KR100527029B1 - 일렉트로 루미네센스 표시 장치 - Google Patents

일렉트로 루미네센스 표시 장치 Download PDF

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Publication number
KR100527029B1
KR100527029B1 KR10-2003-0027036A KR20030027036A KR100527029B1 KR 100527029 B1 KR100527029 B1 KR 100527029B1 KR 20030027036 A KR20030027036 A KR 20030027036A KR 100527029 B1 KR100527029 B1 KR 100527029B1
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KR
South Korea
Prior art keywords
electrode layer
insulating film
gate
layer
capacitor electrode
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Expired - Lifetime
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KR10-2003-0027036A
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English (en)
Korean (ko)
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KR20030085508A (ko
Inventor
안자이가쯔야
Original Assignee
산요덴키가부시키가이샤
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Publication of KR20030085508A publication Critical patent/KR20030085508A/ko
Application granted granted Critical
Publication of KR100527029B1 publication Critical patent/KR100527029B1/ko
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
KR10-2003-0027036A 2002-04-30 2003-04-29 일렉트로 루미네센스 표시 장치 Expired - Lifetime KR100527029B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00128008 2002-04-30
JP2002128008A JP4027149B2 (ja) 2002-04-30 2002-04-30 エレクトロルミネッセンス表示装置

Publications (2)

Publication Number Publication Date
KR20030085508A KR20030085508A (ko) 2003-11-05
KR100527029B1 true KR100527029B1 (ko) 2005-11-09

Family

ID=29267666

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0027036A Expired - Lifetime KR100527029B1 (ko) 2002-04-30 2003-04-29 일렉트로 루미네센스 표시 장치

Country Status (5)

Country Link
US (1) US7330168B2 (enExample)
JP (1) JP4027149B2 (enExample)
KR (1) KR100527029B1 (enExample)
CN (1) CN1276404C (enExample)
TW (1) TWI248775B (enExample)

Families Citing this family (29)

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US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
GB0313041D0 (en) * 2003-06-06 2003-07-09 Koninkl Philips Electronics Nv Display device having current-driven pixels
JP2005173881A (ja) * 2003-12-10 2005-06-30 Sanyo Electric Co Ltd Ｅｌ表示装置
NL1025134C2 (nl) * 2003-12-24 2005-08-26 Lg Philips Lcd Co Organische licht emitterende diode-inrichting van de soort met actieve matrix en daarvoor bestemde dunne-filmtransistor.
DE102004002587B4 (de) * 2004-01-16 2006-06-01 Novaled Gmbh Bildelement für eine Aktiv-Matrix-Anzeige
JP4529467B2 (ja) * 2004-02-13 2010-08-25 ソニー株式会社 画素回路および表示装置
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP3933667B2 (ja) * 2004-04-29 2007-06-20 三星エスディアイ株式会社 発光表示パネル及び発光表示装置
TWI467541B (zh) * 2004-09-16 2015-01-01 半導體能源研究所股份有限公司 顯示裝置和其驅動方法
US7586121B2 (en) * 2004-12-07 2009-09-08 Au Optronics Corp. Electroluminescence device having stacked capacitors
KR100712111B1 (ko) 2004-12-14 2007-04-27 삼성에스디아이 주식회사 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법
GB0506899D0 (en) 2005-04-05 2005-05-11 Plastic Logic Ltd Multiple conductive layer TFT
EP1866979B1 (en) * 2005-04-05 2016-11-02 Flexenable Limited Pixel driver circuit for active matrix display
US8633919B2 (en) 2005-04-14 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method of the display device, and electronic device
JP4350106B2 (ja) * 2005-06-29 2009-10-21 三星モバイルディスプレイ株式會社 平板表示装置及びその駆動方法
TWI429327B (zh) * 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
US8115206B2 (en) 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101324756B1 (ko) * 2005-10-18 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그의 구동방법
JP4661557B2 (ja) * 2005-11-30 2011-03-30 セイコーエプソン株式会社 発光装置および電子機器
JP4993292B2 (ja) * 2007-07-18 2012-08-08 カシオ計算機株式会社 表示パネル及びその製造方法
KR101839533B1 (ko) 2010-12-28 2018-03-19 삼성디스플레이 주식회사 유기 발광 표시 장치, 이의 구동 방법 및 그 제조 방법
JP5803232B2 (ja) 2011-04-18 2015-11-04 セイコーエプソン株式会社 有機ｅｌ装置、および電子機器
JP5853614B2 (ja) * 2011-11-10 2016-02-09 セイコーエプソン株式会社 電気光学装置および電子機器
JP6225902B2 (ja) 2012-06-15 2017-11-08 ソニー株式会社 表示装置および半導体装置
KR102110226B1 (ko) * 2013-09-11 2020-05-14 삼성디스플레이 주식회사 표시패널 및 그 제조방법
JP6459316B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
CN105097875A (zh) * 2015-06-11 2015-11-25 京东方科技集团股份有限公司 有机电致发光显示器件、显示装置及其制作方法
KR102566630B1 (ko) * 2015-12-30 2023-08-16 엘지디스플레이 주식회사 유기발광표시장치
JP7204429B2 (ja) * 2018-11-06 2023-01-16 キヤノン株式会社 表示装置および電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874770A (en) * 1996-10-10 1999-02-23 General Electric Company Flexible interconnect film including resistor and capacitor layers
JP3530362B2 (ja) * 1996-12-19 2004-05-24 三洋電機株式会社 自発光型画像表示装置
KR100226494B1 (ko) * 1997-02-20 1999-10-15 김영환 액정표시장치 및 그 제조방법
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
JP4334045B2 (ja) 1999-02-09 2009-09-16 三洋電機株式会社 エレクトロルミネッセンス表示装置
US6391801B1 (en) * 1999-09-01 2002-05-21 Micron Technology, Inc. Method of forming a layer comprising tungsten oxide
JP2001282137A (ja) 2000-03-30 2001-10-12 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
TWI300947B (en) * 2001-07-12 2008-09-11 Semiconductor Energy Lab Display device using electron source elements and method of driving same
JP3909583B2 (ja) * 2001-08-27 2007-04-25 セイコーエプソン株式会社 電気光学装置の製造方法
KR100453634B1 (ko) * 2001-12-29 2004-10-20 엘지.필립스 엘시디 주식회사 능동행렬 유기전기발광소자
US6853052B2 (en) * 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress

Also Published As

Publication number Publication date
US7330168B2 (en) 2008-02-12
KR20030085508A (ko) 2003-11-05
JP4027149B2 (ja) 2007-12-26
CN1455381A (zh) 2003-11-12
CN1276404C (zh) 2006-09-20
US20040012548A1 (en) 2004-01-22
JP2003323133A (ja) 2003-11-14
TWI248775B (en) 2006-02-01
TW200306754A (en) 2003-11-16

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