JPWO2016170571A1 - 薄膜トランジスタの製造方法及び表示パネル - Google Patents
薄膜トランジスタの製造方法及び表示パネル Download PDFInfo
- Publication number
- JPWO2016170571A1 JPWO2016170571A1 JP2017513841A JP2017513841A JPWO2016170571A1 JP WO2016170571 A1 JPWO2016170571 A1 JP WO2016170571A1 JP 2017513841 A JP2017513841 A JP 2017513841A JP 2017513841 A JP2017513841 A JP 2017513841A JP WO2016170571 A1 JPWO2016170571 A1 JP WO2016170571A1
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- amorphous silicon
- layer
- film transistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 117
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 106
- 229920005591 polysilicon Polymers 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 238000000137 annealing Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 12
- 238000002834 transmittance Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 31
- 239000011521 glass Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005224 laser annealing Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003796 beauty Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
また、ソース電極及びドレイン電極は、n+シリコン層上に形成された金属層をパターニングすることにより形成された、該金属層には窪みが形成されている。該窪みは前記パターニングに係る位置、例えば、前記チャネル領域の位置を表すので、該窪みがアライメントマークとして用いられる。
2 ゲート電極
3 ゲート絶縁膜
4 第1のアモルファスシリコン層
5 ポリシリコン層
6 第2のアモルファスシリコン層
7 n+シリコン層
8 ソース電極
9 ドレイン電極
20 除去部
21 窪み
M 金属層
GL ゲートバスライン
Claims (7)
- 薄膜トランジスタの製造方法において、
基板の表面にゲート電極を形成する工程と、
ゲート電極が形成された前記基板の表面に絶縁膜を形成する工程と、
絶縁膜が形成された前記基板の表面に第1アモルファスシリコン層を形成する工程と、
前記第1アモルファスシリコン層の離隔した複数の所要箇所にエネルギービームを照射して前記所要箇所をポリシリコン層に変化させるアニール工程と、
該アニール工程の際、前記複数の所要箇所に対応付けた他の箇所にエネルギービームを照射して該他の箇所に所要形状の除去部を形成する除去部形成工程と、
前記ポリシリコン層を覆って第2アモルファスシリコン層を形成する工程と、
前記第2アモルファスシリコン層の表面にn+シリコン層を形成する工程と、
前記n+シリコン層に所要のパターンを形成する工程と、
前記第1アモルファスシリコン層、第2アモルファスシリコン層及びn+シリコン層をエッチングする工程と、
エッチング後の前記n+シリコン層上に金属層を形成する工程と、
前記金属層の形成の際、前記除去部により形成される窪みの位置に基づいてソース電極及びドレイン電極を形成する工程と
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記アニール工程及び除去部形成工程は、透光率の異なる複数の透光部を有するハーフトーンマスクを用いて共に行われることを特徴とする薄膜トランジスタの製造方法。
- 前記窪みは複数であり、前記複数の所要箇所近傍であって、前記ゲート電極と接続されるゲートバスライン上に形成されることを特徴とする薄膜トランジスタの製造方法。
- 薄膜トランジスタにおいて、
基板の表面に形成されたゲート電極と、
前記ゲート電極の上側に形成されたポリシリコン層と、
前記ポリシリコン層の上側に形成されたアモルファスシリコン層及びn+シリコン層と、
前記n+シリコン層上に形成された金属層のパターニングにより形成されたソース電極及びドレイン電極と、
前記金属層に形成され、前記パターニングに係る位置を表す窪みと
を備えることを特徴とする薄膜トランジスタ。 - 前記窪みは前記ゲート電極近傍であって、該ゲート電極と接続されるゲートバスライン上に形成されていることを特徴とする請求項4に記載の薄膜トランジスタ。
- 前記アモルファスシリコン層は、
前記ポリシリコン層の周囲に形成され、該ポリシリコン層の厚みと同程度の厚みを有する第1のアモルファスシリコン層と、
前記ポリシリコン層及び第1のアモルファスシリコン層の表面に形成された第2のアモルファスシリコン層と
を有することを特徴とする請求項4又は請求項5に記載の薄膜トランジスタ。 - 請求項4から請求項6までのいずれか1項に記載の薄膜トランジスタを備えることを特徴とする表示パネル。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2015/061991 WO2016170571A1 (ja) | 2015-04-20 | 2015-04-20 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016170571A1 true JPWO2016170571A1 (ja) | 2018-02-22 |
JP6503458B2 JP6503458B2 (ja) | 2019-04-17 |
Family
ID=57144449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017513841A Expired - Fee Related JP6503458B2 (ja) | 2015-04-20 | 2015-04-20 | 薄膜トランジスタの製造方法及び表示パネル |
Country Status (4)
Country | Link |
---|---|
US (1) | US10453876B2 (ja) |
JP (1) | JP6503458B2 (ja) |
CN (1) | CN107533979B (ja) |
WO (1) | WO2016170571A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024725B2 (en) * | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
WO2017072921A1 (ja) * | 2015-10-29 | 2017-05-04 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ基板の製造方法 |
US11081507B2 (en) * | 2017-07-12 | 2021-08-03 | Sakai Display Products Corporation | Semiconductor device and method for manufacturing same |
WO2019012631A1 (ja) | 2017-07-12 | 2019-01-17 | 堺ディスプレイプロダクト株式会社 | 半導体装置およびその製造方法 |
CN107482066B (zh) * | 2017-09-20 | 2021-01-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN111886700A (zh) * | 2018-03-28 | 2020-11-03 | 堺显示器制品株式会社 | 有机el显示装置及其制造方法 |
CN112236843A (zh) * | 2018-06-06 | 2021-01-15 | 堺显示器制品株式会社 | 激光退火方法、激光退火装置及有源矩阵基板的制造方法 |
JP2020004859A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
JP2020004860A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
JP2020004861A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
WO2020031309A1 (ja) | 2018-08-08 | 2020-02-13 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法 |
CN110137261A (zh) * | 2018-10-29 | 2019-08-16 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN109473399B (zh) * | 2018-11-07 | 2020-12-01 | 京东方科技集团股份有限公司 | 显示基板制备方法 |
CN110620105B (zh) * | 2019-10-22 | 2021-06-29 | 成都中电熊猫显示科技有限公司 | 阵列基板及其制造方法、阵列基板的图案偏移的检测方法 |
WO2021189445A1 (zh) * | 2020-03-27 | 2021-09-30 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
CN113611752B (zh) * | 2021-07-19 | 2024-01-16 | Tcl华星光电技术有限公司 | 低温多晶硅tft的制作方法及低温多晶硅tft |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138920A (ja) * | 1989-10-24 | 1991-06-13 | Sony Corp | 半導体装置 |
JP2005051208A (ja) * | 2003-07-16 | 2005-02-24 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体基板、薄膜半導体基板の製造方法、結晶化方法、結晶化装置、薄膜半導体装置、および薄膜半導体装置の製造方法 |
JP2005101530A (ja) * | 2003-09-24 | 2005-04-14 | Lg Phillips Lcd Co Ltd | 多結晶シリコン層の製造方法及びこれを利用したスイッチング素子 |
JP2006114859A (ja) * | 2004-01-21 | 2006-04-27 | Seiko Epson Corp | アライメント方法、薄膜形成基板の製造方法、半導体装置の製造方法、及び電子機器の製造方法 |
US7728256B2 (en) * | 2003-12-24 | 2010-06-01 | Lg Display Co., Ltd. | Silicon crystallization apparatus and silicon crystallization method thereof |
JP2011003778A (ja) * | 2009-06-19 | 2011-01-06 | Panasonic Liquid Crystal Display Co Ltd | 薄膜トランジスタ基板及び薄膜トランジスタ基板の製造方法 |
JP2011029411A (ja) * | 2009-07-24 | 2011-02-10 | V Technology Co Ltd | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
JP2011139082A (ja) * | 2011-02-07 | 2011-07-14 | Sharp Corp | 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法および表示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI227913B (en) * | 2003-05-02 | 2005-02-11 | Au Optronics Corp | Method of fabricating polysilicon film by excimer laser crystallization process |
KR100954332B1 (ko) * | 2003-06-30 | 2010-04-21 | 엘지디스플레이 주식회사 | 액정표시소자와 그 제조방법 |
TW200507279A (en) | 2003-07-16 | 2005-02-16 | Adv Lcd Tech Dev Ct Co Ltd | Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same; |
JP2005236186A (ja) * | 2004-02-23 | 2005-09-02 | Seiko Epson Corp | 半導体装置とその製造方法並びに電子機器 |
CN100359651C (zh) * | 2004-05-17 | 2008-01-02 | 统宝光电股份有限公司 | 应用于高效能薄膜晶体管的多晶硅退火结构及其方法 |
KR100848341B1 (ko) * | 2007-06-13 | 2008-07-25 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
JP5226259B2 (ja) | 2007-08-21 | 2013-07-03 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
KR101432716B1 (ko) * | 2008-02-25 | 2014-08-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법 |
KR100982310B1 (ko) * | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
EP2458577B1 (en) * | 2009-07-24 | 2017-03-01 | Sharp Kabushiki Kaisha | Method for manufacturing thin film transistor substrate |
KR102273052B1 (ko) * | 2015-01-26 | 2021-07-06 | 삼성디스플레이 주식회사 | 디스플레이 제조 방법 |
-
2015
- 2015-04-20 JP JP2017513841A patent/JP6503458B2/ja not_active Expired - Fee Related
- 2015-04-20 WO PCT/JP2015/061991 patent/WO2016170571A1/ja active Application Filing
- 2015-04-20 CN CN201580078999.4A patent/CN107533979B/zh not_active Expired - Fee Related
- 2015-04-20 US US15/567,518 patent/US10453876B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138920A (ja) * | 1989-10-24 | 1991-06-13 | Sony Corp | 半導体装置 |
JP2005051208A (ja) * | 2003-07-16 | 2005-02-24 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体基板、薄膜半導体基板の製造方法、結晶化方法、結晶化装置、薄膜半導体装置、および薄膜半導体装置の製造方法 |
JP2005101530A (ja) * | 2003-09-24 | 2005-04-14 | Lg Phillips Lcd Co Ltd | 多結晶シリコン層の製造方法及びこれを利用したスイッチング素子 |
US7728256B2 (en) * | 2003-12-24 | 2010-06-01 | Lg Display Co., Ltd. | Silicon crystallization apparatus and silicon crystallization method thereof |
JP2006114859A (ja) * | 2004-01-21 | 2006-04-27 | Seiko Epson Corp | アライメント方法、薄膜形成基板の製造方法、半導体装置の製造方法、及び電子機器の製造方法 |
JP2011003778A (ja) * | 2009-06-19 | 2011-01-06 | Panasonic Liquid Crystal Display Co Ltd | 薄膜トランジスタ基板及び薄膜トランジスタ基板の製造方法 |
JP2011029411A (ja) * | 2009-07-24 | 2011-02-10 | V Technology Co Ltd | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
JP2011139082A (ja) * | 2011-02-07 | 2011-07-14 | Sharp Corp | 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法および表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107533979A (zh) | 2018-01-02 |
US10453876B2 (en) | 2019-10-22 |
US20180122839A1 (en) | 2018-05-03 |
WO2016170571A1 (ja) | 2016-10-27 |
JP6503458B2 (ja) | 2019-04-17 |
CN107533979B (zh) | 2020-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6503458B2 (ja) | 薄膜トランジスタの製造方法及び表示パネル | |
WO2016157351A1 (ja) | 薄膜トランジスタ及び表示パネル | |
JP6294488B2 (ja) | アレイ基板及びその製造方法とディスプレイ装置 | |
WO2016072024A1 (ja) | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル | |
JP6334057B2 (ja) | 薄膜トランジスタ及び表示パネル | |
JP6471237B2 (ja) | 表示装置及び表示装置の製造方法 | |
US10263121B2 (en) | Thin film transistor and method of manufacturing thin film transistor | |
US20090148987A1 (en) | Method for fabricating pixel structure | |
US8059077B2 (en) | Display device and manufacturing method of display device | |
US9041001B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
JP2010039394A (ja) | 表示装置及び表示装置の製造方法 | |
US11081507B2 (en) | Semiconductor device and method for manufacturing same | |
US10256350B2 (en) | Method of manufacturing thin film transistor and thin film transistor | |
KR20110062300A (ko) | 폴리실리콘을 이용한 박막트랜지스터를 포함하는 어레이 기판 및 이의 제조방법 | |
US11121262B2 (en) | Semiconductor device including thin film transistor and method for manufacturing the same | |
KR20090073479A (ko) | 액정표시장치용 어레이 기판 및 그의 제조방법 | |
KR20080055195A (ko) | 액정표시장치의 제조방법 | |
WO2017168594A1 (ja) | 薄膜トランジスタ、表示パネル及び薄膜トランジスタの製造方法 | |
JP2009026796A (ja) | 薄膜トランジスタおよびその製造方法 | |
KR20060032396A (ko) | 박막 트랜지스터 표시판 및 그것의 제조 방법 | |
JP2007220993A (ja) | 半導体膜の形成方法および表示パネルの製造方法 | |
JP2006317638A (ja) | 液晶表示装置の製造方法 | |
JP2009016614A (ja) | 薄膜トランジスタ、表示素子およびそれらの製造方法 | |
KR20070045457A (ko) | 영상 표시 장치 및 그 제조 방법 | |
KR20070000909A (ko) | 금속 게더링방법 및 이를 이용한 액정표시장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171017 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190325 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6503458 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |