KR100577615B1 - 반도체장치제조방법 - Google Patents

반도체장치제조방법 Download PDF

Info

Publication number
KR100577615B1
KR100577615B1 KR1019980031637A KR19980031637A KR100577615B1 KR 100577615 B1 KR100577615 B1 KR 100577615B1 KR 1019980031637 A KR1019980031637 A KR 1019980031637A KR 19980031637 A KR19980031637 A KR 19980031637A KR 100577615 B1 KR100577615 B1 KR 100577615B1
Authority
KR
South Korea
Prior art keywords
region
gettering
group
semiconductor film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980031637A
Other languages
English (en)
Korean (ko)
Other versions
KR19990014341A (ko
Inventor
히데토 오누마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR19990014341A publication Critical patent/KR19990014341A/ko
Application granted granted Critical
Publication of KR100577615B1 publication Critical patent/KR100577615B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
KR1019980031637A 1997-07-30 1998-07-30 반도체장치제조방법 Expired - Fee Related KR100577615B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21995597A JP3844566B2 (ja) 1997-07-30 1997-07-30 半導体装置の作製方法
JP97-219955 1997-07-30

Publications (2)

Publication Number Publication Date
KR19990014341A KR19990014341A (ko) 1999-02-25
KR100577615B1 true KR100577615B1 (ko) 2006-11-07

Family

ID=16743662

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980031637A Expired - Fee Related KR100577615B1 (ko) 1997-07-30 1998-07-30 반도체장치제조방법

Country Status (3)

Country Link
US (2) US6465288B1 (https=)
JP (1) JP3844566B2 (https=)
KR (1) KR100577615B1 (https=)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7166500B2 (en) * 1997-10-21 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
KR100343134B1 (ko) * 1998-07-09 2002-10-25 삼성전자 주식회사 유전막형성방법
US6294441B1 (en) * 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
KR100500631B1 (ko) * 1998-10-23 2005-11-25 삼성전자주식회사 박막트랜지스터의 제조방법_
US6878968B1 (en) 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4712156B2 (ja) * 1999-05-10 2011-06-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6821827B2 (en) 1999-12-28 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW507258B (en) 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
US6852371B2 (en) * 2000-03-03 2005-02-08 Midwest Research Institute Metal processing for impurity gettering in silicon
TWI301907B (en) 2000-04-03 2008-10-11 Semiconductor Energy Lab Semiconductor device, liquid crystal display device and manfacturing method thereof
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
JP5078201B2 (ja) * 2000-07-11 2012-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4641598B2 (ja) * 2000-08-03 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6830965B1 (en) * 2000-10-25 2004-12-14 Sharp Laboratories Of America, Inc. Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization
TW515104B (en) * 2000-11-06 2002-12-21 Semiconductor Energy Lab Electro-optical device and method of manufacturing the same
US6939816B2 (en) * 2000-11-10 2005-09-06 Texas Instruments Incorporated Method to improve the uniformity and reduce the surface roughness of the silicon dielectric interface
US6759313B2 (en) 2000-12-05 2004-07-06 Semiconductor Energy Laboratory Co., Ltd Method of fabricating a semiconductor device
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) * 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4926321B2 (ja) * 2001-01-24 2012-05-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6809023B2 (en) * 2001-04-06 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film
JP3961240B2 (ja) 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5127101B2 (ja) * 2001-06-28 2013-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100439347B1 (ko) * 2001-07-04 2004-07-07 주승기 실리콘 박막의 결정화 방법 및 이를 이용한 반도체 소자제조 방법
JP4267266B2 (ja) * 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003077832A (ja) * 2001-08-30 2003-03-14 Sharp Corp 半導体装置及びその製造方法
TW589667B (en) * 2001-09-25 2004-06-01 Sharp Kk Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
US6727122B2 (en) * 2001-12-29 2004-04-27 Lg. Philips Lcd Co., Ltd. Method of fabricating polysilicon thin film transistor
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4115158B2 (ja) * 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6861338B2 (en) 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
JP4115252B2 (ja) * 2002-11-08 2008-07-09 シャープ株式会社 半導体膜およびその製造方法ならびに半導体装置およびその製造方法
KR100977538B1 (ko) * 2003-01-10 2010-08-23 엘지디스플레이 주식회사 폴리실리콘 박막의 제조방법
KR100530041B1 (ko) * 2003-03-28 2005-11-22 주승기 니켈 합금층을 이용한 다결정 실리콘 박막 형성방법 및이를 이용한 박막 트랜지스터의 제조방법
US7276402B2 (en) * 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI293511B (en) * 2006-01-05 2008-02-11 Chunghwa Picture Tubes Ltd Methods for fabricating a polysilicon layer and a thin film transistor
KR100770268B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100770269B1 (ko) 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100742381B1 (ko) 2006-06-28 2007-07-24 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
TW200824003A (en) * 2006-11-17 2008-06-01 Chunghwa Picture Tubes Ltd Semiconductor device and manufacturing method thereof
US20080296562A1 (en) * 2007-05-31 2008-12-04 Murduck James M Methods and apparatus for fabricating carbon nanotubes and carbon nanotube devices
WO2008156040A1 (en) * 2007-06-20 2008-12-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100806017B1 (ko) * 2007-11-21 2008-02-26 송경진 가역성 1회용 혈관 수지침
JP5292066B2 (ja) * 2007-12-05 2013-09-18 株式会社半導体エネルギー研究所 表示装置
JP4954047B2 (ja) * 2007-12-17 2012-06-13 シャープ株式会社 半導体装置及びその製造方法
KR101393611B1 (ko) * 2009-06-02 2014-05-12 가부시키가이샤 사무코 반도체 디바이스용 반도체 기판의 제조방법, 반도체 디바이스용 반도체 기판의 제조장치, 반도체 디바이스의 제조방법 및 반도체 디바이스의 제조장치
KR102308905B1 (ko) * 2014-11-21 2021-10-06 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를 구비한 유기 발광 표시 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297122A (ja) * 1994-04-21 1995-11-10 Sharp Corp 半導体装置およびその製造方法
JPH0832074A (ja) * 1994-07-15 1996-02-02 Sharp Corp 半導体装置およびその製造方法
US5550070A (en) * 1993-12-27 1996-08-27 Sharp Kabushiki Kaisha Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same
JPH08330602A (ja) * 1995-03-27 1996-12-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
US6465288B1 (en) * 1997-07-30 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device using a crystalline semiconductor film

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JPH06349735A (ja) * 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
TW264575B (https=) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
US5675176A (en) * 1994-09-16 1997-10-07 Kabushiki Kaisha Toshiba Semiconductor device and a method for manufacturing the same
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
JPH09120965A (ja) * 1995-10-25 1997-05-06 Toshiba Corp 半導体装置の製造方法
US5985740A (en) * 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
US6140166A (en) * 1996-12-27 2000-10-31 Semicondutor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor and method for manufacturing semiconductor device
JP3942683B2 (ja) * 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3765902B2 (ja) * 1997-02-19 2006-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法および電子デバイスの作製方法
JP3983334B2 (ja) * 1997-02-20 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844552B2 (ja) * 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW379360B (en) * 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP3974229B2 (ja) * 1997-07-22 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6197624B1 (en) * 1997-08-29 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of adjusting the threshold voltage in an SOI CMOS
US6121660A (en) * 1997-09-23 2000-09-19 Semiconductor Energy Laboratory Co., Ltd. Channel etch type bottom gate semiconductor device
JP2001135573A (ja) * 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP2001319878A (ja) * 2000-05-11 2001-11-16 Sharp Corp 半導体製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5550070A (en) * 1993-12-27 1996-08-27 Sharp Kabushiki Kaisha Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same
JPH07297122A (ja) * 1994-04-21 1995-11-10 Sharp Corp 半導体装置およびその製造方法
JPH0832074A (ja) * 1994-07-15 1996-02-02 Sharp Corp 半導体装置およびその製造方法
JPH08330602A (ja) * 1995-03-27 1996-12-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
US6465288B1 (en) * 1997-07-30 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device using a crystalline semiconductor film
US6670225B2 (en) * 1997-07-30 2003-12-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
US20030008439A1 (en) 2003-01-09
JPH1154760A (ja) 1999-02-26
US6670225B2 (en) 2003-12-30
US6465288B1 (en) 2002-10-15
KR19990014341A (ko) 1999-02-25
JP3844566B2 (ja) 2006-11-15

Similar Documents

Publication Publication Date Title
KR100577615B1 (ko) 반도체장치제조방법
US5550070A (en) Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same
KR100259665B1 (ko) 반도체장치의 제조방법
KR100297318B1 (ko) 반도체장치제작방법
US5940690A (en) Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region
US5977559A (en) Thin-film transistor having a catalyst element in its active regions
CN100379023C (zh) 使用单畴区的半导体器件
US6919237B2 (en) Process for fabricating thin film transistors
KR100209198B1 (ko) 반도체장치 및 그 제조방법
US6337232B1 (en) Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
US5677549A (en) Semiconductor device having a plurality of crystalline thin film transistors
KR100538893B1 (ko) 반도체디바이스제조방법
US6300659B1 (en) Thin-film transistor and fabrication method for same
KR19980071407A (ko) 반도체 장치의 제조 방법
US7186601B2 (en) Method of fabricating a semiconductor device utilizing a catalyst material solution
KR100615502B1 (ko) 반도체 장치 제조 방법
KR980012600A (ko) 반도체 장치 및 박막 트랜지스터의 제조 방법
US5966596A (en) Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel
KR0180573B1 (ko) 반도체 장치 및 그 제작방법
JP4162727B2 (ja) 半導体装置の作製方法
JP3768260B2 (ja) トランスファゲイト回路
JP3181817B2 (ja) 薄膜トランジスタ
JP3181901B2 (ja) 薄膜トランジスタ
JP3886827B2 (ja) 半導体装置の作製方法
JP3664750B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160329

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180502

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180502

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000