑞萨科技 | 半导体集成电路器件及其制造方法 |
| JP2003168749A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 不揮発性半導体記憶装置及びその製造方法 |
| KR100400255B1 (ko) * | 2001-12-20 | 2003-10-01 | 주식회사 하이닉스반도체 | 복합 반도체 소자의 게이트 형성 방법법 |
| US6841446B2 (en) * | 2002-01-09 | 2005-01-11 | Macronix International Co., Ltd. | Fabrication method for a flash memory device |
| CN1302539C (zh) * | 2002-01-24 | 2007-02-28 | 旺宏电子股份有限公司 | 闪存的制造方法 |
| US6828183B1 (en) * | 2002-04-11 | 2004-12-07 | Taiwan Semiconductor Manufacturing Company | Process for high voltage oxide and select gate poly for split-gate flash memory |
| US7189606B2 (en) * | 2002-06-05 | 2007-03-13 | Micron Technology, Inc. | Method of forming fully-depleted (FD) SOI MOSFET access transistor |
| US7241662B2 (en) * | 2002-06-24 | 2007-07-10 | Micron Technology, Inc. | Reduction of field edge thinning in peripheral devices |
| KR100873813B1 (ko) * | 2002-06-29 | 2008-12-11 | 매그나칩 반도체 유한회사 | 로직부가 격리되는 고전압 트랜지스터 |
| CN1695204A (zh) * | 2002-10-22 | 2005-11-09 | 泰拉半导体株式会社 | 闪速电可擦除只读存储器单元以及包含该单元的存储器阵列结构 |
| US20040129986A1 (en) * | 2002-11-28 | 2004-07-08 | Renesas Technology Corp. | Nonvolatile semiconductor memory device and manufacturing method thereof |
| KR100504691B1 (ko) * | 2003-01-10 | 2005-08-03 | 삼성전자주식회사 | 전하저장절연막을 가지는 비휘발성 메모리 소자 및 그제조방법 |
| US7648881B2 (en) * | 2003-01-10 | 2010-01-19 | Samsung Electronics Co., Ltd. | Non-volatile memory devices with charge storage insulators and methods of fabricating such devices |
| KR100518577B1 (ko) * | 2003-05-26 | 2005-10-04 | 삼성전자주식회사 | 원 타임 프로그래머블 메모리 소자 및 이를 포함하는반도체 집적회로와 그 제조방법 |
| KR100557995B1 (ko) | 2003-07-30 | 2006-03-06 | 삼성전자주식회사 | 부유트랩형 비휘발성 메모리 셀을 갖는 반도체 장치 및그의 제조방법 |
| WO2005024381A2 (en) * | 2003-09-05 | 2005-03-17 | Griffin Analytical Technologies, Inc. | Analysis methods, analysis device waveform generation methods, analysis devices, and articles of manufacture |
| US7037786B2 (en) * | 2003-11-18 | 2006-05-02 | Atmel Corporation | Method of forming a low voltage gate oxide layer and tunnel oxide layer in an EEPROM cell |
| KR100505714B1 (ko) * | 2003-11-26 | 2005-08-03 | 삼성전자주식회사 | 스플릿 게이트형 플래쉬 메모리 장치의 제조 방법 |
| KR100998968B1 (ko) | 2003-12-05 | 2010-12-09 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자의 제조 방법 |
| KR100691943B1 (ko) * | 2003-12-11 | 2007-03-09 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US20050189608A1 (en) * | 2004-02-26 | 2005-09-01 | Erh-Kun Lai | [shallow trench isolation and method of forming the same] |
| KR100538884B1 (ko) * | 2004-03-30 | 2005-12-23 | 주식회사 하이닉스반도체 | 플래쉬 메모리소자의 제조방법 |
| DE112005001385T5 (de) * | 2004-06-15 | 2007-05-10 | Griffin analytical Technologies Inc., West Lafayette | Analyseinstrumente, -baugruppen und -verfahren |
| KR100626378B1 (ko) * | 2004-06-25 | 2006-09-20 | 삼성전자주식회사 | 반도체 장치의 배선 구조체 및 그 형성 방법 |
| US7227201B2 (en) * | 2004-08-27 | 2007-06-05 | Texas Instruments Incorporated | CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers |
| JP4551795B2 (ja) * | 2005-03-15 | 2010-09-29 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置の製造方法 |
| US8680461B2 (en) | 2005-04-25 | 2014-03-25 | Griffin Analytical Technologies, L.L.C. | Analytical instrumentation, apparatuses, and methods |
| KR100632655B1 (ko) * | 2005-05-11 | 2006-10-12 | 주식회사 하이닉스반도체 | 플래쉬 메모리소자 및 이의 제조방법 |
| JP2006319294A (ja) * | 2005-05-11 | 2006-11-24 | Hynix Semiconductor Inc | 半導体素子の高電圧用ゲート酸化膜形成方法及び半導体素子の高電圧用トランジスタ |
| KR100655435B1 (ko) * | 2005-08-04 | 2006-12-08 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
| TWI277180B (en) * | 2005-12-14 | 2007-03-21 | Fujitsu Ltd | Semiconductor device and the manufacturing method thereof |
| JP5013050B2 (ja) * | 2006-06-14 | 2012-08-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR100812237B1 (ko) * | 2006-08-25 | 2008-03-10 | 삼성전자주식회사 | 임베디드 플래시 메모리 장치의 제조 방법 |
| US7518912B2 (en) * | 2006-08-25 | 2009-04-14 | Powerchip Semiconductor Corp. | Multi-level non-volatile memory |
| US7556999B2 (en) * | 2006-09-12 | 2009-07-07 | Macronix International Co., Ltd. | Method for fabricating non-volatile memory |
| US7992424B1 (en) | 2006-09-14 | 2011-08-09 | Griffin Analytical Technologies, L.L.C. | Analytical instrumentation and sample analysis methods |
| KR100822806B1 (ko) * | 2006-10-20 | 2008-04-18 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 형성 방법 |
| US7955960B2 (en) * | 2007-03-22 | 2011-06-07 | Hynix Semiconductor Inc. | Nonvolatile memory device and method of fabricating the same |
| US7439134B1 (en) * | 2007-04-20 | 2008-10-21 | Freescale Semiconductor, Inc. | Method for process integration of non-volatile memory cell transistors with transistors of another type |
| JP5052580B2 (ja) * | 2009-09-30 | 2012-10-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP5778900B2 (ja) * | 2010-08-20 | 2015-09-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5951213B2 (ja) * | 2011-10-11 | 2016-07-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法及び半導体装置 |
| CN103137455B (zh) * | 2011-11-29 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 拥有低压逻辑器件和高压器件的芯片制造方法 |
| US9245898B2 (en) * | 2014-06-30 | 2016-01-26 | Sandisk Technologies Inc. | NAND flash memory integrated circuits and processes with controlled gate height |
| CN106129059A (zh) * | 2016-07-27 | 2016-11-16 | 深圳市航顺芯片技术研发有限公司 | 一种基于cmos深亚微米工艺的eeprom结构 |
| US10608090B2 (en) * | 2017-10-04 | 2020-03-31 | Silicon Storage Technology, Inc. | Method of manufacturing a split-gate flash memory cell with erase gate |
| CN112133672B (zh) * | 2019-06-24 | 2024-04-12 | 华邦电子股份有限公司 | 闪存装置及其制造方法 |
| CN114050159B (zh) * | 2021-11-12 | 2024-11-19 | 武汉新芯集成电路股份有限公司 | 存储器件及其制作方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6433935A (en) * | 1987-07-29 | 1989-02-03 | Seiko Instr & Electronics | Formation of silicon oxide film |
| EP0597124B1 (en) * | 1992-05-29 | 1998-12-09 | Citizen Watch Co. Ltd. | Method of fabricating a semiconductor nonvolatile storage device |
| JPH07283322A (ja) * | 1994-04-12 | 1995-10-27 | Toshiba Corp | 複合型半導体素子及びその製造方法 |
| DE69528971D1 (de) * | 1995-06-30 | 2003-01-09 | St Microelectronics Srl | Herstellungsverfahren eines Schaltkreises, der nichtflüchtige Speicherzellen und Randtransistoren von mindestens zwei unterschiedlichen Typen enthält, und entsprechender IC |
| JP4149013B2 (ja) | 1996-12-26 | 2008-09-10 | 株式会社ルネサステクノロジ | 半導体装置 |
| JPH10313106A (ja) * | 1997-05-14 | 1998-11-24 | Matsushita Electron Corp | 半導体装置の製造方法 |
| US6327182B1 (en) * | 1998-06-22 | 2001-12-04 | Motorola Inc. | Semiconductor device and a method of operation the same |
| EP1005079B1 (en) * | 1998-11-26 | 2012-12-26 | STMicroelectronics Srl | Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry |
| JP3314807B2 (ja) * | 1998-11-26 | 2002-08-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6259133B1 (en) * | 1999-02-11 | 2001-07-10 | Advanced Micro Devices, Inc. | Method for forming an integrated circuit memory cell and product thereof |
| US6143608A (en) * | 1999-03-31 | 2000-11-07 | Advanced Micro Devices, Inc. | Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation |
| EP1104022A1 (en) * | 1999-11-29 | 2001-05-30 | STMicroelectronics S.r.l. | Process for the fabrication of an integrated circuit comprising low and high voltage MOS transistors and EPROM cells |
| US6396108B1 (en) * | 2000-11-13 | 2002-05-28 | Advanced Micro Devices, Inc. | Self-aligned double gate silicon-on-insulator (SOI) device |
-
2000
- 2000-05-26 JP JP2000161126A patent/JP4078014B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-07 TW TW090105339A patent/TWI273697B/zh not_active IP Right Cessation
- 2001-03-14 KR KR1020010013228A patent/KR100742308B1/ko not_active Expired - Fee Related
- 2001-03-20 US US09/811,444 patent/US6759706B2/en not_active Expired - Fee Related
-
2003
- 2003-10-15 US US10/684,379 patent/US7132330B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20040169250A1 (en) | 2004-09-02 |
| US20010045590A1 (en) | 2001-11-29 |
| US6759706B2 (en) | 2004-07-06 |
| KR100742308B1 (ko) | 2007-07-25 |
| JP4078014B2 (ja) | 2008-04-23 |
| KR20010107537A (ko) | 2001-12-07 |
| JP2001338996A (ja) | 2001-12-07 |
| US7132330B2 (en) | 2006-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI273697B (en) | Nonvolatile semiconductor memory device and process for producing the same | |
| US7663179B2 (en) | Semiconductor device with rewritable nonvolatile memory cell | |
| TW463381B (en) | New split gate flash cell with extremely small cell size | |
| TW525170B (en) | Nonvolatile semiconductor memory device and its fabricating method | |
| US6259131B1 (en) | Poly tip and self aligned source for split-gate flash cell | |
| US20110076834A1 (en) | Semiconductor device and method for semiconductor device | |
| US20060228860A1 (en) | Semiconductor device and a method of manufacturing the same | |
| TWI390713B (zh) | 非揮發性半導體記憶裝置及其製造方法 | |
| TWI297932B (en) | Method for fabricating semiconductor device | |
| US5950087A (en) | Method to make self-aligned source etching available in split-gate flash | |
| US20070004140A1 (en) | Method of manufacturing a non-volatile semiconductor memory device | |
| US7271065B2 (en) | Horizontal memory devices with vertical gates | |
| CN101114617B (zh) | 闪存及其制造方法 | |
| TW456028B (en) | Semiconductor device and process for manufacturing semiconductor device | |
| US8669161B2 (en) | Fabricating method of mirror bit memory device having split ONO film with top oxide film formed by oxidation process | |
| TWI289912B (en) | Method of manufacturing a non-volatile memory device | |
| TW479284B (en) | Single tunnel gate oxidation process for fabricating nand flash memory | |
| US7358129B2 (en) | Nonvolatile semiconductor memory device and a method of the same | |
| US8436411B2 (en) | Non-volatile memory | |
| US20030157758A1 (en) | Non-volatile semiconductor memory device and manufacturing method therefor | |
| US20040063284A1 (en) | Scalable dielectric | |
| JP2004103902A (ja) | 不揮発性半導体メモリ装置、および、その製造方法 | |
| KR20030056666A (ko) | 적층형 게이트 플래시 메모리 셀 제조 방법 | |
| US6614071B1 (en) | Non-volatile semiconductor memory device | |
| US20110084327A1 (en) | 3-d electrically programmable and erasable single-transistor non-volatile semiconductor memory device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |