KR100524353B1 - 엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치 - Google Patents

엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치

Info

Publication number
KR100524353B1
KR100524353B1 KR10-2001-7001083A KR20017001083A KR100524353B1 KR 100524353 B1 KR100524353 B1 KR 100524353B1 KR 20017001083 A KR20017001083 A KR 20017001083A KR 100524353 B1 KR100524353 B1 KR 100524353B1
Authority
KR
South Korea
Prior art keywords
ray
synchrotron
semiconductor device
exposure apparatus
mirror
Prior art date
Application number
KR10-2001-7001083A
Other languages
English (en)
Other versions
KR20010085303A (ko
Inventor
이토가켄지
키타야마토요키
와타나베유타카
우자와순이치
Original Assignee
미쓰비시덴키 가부시키가이샤
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤, 캐논 가부시끼가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20010085303A publication Critical patent/KR20010085303A/ko
Application granted granted Critical
Publication of KR100524353B1 publication Critical patent/KR100524353B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10Scattering devices; Absorbing devices; Ionising radiation filters
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • G21K5/04Irradiation devices with beam-forming means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Particle Accelerators (AREA)
KR10-2001-7001083A 1999-05-28 2001-01-26 엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치 KR100524353B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/149621 1999-05-28
JP11149621A JP2000338299A (ja) 1999-05-28 1999-05-28 X線露光装置、x線露光方法、x線マスク、x線ミラー、シンクロトロン放射装置、シンクロトロン放射方法および半導体装置

Publications (2)

Publication Number Publication Date
KR20010085303A KR20010085303A (ko) 2001-09-07
KR100524353B1 true KR100524353B1 (ko) 2005-11-08

Family

ID=15479231

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-7001083A KR100524353B1 (ko) 1999-05-28 2001-01-26 엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치

Country Status (6)

Country Link
US (1) US6947518B2 (ko)
EP (1) EP1107293A4 (ko)
JP (1) JP2000338299A (ko)
KR (1) KR100524353B1 (ko)
TW (1) TW454208B (ko)
WO (1) WO2000074119A1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093684A (ja) * 2000-09-18 2002-03-29 Canon Inc X線露光装置、x線露光方法、半導体製造装置および微細構造体
JP2003163155A (ja) 2001-11-28 2003-06-06 Mitsubishi Electric Corp X線露光方法、x線露光装置、微細構造および半導体装置
JP2003233201A (ja) 2002-02-12 2003-08-22 Mitsubishi Electric Corp 露光方法、この露光方法に用いるレジスト、および、この露光方法により製造された半導体装置
JP2004273794A (ja) * 2003-03-10 2004-09-30 Mitsubishi Electric Corp X線マスクの製造方法およびそれにより製造されたx線マスクを用いた半導体装置の製造方法
US7575404B2 (en) * 2006-11-01 2009-08-18 Sps Technologies, Llc Nut plate fastener assembly for composite materials
EP1953537A1 (de) * 2007-01-30 2008-08-06 KEMMER, Josef, Dr. Vorrichtung zur Erfassung und/oder Leitung von Röntgenstrahlung unter Verwendung einer Röntgenoptik
KR100949141B1 (ko) 2007-11-06 2010-03-25 원광대학교산학협력단 X-선 튜브 광원에서의 특성방사선 획득 장치
US7978822B2 (en) * 2008-01-30 2011-07-12 Reflective X-Ray Optics Llc Mirror mounting, alignment, and scanning mechanism and scanning method for radiographic X-ray imaging, and X-ray imaging device having same
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
US9966161B2 (en) * 2015-09-21 2018-05-08 Uchicago Argonne, Llc Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics
KR102035949B1 (ko) * 2015-09-25 2019-10-23 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 X선 현미경
US10649209B2 (en) 2016-07-08 2020-05-12 Daqri Llc Optical combiner apparatus
US10804063B2 (en) * 2016-09-15 2020-10-13 Baker Hughes, A Ge Company, Llc Multi-layer X-ray source fabrication
US10481678B2 (en) 2017-01-11 2019-11-19 Daqri Llc Interface-based modeling and design of three dimensional spaces using two dimensional representations
DE102017202312B4 (de) * 2017-02-14 2018-10-04 Siemens Healthcare Gmbh Verfahren zur Herstellung eines Röntgen-Streustrahlenrasters
US11125993B2 (en) 2018-12-10 2021-09-21 Facebook Technologies, Llc Optical hyperfocal reflective systems and methods, and augmented reality and/or virtual reality displays incorporating same
US11221494B2 (en) 2018-12-10 2022-01-11 Facebook Technologies, Llc Adaptive viewport optical display systems and methods
JP2022516730A (ja) 2019-01-09 2022-03-02 フェイスブック・テクノロジーズ・リミテッド・ライアビリティ・カンパニー Ar、hmd、およびhud用途向けの光導波路における不均一な副瞳リフレクタおよび方法
CN118076920A (zh) 2021-10-20 2024-05-24 日本碍子株式会社 Euv透过膜
US11863730B2 (en) 2021-12-07 2024-01-02 Snap Inc. Optical waveguide combiner systems and methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1114800A (ja) * 1997-06-23 1999-01-22 Nippon Telegr & Teleph Corp <Ntt> X線反射鏡及びx線反射光学系
KR19990029914A (ko) * 1997-09-19 1999-04-26 베히중 알 미소 구조체의 제조방법

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110625A (en) * 1976-12-20 1978-08-29 International Business Machines Corporation Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays
JPS5829446Y2 (ja) * 1978-11-08 1983-06-28 オリンパス光学工業株式会社 カメラ用鏡筒
JPS5571311A (en) 1978-11-24 1980-05-29 Seiko Instr & Electronics Ltd Vibrator
JPS5635109A (en) * 1979-07-11 1981-04-07 Aga Ab Mirror
JPS60220933A (ja) * 1984-04-18 1985-11-05 Nec Corp X線露光マスク及びその製造方法
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Sor−x線露光装置
JPH03120714A (ja) * 1989-10-04 1991-05-22 Toshiba Corp X線露光装置
US5258091A (en) * 1990-09-18 1993-11-02 Sumitomo Electric Industries, Ltd. Method of producing X-ray window
US5214685A (en) * 1991-10-08 1993-05-25 Maxwell Laboratories, Inc. X-ray lithography mirror and method of making same
JP2995371B2 (ja) 1992-11-12 1999-12-27 セイコーインスツルメンツ株式会社 X線反射鏡用材料
JPH06194497A (ja) * 1992-12-24 1994-07-15 Univ Tohoku Bnを用いた高耐熱性軟x線多層膜反射鏡
US5356662A (en) * 1993-01-05 1994-10-18 At&T Bell Laboratories Method for repairing an optical element which includes a multilayer coating
US5374974A (en) * 1993-04-30 1994-12-20 Lsi Logic Corporation High speed shuttle for gating a radiation beam, particularly for semiconductor lithography apparatus
BE1007281A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5677939A (en) * 1994-02-23 1997-10-14 Nikon Corporation Illuminating apparatus
US5503958A (en) * 1994-05-27 1996-04-02 Motorola Inc. Method for forming a circuit pattern
US5528364A (en) * 1994-07-19 1996-06-18 The Regents, University Of California High resolution EUV monochromator/spectrometer
JPH08152499A (ja) 1994-11-30 1996-06-11 Kyocera Corp X線ミラー
JP3267471B2 (ja) * 1995-08-02 2002-03-18 キヤノン株式会社 マスク、これを用いた露光装置やデバイス生産方法
JP3232232B2 (ja) 1996-02-08 2001-11-26 キヤノン株式会社 X線取り出し窓およびその製造方法ならびに前記x線取り出し窓を用いたx線露光装置
JP3211147B2 (ja) * 1996-05-29 2001-09-25 株式会社荏原製作所 装置の排気構造
JP3255849B2 (ja) * 1996-07-19 2002-02-12 キヤノン株式会社 露光装置
JP3450622B2 (ja) * 1996-07-19 2003-09-29 キヤノン株式会社 露光装置およびこれを用いたデバイス製造方法
US6101237A (en) * 1996-08-28 2000-08-08 Canon Kabushiki Kaisha X-ray mask and X-ray exposure method using the same
JPH10172883A (ja) 1996-12-09 1998-06-26 Sumitomo Heavy Ind Ltd シンクロトロン放射装置及びx線露光装置
JPH10289867A (ja) * 1997-04-11 1998-10-27 Canon Inc X線露光装置およびデバイス製造方法
JPH113858A (ja) * 1997-04-17 1999-01-06 Canon Inc X線光学装置、x線露光装置および半導体デバイス製造方法
US6167111A (en) * 1997-07-02 2000-12-26 Canon Kabushiki Kaisha Exposure apparatus for synchrotron radiation lithography
JPH1126350A (ja) * 1997-07-02 1999-01-29 Canon Inc 露光装置
US6049588A (en) * 1997-07-10 2000-04-11 Focused X-Rays X-ray collimator for lithography
JPH1184098A (ja) * 1997-07-11 1999-03-26 Canon Inc X線照明装置およびx線照明方法、x線露光装置ならびにデバイス製造方法
JPH1138193A (ja) * 1997-07-24 1999-02-12 Canon Inc X線照明光学系とx線露光装置
JPH11233436A (ja) * 1997-12-10 1999-08-27 Canon Inc X線照明装置及び方法、並びにこれを用いたx線露光装置やデバイス製造方法
JP2002093684A (ja) * 2000-09-18 2002-03-29 Canon Inc X線露光装置、x線露光方法、半導体製造装置および微細構造体
JP2002110505A (ja) * 2000-09-27 2002-04-12 Mitsubishi Electric Corp 露光方法、露光装置、x線マスク、レジスト、半導体装置および微細構造体
US6555444B1 (en) * 2002-01-16 2003-04-29 Intel Corporation Device and method for core buildup using a separator
JP2003233201A (ja) * 2002-02-12 2003-08-22 Mitsubishi Electric Corp 露光方法、この露光方法に用いるレジスト、および、この露光方法により製造された半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1114800A (ja) * 1997-06-23 1999-01-22 Nippon Telegr & Teleph Corp <Ntt> X線反射鏡及びx線反射光学系
KR19990029914A (ko) * 1997-09-19 1999-04-26 베히중 알 미소 구조체의 제조방법
JPH11160871A (ja) * 1997-09-19 1999-06-18 Microparts G Fuer Mikrostrukturtechnik Mbh 微小構造体の製造方法

Also Published As

Publication number Publication date
TW454208B (en) 2001-09-11
EP1107293A1 (en) 2001-06-13
JP2000338299A (ja) 2000-12-08
EP1107293A4 (en) 2001-11-28
US6947518B2 (en) 2005-09-20
WO2000074119A1 (fr) 2000-12-07
US20010021239A1 (en) 2001-09-13
KR20010085303A (ko) 2001-09-07

Similar Documents

Publication Publication Date Title
KR100524353B1 (ko) 엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치
SG101453A1 (en) Exposure apparatus, substrate processing unit and lithographic system, and device manufacturing method
KR960008501B1 (en) Image projection method, semiconductor device manufacturing method using the same and projection exposure apparatus for semiconductor device manufacture
SG83821A1 (en) Stage device and exposure apparatus
AU5932500A (en) Extreme ultraviolet soft x-ray projection lithographic method and mask devices
DE59707065D1 (de) Lithographie-belichtungseinrichtung
AU2002246319A8 (en) Exposure device and substrate processing system and device producing method
EP0484179A3 (en) Wafer holding device in an exposure apparatus
EP1502291A4 (en) EXPOSURE SYSTEM AND METHOD FOR MANUFACTURING A DEVICE USING THE SAME
SG40012A1 (en) Projection exposure apparatus and device manufacturing method using the same
DE69727112D1 (de) Elektronenstrahl-Belichtungsgerät und Belichtungsverfahren
IL154504A0 (en) Method of observing exposure condition for exposing semiconductor device and its apparatus and method of manufacturing semiconductor device
KR970002451A (ko) 노광용 마스크 제작장치에 있어서의 주사용 데이타 작성 장치 및 그 작성 방법
IL137863A0 (en) Methods and apparatus for positioning a ct imaging x-ray beam
DE69702641T2 (de) Belichtungssystem und belichtungsgerät für uv-lithographie
DE69225378T2 (de) Röntgenbelichtungsvorrichtung und Verfahren
DE69921223D1 (de) Entwicklungsapparat, Apparate-Einheit und Bilderzeugungsverfahren
DE69908751D1 (de) Röntgenstrahlung-prüfungsvorrichtung enthaltend ein einstellbares röntgenstrahlungsfilter
FR2786399B1 (fr) Appareil d&#39;irradiation par rayons ionisants
GB2368716B (en) Semiconductor device manufacturing system and electron beam exposure apparatus
KR970002479A (ko) 보조 마스크를 이용한 투영 노광장치
DE69913491D1 (de) Röntgenstrahle-erzeugungsgerät und untersuchungsvorrichtung
DE69941381D1 (de) Entwicklungsvorrichtung und Bilderzeugungsgerät
DE60036839D1 (de) Verfahren und Gerät für Projektionsdatenkorrektur und für strahlungstomographische Bilderzeugung
EP0458539A3 (en) X-ray exposure apparatus and a mask usable therewithin

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20030825

Effective date: 20050629

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
GRNT Written decision to grant
G170 Publication of correction
FPAY Annual fee payment

Payment date: 20081010

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee