CN104062794B - 掩膜板以及紫外线掩膜板、阵列基板的制造方法 - Google Patents

掩膜板以及紫外线掩膜板、阵列基板的制造方法 Download PDF

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CN104062794B
CN104062794B CN201410255565.4A CN201410255565A CN104062794B CN 104062794 B CN104062794 B CN 104062794B CN 201410255565 A CN201410255565 A CN 201410255565A CN 104062794 B CN104062794 B CN 104062794B
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CN104062794A (zh
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种掩膜板以及紫外线掩膜板、阵列基板的制造方法，属于显示技术领域，能够降低紫外线掩膜板的制造成本。该掩膜板，包括全透光区域、半透光区域和不透光区域；所述全透光区域对应于液晶面板的框胶区域，所述不透光区域对应液晶面板的图层图案区域，所述掩膜板的其余区域为所述半透光区域。本发明可用于液晶电视、液晶显示器、手机、平板电脑等显示装置的制造。

Description

掩膜板以及紫外线掩膜板、阵列基板的制造方法
技术领域
本发明涉及显示技术领域，具体地说，涉及一种掩膜板以及紫外线掩膜板、阵列基板的制造方法。
背景技术
随着显示技术的发展，液晶显示器已经成为最为常见的平板显示装置。
在液晶显示器的制造过程中，液晶成盒工艺是一项重要步骤。在液晶成盒工艺中，将阵列基板和彩膜基板进行对盒，还要对位于阵列基板和彩膜基板之间的框胶进行紫外线照射，使框胶固化。阵列基板上的薄膜晶体管(TFT)被紫外线照射后，电性能会受影响，所以对框胶进行紫外线照射时，要利用紫外线掩膜板遮挡住TFT等部分，而只将框胶暴露在外。
现有的紫外线掩膜板包括玻璃基板，以及形成在玻璃基板上的金属遮挡层，也是利用掩膜板通过构图工艺制成的。因为紫外线掩膜板可以反复使用，所以用于制造紫外线掩膜板的掩膜板的使用率非常低。因此，现有技术中，紫外线掩膜板的制造成本相对较高。
发明内容
本发明的目的在于提供一种掩膜板以及紫外线掩膜板、阵列基板的制造方法，以降低紫外线掩膜板的制造成本。
本发明提供一种掩膜板，包括全透光区域、半透光区域和不透光区域；
所述全透光区域对应于液晶面板的框胶区域，所述不透光区域对应液晶面板的图层图案区域，所述掩膜板的其余区域为所述半透光区域。
优选的，所述半透光区域的透光率在1/2至2/3之间。
其中，所述图层图案为栅极金属层图案；
所述液晶面板的源漏极金属层图案和透明电极层图案对应在所述半透光区域之内。
或者，所述图层图案为源漏极金属层图案；
所述液晶面板的栅极金属层图案和透明电极层图案对应在所述半透光区域之内。
或者，所述图层图案为透明电极层图案；
所述液晶面板的栅极金属层图案和源漏极金属层图案对应在所述半透光区域之内。
本发明还提供一种紫外线掩膜板的制造方法，包括：
在衬底基板上形成金属层；
在所述金属层上涂覆一层光刻胶；
利用上述的掩膜板，以第一光照强度对所述光刻胶进行曝光；
去除对应于所述掩膜板的全透光区域的光刻胶；
对所述金属层进行刻蚀；
去除剩余的光刻胶。
本发明还提供一种阵列基板的制造方法，包括：
在衬底基板上形成待刻蚀材料层；
在所述待刻蚀材料层上涂覆一层光刻胶；
利用上述的掩膜板，以第二光照强度对所述光刻胶进行曝光；
去除对应于所述掩膜板的全透光区域和半透光区域的光刻胶；
对所述待刻蚀材料层进行刻蚀，形成图层图案；
去除剩余的光刻胶。
优选的，所述待刻蚀材料层为金属层；
所述图层图案为栅极金属层图案或源漏极金属层图案。
或者，所述待刻蚀材料层为透明电极层；
所述图层图案为透明电极层图案。
本发明带来了以下有益效果：本发明提供的掩膜板中，全透光区域对应于液晶面板的框胶区域，即紫外线掩膜板上的金属遮挡层以外的区域，而半透光区域和不透光区域共同对应于紫外线掩膜板上的金属遮挡层的区域。该掩膜板用于制造紫外线掩膜板时，可以利用较低的第一光照强度对光刻胶进行曝光，使全透光区域的光刻胶完全去除，半透光区域的光刻胶部分去除，不透光区域的光刻胶保留，再经过刻蚀即可形成紫外线掩膜板。
另一方面，本发明提供的掩膜板中，不透光区域对应液晶面板的图层图案区域。该掩膜板用于制造阵列基板上的相应图层图案(例如栅极金属层图案)时，可以利用较高的第二光照强度对光刻胶进行曝光，使全透光区域和半透光区域的光刻胶完全去除，不透光区域的光刻胶保留，再经过刻蚀即可形成阵列基板上的相应图层图案。
因此，本发明提供的掩膜板既可以用于制造紫外线掩膜板，又可以用于制造阵列基板，实现了在紫外线掩膜板及阵列基板的制造中能够共用一个掩膜板，而不需要单独配备用于制造紫外线掩膜板的掩膜板，从而降低了紫外线掩膜板的制造成本。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是本发明实施例一提供的掩膜板的示意图；
图2a至图2d是本发明实施例二提供的紫外线掩膜板的制造过程的示意图；
图3a至图3d是本发明实施例三提供的阵列基板的制造过程的示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
实施例一：
如图1所示，本发明实施例提供一种掩膜板1，包括全透光区域11、半透光区域12和不透光区域13。全透光区域11对应于液晶面板的框胶区域，不透光区域13对应液晶面板的图层图案区域，掩膜板1的其余区域为半透光区域12。
本发明实施例提供的掩膜板既可以用于制造紫外线掩膜板，又可以用于制造阵列基板，实现了在紫外线掩膜板及阵列基板的制造中能够共用一个掩膜板，而不需要单独配备用于制造紫外线掩膜板的掩膜板，从而降低了紫外线掩膜板的制造成本。
实施例二：
本发明实施例提供一种紫外线掩膜板的制造方法，其中使用了实施例一中的掩膜板。
如图2a至图2d所示，该制造方法包括：
S11：在衬底基板2上形成金属层3。
具体的，可以利用常规的沉积工艺，在玻璃材料的衬底基板2上沉积一层金属层3。
S12：在金属层3上涂覆一层光刻胶4。
具体的，可以利用常规的涂覆工艺，在金属层3上涂覆一层光刻胶4。
S13：如图2a所示，利用实施例一中的掩膜板1，以第一光照强度对光刻胶4进行曝光。
作为一个优选方案，掩膜板1的半透光区域的透光率在1/2至2/3之间。利用掩膜板1，以较低的第一光照强度对光刻胶4进行曝光，使半透光区域12的光刻胶4能够在后续步骤S14中不被完全去除。
S14：如图2b所示，去除对应于掩膜板1的全透光区域11的光刻胶4。
具体的，可以利用灰化工艺去除已被曝光的光刻胶4。其中，全透光区域11的光刻胶4完全被去除；因为步骤S13中采用了较低的第一光照强度进行曝光，所以半透光区域12的光刻胶4只有部分被去除；不透光区域13的光刻胶4完全被保留。
S15：如图2c所示，对金属层3进行刻蚀。
具体的，可以对金属层3进行湿法刻蚀。因为半透光区域12和不透光区域13的光刻胶4还覆盖在金属层3上，所以只有全透光区域11(对应于液晶面板的框胶区域)的金属层3被刻蚀掉，而半透光区12域和不透光区域13的金属层3被保留，形成紫外线掩膜板上的金属遮挡层30。
S16：如图2d所示，去除剩余的光刻胶4。
利用湿法剥离工艺去除半透光区域12和不透光区域13剩余的光刻胶4，即可制成紫外线掩膜板。
实施例三：
本发明实施例提供一种阵列基板的制造方法，其中使用了实施例一中的掩膜板。该掩膜板的不透光区域对应液晶面板的图层图案区域，图层图案可以为栅极金属层图案、源漏极金属层图案或透明电极层图案。本实施例中，图层图案为栅极金属层图案，即利用该掩膜板形成阵列基板的栅极金属层图案，而液晶面板的源漏极金属层图案和透明电极层图案对应在半透光区域之内。
如图3a至图3d所示，该制造方法包括：
S21：在衬底基板2上形成待刻蚀材料层。
因为本实施例是利用实施例一中的掩膜板1形成栅极金属层图案，所以本实施例中的待刻蚀材料层为栅极金属层5。本步骤中可利用沉积工艺，在衬底基板2上沉积一层栅极金属层5。
S22：在栅极金属层5上涂覆一层光刻胶4。
具体的，可以利用常规的涂覆工艺，在栅极金属层5上涂覆一层光刻胶4。
S23：如图3a所示，利用实施例一中的掩膜板1，以第二光照强度对光刻胶4进行曝光。
具体的，利用该掩膜板1，以较高的第二光照强度对光刻胶4进行曝光。为使半透光区域12的光刻胶4能够在后续步骤S24中被完全去除，第二光照强度应当至少为第一光照强度的a倍，a为半透光区域12的透光率的倒数。例如，半透光区域12的透光率为1/2，则第二光照强度至少为第一光照强度的2倍。又如，半透光区域12的透光率为2/3，则第二光照强度至少为第一光照强度的1.5倍。
S24：如图3b所示，去除对应于掩膜板1的全透光区域11和半透光区域12的光刻胶4。
具体的，可以利用灰化工艺去除已被曝光的光刻胶4。因为步骤S23中采用了较高的第二光照强度进行曝光，所以全透光区域11和半透光区域12的光刻胶4都被完全去除；不透光区域13的光刻胶4被完全保留。
S25：如图3c所示，对栅极金属层5进行刻蚀，形成栅极金属层图案。
具体的，可以对栅极金属层5进行湿法刻蚀。因为全透光区域11和半透光区域12的光刻胶4都被完全去除了，而只有不透光区域13的光刻胶4被保留，所以对栅极金属层5进行刻蚀之后，只有不透光区域13(对应于栅极金属层图案)的栅极金属层5被保留。
S26：如图3d所示，去除剩余的光刻胶4。
利用湿法剥离工艺去除不透光区域13的光刻胶4，即可在衬底基板2上形成包括栅线51、公共电极线52的栅极金属层图案。
此外，阵列基板的制造方法还包括形成栅绝缘层、有源层、源漏极金属层图案、像素电极、钝化层等后续步骤，均可采用任意的常规方式进行，并且在后续步骤中通常不会再使用实施例一提供的掩膜板，因此本实施例中不再详细描述。
在其他实施方式中，掩膜板的不透光区域也可以对应阵列基板的其他图层图案。例如，不透光区域可以对应阵列基板的源漏极金属层图案，而液晶面板(阵列基板)的栅极金属层图案和透明电极层图案对应在半透光区域之内，则步骤S21中的待刻蚀材料层为源漏极金属层。或者，不透光区域也可以对应阵列基板的透明电极层图案，而液晶面板(阵列基板)的栅极金属层图案和源漏极金属层图案对应在半透光区域之内，则步骤S21中的待刻蚀材料层为透明电极层。
根据上述实施例可知，本发明实施例提供的掩膜板既可以用于制造紫外线掩膜板，又可以用于制造阵列基板，实现了在紫外线掩膜板及阵列基板的制造中能够共用一个掩膜板，而不需要单独配备用于制造紫外线掩膜板的掩膜板，从而降低了紫外线掩膜板的制造成本。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (9)

1.一种掩膜板，包括全透光区域、半透光区域和不透光区域；
所述全透光区域对应于液晶面板的框胶区域，所述不透光区域对应液晶面板的图层图案区域，所述掩膜板的其余区域为所述半透光区域，
其中，所述掩膜板在制造完紫外线掩膜板后还能够用于制造阵列基板。
2.如权利要求1所述的掩膜板，其特征在于，所述半透光区域的透光率在1/2至2/3之间。
3.如权利要求1所述的掩膜板，其特征在于，所述图层图案为栅极金属层图案；
所述液晶面板的源漏极金属层图案和透明电极层图案对应在所述半透光区域之内。
4.如权利要求1所述的掩膜板，其特征在于，所述图层图案为源漏极金属层图案；
所述液晶面板的栅极金属层图案和透明电极层图案对应在所述半透光区域之内。
5.如权利要求1所述的掩膜板，其特征在于，所述图层图案为透明电极层图案；
所述液晶面板的栅极金属层图案和源漏极金属层图案对应在所述半透光区域之内。
6.一种紫外线掩膜板的制造方法，包括：
在衬底基板上形成金属层；
在所述金属层上涂覆一层光刻胶；
利用如权利要求1至5任一项所述的掩膜板，以第一光照强度对所述光刻胶进行曝光，去除对应于所述掩膜板的全透光区域的光刻胶；
对所述金属层进行刻蚀；
去除剩余的光刻胶。
7.一种阵列基板的制造方法，包括：
在衬底基板上形成待刻蚀材料层；
在所述待刻蚀材料层上涂覆一层光刻胶；
利用如权利要求1至5任一项所述的掩膜板，以第二光照强度对所述光刻胶进行曝光，去除对应于所述掩膜板的全透光区域和半透光区域的光刻胶；
对所述待刻蚀材料层进行刻蚀，形成图层图案；
去除剩余的光刻胶。
8.如权利要求7所述的方法，其特征在于，所述待刻蚀材料层为金属层；
所述图层图案为栅极金属层图案或源漏极金属层图案。
9.如权利要求7所述的方法，其特征在于，所述待刻蚀材料层为透明电极层；
所述图层图案为透明电极层图案。
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CN104635419B (zh) * 2015-03-11 2019-05-24 京东方科技集团股份有限公司 一种阵列基板及其显示面板的制备方法、掩膜板
CN104810322A (zh) * 2015-05-18 2015-07-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板、显示装置、掩模板
CN105185739A (zh) * 2015-06-26 2015-12-23 京东方科技集团股份有限公司 阵列基板制作的方法、掩膜板、阵列基板和显示装置
CN104966791B (zh) * 2015-07-01 2018-05-11 深圳市华星光电技术有限公司 一种掩膜板及其制造方法、oled器件封装方法
CN105093753B (zh) * 2015-08-21 2019-02-12 武汉华星光电技术有限公司 掩膜板、阵列基板及其制造方法
CN105655289B (zh) * 2016-01-04 2019-03-08 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
KR102096269B1 (ko) * 2016-03-31 2020-04-03 주식회사 엘지화학 포토 마스크 및 이를 이용한 컬러필터용 컬럼 스페이서의 제조방법
CN107643657B (zh) * 2017-10-31 2019-10-11 武汉华星光电技术有限公司 一种改善面板外围tito残留的方法及光罩
CN107966876B (zh) * 2017-12-07 2021-09-17 通富微电子股份有限公司 一种光刻板、芯片模组及光刻板的制备方法
CN109541825A (zh) * 2018-09-30 2019-03-29 重庆惠科金渝光电科技有限公司 一种显示面板的制作方法和显示面板
CN111708449A (zh) * 2020-04-30 2020-09-25 南昌欧菲显示科技有限公司 触控模组及其制备方法、电子设备
WO2022000478A1 (zh) * 2020-07-03 2022-01-06 欧菲光集团股份有限公司 线路板制作方法及线路板
CN112180676A (zh) * 2020-09-23 2021-01-05 武汉华星光电技术有限公司 半色调掩模版、显示面板的制备方法及紫外掩膜版

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP4565799B2 (ja) * 2002-07-01 2010-10-20 大林精工株式会社 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
KR100919184B1 (ko) * 2002-12-30 2009-09-28 엘지디스플레이 주식회사 액정 표시 장치용 어레이 기판의 제조 방법
US9097918B2 (en) * 2012-06-25 2015-08-04 Shenzhen China Star Optoelectronics Technology Co., Ltd. Mask for curing frame sealant and liquid crystal display panel manufacturing method
US9110338B2 (en) * 2012-06-25 2015-08-18 Shenzhen China Star Optoelectronics Technology Co., Ltd. Mask for curing frame sealant and liquid crystal display panel manufacturing method
CN203224698U (zh) 2013-03-11 2013-10-02 合肥京东方光电科技有限公司 一种液晶面板及显示装置
CN103246154B (zh) * 2013-04-11 2015-05-13 合肥京东方光电科技有限公司 一种用于封框胶固化遮挡的掩模板的制造方法
CN103441128B (zh) * 2013-05-27 2016-01-20 南京中电熊猫液晶显示科技有限公司 一种tft阵列基板及其制造方法
CN103337522B (zh) * 2013-06-17 2016-06-15 南京中电熊猫液晶显示科技有限公司 一种金属氧化物薄膜晶体管阵列基板及其制造方法
CN103941481A (zh) * 2013-06-27 2014-07-23 上海中航光电子有限公司 一种掩模板的设计
CN103456740B (zh) * 2013-08-22 2016-02-24 京东方科技集团股份有限公司 像素单元及其制造方法、阵列基板和显示装置
CN103454815B (zh) * 2013-09-12 2016-06-01 合肥京东方光电科技有限公司 显示面板及其制造方法、显示装置

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