KR100659259B1 - 리소그래피 장치 및 디바이스 제조방법 - Google Patents
리소그래피 장치 및 디바이스 제조방법 Download PDFInfo
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- KR100659259B1 KR100659259B1 KR1020040067737A KR20040067737A KR100659259B1 KR 100659259 B1 KR100659259 B1 KR 100659259B1 KR 1020040067737 A KR1020040067737 A KR 1020040067737A KR 20040067737 A KR20040067737 A KR 20040067737A KR 100659259 B1 KR100659259 B1 KR 100659259B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/162—Protective or antiabrasion layer
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Description
Claims (32)
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- 리소그래피 투영장치에 있어서,패터닝디바이스로부터의 패턴을 투영시스템을 이용하여 기판 상으로 투영시키도록 배치되고, 상기 투영시스템의 최종 요소와 상기 기판 사이의 공간을 전체적으로 또는 부분적으로 침지액체로 채우는 액체공급시스템을 구비하며,상기 최종 요소는, 상기 침지액체와 접촉되는 표면 상에, 상기 침지액체 내에서 용해되지 않는 용융 실리카 플레이트를 가지는 것을 특징으로 하는 리소그래피 투영장치.
- 제5항에 있어서,상기 용융 실리카 플레이트의 두께는 50㎛ 내지 5mm의 범위 내에 있는 것을 특징으로 하는 리소그래피 투영장치.
- 제5항 또는 제6항에 있어서,상기 용융 실리카 플레이트는 글루없이 콘택 본딩에 의해 상기 최종 요소에 부착되는 것을 특징으로 하는 리소그래피 투영장치.
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- 제5항 또는 제6항에 있어서,상기 최종 요소는 CaF2로 이루어진 것을 특징으로 하는 리소그래피 투영장치.
- 제5항에 있어서,상기 최종 요소는 제1 및 제2구성요소로 이루어지고, 상기 구성요소 양자 모두는 CaF2이며, 상기 투영빔은 상기 제2구성요소를 통과하기 전에 상기 제1구성요소를 통과하는 것을 특징으로 하는 리소그래피 투영장치.
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- 제5항에 있어서,상기 리소그래피 투영장치에 상기 용융 실리카 플레이트와 상기 최종 요소 사이의 결합부의 주변 둘레에 액체 기밀 밀봉부가 제공되는 것을 특징으로 하는 리소그래피 투영장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03255377 | 2003-08-29 | ||
EP03255377.8 | 2003-08-29 |
Publications (2)
Publication Number | Publication Date |
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KR20050021872A KR20050021872A (ko) | 2005-03-07 |
KR100659259B1 true KR100659259B1 (ko) | 2006-12-19 |
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KR1020040067737A KR100659259B1 (ko) | 2003-08-29 | 2004-08-27 | 리소그래피 장치 및 디바이스 제조방법 |
Country Status (6)
Country | Link |
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US (6) | US8208124B2 (ko) |
EP (1) | EP2261740B1 (ko) |
JP (3) | JP4586032B2 (ko) |
KR (1) | KR100659259B1 (ko) |
SG (2) | SG173309A1 (ko) |
TW (1) | TWI254189B (ko) |
Families Citing this family (12)
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EP2261740B1 (en) * | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
TWI395069B (zh) * | 2004-02-18 | 2013-05-01 | 尼康股份有限公司 | 投影光學系統、曝光裝置以及曝光方法 |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3232270A3 (en) | 2005-05-12 | 2017-12-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
NL2003392A (en) | 2008-09-17 | 2010-03-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2004497A (en) * | 2009-05-01 | 2010-11-02 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2017128A (en) * | 2015-07-16 | 2017-01-23 | Asml Netherlands Bv | A lithographic apparatus, a projection system, a last lens element, a liquid control member and a device manufacturing method |
DE102016203442A1 (de) * | 2016-03-02 | 2017-09-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives |
US11305224B2 (en) | 2017-04-18 | 2022-04-19 | 3M Innovative Properties Company | Air filter media with post-pleat-deposited sorbent particles |
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Also Published As
Publication number | Publication date |
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JP2010153923A (ja) | 2010-07-08 |
JP2012151513A (ja) | 2012-08-09 |
SG173309A1 (en) | 2011-08-29 |
SG136134A1 (en) | 2007-10-29 |
US20170160650A1 (en) | 2017-06-08 |
US9442388B2 (en) | 2016-09-13 |
US9606448B2 (en) | 2017-03-28 |
TW200519529A (en) | 2005-06-16 |
EP2261740A3 (en) | 2011-04-27 |
JP5170790B2 (ja) | 2013-03-27 |
JP2007165934A (ja) | 2007-06-28 |
US20140071420A1 (en) | 2014-03-13 |
US10146142B2 (en) | 2018-12-04 |
US20190086819A1 (en) | 2019-03-21 |
US8804097B2 (en) | 2014-08-12 |
US20140347642A1 (en) | 2014-11-27 |
JP5414839B2 (ja) | 2014-02-12 |
US20070201012A1 (en) | 2007-08-30 |
US8208124B2 (en) | 2012-06-26 |
KR20050021872A (ko) | 2005-03-07 |
JP4586032B2 (ja) | 2010-11-24 |
EP2261740B1 (en) | 2014-07-09 |
US20120013868A1 (en) | 2012-01-19 |
EP2261740A2 (en) | 2010-12-15 |
TWI254189B (en) | 2006-05-01 |
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