ATE171812T1 - Ionenstrahllithographie - Google Patents

Ionenstrahllithographie

Info

Publication number
ATE171812T1
ATE171812T1 AT89109553T AT89109553T ATE171812T1 AT E171812 T1 ATE171812 T1 AT E171812T1 AT 89109553 T AT89109553 T AT 89109553T AT 89109553 T AT89109553 T AT 89109553T AT E171812 T1 ATE171812 T1 AT E171812T1
Authority
AT
Austria
Prior art keywords
lens
field
ion beam
beam lithography
wafer
Prior art date
Application number
AT89109553T
Other languages
English (en)
Inventor
Gerhard Dr Stengl
Hilton F Dr Glavish
Original Assignee
Ims Ionen Mikrofab Syst
Oesterr Investitionskredit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP88890133A external-priority patent/EP0294363B1/de
Priority claimed from US07/226,275 external-priority patent/US4985634A/en
Application filed by Ims Ionen Mikrofab Syst, Oesterr Investitionskredit filed Critical Ims Ionen Mikrofab Syst
Application granted granted Critical
Publication of ATE171812T1 publication Critical patent/ATE171812T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04928—Telecentric systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1207—Einzel lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Polymerisation Methods In General (AREA)
AT89109553T 1988-06-01 1989-05-26 Ionenstrahllithographie ATE171812T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP88890133A EP0294363B1 (de) 1987-06-02 1988-06-01 Anordnung und Verfahren zum Positionieren der Abbildung der auf einer Maske befindlichen Struktur auf ein Substrat
US07/201,959 US4967088A (en) 1987-06-02 1988-06-02 Method and apparatus for image alignment in ion lithography
US07/226,275 US4985634A (en) 1988-06-02 1988-07-29 Ion beam lithography

Publications (1)

Publication Number Publication Date
ATE171812T1 true ATE171812T1 (de) 1998-10-15

Family

ID=27231882

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89109553T ATE171812T1 (de) 1988-06-01 1989-05-26 Ionenstrahllithographie

Country Status (3)

Country Link
EP (1) EP0344646B1 (de)
AT (1) ATE171812T1 (de)
DE (1) DE68928821D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041731A (en) * 1989-01-20 1991-08-20 Fujitsu Limited Deflection compensating device for converging lens
EP0523033A1 (de) * 1991-07-10 1993-01-13 IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. Ionenoptisches Abbildungssystem
EP0528785A1 (de) * 1991-08-20 1993-02-24 IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. Ionenoptisches Abbildungssystem
EP0564438A1 (de) * 1992-03-30 1993-10-06 IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. Teilchen-, insbes. ionenoptisches Abbildungssystem
US5382498A (en) * 1992-12-16 1995-01-17 At&T Corp. Processes for electron lithography
WO1995019637A1 (de) * 1994-01-13 1995-07-20 Ims Ionen Mikrofabrikations Systeme Gesellschaft Mbh Teilchen-, insbesondere ionenoptisches abbildungssystem
JPH08274020A (ja) * 1995-02-13 1996-10-18 Ims Ionen Mikrofab Syst Gmbh 荷電粒子による投影リソグラフィー装置
US6225637B1 (en) * 1996-10-25 2001-05-01 Canon Kabushiki Kaisha Electron beam exposure apparatus
GB2341720A (en) * 1998-09-16 2000-03-22 Leica Microsys Lithography Ltd Electron beam aperture element with beam sheilding
US6661015B2 (en) * 2000-09-15 2003-12-09 Ims-Ionen Mikrofabrikations Systeme Gmbh Pattern lock system
US6852988B2 (en) * 2000-11-28 2005-02-08 Sumitomo Heavy Industries, Ltd. Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects
JP2005116731A (ja) * 2003-10-07 2005-04-28 Hitachi High-Technologies Corp 電子ビーム描画装置及び電子ビーム描画方法
TWI672553B (zh) * 2017-07-31 2019-09-21 大立光電股份有限公司 投影鏡頭系統、投影裝置、感測模組及電子裝置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT391771B (de) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind

Also Published As

Publication number Publication date
EP0344646A2 (de) 1989-12-06
EP0344646B1 (de) 1998-09-30
DE68928821D1 (de) 1998-11-05
EP0344646A3 (de) 1991-04-17

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee