KR100551319B1 - 횡전계방식 액정표시장치, 횡전계방식 액정표시장치의제조방법 및 주사노광장치 - Google Patents

횡전계방식 액정표시장치, 횡전계방식 액정표시장치의제조방법 및 주사노광장치 Download PDF

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KR100551319B1
KR100551319B1 KR1020030039603A KR20030039603A KR100551319B1 KR 100551319 B1 KR100551319 B1 KR 100551319B1 KR 1020030039603 A KR1020030039603 A KR 1020030039603A KR 20030039603 A KR20030039603 A KR 20030039603A KR 100551319 B1 KR100551319 B1 KR 100551319B1
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photomask
positive resist
scanning exposure
liquid crystal
thickness
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KR1020030039603A
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Korean (ko)
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KR20040004055A (ko
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히로따나오또
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오바야시세이꼬우 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/02—Exposure apparatus for contact printing
    • G03B27/10—Copying apparatus with a relative movement between the original and the light source during exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
KR1020030039603A 2002-07-01 2003-06-18 횡전계방식 액정표시장치, 횡전계방식 액정표시장치의제조방법 및 주사노광장치 KR100551319B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002237219A JP4565799B2 (ja) 2002-07-01 2002-07-01 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
JPJP-P-2002-00237219 2002-07-01

Publications (2)

Publication Number Publication Date
KR20040004055A KR20040004055A (ko) 2004-01-13
KR100551319B1 true KR100551319B1 (ko) 2006-02-13

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KR1020030039603A KR100551319B1 (ko) 2002-07-01 2003-06-18 횡전계방식 액정표시장치, 횡전계방식 액정표시장치의제조방법 및 주사노광장치

Country Status (6)

Country Link
US (5) US7125654B2 (fr)
EP (1) EP1378788B1 (fr)
JP (1) JP4565799B2 (fr)
KR (1) KR100551319B1 (fr)
CN (1) CN100370347C (fr)
TW (1) TWI282897B (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100686228B1 (ko) * 2000-03-13 2007-02-22 삼성전자주식회사 사진 식각용 장치 및 방법, 그리고 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법
JP4667846B2 (ja) * 2004-12-10 2011-04-13 三菱電機株式会社 薄膜トランジスタアレイ基板の製造方法
TWI252587B (en) 2004-12-14 2006-04-01 Quanta Display Inc Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display
KR101107685B1 (ko) * 2004-12-28 2012-01-25 엘지디스플레이 주식회사 횡전계방식 액정표시소자 및 그 제조방법
CN100371814C (zh) * 2005-01-26 2008-02-27 广辉电子股份有限公司 薄膜晶体管液晶显示器的像素电极接触点的制造方法
TWI260774B (en) 2005-07-19 2006-08-21 Quanta Display Inc Method for manufacturing liquid crystal display substrates
CN100449384C (zh) * 2005-08-03 2009-01-07 友达光电股份有限公司 液晶显示装置基板的制造方法
TWI261360B (en) 2005-08-17 2006-09-01 Au Optronics Corp A method of manufacturing a thin film transistor matrix substrate
JP2007310334A (ja) 2006-05-19 2007-11-29 Mikuni Denshi Kk ハーフトーン露光法を用いた液晶表示装置の製造法
JP5477523B2 (ja) * 2006-06-15 2014-04-23 三国電子有限会社 低コスト大画面広視野角高速応答液晶表示装置
KR101239633B1 (ko) 2006-06-26 2013-03-07 엘지디스플레이 주식회사 액정표시소자의 제조방법
KR101282404B1 (ko) 2006-09-05 2013-07-04 삼성디스플레이 주식회사 액정 표시 장치의 제조 방법
TWI325638B (en) * 2007-01-22 2010-06-01 Au Optronics Corp Method for manufacturing pixel structure
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5512930B2 (ja) 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20080303037A1 (en) * 2007-06-04 2008-12-11 Irving Lyn M Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
JP4524692B2 (ja) * 2007-07-25 2010-08-18 セイコーエプソン株式会社 基板の製造方法及び液晶表示装置の製造方法
KR101484063B1 (ko) 2008-08-14 2015-01-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR101783193B1 (ko) * 2008-09-12 2017-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101408715B1 (ko) * 2008-09-19 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101490148B1 (ko) 2008-09-19 2015-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101761108B1 (ko) * 2008-10-03 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5392670B2 (ja) * 2008-12-01 2014-01-22 株式会社ジャパンディスプレイ 液晶表示装置及びその製造方法
JP2010161719A (ja) * 2009-01-09 2010-07-22 Nec Engineering Ltd 画像読取装置
CN101833201B (zh) * 2009-03-12 2014-02-19 北京京东方光电科技有限公司 扫描线序号的标注方法
JP6004635B2 (ja) * 2011-02-01 2016-10-12 キヤノン株式会社 半導体装置の製造方法
CN104749902B (zh) * 2013-12-31 2017-02-15 上海微电子装备有限公司 掩模板面型整形装置
CN103915580B (zh) 2014-03-31 2016-06-29 京东方科技集团股份有限公司 一种woled背板及其制作方法
JP6335652B2 (ja) * 2014-05-27 2018-05-30 三菱電機株式会社 表示装置、薄膜トランジスタの製造方法
CN104062794B (zh) * 2014-06-10 2016-09-21 深圳市华星光电技术有限公司 掩膜板以及紫外线掩膜板、阵列基板的制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851514A (ja) * 1981-09-22 1983-03-26 Toshiba Corp ウエハ露光方法及びその装置
US5028955A (en) * 1989-02-16 1991-07-02 Tokyo Electron Limited Exposure apparatus
JP2862385B2 (ja) * 1991-03-13 1999-03-03 キヤノン株式会社 露光装置
JP3374467B2 (ja) * 1993-09-14 2003-02-04 株式会社ニコン 投影露光装置及び露光方法
JP3706951B2 (ja) * 1995-06-26 2005-10-19 株式会社ニコン 露光装置
JPH09106075A (ja) * 1995-10-06 1997-04-22 Dainippon Screen Mfg Co Ltd 基板の露光装置
JP3126645B2 (ja) 1995-11-02 2001-01-22 キヤノン株式会社 走査型露光装置、デバイス製造方法およびデバイス
JPH09180989A (ja) * 1995-12-26 1997-07-11 Toshiba Corp 露光装置および露光方法
KR980005334A (ko) * 1996-06-04 1998-03-30 고노 시게오 노광 방법 및 노광 장치
JP3313282B2 (ja) * 1996-06-24 2002-08-12 株式会社日立製作所 液晶表示装置
JPH11237378A (ja) * 1998-02-19 1999-08-31 Fuji Photo Film Co Ltd 全血から血清を分離する方法
JP4264675B2 (ja) * 1998-08-17 2009-05-20 栄 田中 液晶表示装置とその製造方法
US6255130B1 (en) * 1998-11-19 2001-07-03 Samsung Electronics Co., Ltd. Thin film transistor array panel and a method for manufacturing the same
TW413844B (en) * 1998-11-26 2000-12-01 Samsung Electronics Co Ltd Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films
JP2000258916A (ja) 1999-03-09 2000-09-22 Sakae Tanaka 大型基板用露光装置
JP4249869B2 (ja) * 1999-12-22 2009-04-08 株式会社オーク製作所 基板搬送装置
JP5408829B2 (ja) 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
JP2001318470A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光装置、マイクロデバイス、フォトマスク、及び露光方法
KR100686228B1 (ko) * 2000-03-13 2007-02-22 삼성전자주식회사 사진 식각용 장치 및 방법, 그리고 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법
JP2001324725A (ja) * 2000-05-12 2001-11-22 Hitachi Ltd 液晶表示装置およびその製造方法
KR100372579B1 (ko) * 2000-06-21 2003-02-17 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
KR100464204B1 (ko) * 2001-06-08 2005-01-03 엘지.필립스 엘시디 주식회사 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법

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EP1378788B1 (fr) 2015-06-17
US20060040214A1 (en) 2006-02-23
US9201309B2 (en) 2015-12-01
TWI282897B (en) 2007-06-21
EP1378788A2 (fr) 2004-01-07
JP4565799B2 (ja) 2010-10-20
US7749688B2 (en) 2010-07-06
US20040048405A1 (en) 2004-03-11
US20080297756A1 (en) 2008-12-04
US7125654B2 (en) 2006-10-24
JP2004038130A (ja) 2004-02-05
CN1470927A (zh) 2004-01-28
US20060035175A1 (en) 2006-02-16
CN100370347C (zh) 2008-02-20
US20130314687A1 (en) 2013-11-28
KR20040004055A (ko) 2004-01-13

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