JP6503458B2 - 薄膜トランジスタの製造方法及び表示パネル - Google Patents
薄膜トランジスタの製造方法及び表示パネル Download PDFInfo
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- JP6503458B2 JP6503458B2 JP2017513841A JP2017513841A JP6503458B2 JP 6503458 B2 JP6503458 B2 JP 6503458B2 JP 2017513841 A JP2017513841 A JP 2017513841A JP 2017513841 A JP2017513841 A JP 2017513841A JP 6503458 B2 JP6503458 B2 JP 6503458B2
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- 239000010409 thin film Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 118
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 91
- 239000010408 film Substances 0.000 claims description 83
- 229920005591 polysilicon Polymers 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000005224 laser annealing Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000002679 ablation Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003796 beauty Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Description
また、ソース電極及びドレイン電極は、n+シリコン層上に形成された金属層をパターニングすることにより形成された、該金属層には窪みが形成されている。該窪みは前記パターニングに係る位置、例えば、前記チャネル領域の位置を表すので、該窪みがアライメントマークとして用いられる。
2 ゲート電極
3 ゲート絶縁膜
4 第1のアモルファスシリコン層
5 ポリシリコン層
6 第2のアモルファスシリコン層
7 n+シリコン層
8 ソース電極
9 ドレイン電極
20 除去部
21 窪み
M 金属層
GL ゲートバスライン
Claims (6)
- 薄膜トランジスタの製造方法において、
基板の表面にゲート電極を形成する工程と、
前記ゲート電極が形成された前記基板の表面に絶縁膜を形成する工程と、
前記絶縁膜が形成された前記基板の表面に第1アモルファスシリコン層を形成する工程と、
前記第1アモルファスシリコン層の所要箇所にエネルギービームを照射して前記所要箇所をポリシリコン層に変化させるアニール工程と、
該アニール工程の際、前記所要箇所に対応付けた他の箇所にエネルギービームを照射して該他の箇所に所要形状の除去部を形成する除去部形成工程と、
前記ポリシリコン層を覆って第2アモルファスシリコン層を形成する工程と、
前記第2アモルファスシリコン層上にn+シリコン層を形成する工程と、
前記n+シリコン層に所要のパターンを形成する工程と、
前記第1アモルファスシリコン層、前記第2アモルファスシリコン層、及び前記n+シリコン層をエッチングする工程と、
前記エッチングする工程の後に、前記基板の表面に金属層を形成する工程と、
前記金属層の形成の際に、前記除去部の存在に起因し、前記第2アモルファスシリコン層及び前記n+シリコン層を介して前記金属層に形成された窪みの位置に基づいて前記金属層をパターニングすることによりソース電極及びドレイン電極を形成する工程と
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記アニール工程及び前記除去部形成工程は、透光率の異なる複数の透光部を有するハーフトーンマスクを用いて共に行われることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記窪みは、前記所要箇所近傍であって、前記ゲート電極と接続されるゲートバスライン上に形成されることを特徴とする請求項1又は2に記載の薄膜トランジスタの製造方法。
- 薄膜トランジスタと前記薄膜トランジスタのソース電極及びドレイン電極のパターニングに用いたアライメントマークとを備える表示パネルにおいて、
前記薄膜トランジスタは、
基板の表面に形成されたゲート電極と、
前記基板及び前記ゲート電極上に形成された絶縁膜と、
前記絶縁膜上に形成された第1アモルファスシリコン層における前記ゲート電極の上側の所要箇所に形成されたポリシリコン層と、
前記第1アモルファスシリコン層をエッチングすることにより前記ゲート電極の上側に形成された、前記薄膜トランジスタの内側の前記第1アモルファスシリコン層と、
前記薄膜トランジスタの内側の前記第1アモルファスシリコン層及び前記ポリシリコン層上に形成された第2アモルファスシリコン層と、
前記第2アモルファスシリコン層上に形成されたn+シリコン層と、
前記n+シリコン層形成後の前記基板の表面に形成された金属層のパターニングにより形成された前記ソース電極及び前記ドレイン電極と
を備え、
前記表示パネルは、
前記薄膜トランジスタの外側の前記第1アモルファスシリコン層における前記所要箇所に対応する他の箇所に形成された除去部と、
前記除去部の存在に起因し、前記第2アモルファスシリコン層及び前記n+シリコン層を介して前記金属層に形成された前記アライメントマークとしての窪みと
を備えることを特徴とする表示パネル。 - 前記窪みは前記ゲート電極近傍であって、該ゲート電極と接続されるゲートバスライン上に形成されていることを特徴とする請求項4に記載の表示パネル。
- 前記薄膜トランジスタの内側の前記第1アモルファスシリコン層は、
前記ポリシリコン層の周囲に形成され、前記ポリシリコン層の厚みと同程度の厚みを有することを特徴とする請求項4又は請求項5に記載の表示パネル。
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US11024725B2 (en) | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
WO2017072921A1 (ja) * | 2015-10-29 | 2017-05-04 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ基板の製造方法 |
US11081507B2 (en) * | 2017-07-12 | 2021-08-03 | Sakai Display Products Corporation | Semiconductor device and method for manufacturing same |
WO2019012631A1 (ja) | 2017-07-12 | 2019-01-17 | 堺ディスプレイプロダクト株式会社 | 半導体装置およびその製造方法 |
CN107482066B (zh) * | 2017-09-20 | 2021-01-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
US20210225653A1 (en) * | 2018-06-06 | 2021-07-22 | Sakai Display Products Corporation | Laser annealing method, laser annealing apparatus and method for producing active matrix substrate |
JP2020004861A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
JP2020004860A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
JP2020004859A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
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CN110620105B (zh) * | 2019-10-22 | 2021-06-29 | 成都中电熊猫显示科技有限公司 | 阵列基板及其制造方法、阵列基板的图案偏移的检测方法 |
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