KR100706922B1 - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR100706922B1
KR100706922B1 KR1020060040022A KR20060040022A KR100706922B1 KR 100706922 B1 KR100706922 B1 KR 100706922B1 KR 1020060040022 A KR1020060040022 A KR 1020060040022A KR 20060040022 A KR20060040022 A KR 20060040022A KR 100706922 B1 KR100706922 B1 KR 100706922B1
Authority
KR
South Korea
Prior art keywords
liquid
substrate
substrate table
gap
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060040022A
Other languages
English (en)
Korean (ko)
Other versions
KR20060115612A (ko
Inventor
봅 스트리프케르크
쇼에르트 니콜라스 람베르투스 돈더스
로엘로프 프레데릭 데 그라프
크리스티안 알렉산더 후겐담
마르티누스 헨드리쿠스 안토니우스 렌더스
예뢴 요한네스 소피아 마리아 메르텐스
미첼 리펜
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20060115612A publication Critical patent/KR20060115612A/ko
Application granted granted Critical
Publication of KR100706922B1 publication Critical patent/KR100706922B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020060040022A 2005-05-03 2006-05-03 리소그래피 장치 및 디바이스 제조 방법 Expired - Fee Related KR100706922B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/120,176 US7433016B2 (en) 2005-05-03 2005-05-03 Lithographic apparatus and device manufacturing method
US11/120,176 2005-05-03

Publications (2)

Publication Number Publication Date
KR20060115612A KR20060115612A (ko) 2006-11-09
KR100706922B1 true KR100706922B1 (ko) 2007-04-13

Family

ID=36716876

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060040022A Expired - Fee Related KR100706922B1 (ko) 2005-05-03 2006-05-03 리소그래피 장치 및 디바이스 제조 방법

Country Status (7)

Country Link
US (10) US7433016B2 (https=)
EP (4) EP1720074B1 (https=)
JP (3) JP4077849B2 (https=)
KR (1) KR100706922B1 (https=)
CN (3) CN101794083B (https=)
SG (1) SG126920A1 (https=)
TW (2) TWI326004B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2864823B1 (fr) 2004-01-05 2006-08-18 Oreal Tete de distribution verrouillable
JP5162254B2 (ja) * 2005-02-10 2013-03-13 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィシステム及びデバイス製造方法
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7837762B2 (en) * 2005-05-17 2010-11-23 Freescale Semiconductor, Inc. Method of distancing a bubble and bubble displacement apparatus
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4923480B2 (ja) * 2005-08-23 2012-04-25 株式会社ニコン 露光装置及びデバイス製造方法、計測部材
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
NL2002983A1 (nl) * 2008-06-26 2009-12-29 Asml Netherlands Bv A lithographic apparatus and a method of operating the lithographic apparatus.
JP2010118527A (ja) * 2008-11-13 2010-05-27 Canon Inc 露光装置、およびデバイス製造方法
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
SG188036A1 (en) 2011-08-18 2013-03-28 Asml Netherlands Bv Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
NL2010477A (en) * 2012-05-22 2013-11-25 Asml Netherlands Bv Sensor, lithographic apparatus and device manufacturing method.
JP6006406B2 (ja) 2012-05-29 2016-10-12 エーエスエムエル ネザーランズ ビー．ブイ． オブジェクトホルダ及びリソグラフィ装置
CN104570618B (zh) * 2014-12-25 2016-08-17 浙江大学 基于亲疏水交替表面的浸没流场密封装置
CN104597720B (zh) * 2015-01-15 2016-08-17 浙江大学 一种用于浸没式光刻机的气液隔离装置
CN113189849B (zh) 2021-04-22 2023-08-11 中国科学院光电技术研究所 一种近场光刻浸没系统及其浸没单元和接口模组

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040044123A (ko) * 2002-11-12 2004-05-27 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20040098563A (ko) * 2003-05-13 2004-11-20 에이에스엠엘 네델란즈 비.브이. 리소그래피장치, 디바이스 제조방법
KR20040106242A (ko) * 2003-06-11 2004-12-17 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20050001433A (ko) * 2003-06-27 2005-01-06 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법

Family Cites Families (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE242880C (https=)
DE224448C (https=)
DE206607C (https=)
DE221563C (https=)
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US3647587A (en) * 1969-06-23 1972-03-07 Burlington Industries Inc Method of installing invisible seams
ATE1462T1 (de) 1979-07-27 1982-08-15 Werner W. Dr. Tabarelli Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (https=) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (https=) 1986-01-24 1987-08-01
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63157419U (https=) 1987-03-31 1988-10-14
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5195577A (en) 1989-10-26 1993-03-23 Mitsubishi Denki Kabushiki Kaisha Cooling device for power semiconductor switching elements
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
WO1998009278A1 (en) * 1996-08-26 1998-03-05 Digital Papyrus Technologies Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU1505699A (en) 1997-12-12 1999-07-05 Nikon Corporation Projection exposure method and projection aligner
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
GB0014946D0 (en) * 2000-06-20 2000-08-09 Cerestar Holding Bv Starch composition and the use thereof in the wet-end of paper preparation
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
TW567400B (en) 2000-11-23 2003-12-21 Asml Netherlands Bv Lithographic projection apparatus, integrated circuit device manufacturing method, and integrated circuit device manufactured by the manufacturing method
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
WO2003040830A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
SG106672A1 (en) 2002-03-08 2004-10-29 Asml Netherlands Bv Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
JP4669922B2 (ja) * 2002-03-14 2011-04-13 独立行政法人農業生物資源研究所 植物にストレス耐性を付与する新規ジテルペノイド化合物
US20040011780A1 (en) 2002-07-22 2004-01-22 Applied Materials, Inc. Method for achieving a desired process uniformity by modifying surface topography of substrate heater
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101470360B (zh) * 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
SG157962A1 (en) * 2002-12-10 2010-01-29 Nikon Corp Exposure apparatus and method for producing device
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
KR20050085236A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
WO2004053954A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
KR20050085026A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
CN100370533C (zh) 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 用于照射层的方法和用于将辐射导向层的装置
EP1584089B1 (en) 2002-12-19 2006-08-02 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
ATE365962T1 (de) 2002-12-19 2007-07-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
EP3352010A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
KR101289959B1 (ko) 2003-04-11 2013-07-26 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR20050122269A (ko) 2003-04-17 2005-12-28 가부시키가이샤 니콘 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7274472B2 (en) * 2003-05-28 2007-09-25 Timbre Technologies, Inc. Resolution enhanced optical metrology
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) * 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2843472B1 (en) 2003-07-08 2016-12-07 Nikon Corporation Wafer table for immersion lithography
JP4729876B2 (ja) * 2003-07-09 2011-07-20 株式会社ニコン 露光装置、露光方法、並びにデバイス製造方法
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4376718B2 (ja) * 2003-07-28 2009-12-02 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、デバイス製造方法、及び基板
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
KR20190002749A (ko) 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
EP1660925B1 (en) 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP4513299B2 (ja) 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
TW200514138A (en) * 2003-10-09 2005-04-16 Nippon Kogaku Kk Exposure equipment and exposure method, manufacture method of component
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
US7528929B2 (en) * 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) * 2003-12-09 2005-06-30 Canon Inc 露光装置
KR101281397B1 (ko) * 2003-12-15 2013-07-02 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP2005191381A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP2005191393A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
JP4018647B2 (ja) * 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP2005286068A (ja) * 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
JP4510494B2 (ja) * 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
CN103558737A (zh) 2004-06-09 2014-02-05 尼康股份有限公司 基板保持装置、具备其之曝光装置、方法
US7481867B2 (en) 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
US20060001851A1 (en) 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US8410031B2 (en) 2004-11-04 2013-04-02 Lanxess Elastomers B.V. Method for preparing an imidized polymer
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4641469B2 (ja) 2005-09-06 2011-03-02 キヤノン株式会社 画像形成装置、画像形成装置の制御方法、プログラム
JPWO2007083592A1 (ja) 2006-01-17 2009-06-11 株式会社ニコン 基板保持装置及び露光装置、並びにデバイス製造方法
US8027019B2 (en) 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266504A (ja) 2006-03-29 2007-10-11 Canon Inc 露光装置
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
KR20100102106A (ko) 2007-12-06 2010-09-20 신에쯔 한도타이 가부시키가이샤 기상성장용 서셉터 및 기상성장 장치
US20120196242A1 (en) 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US10242890B2 (en) 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
CN105917459A (zh) 2014-02-07 2016-08-31 应用材料公司 用于dsa上弯曲晶片的夹持能力

