DE69615804D1 - Elektronenstrahl-Belichtungsgerät - Google Patents

Elektronenstrahl-Belichtungsgerät

Info

Publication number
DE69615804D1
DE69615804D1 DE69615804T DE69615804T DE69615804D1 DE 69615804 D1 DE69615804 D1 DE 69615804D1 DE 69615804 T DE69615804 T DE 69615804T DE 69615804 T DE69615804 T DE 69615804T DE 69615804 D1 DE69615804 D1 DE 69615804D1
Authority
DE
Germany
Prior art keywords
electron beam
exposure device
beam exposure
electron
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69615804T
Other languages
English (en)
Other versions
DE69615804T2 (de
Inventor
Naoaki Aizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69615804D1 publication Critical patent/DE69615804D1/de
Application granted granted Critical
Publication of DE69615804T2 publication Critical patent/DE69615804T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69615804T 1995-12-21 1996-11-07 Elektronenstrahl-Belichtungsgerät Expired - Fee Related DE69615804T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7333094A JP3033484B2 (ja) 1995-12-21 1995-12-21 電子線露光装置

Publications (2)

Publication Number Publication Date
DE69615804D1 true DE69615804D1 (de) 2001-11-15
DE69615804T2 DE69615804T2 (de) 2002-06-13

Family

ID=18262216

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615804T Expired - Fee Related DE69615804T2 (de) 1995-12-21 1996-11-07 Elektronenstrahl-Belichtungsgerät

Country Status (4)

Country Link
US (1) US6091202A (de)
EP (1) EP0780879B1 (de)
JP (1) JP3033484B2 (de)
DE (1) DE69615804T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498349B1 (en) 1997-02-05 2002-12-24 Ut-Battelle Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy
US5892231A (en) * 1997-02-05 1999-04-06 Lockheed Martin Energy Research Corporation Virtual mask digital electron beam lithography
WO2000067291A2 (en) * 1999-05-03 2000-11-09 Etec Systems, Inc. Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
DE60134718D1 (de) * 2001-04-09 2008-08-21 Integrated Circuit Testing Vorrichtung und Verfahren zur Kontrolle von fokussierten Elektronenstrahlen
US6818887B2 (en) * 2002-11-25 2004-11-16 DRäGERWERK AKTIENGESELLSCHAFT Reflector for a time-of-flight mass spectrometer
EP1426997A1 (de) 2002-12-06 2004-06-09 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Feldemissionsstrahlenquelle und Strahlstromsteuerverfahren
FR2864695B1 (fr) * 2003-12-30 2006-03-10 Commissariat Energie Atomique Dispositif d'emission electronique multifaisceaux hybride a divergence controlee.
EP1702345A2 (de) * 2003-12-30 2006-09-20 Commissariat à l'Energie Atomique Divergenzgesteuerte hybride mehrfach-elektronenstrahl-emissionseinrichtung
DE102021115731B3 (de) 2021-06-17 2021-11-25 scia Systems GmbH Ladungsträgererzeugungsquelle

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119185A (en) 1976-03-31 1977-10-06 Fujitsu Ltd Electron beam exposure equipment
JPS5698827A (en) * 1979-01-04 1981-08-08 Nippon Telegr & Teleph Corp <Ntt> Electron beam exposure device
US4438557A (en) * 1979-05-01 1984-03-27 Woodland International Corporation Method of using an areal array of tubular electron sources
JPS57187849A (en) * 1981-05-15 1982-11-18 Nippon Telegr & Teleph Corp <Ntt> Electron gun
DE3851083T2 (de) * 1987-04-28 1995-01-12 Canon Kk Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl.
FR2641412B1 (fr) * 1988-12-30 1991-02-15 Thomson Tubes Electroniques Source d'electrons du type a emission de champ
US5144142A (en) * 1989-05-19 1992-09-01 Fujitsu Limited Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method
DE69025831T2 (de) * 1989-09-07 1996-09-19 Canon Kk Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.
EP0440463B1 (de) * 1990-02-01 1996-03-27 Mitsubishi Denki Kabushiki Kaisha Flaches Anzeigegerät
JPH04179116A (ja) * 1990-11-09 1992-06-25 Hitachi Ltd 荷電粒子線装置
JP3145491B2 (ja) * 1992-01-31 2001-03-12 富士通株式会社 電子ビーム装置
JP3238487B2 (ja) * 1991-11-14 2001-12-17 富士通株式会社 電子ビーム装置
US5191217A (en) * 1991-11-25 1993-03-02 Motorola, Inc. Method and apparatus for field emission device electrostatic electron beam focussing
US5378962A (en) * 1992-05-29 1995-01-03 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for a high resolution, flat panel cathodoluminescent display device
JPH06181172A (ja) * 1992-12-14 1994-06-28 Matsushita Electric Ind Co Ltd 電子ビーム露光装置及びその露光方法
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
JP2595882B2 (ja) * 1993-11-29 1997-04-02 日本電気株式会社 電子線露光装置
JPH08315721A (ja) * 1995-05-19 1996-11-29 Nec Kansai Ltd 電界放出冷陰極
US5763987A (en) * 1995-05-30 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Field emission type electron source and method of making same
US5637951A (en) * 1995-08-10 1997-06-10 Ion Diagnostics, Inc. Electron source for multibeam electron lithography system
JP3296398B2 (ja) * 1995-09-07 2002-06-24 株式会社東芝 電界放出型冷陰極装置およびその製造方法

Also Published As

Publication number Publication date
JP3033484B2 (ja) 2000-04-17
US6091202A (en) 2000-07-18
JPH09171794A (ja) 1997-06-30
EP0780879A3 (de) 1998-01-07
EP0780879B1 (de) 2001-10-10
EP0780879A2 (de) 1997-06-25
DE69615804T2 (de) 2002-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee