DE69727112D1 - Elektronenstrahl-Belichtungsgerät und Belichtungsverfahren - Google Patents

Elektronenstrahl-Belichtungsgerät und Belichtungsverfahren

Info

Publication number
DE69727112D1
DE69727112D1 DE69727112T DE69727112T DE69727112D1 DE 69727112 D1 DE69727112 D1 DE 69727112D1 DE 69727112 T DE69727112 T DE 69727112T DE 69727112 T DE69727112 T DE 69727112T DE 69727112 D1 DE69727112 D1 DE 69727112D1
Authority
DE
Germany
Prior art keywords
electron beam
exposure
exposure device
exposure method
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69727112T
Other languages
English (en)
Other versions
DE69727112T2 (de
Inventor
Shigeru Terashima
Masato Muraki
Masahiko Okunuki
Akira Miyake
Shin Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28381496A external-priority patent/JP3728031B2/ja
Priority claimed from JP32677096A external-priority patent/JP3689512B2/ja
Priority claimed from JP9018773A external-priority patent/JPH10214777A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69727112D1 publication Critical patent/DE69727112D1/de
Application granted granted Critical
Publication of DE69727112T2 publication Critical patent/DE69727112T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31767—Step and repeat

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69727112T 1996-10-25 1997-10-23 Elektronenstrahl-Belichtungsgerät und Belichtungsverfahren Expired - Lifetime DE69727112T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP28381496 1996-10-25
JP28381496A JP3728031B2 (ja) 1996-10-25 1996-10-25 電子ビーム露光装置及び電子ビーム露光用マスク
JP32677096A JP3689512B2 (ja) 1996-12-06 1996-12-06 電子ビーム露光装置及び該装置を用いたデバイス製造方法
JP32677096 1996-12-06
JP1877397 1997-01-31
JP9018773A JPH10214777A (ja) 1997-01-31 1997-01-31 電子ビーム照明装置及び該装置を備えた電子ビーム露光装置

Publications (2)

Publication Number Publication Date
DE69727112D1 true DE69727112D1 (de) 2004-02-12
DE69727112T2 DE69727112T2 (de) 2004-07-08

Family

ID=27282355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69727112T Expired - Lifetime DE69727112T2 (de) 1996-10-25 1997-10-23 Elektronenstrahl-Belichtungsgerät und Belichtungsverfahren

Country Status (4)

Country Link
US (1) US6225637B1 (de)
EP (1) EP0838837B1 (de)
KR (1) KR100278045B1 (de)
DE (1) DE69727112T2 (de)

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US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP2000003847A (ja) * 1998-06-15 2000-01-07 Canon Inc 荷電粒子線縮小転写装置及びデバイス製造方法
US6429440B1 (en) * 1998-06-16 2002-08-06 Asml Netherlands B.V. Lithography apparatus having a dynamically variable illumination beam
EP0965888B1 (de) * 1998-06-16 2008-06-11 ASML Netherlands B.V. Lithographischer Apparat
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2001085303A (ja) * 1999-09-10 2001-03-30 Toshiba Corp 荷電ビーム露光装置及び荷電ビーム露光方法
KR100761391B1 (ko) * 2001-06-30 2007-10-04 주식회사 하이닉스반도체 노광 장치의 플레어 노이즈 제거방법
US6903355B2 (en) * 2002-06-26 2005-06-07 Advantest Corporation Electron beam exposure apparatus, electron beam method, semiconductor device manufacturing method, mask, and mask manufacturing method
JP4180854B2 (ja) * 2002-07-16 2008-11-12 キヤノン株式会社 電子ビーム描画装置
KR100969056B1 (ko) * 2002-11-21 2010-07-09 칼 짜이스 에스엠티 아게 마이크로 리도그라피를 위한 투사 렌즈
JP4564929B2 (ja) * 2006-02-21 2010-10-20 キヤノン株式会社 ３次元フォトニック結晶の形成方法
JP2011199279A (ja) * 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
JP5554620B2 (ja) * 2010-04-14 2014-07-23 株式会社ニューフレアテクノロジー 描画装置、描画方法および描画装置の異常診断方法
EP2757571B1 (de) * 2013-01-17 2017-09-20 IMS Nanofabrication AG Hochspannungsisolationsvorrichtung für eine optische Vorrichtung mit geladenen Partikeln
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (de) 2013-07-25 2016-05-04 IMS Nanofabrication AG Verfahren zur Ladungsteilchen-Mehrstrahlbelichtung
EP2913838B1 (de) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Kompensation defekter Beamlets in einem Ladungsträger-Mehrstrahlbelichtungswerkzeug
EP2937889B1 (de) 2014-04-25 2017-02-15 IMS Nanofabrication AG Mehrstrahliges werkzeug zum schneiden von mustern
EP2950325B1 (de) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Kompensation von dosisinhomogenität mittels überlappender belichtungsorte
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (de) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bidirektionales mehrstrahliges schreiben mit doppeldurchgang
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10295911B2 (en) * 2016-05-19 2019-05-21 Nikon Corporation Extreme ultraviolet lithography system that utilizes pattern stitching
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393312A (en) 1976-02-05 1983-07-12 Bell Telephone Laboratories, Incorporated Variable-spot scanning in an electron beam exposure system
NL8602196A (nl) 1986-08-29 1988-03-16 Philips Nv Geladen deeltjes bestralingsapparaat met optisch vervormbaar bundel begrenzend diafragma.
JPH0793253B2 (ja) 1986-10-31 1995-10-09 株式会社東芝 荷電ビ−ム露光装置
GB2197751A (en) 1986-11-24 1988-05-25 Philips Electronic Associated Variable shaped spot electron beam pattern generator
AT393925B (de) 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
ATE171812T1 (de) 1988-06-01 1998-10-15 Ims Ionen Mikrofab Syst Ionenstrahllithographie
JP2680074B2 (ja) 1988-10-24 1997-11-19 富士通株式会社 荷電粒子ビーム露光を用いた半導体装置の製造方法
US5079112A (en) 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
JPH0399419A (ja) 1989-09-12 1991-04-24 Mitsubishi Electric Corp 電子ビーム描画装置
JPH03185400A (ja) * 1989-12-15 1991-08-13 Seiko Epson Corp Ｘ線源
US5227269A (en) 1990-06-22 1993-07-13 Texas Instruments Incorporated Method for fabricating high density DRAM reticles
US5250812A (en) * 1991-03-29 1993-10-05 Hitachi, Ltd. Electron beam lithography using an aperture having an array of repeated unit patterns
JP2706192B2 (ja) 1991-11-06 1998-01-28 富士通株式会社 電子ビーム露光装置
US5528048A (en) 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
US5624774A (en) 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam
JP3378413B2 (ja) 1994-09-16 2003-02-17 株式会社東芝 電子線描画装置及び電子線描画方法
US5854490A (en) * 1995-10-03 1998-12-29 Fujitsu Limited Charged-particle-beam exposure device and charged-particle-beam exposure method
JP2785788B2 (ja) * 1996-01-19 1998-08-13 日本電気株式会社 一括マスク搭載ホルダ構造
US5751004A (en) * 1997-01-24 1998-05-12 International Business Machines Corporation Projection reticle transmission control for coulomb interaction analysis

Also Published As

Publication number Publication date
EP0838837B1 (de) 2004-01-07
EP0838837A2 (de) 1998-04-29
US6225637B1 (en) 2001-05-01
KR19980033184A (ko) 1998-07-25
KR100278045B1 (ko) 2001-01-15
EP0838837A3 (de) 2000-03-08
DE69727112T2 (de) 2004-07-08

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Legal Events

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