KR100727418B1 - 드라이 세정방법 - Google Patents

드라이 세정방법 Download PDF

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Publication number
KR100727418B1
KR100727418B1 KR1020010013165A KR20010013165A KR100727418B1 KR 100727418 B1 KR100727418 B1 KR 100727418B1 KR 1020010013165 A KR1020010013165 A KR 1020010013165A KR 20010013165 A KR20010013165 A KR 20010013165A KR 100727418 B1 KR100727418 B1 KR 100727418B1
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KR
South Korea
Prior art keywords
wafer
pad
delete delete
cleaning
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010013165A
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English (en)
Korean (ko)
Other versions
KR20020061452A (ko
Inventor
요코가와켄에츠
모모노이요시노리
이자와마사루
타치신이치
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication date
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Publication of KR20020061452A publication Critical patent/KR20020061452A/ko
Application granted granted Critical
Publication of KR100727418B1 publication Critical patent/KR100727418B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/36—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis orthogonal to the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
KR1020010013165A 2001-01-16 2001-03-14 드라이 세정방법 Expired - Fee Related KR100727418B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001007156A JP3925088B2 (ja) 2001-01-16 2001-01-16 ドライ洗浄方法
JP2001-007156 2001-01-16

Publications (2)

Publication Number Publication Date
KR20020061452A KR20020061452A (ko) 2002-07-24
KR100727418B1 true KR100727418B1 (ko) 2007-06-13

Family

ID=18874940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010013165A Expired - Fee Related KR100727418B1 (ko) 2001-01-16 2001-03-14 드라이 세정방법

Country Status (4)

Country Link
US (1) US6629538B2 (enExample)
JP (1) JP3925088B2 (enExample)
KR (1) KR100727418B1 (enExample)
TW (1) TW512404B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140089383A (ko) * 2011-11-08 2014-07-14 어플라이드 머티어리얼스, 인코포레이티드 수증기 처리를 이용하여 기판으로부터 재료 층을 제거하는 방법들

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020124867A1 (en) * 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
US7111629B2 (en) * 2001-01-08 2006-09-26 Apl Co., Ltd. Method for cleaning substrate surface
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
CH696188A5 (de) 2002-07-29 2007-02-15 Brooks Pri Automation Switzerl Detektions- und Reinigungsvorrichtung in einer Handhabungsvorrichtung für Photomasken.
AU2003268158A1 (en) * 2002-09-19 2004-04-08 Tokyo Electron Limited Viewing window cleaning apparatus
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
JP2004349583A (ja) * 2003-05-23 2004-12-09 Sharp Corp トランジスタの製造方法
US20050279453A1 (en) 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
JP4727170B2 (ja) * 2004-06-23 2011-07-20 東京エレクトロン株式会社 プラズマ処理方法、および後処理方法
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
JP4860295B2 (ja) * 2005-03-02 2012-01-25 エア・ウォーター株式会社 プラズマ処理方法
KR20060131280A (ko) * 2005-06-15 2006-12-20 주식회사 하이닉스반도체 반도체 소자의 폴리실리콘막 세정 방법
CN100399513C (zh) * 2005-12-02 2008-07-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种减少干法清洗工艺对刻蚀均匀性影响的方法
JP4159584B2 (ja) * 2006-06-20 2008-10-01 エルピーダメモリ株式会社 半導体装置の製造方法
JP2008187203A (ja) * 2008-04-25 2008-08-14 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5103356B2 (ja) * 2008-10-31 2012-12-19 東京エレクトロン株式会社 基板洗浄ブラシ及び基板処理装置並びに基板洗浄方法
JP6145334B2 (ja) * 2013-06-28 2017-06-07 株式会社荏原製作所 基板処理装置
CN107282547A (zh) * 2016-03-30 2017-10-24 东莞新科技术研究开发有限公司 电子元件的清洗方法
CN106269756B (zh) * 2016-08-10 2018-09-25 京东方科技集团股份有限公司 毛刷与玻璃基板之间压力检测方法、装置和玻璃清洗设备
CN106345719B (zh) * 2016-10-28 2019-01-18 贵州顺安机电设备有限公司 一种炭块清理设备
WO2019240930A1 (en) * 2018-06-11 2019-12-19 Mattson Technology, Inc. Generation of hydrogen reactive species for processing of workpieces
CN109494147B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体的碳化硅氧化方法
CN112122191A (zh) * 2020-09-28 2020-12-25 杭州能发科技有限公司 一种具有自我清理功能的巡检机器人探头
CN114335256B (zh) * 2022-03-10 2022-05-20 北京通美晶体技术股份有限公司 一种干法清洗锗晶片的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224787A (ja) * 1993-01-28 1994-08-12 Seikosha Co Ltd フィルタ回路
JPH0885887A (ja) * 1994-09-20 1996-04-02 Hitachi Ltd エッチング後処理方法
JPH1012581A (ja) * 1996-06-26 1998-01-16 Yokogawa Electric Corp 微小異物除去装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3563462B2 (ja) 1994-11-15 2004-09-08 松下エコシステムズ株式会社 活性空気による乾式洗浄方法とその装置、および除電方法
JPH0917776A (ja) 1995-06-27 1997-01-17 Sony Corp 半導体装置の製造方法及び半導体製造装置
US5624501A (en) * 1995-09-26 1997-04-29 Gill, Jr.; Gerald L. Apparatus for cleaning semiconductor wafers
JP3267174B2 (ja) 1996-03-29 2002-03-18 株式会社日立製作所 プラズマ処理装置
US6269510B1 (en) * 1999-01-04 2001-08-07 International Business Machines Corporation Post CMP clean brush with torque monitor
JP2002217156A (ja) * 2001-01-16 2002-08-02 Hitachi Ltd ドライ洗浄装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224787A (ja) * 1993-01-28 1994-08-12 Seikosha Co Ltd フィルタ回路
JPH0885887A (ja) * 1994-09-20 1996-04-02 Hitachi Ltd エッチング後処理方法
JPH1012581A (ja) * 1996-06-26 1998-01-16 Yokogawa Electric Corp 微小異物除去装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140089383A (ko) * 2011-11-08 2014-07-14 어플라이드 머티어리얼스, 인코포레이티드 수증기 처리를 이용하여 기판으로부터 재료 층을 제거하는 방법들
KR102033707B1 (ko) 2011-11-08 2019-10-17 어플라이드 머티어리얼스, 인코포레이티드 수증기 처리를 이용하여 기판으로부터 재료 층을 제거하는 방법들

Also Published As

Publication number Publication date
US20020092541A1 (en) 2002-07-18
JP2002217154A (ja) 2002-08-02
KR20020061452A (ko) 2002-07-24
JP3925088B2 (ja) 2007-06-06
US6629538B2 (en) 2003-10-07
TW512404B (en) 2002-12-01

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