KR100524353B1 - 엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치 - Google Patents
엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치Info
- Publication number
- KR100524353B1 KR100524353B1 KR10-2001-7001083A KR20017001083A KR100524353B1 KR 100524353 B1 KR100524353 B1 KR 100524353B1 KR 20017001083 A KR20017001083 A KR 20017001083A KR 100524353 B1 KR100524353 B1 KR 100524353B1
- Authority
- KR
- South Korea
- Prior art keywords
- ray
- synchrotron
- semiconductor device
- exposure apparatus
- mirror
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
- G21K5/04—Irradiation devices with beam-forming means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11/149621 | 1999-05-28 | ||
JP11149621A JP2000338299A (ja) | 1999-05-28 | 1999-05-28 | X線露光装置、x線露光方法、x線マスク、x線ミラー、シンクロトロン放射装置、シンクロトロン放射方法および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010085303A KR20010085303A (ko) | 2001-09-07 |
KR100524353B1 true KR100524353B1 (ko) | 2005-11-08 |
Family
ID=15479231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-7001083A KR100524353B1 (ko) | 1999-05-28 | 2001-01-26 | 엑스선 노광장치, 엑스선 노광방법, 엑스선 마스크,엑스선 미러, 싱크로트론 방사장치, 싱크로트론 방사방법및 반도체 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6947518B2 (ko) |
EP (1) | EP1107293A4 (ko) |
JP (1) | JP2000338299A (ko) |
KR (1) | KR100524353B1 (ko) |
TW (1) | TW454208B (ko) |
WO (1) | WO2000074119A1 (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093684A (ja) * | 2000-09-18 | 2002-03-29 | Canon Inc | X線露光装置、x線露光方法、半導体製造装置および微細構造体 |
JP2003163155A (ja) | 2001-11-28 | 2003-06-06 | Mitsubishi Electric Corp | X線露光方法、x線露光装置、微細構造および半導体装置 |
JP2003233201A (ja) | 2002-02-12 | 2003-08-22 | Mitsubishi Electric Corp | 露光方法、この露光方法に用いるレジスト、および、この露光方法により製造された半導体装置 |
JP2004273794A (ja) * | 2003-03-10 | 2004-09-30 | Mitsubishi Electric Corp | X線マスクの製造方法およびそれにより製造されたx線マスクを用いた半導体装置の製造方法 |
US7575404B2 (en) * | 2006-11-01 | 2009-08-18 | Sps Technologies, Llc | Nut plate fastener assembly for composite materials |
EP1953537A1 (de) * | 2007-01-30 | 2008-08-06 | KEMMER, Josef, Dr. | Vorrichtung zur Erfassung und/oder Leitung von Röntgenstrahlung unter Verwendung einer Röntgenoptik |
KR100949141B1 (ko) | 2007-11-06 | 2010-03-25 | 원광대학교산학협력단 | X-선 튜브 광원에서의 특성방사선 획득 장치 |
US7978822B2 (en) * | 2008-01-30 | 2011-07-12 | Reflective X-Ray Optics Llc | Mirror mounting, alignment, and scanning mechanism and scanning method for radiographic X-ray imaging, and X-ray imaging device having same |
US20120085747A1 (en) * | 2010-10-07 | 2012-04-12 | Benson Chao | Heater assembly and wafer processing apparatus using the same |
US9966161B2 (en) * | 2015-09-21 | 2018-05-08 | Uchicago Argonne, Llc | Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics |
KR102035949B1 (ko) * | 2015-09-25 | 2019-10-23 | 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 | X선 현미경 |
US10649209B2 (en) | 2016-07-08 | 2020-05-12 | Daqri Llc | Optical combiner apparatus |
US10804063B2 (en) * | 2016-09-15 | 2020-10-13 | Baker Hughes, A Ge Company, Llc | Multi-layer X-ray source fabrication |
US10481678B2 (en) | 2017-01-11 | 2019-11-19 | Daqri Llc | Interface-based modeling and design of three dimensional spaces using two dimensional representations |
DE102017202312B4 (de) * | 2017-02-14 | 2018-10-04 | Siemens Healthcare Gmbh | Verfahren zur Herstellung eines Röntgen-Streustrahlenrasters |
US11125993B2 (en) | 2018-12-10 | 2021-09-21 | Facebook Technologies, Llc | Optical hyperfocal reflective systems and methods, and augmented reality and/or virtual reality displays incorporating same |
US11221494B2 (en) | 2018-12-10 | 2022-01-11 | Facebook Technologies, Llc | Adaptive viewport optical display systems and methods |
JP2022516730A (ja) | 2019-01-09 | 2022-03-02 | フェイスブック・テクノロジーズ・リミテッド・ライアビリティ・カンパニー | Ar、hmd、およびhud用途向けの光導波路における不均一な副瞳リフレクタおよび方法 |
CN118076920A (zh) | 2021-10-20 | 2024-05-24 | 日本碍子株式会社 | Euv透过膜 |
US11863730B2 (en) | 2021-12-07 | 2024-01-02 | Snap Inc. | Optical waveguide combiner systems and methods |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1114800A (ja) * | 1997-06-23 | 1999-01-22 | Nippon Telegr & Teleph Corp <Ntt> | X線反射鏡及びx線反射光学系 |
KR19990029914A (ko) * | 1997-09-19 | 1999-04-26 | 베히중 알 | 미소 구조체의 제조방법 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110625A (en) * | 1976-12-20 | 1978-08-29 | International Business Machines Corporation | Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays |
JPS5829446Y2 (ja) * | 1978-11-08 | 1983-06-28 | オリンパス光学工業株式会社 | カメラ用鏡筒 |
JPS5571311A (en) | 1978-11-24 | 1980-05-29 | Seiko Instr & Electronics Ltd | Vibrator |
JPS5635109A (en) * | 1979-07-11 | 1981-04-07 | Aga Ab | Mirror |
JPS60220933A (ja) * | 1984-04-18 | 1985-11-05 | Nec Corp | X線露光マスク及びその製造方法 |
JP2770960B2 (ja) * | 1988-10-06 | 1998-07-02 | キヤノン株式会社 | Sor−x線露光装置 |
JPH03120714A (ja) * | 1989-10-04 | 1991-05-22 | Toshiba Corp | X線露光装置 |
US5258091A (en) * | 1990-09-18 | 1993-11-02 | Sumitomo Electric Industries, Ltd. | Method of producing X-ray window |
US5214685A (en) * | 1991-10-08 | 1993-05-25 | Maxwell Laboratories, Inc. | X-ray lithography mirror and method of making same |
JP2995371B2 (ja) | 1992-11-12 | 1999-12-27 | セイコーインスツルメンツ株式会社 | X線反射鏡用材料 |
JPH06194497A (ja) * | 1992-12-24 | 1994-07-15 | Univ Tohoku | Bnを用いた高耐熱性軟x線多層膜反射鏡 |
US5356662A (en) * | 1993-01-05 | 1994-10-18 | At&T Bell Laboratories | Method for repairing an optical element which includes a multilayer coating |
US5374974A (en) * | 1993-04-30 | 1994-12-20 | Lsi Logic Corporation | High speed shuttle for gating a radiation beam, particularly for semiconductor lithography apparatus |
BE1007281A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze. |
US5677939A (en) * | 1994-02-23 | 1997-10-14 | Nikon Corporation | Illuminating apparatus |
US5503958A (en) * | 1994-05-27 | 1996-04-02 | Motorola Inc. | Method for forming a circuit pattern |
US5528364A (en) * | 1994-07-19 | 1996-06-18 | The Regents, University Of California | High resolution EUV monochromator/spectrometer |
JPH08152499A (ja) | 1994-11-30 | 1996-06-11 | Kyocera Corp | X線ミラー |
