KR100625916B1 - 전압-클램프된 게이트를 가진 파워 ｍｏｓｆｅｔ - Google Patents

전압-클램프된 게이트를 가진 파워 ｍｏｓｆｅｔ Download PDF

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Publication number
KR100625916B1
KR100625916B1 KR1020000023687A KR20000023687A KR100625916B1 KR 100625916 B1 KR100625916 B1 KR 100625916B1 KR 1020000023687 A KR1020000023687 A KR 1020000023687A KR 20000023687 A KR20000023687 A KR 20000023687A KR 100625916 B1 KR100625916 B1 KR 100625916B1
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KR
South Korea
Prior art keywords
voltage
gate
diode
source
mosfet
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020000023687A
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English (en)
Korean (ko)
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KR20000077143A (ko
Inventor
윌리엄스리차드케이.
Original Assignee
실리코닉스 인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 실리코닉스 인코퍼레이티드 filed Critical 실리코닉스 인코퍼레이티드
Publication of KR20000077143A publication Critical patent/KR20000077143A/ko
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Publication of KR100625916B1 publication Critical patent/KR100625916B1/ko
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
KR1020000023687A 1999-05-05 2000-05-03 전압-클램프된 게이트를 가진 파워 ｍｏｓｆｅｔ Expired - Fee Related KR100625916B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9/306,003 1999-05-05
US09/306,003 1999-05-05
US09/306,003 US6172383B1 (en) 1997-12-31 1999-05-05 Power MOSFET having voltage-clamped gate

Publications (2)

Publication Number Publication Date
KR20000077143A KR20000077143A (ko) 2000-12-26
KR100625916B1 true KR100625916B1 (ko) 2006-09-20

Family

ID=23183305

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000023687A Expired - Fee Related KR100625916B1 (ko) 1999-05-05 2000-05-03 전압-클램프된 게이트를 가진 파워 ｍｏｓｆｅｔ

Country Status (5)

Country Link
US (1) US6172383B1 (enExample)
EP (1) EP1063757B1 (enExample)
JP (2) JP4369009B2 (enExample)
KR (1) KR100625916B1 (enExample)
DE (1) DE60009214T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101799017B1 (ko) 2011-08-18 2017-11-20 에스케이하이닉스 주식회사 전압 안정화 회로를 구비한 반도체 집적 회로
KR101818537B1 (ko) * 2011-07-14 2018-01-15 현대모비스 주식회사 Ｍｏｓｆｅｔ 보호 회로 및 방법

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KR101818537B1 (ko) * 2011-07-14 2018-01-15 현대모비스 주식회사 Ｍｏｓｆｅｔ 보호 회로 및 방법
KR101799017B1 (ko) 2011-08-18 2017-11-20 에스케이하이닉스 주식회사 전압 안정화 회로를 구비한 반도체 집적 회로

Also Published As

Publication number Publication date
EP1063757B1 (en) 2004-03-24
KR20000077143A (ko) 2000-12-26
EP1063757A3 (en) 2001-12-05
EP1063757A2 (en) 2000-12-27
DE60009214D1 (de) 2004-04-29
JP5178649B2 (ja) 2013-04-10
US6172383B1 (en) 2001-01-09
JP2009224803A (ja) 2009-10-01
JP4369009B2 (ja) 2009-11-18
DE60009214T2 (de) 2005-01-27
JP2000349235A (ja) 2000-12-15

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