JP3925088B2 - ドライ洗浄方法 - Google Patents

ドライ洗浄方法 Download PDF

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Publication number
JP3925088B2
JP3925088B2 JP2001007156A JP2001007156A JP3925088B2 JP 3925088 B2 JP3925088 B2 JP 3925088B2 JP 2001007156 A JP2001007156 A JP 2001007156A JP 2001007156 A JP2001007156 A JP 2001007156A JP 3925088 B2 JP3925088 B2 JP 3925088B2
Authority
JP
Japan
Prior art keywords
wafer
processed
pad
cleaning
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001007156A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002217154A (ja
JP2002217154A5 (enExample
Inventor
賢悦 横川
義典 桃井
勝 伊澤
新一 田地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001007156A priority Critical patent/JP3925088B2/ja
Priority to TW090105793A priority patent/TW512404B/zh
Priority to KR1020010013165A priority patent/KR100727418B1/ko
Priority to US09/811,652 priority patent/US6629538B2/en
Publication of JP2002217154A publication Critical patent/JP2002217154A/ja
Publication of JP2002217154A5 publication Critical patent/JP2002217154A5/ja
Application granted granted Critical
Publication of JP3925088B2 publication Critical patent/JP3925088B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/36—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis orthogonal to the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
JP2001007156A 2001-01-16 2001-01-16 ドライ洗浄方法 Expired - Fee Related JP3925088B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001007156A JP3925088B2 (ja) 2001-01-16 2001-01-16 ドライ洗浄方法
TW090105793A TW512404B (en) 2001-01-16 2001-03-13 Dry cleaning method
KR1020010013165A KR100727418B1 (ko) 2001-01-16 2001-03-14 드라이 세정방법
US09/811,652 US6629538B2 (en) 2001-01-16 2001-03-20 Method for cleaning semiconductor wafers in a vacuum environment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001007156A JP3925088B2 (ja) 2001-01-16 2001-01-16 ドライ洗浄方法

Publications (3)

Publication Number Publication Date
JP2002217154A JP2002217154A (ja) 2002-08-02
JP2002217154A5 JP2002217154A5 (enExample) 2005-02-17
JP3925088B2 true JP3925088B2 (ja) 2007-06-06

Family

ID=18874940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001007156A Expired - Fee Related JP3925088B2 (ja) 2001-01-16 2001-01-16 ドライ洗浄方法

Country Status (4)

Country Link
US (1) US6629538B2 (enExample)
JP (1) JP3925088B2 (enExample)
KR (1) KR100727418B1 (enExample)
TW (1) TW512404B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020124867A1 (en) * 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
US7111629B2 (en) * 2001-01-08 2006-09-26 Apl Co., Ltd. Method for cleaning substrate surface
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
CH696188A5 (de) 2002-07-29 2007-02-15 Brooks Pri Automation Switzerl Detektions- und Reinigungsvorrichtung in einer Handhabungsvorrichtung für Photomasken.
AU2003268158A1 (en) * 2002-09-19 2004-04-08 Tokyo Electron Limited Viewing window cleaning apparatus
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
JP2004349583A (ja) * 2003-05-23 2004-12-09 Sharp Corp トランジスタの製造方法
US20050279453A1 (en) 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
JP4727170B2 (ja) * 2004-06-23 2011-07-20 東京エレクトロン株式会社 プラズマ処理方法、および後処理方法
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
JP4860295B2 (ja) * 2005-03-02 2012-01-25 エア・ウォーター株式会社 プラズマ処理方法
KR20060131280A (ko) * 2005-06-15 2006-12-20 주식회사 하이닉스반도체 반도체 소자의 폴리실리콘막 세정 방법
CN100399513C (zh) * 2005-12-02 2008-07-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种减少干法清洗工艺对刻蚀均匀性影响的方法
JP4159584B2 (ja) * 2006-06-20 2008-10-01 エルピーダメモリ株式会社 半導体装置の製造方法
JP2008187203A (ja) * 2008-04-25 2008-08-14 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5103356B2 (ja) * 2008-10-31 2012-12-19 東京エレクトロン株式会社 基板洗浄ブラシ及び基板処理装置並びに基板洗浄方法
US9653327B2 (en) * 2011-05-12 2017-05-16 Applied Materials, Inc. Methods of removing a material layer from a substrate using water vapor treatment
JP6145334B2 (ja) * 2013-06-28 2017-06-07 株式会社荏原製作所 基板処理装置
CN107282547A (zh) * 2016-03-30 2017-10-24 东莞新科技术研究开发有限公司 电子元件的清洗方法
CN106269756B (zh) * 2016-08-10 2018-09-25 京东方科技集团股份有限公司 毛刷与玻璃基板之间压力检测方法、装置和玻璃清洗设备
CN106345719B (zh) * 2016-10-28 2019-01-18 贵州顺安机电设备有限公司 一种炭块清理设备
WO2019240930A1 (en) * 2018-06-11 2019-12-19 Mattson Technology, Inc. Generation of hydrogen reactive species for processing of workpieces
CN109494147B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体的碳化硅氧化方法
CN112122191A (zh) * 2020-09-28 2020-12-25 杭州能发科技有限公司 一种具有自我清理功能的巡检机器人探头
CN114335256B (zh) * 2022-03-10 2022-05-20 北京通美晶体技术股份有限公司 一种干法清洗锗晶片的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3234997B2 (ja) * 1993-01-28 2001-12-04 セイコークロック株式会社 フィルタ回路
JP3348804B2 (ja) * 1994-09-20 2002-11-20 株式会社日立製作所 エッチング後処理方法
JP3563462B2 (ja) 1994-11-15 2004-09-08 松下エコシステムズ株式会社 活性空気による乾式洗浄方法とその装置、および除電方法
JPH0917776A (ja) 1995-06-27 1997-01-17 Sony Corp 半導体装置の製造方法及び半導体製造装置
US5624501A (en) * 1995-09-26 1997-04-29 Gill, Jr.; Gerald L. Apparatus for cleaning semiconductor wafers
JP3267174B2 (ja) 1996-03-29 2002-03-18 株式会社日立製作所 プラズマ処理装置
JP3169169B2 (ja) * 1996-06-26 2001-05-21 横河電機株式会社 微小異物除去装置
US6269510B1 (en) * 1999-01-04 2001-08-07 International Business Machines Corporation Post CMP clean brush with torque monitor
JP2002217156A (ja) * 2001-01-16 2002-08-02 Hitachi Ltd ドライ洗浄装置

Also Published As

Publication number Publication date
US20020092541A1 (en) 2002-07-18
KR100727418B1 (ko) 2007-06-13
JP2002217154A (ja) 2002-08-02
KR20020061452A (ko) 2002-07-24
US6629538B2 (en) 2003-10-07
TW512404B (en) 2002-12-01

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