JP3267471B2 (ja) * | 1995-08-02 | 2002-03-18 | キヤノン株式会社 | マスク、これを用いた露光装置やデバイス生産方法 |
JP3232232B2 (ja) | 1996-02-08 | 2001-11-26 | キヤノン株式会社 | X線取り出し窓およびその製造方法ならびに前記x線取り出し窓を用いたx線露光装置 |
JP3211147B2 (ja) * | 1996-05-29 | 2001-09-25 | 株式会社荏原製作所 | 装置の排気構造 |
JP3255849B2 (ja) * | 1996-07-19 | 2002-02-12 | キヤノン株式会社 | 露光装置 |
JP3450622B2 (ja) * | 1996-07-19 | 2003-09-29 | キヤノン株式会社 | 露光装置およびこれを用いたデバイス製造方法 |
US6101237A (en) * | 1996-08-28 | 2000-08-08 | Canon Kabushiki Kaisha | X-ray mask and X-ray exposure method using the same |
JPH10172883A (ja) | 1996-12-09 | 1998-06-26 | Sumitomo Heavy Ind Ltd | シンクロトロン放射装置及びx線露光装置 |
JPH10289867A (ja) * | 1997-04-11 | 1998-10-27 | Canon Inc | X線露光装置およびデバイス製造方法 |
JPH113858A (ja) * | 1997-04-17 | 1999-01-06 | Canon Inc | X線光学装置、x線露光装置および半導体デバイス製造方法 |
US6167111A (en) * | 1997-07-02 | 2000-12-26 | Canon Kabushiki Kaisha | Exposure apparatus for synchrotron radiation lithography |
JPH1126350A (ja) * | 1997-07-02 | 1999-01-29 | Canon Inc | 露光装置 |
US6049588A (en) * | 1997-07-10 | 2000-04-11 | Focused X-Rays | X-ray collimator for lithography |
JPH1184098A (ja) * | 1997-07-11 | 1999-03-26 | Canon Inc | X線照明装置およびx線照明方法、x線露光装置ならびにデバイス製造方法 |
JPH1138193A (ja) * | 1997-07-24 | 1999-02-12 | Canon Inc | X線照明光学系とx線露光装置 |
JPH11233436A (ja) * | 1997-12-10 | 1999-08-27 | Canon Inc | X線照明装置及び方法、並びにこれを用いたx線露光装置やデバイス製造方法 |
JP2002093684A (ja) * | 2000-09-18 | 2002-03-29 | Canon Inc | X線露光装置、x線露光方法、半導体製造装置および微細構造体 |
JP2002110505A (ja) * | 2000-09-27 | 2002-04-12 | Mitsubishi Electric Corp | 露光方法、露光装置、x線マスク、レジスト、半導体装置および微細構造体 |
US6555444B1 (en) * | 2002-01-16 | 2003-04-29 | Intel Corporation | Device and method for core buildup using a separator |
JP2003233201A (ja) * | 2002-02-12 | 2003-08-22 | Mitsubishi Electric Corp | 露光方法、この露光方法に用いるレジスト、および、この露光方法により製造された半導体装置 |
-
1999
- 1999-05-28 JP JP11149621A patent/JP2000338299A/ja not_active Withdrawn
-
2000
- 2000-05-24 EP EP00929857A patent/EP1107293A4/en not_active Withdrawn
- 2000-05-24 WO PCT/JP2000/003337 patent/WO2000074119A1/ja not_active Application Discontinuation
- 2000-05-26 TW TW089110251A patent/TW454208B/zh not_active IP Right Cessation
-
2001
- 2001-01-26 US US09/769,490 patent/US6947518B2/en not_active Expired - Fee Related
- 2001-01-26 KR KR10-2001-7001083A patent/KR100524353B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1114800A (ja) * | 1997-06-23 | 1999-01-22 | Nippon Telegr & Teleph Corp <Ntt> | X線反射鏡及びx線反射光学系 |
KR19990029914A (ko) * | 1997-09-19 | 1999-04-26 | 베히중 알 | 미소 구조체의 제조방법 |
JPH11160871A (ja) * | 1997-09-19 | 1999-06-18 | Microparts G Fuer Mikrostrukturtechnik Mbh | 微小構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW454208B (en) | 2001-09-11 |
EP1107293A1 (en) | 2001-06-13 |
JP2000338299A (ja) | 2000-12-08 |
EP1107293A4 (en) | 2001-11-28 |
US6947518B2 (en) | 2005-09-20 |
WO2000074119A1 (fr) | 2000-12-07 |
US20010021239A1 (en) | 2001-09-13 |
KR20010085303A (ko) | 2001-09-07 |
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