JP4159584B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4159584B2 JP4159584B2 JP2006170376A JP2006170376A JP4159584B2 JP 4159584 B2 JP4159584 B2 JP 4159584B2 JP 2006170376 A JP2006170376 A JP 2006170376A JP 2006170376 A JP2006170376 A JP 2006170376A JP 4159584 B2 JP4159584 B2 JP 4159584B2
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- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 235000012431 wafers Nutrition 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 60
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 55
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 55
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 47
- 229920005591 polysilicon Polymers 0.000 claims description 47
- 238000005108 dry cleaning Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000001020 plasma etching Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 230000005284 excitation Effects 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000047 product Substances 0.000 description 17
- 239000007795 chemical reaction product Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- GGMAUXPWPYFQRB-UHFFFAOYSA-N 1,1,2,2,3,3,4,4-octafluorocyclopentane Chemical compound FC1(F)CC(F)(F)C(F)(F)C1(F)F GGMAUXPWPYFQRB-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Description
シリコン膜と前記第1の膜とのエッチ選択比が所定値以上となるプラズマエッチング条件を選択し、チャンバー内をドライクリーニングする工程と、
所定のプラズマエッチング条件を選択し、前記ウエハ上の第1の膜およびシリコン膜を順次に異方性エッチングする工程と、
前記異方性エッチング後のウエハをチャンバーから取り出す工程と、
を順次に有する処理を、ウエハ毎に繰り返すことを特徴とする。
前記ゲート酸化膜上にポリシリコン膜、金属膜、絶縁膜を順次に形成する工程と、
前記絶縁膜、金属膜およびポリシリコン膜の一部を所定のパターンに異方性エッチングする工程と、
前記ウエハ上の全面にシリコン窒化膜を形成する工程と、
前記シリコン窒化膜が形成されたウエハを、プラズマエッチング装置のチャンバー内に設けられた電極に搭載する工程と、
前記チャンバー内をドライクリーニングする工程と、
前記ドライクリーニングした後、前記チャンバー内で、前記シリコン窒化膜を異方性エッチングする工程と、
記シリコン窒化膜を異方性エッチングした後、前記チャンバー内で、前記ポリシリコン膜を異方性エッチングする工程と、
前記ポリシリコン膜が異方性エッチングされたウエハをチャンバーから取り出す工程と、
を少なくとも含み、且つ上記の順に処理することを特徴とする。
処理を行なえばp型半導体を得ることができる。
一般にバイアス電力を下げるほど、エッチ選択比(ポリシリコン膜/シリコン窒化膜)は高くなる。また、高周波電力が低いほどその依存性は急激である。本条件でのエッチ選択比(ポリシリコン膜/シリコン窒化膜)のバイアス電力依存性を図3の実線に示した。目標であるエッチ選択比≧100は、バイアス電力≦5Wで達成される。
O2を増加しても、エッチ選択比は高くなる。O2の流量を3sccmから6sccmに増加したときのバイアス電力依存性を図3の点線に示す。この場合には、エッチ選択比≧100は、バイアス電力≦20Wで達成される。ここで、重要なのは、O2流量の絶対値ではなく、O2の流量のCl2の流量に対する比率(%)である。O2の流量が3sccmの場合には、流量比は3/270=1.1%、O2の流量が6sccmの場合には、流量比は6/270=2.2%となる。また、O2を一部N2に置換しても、(O2+N2)のトータル流量が変わらなければ、ほぼ同じ結果が得られる。
一般に、圧力およびプラズマ励起用電力が高いほど、エッチ選択比は高くなることが知られている。従って、目標性能のエッチ選択比である(ポリシリコン膜/シリコン窒化膜)≧100が達成される条件範囲を示すと、以下のようになる。つまり、O2/Cl2≧1.5%、圧力≧4.5mTorr、プラズマ励起用電力≧400W、0≦バイアス電力≦5Wである。ただしO2とN2の総流量を変えずに、O2を一部N2に置換してもよい。
が出来る。第三の効果は、電極から製品への重金属汚染を防ぐことが出来る点である。
11:ゲート酸化膜
12:ポリシリコン膜
13:WN膜
14:W膜
15:シリコン窒化膜
16:シリコン酸化膜
17:シリコン窒化膜
21:チャンバー
22:電極(下部電極)
23:コイル
24:高周波電源装置
25:高周波電源装置
Claims (9)
- プラズマエッチング装置のチャンバー内に設けられた電極上に、シリコン膜の表面を含むウエハ表面を第1の膜で覆ったウエハを搭載する工程と、
シリコン膜と前記第1の膜とのエッチ選択比が所定値以上となるプラズマエッチング条件を選択し、チャンバー内をドライクリーニングする工程と、
所定のプラズマエッチング条件を選択し、前記ウエハ上の第1の膜およびシリコン膜を順次に異方性エッチングする工程と、
前記異方性エッチング後にウエハをチャンバーから取り出す工程と、
を順次に有する処理を、ウエハ1枚毎に繰り返すことを特徴とする半導体装置の製造方法。 - 前記第1の膜がシリコン窒化膜であることを特徴とする、請求項1に記載の半導体装置の製造方法。
- ウエハ表面にゲート酸化膜を形成する第1の工程と、
前記ゲート酸化膜上にポリシリコン膜、金属膜、絶縁膜を順次に形成する第2の工程と、
前記絶縁膜、金属膜およびポリシリコン膜の一部を所定のパターンに異方性エッチングする第3の工程と、
前記ウエハ上の全面にシリコン窒化膜を形成する第4の工程と、
前記シリコン窒化膜が形成されたウエハを、プラズマエッチング装置のチャンバー内に設けられた電極に搭載する第5の工程と、
前記チャンバー内をドライクリーニングする第6の工程と、
前記ドライクリーニングした後、前記チャンバー内で、前記シリコン窒化膜を異方性エッチングする第7の工程と、
前記シリコン窒化膜を異方性エッチングした後、前記チャンバー内で、前記ポリシリコン膜を異方性エッチングする第8の工程と、
前記ポリシリコン膜が異方性エッチングされたウエハをチャンバーから取り出す第9の工程と、を少なくとも含み、
前記第5〜第9の工程をウエハ1枚毎に繰り返して行うことを特徴とする半導体装置の製造方法。 - 前記第5〜第9の工程を、1ロットを構成する複数のウエハ1枚毎に順次、繰り返し行うことを特徴とする、請求項3に記載の半導体装置の製造方法。
- 前記金属膜は、純金属膜、金属窒化膜、及び、金属シリサイド膜の少なくとも1つを含むことを特徴とする、請求項3又は4に記載の半導体装置の製造方法。
- 前記絶縁膜は、シリコン酸化膜、及び、シリコン窒化膜の少なくとも1つを含むことを特徴とする、請求項3又は4に記載の半導体装置の製造方法。
- 前記ドライクリーニングする工程は、前記チャンバーに付属するコイルにプラズマ励起用電力を印加し、前記電極にバイアス電力を印加して、前記シリコン窒化膜とシリコン膜のエッチ選択比が100以上の条件で行うことを特徴とする、請求項2〜6の何れか一に記載の半導体装置の製造方法。
- 前記ドライクリーニングする工程は、前記プラズマ励起用電力が400W以上、前記バイアス電力が0以上で5W以下、チャンバー内の圧力が4.5mTorr以上、チャンバー内に供給するO2ガスの流量、又は、O2ガスおよびN2ガスの流量の和と、Cl2ガスの流量との比が1.5%以上である条件で行うことを特徴とする、請求項7に記載の半導体装置の製造方法。
- 前記ドライクリーニングする工程は、前記シリコン窒化膜を1nm以下のエッチング量でエッチングする条件で行う、請求項1〜8の何れか一に記載の半導体装置の製造方法。
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US7897948B2 (en) | 2006-09-06 | 2011-03-01 | Koninklijke Philips Electronics N.V. | EUV plasma discharge lamp with conveyor belt electrodes |
KR20130116099A (ko) * | 2012-04-13 | 2013-10-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
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US5431772A (en) * | 1991-05-09 | 1995-07-11 | International Business Machines Corporation | Selective silicon nitride plasma etching process |
JPH0964017A (ja) | 1995-08-29 | 1997-03-07 | Toshiba Corp | 半導体製造装置および半導体装置の製造方法 |
JP3568749B2 (ja) * | 1996-12-17 | 2004-09-22 | 株式会社デンソー | 半導体のドライエッチング方法 |
US5869401A (en) * | 1996-12-20 | 1999-02-09 | Lam Research Corporation | Plasma-enhanced flash process |
US6003526A (en) * | 1997-09-12 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd | In-sit chamber cleaning method |
US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6872322B1 (en) * | 1997-11-12 | 2005-03-29 | Applied Materials, Inc. | Multiple stage process for cleaning process chambers |
JP3925088B2 (ja) * | 2001-01-16 | 2007-06-06 | 株式会社日立製作所 | ドライ洗浄方法 |
US6545245B2 (en) * | 2001-05-02 | 2003-04-08 | United Microelectronics Corp. | Method for dry cleaning metal etching chamber |
US20030141820A1 (en) * | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
JP3997859B2 (ja) * | 2002-07-25 | 2007-10-24 | 株式会社日立製作所 | 半導体装置の製造方法および製造装置 |
JP4131813B2 (ja) * | 2002-10-24 | 2008-08-13 | 株式会社半導体エネルギー研究所 | プラズマエッチング方法及び半導体装置の作製方法 |
US20040110388A1 (en) * | 2002-12-06 | 2004-06-10 | International Business Machines Corporation | Apparatus and method for shielding a wafer from charged particles during plasma etching |
JP2004247675A (ja) * | 2003-02-17 | 2004-09-02 | Renesas Technology Corp | 半導体装置の製造方法 |
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