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040044123A (ko) * 2002-11-12 2004-05-27 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20040098563A (ko) * 2003-05-13 2004-11-20 에이에스엠엘 네델란즈 비.브이. 리소그래피장치, 디바이스 제조방법
KR20040106242A (ko) * 2003-06-11 2004-12-17 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20050001433A (ko) * 2003-06-27 2005-01-06 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
1020040044123
1020040098563
1020040106242
1020050001433

Also Published As

Publication number Publication date
US20060250590A1 (en) 2006-11-09
US9606449B2 (en) 2017-03-28
TWI410745B (zh) 2013-10-01
EP2339404A3 (en) 2011-08-10
TWI326004B (en) 2010-06-11
US9229335B2 (en) 2016-01-05
JP2006313910A (ja) 2006-11-16
EP2339404B1 (en) 2012-02-08
US20120127441A1 (en) 2012-05-24
EP2339403B1 (en) 2012-07-25
CN101794084A (zh) 2010-08-04
US20120013873A1 (en) 2012-01-19
US11016394B2 (en) 2021-05-25
TW201024916A (en) 2010-07-01
EP1720074A1 (en) 2006-11-08
CN101794084B (zh) 2013-03-27
US9081300B2 (en) 2015-07-14
SG126920A1 (en) 2006-11-29
US20160103399A1 (en) 2016-04-14
EP2339403A3 (en) 2011-08-24
US10353296B2 (en) 2019-07-16
EP2267539A1 (en) 2010-12-29
JP4820809B2 (ja) 2011-11-24
US9146478B2 (en) 2015-09-29
US20120013871A1 (en) 2012-01-19
US20170248854A1 (en) 2017-08-31
JP4077849B2 (ja) 2008-04-23
KR20060115612A (ko) 2006-11-09
TW200707090A (en) 2007-02-16
US10684554B2 (en) 2020-06-16
EP2339404A2 (en) 2011-06-29
US7433016B2 (en) 2008-10-07
US20080259295A1 (en) 2008-10-23
US20200310252A1 (en) 2020-10-01
CN1858656A (zh) 2006-11-08
EP1720074B1 (en) 2011-11-02
CN1858656B (zh) 2010-05-12
US8115903B2 (en) 2012-02-14
CN101794083B (zh) 2012-02-08
US20190339623A1 (en) 2019-11-07
US10025196B2 (en) 2018-07-17
US20180321594A1 (en) 2018-11-08
CN101794083A (zh) 2010-08-04
JP5235926B2 (ja) 2013-07-10
JP2010118713A (ja) 2010-05-27
JP2008085370A (ja) 2008-04-10
EP2339403A2 (en) 2011-06-29

Similar Documents

Publication Publication Date Title
US11016394B2 (en) Lithographic apparatus and device manufacturing method
KR100866583B1 (ko) 리소그래피 장치 및 디바이스 제조 방법
KR100767089B1 (ko) 리소그래피 장치 및 디바이스 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120323

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130329

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160328

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170324

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180323

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20190329

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 18

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250406

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250406

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250406