KR970002479A - 보조 마스크를 이용한 투영 노광장치 - Google Patents

보조 마스크를 이용한 투영 노광장치 Download PDF

Info

Publication number
KR970002479A
KR970002479A KR1019950019039A KR19950019039A KR970002479A KR 970002479 A KR970002479 A KR 970002479A KR 1019950019039 A KR1019950019039 A KR 1019950019039A KR 19950019039 A KR19950019039 A KR 19950019039A KR 970002479 A KR970002479 A KR 970002479A
Authority
KR
South Korea
Prior art keywords
exposure apparatus
projection exposure
auxiliary mask
mask
auxiliary
Prior art date
Application number
KR1019950019039A
Other languages
English (en)
Other versions
KR0183720B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950019039A priority Critical patent/KR0183720B1/ko
Priority to US08/668,904 priority patent/US5726741A/en
Priority to JP17040196A priority patent/JPH09106943A/ja
Publication of KR970002479A publication Critical patent/KR970002479A/ko
Application granted granted Critical
Publication of KR0183720B1 publication Critical patent/KR0183720B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019950019039A 1995-06-30 1995-06-30 보조 마스크를 이용한 투영 노광장치 KR0183720B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950019039A KR0183720B1 (ko) 1995-06-30 1995-06-30 보조 마스크를 이용한 투영 노광장치
US08/668,904 US5726741A (en) 1995-06-30 1996-06-24 Photolithographic projection systems including grating masks and related methods
JP17040196A JPH09106943A (ja) 1995-06-30 1996-06-28 補助マスクを用いた投影露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950019039A KR0183720B1 (ko) 1995-06-30 1995-06-30 보조 마스크를 이용한 투영 노광장치

Publications (2)

Publication Number Publication Date
KR970002479A true KR970002479A (ko) 1997-01-24
KR0183720B1 KR0183720B1 (ko) 1999-04-01

Family

ID=19419438

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950019039A KR0183720B1 (ko) 1995-06-30 1995-06-30 보조 마스크를 이용한 투영 노광장치

Country Status (3)

Country Link
US (1) US5726741A (ko)
JP (1) JPH09106943A (ko)
KR (1) KR0183720B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689836B1 (ko) * 2005-12-23 2007-03-08 삼성전자주식회사 보조 포토 마스크를 갖는 노광장비 및 이를 이용하는노광방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100400283B1 (ko) * 1996-10-28 2003-12-31 주식회사 하이닉스반도체 리소그라피 공정에 이용되는 조명 방법
US5851701A (en) * 1997-04-01 1998-12-22 Micron Technology, Inc. Atom lithographic mask having diffraction grating and attenuated phase shifters
JP3159163B2 (ja) 1998-04-06 2001-04-23 日本電気株式会社 走査露光方法及び走査露光装置
WO2000003296A1 (en) * 1998-07-10 2000-01-20 Ball Semiconductor, Inc. A reflection system for imaging on a nonplanar substrate
JP2002324743A (ja) * 2001-04-24 2002-11-08 Canon Inc 露光方法及び装置
WO2006029796A2 (en) * 2004-09-13 2006-03-23 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
US20070285644A1 (en) * 2004-09-13 2007-12-13 Carl Zeiss Smt Ag Microlithographic Projection Exposure Apparatus
DE102005003183B4 (de) * 2005-01-19 2011-06-16 Qimonda Ag Verfahren zur Herstellung von Halbleiterstrukturen auf einem Wafer
DE102005003185B4 (de) * 2005-01-19 2006-11-02 Infineon Technologies Ag Abbildungssystem und Verfahren zur Herstellung von Halbleiterstrukturen auf einem Wafer durch Abbildung einer Maske auf dem Wafer mit einer Dipolblende
US9763634B2 (en) * 2013-05-22 2017-09-19 Siemens Aktiengesellschaft Phase-contrast X-ray imaging device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5473410A (en) * 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
KR970003593B1 (en) * 1992-09-03 1997-03-20 Samsung Electronics Co Ltd Projection exposure method and device using mask
US5552856A (en) * 1993-06-14 1996-09-03 Nikon Corporation Projection exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689836B1 (ko) * 2005-12-23 2007-03-08 삼성전자주식회사 보조 포토 마스크를 갖는 노광장비 및 이를 이용하는노광방법

Also Published As

Publication number Publication date
JPH09106943A (ja) 1997-04-22
KR0183720B1 (ko) 1999-04-01
US5726741A (en) 1998-03-10

Similar Documents

Publication Publication Date Title
DE69728948D1 (de) Projektionsbelichtungsapparat
DE69424138D1 (de) Projektionsbelichtungsvorrichtung
EP0725296A3 (en) Projection exposure apparatus
DE59707065D1 (de) Lithographie-belichtungseinrichtung
DE59611251D1 (de) Mikrolithographie-Projektionsbelichtungsanlage mit radial-polarisations-drehender optischer Anordnung
DE69321571T2 (de) Projektionsvorrichtung zur Tauchbelichtung
DE69711157T2 (de) Belichtungsapparat
DE69933918D1 (de) Lithographischer Projektionsapparat
DE69703076T2 (de) Lithographischer projektionsapparat zur abtastbelichtung
DE69319078T2 (de) Bildprojektionsapparat
DE69727016D1 (de) Belichtungsapparat
KR970002479A (ko) 보조 마스크를 이용한 투영 노광장치
DE69518298T2 (de) Bildprojektionsvorrichtung
DE69630548D1 (de) Belichtungsvorrichtung
DE69627450T2 (de) Kameramasken
DE69722694D1 (de) Belichtungsapparat
DE69615804T2 (de) Elektronenstrahl-Belichtungsgerät
DE69928328D1 (de) Lithographischer Projektionsapparat
DE69515831T2 (de) Belichtungsapparat
DE69516644D1 (de) Belichtungsapparat
DE69621660T2 (de) Photographisches Belichtungsgerät
DE69904881T2 (de) Projektionsbelichtungsgerät
KR960015340U (ko) 노광마스크
KR960012658U (ko) 노광마스크
DE69620941D1 (de) Photographisches Belichtungsgerät

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20081201

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee