DE69213146D1 - Elektronenstrahl-Lithographiegerät - Google Patents

Elektronenstrahl-Lithographiegerät

Info

Publication number
DE69213146D1
DE69213146D1 DE69213146T DE69213146T DE69213146D1 DE 69213146 D1 DE69213146 D1 DE 69213146D1 DE 69213146 T DE69213146 T DE 69213146T DE 69213146 T DE69213146 T DE 69213146T DE 69213146 D1 DE69213146 D1 DE 69213146D1
Authority
DE
Germany
Prior art keywords
electron beam
beam lithography
lithography device
electron
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69213146T
Other languages
English (en)
Other versions
DE69213146T2 (de
Inventor
Hiroyuki Itoh
Minoru Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17110237&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69213146(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69213146D1 publication Critical patent/DE69213146D1/de
Publication of DE69213146T2 publication Critical patent/DE69213146T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69213146T 1991-09-25 1992-09-23 Elektronenstrahl-Lithographiegerät Expired - Lifetime DE69213146T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3243872A JP2788139B2 (ja) 1991-09-25 1991-09-25 電子線描画装置

Publications (2)

Publication Number Publication Date
DE69213146D1 true DE69213146D1 (de) 1996-10-02
DE69213146T2 DE69213146T2 (de) 1997-02-20

Family

ID=17110237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69213146T Expired - Lifetime DE69213146T2 (de) 1991-09-25 1992-09-23 Elektronenstrahl-Lithographiegerät

Country Status (4)

Country Link
US (1) US5315123A (de)
EP (1) EP0534404B1 (de)
JP (1) JP2788139B2 (de)
DE (1) DE69213146T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3221797B2 (ja) * 1994-06-14 2001-10-22 株式会社日立製作所 試料作成方法及びその装置
JP3491106B2 (ja) * 1994-12-14 2004-01-26 株式会社ニコン 位置検出装置、位置合せ装置及び位置測定方法
JP3455005B2 (ja) * 1996-03-25 2003-10-06 株式会社東芝 荷電ビーム露光装置
JP2000133567A (ja) 1998-10-23 2000-05-12 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
JP3946899B2 (ja) * 1999-03-26 2007-07-18 株式会社東芝 エネルギービーム装置における光学系の調整方法
US6781680B1 (en) 1999-03-26 2004-08-24 Kabushiki Kaisha Toshiba Optical system adjusting method for energy beam apparatus
US6437347B1 (en) 1999-04-13 2002-08-20 International Business Machines Corporation Target locking system for electron beam lithography
US6291819B1 (en) 1999-09-09 2001-09-18 International Business Machines Corporation Method of calibrating an electron beam system for lithography
JP2001168013A (ja) 1999-12-10 2001-06-22 Nec Corp 電子線露光方法
AU2002320188A1 (en) * 2001-01-26 2003-01-21 Fei Company Method and apparatus for scanned instrument calibration
JP2003323720A (ja) * 2002-05-07 2003-11-14 Sanyo Electric Co Ltd 信号処理装置
JP4737968B2 (ja) * 2004-10-13 2011-08-03 株式会社東芝 補正装置、補正方法、補正プログラム及び半導体装置の製造方法
US7511816B2 (en) * 2005-06-16 2009-03-31 Kla-Tencor Technologies Corp. Methods and systems for determining drift in a position of a light beam with respect to a chuck
JP4520426B2 (ja) 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
US7456414B2 (en) * 2005-09-28 2008-11-25 Applied Materials, Inc. Beam re-registration system and method
JP5959139B2 (ja) 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを分析する方法
JP5266236B2 (ja) 2006-10-20 2013-08-21 エフ・イ−・アイ・カンパニー サンプル抽出および取り扱いのための方法および装置
US7880151B2 (en) * 2008-02-28 2011-02-01 Fei Company Beam positioning for beam processing
JP2009218474A (ja) * 2008-03-12 2009-09-24 Jeol Ltd ビーム位置ドリフト抑制方法、ビーム寸法ドリフト抑制方法及び荷電粒子ビーム描画装置。
CN102209609B (zh) * 2008-09-09 2013-12-25 康奈尔大学 晶圆级纳米计量系统、用于感测加工元件位置的方法
EP2610889A3 (de) 2011-12-27 2015-05-06 Fei Company Kontrolle der Drift in einem Strahlsystem geladener Teilchen
JP6114002B2 (ja) * 2012-11-01 2017-04-12 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6322011B2 (ja) * 2014-03-19 2018-05-09 株式会社ニューフレアテクノロジー 荷電粒子ビームのドリフト補正方法及び荷電粒子ビーム描画装置
EP3258479B1 (de) * 2016-06-13 2019-05-15 IMS Nanofabrication GmbH Verfahren zur kompensation von durch variation von musterbelichtungsdichte verursachten musterplatzierungsfehlern in einem mehrstrahlenschreiber
DE102018209562B3 (de) 2018-06-14 2019-12-12 Carl Zeiss Smt Gmbh Vorrichtungen und Verfahren zur Untersuchung und/oder Bearbeitung eines Elements für die Photolithographie

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56124234A (en) * 1980-03-05 1981-09-29 Hitachi Ltd Correcting method for electron beam deflection
JPS57208132A (en) * 1981-06-17 1982-12-21 Toshiba Corp Electron-beam exposure apparatus
JPS5946026A (ja) * 1982-09-09 1984-03-15 Toshiba Corp 試料位置測定方法
JPS5961134A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 荷電ビ−ム露光装置
US4698509A (en) * 1985-02-14 1987-10-06 Varian Associates, Inc. High speed pattern generator for electron beam lithography
JPS6229135A (ja) * 1985-07-29 1987-02-07 Advantest Corp 荷電粒子ビ−ム露光方法及びこの方法を用いた荷電粒子ビ−ム露光装置
JPS63308317A (ja) * 1987-06-10 1988-12-15 Nec Corp 荷電ビ−ム露光装置
JPH01102929A (ja) * 1987-10-16 1989-04-20 Hitachi Ltd 電子線描画装置
JPH01286420A (ja) * 1988-05-13 1989-11-17 Jeol Ltd ステージ位置制御装置
JPH0722010B2 (ja) * 1989-09-28 1995-03-08 株式会社日立製作所 電子線描画装置
JPH0779075B2 (ja) * 1990-02-21 1995-08-23 株式会社東芝 電子ビーム露光装置

Also Published As

Publication number Publication date
JP2788139B2 (ja) 1998-08-20
EP0534404B1 (de) 1996-08-28
EP0534404A1 (de) 1993-03-31
DE69213146T2 (de) 1997-02-20
JPH0582426A (ja) 1993-04-02
US5315123A (en) 1994-05-24

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