DE69622009D1 - Ionenstrahlgerät - Google Patents

Ionenstrahlgerät

Info

Publication number
DE69622009D1
DE69622009D1 DE69622009T DE69622009T DE69622009D1 DE 69622009 D1 DE69622009 D1 DE 69622009D1 DE 69622009 T DE69622009 T DE 69622009T DE 69622009 T DE69622009 T DE 69622009T DE 69622009 D1 DE69622009 D1 DE 69622009D1
Authority
DE
Germany
Prior art keywords
ion beam
beam device
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622009T
Other languages
English (en)
Other versions
DE69622009T2 (de
Inventor
Richard Burgin
David Loome
Simon Povall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69622009D1 publication Critical patent/DE69622009D1/de
Application granted granted Critical
Publication of DE69622009T2 publication Critical patent/DE69622009T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69622009T 1995-07-21 1996-07-19 Ionenstrahlgerät Expired - Lifetime DE69622009T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9515090.0A GB9515090D0 (en) 1995-07-21 1995-07-21 An ion beam apparatus
PCT/GB1996/001715 WO1997004474A1 (en) 1995-07-21 1996-07-19 An ion beam apparatus

Publications (2)

Publication Number Publication Date
DE69622009D1 true DE69622009D1 (de) 2002-08-01
DE69622009T2 DE69622009T2 (de) 2003-01-16

Family

ID=10778135

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69622009T Expired - Lifetime DE69622009T2 (de) 1995-07-21 1996-07-19 Ionenstrahlgerät
DE69637765T Expired - Lifetime DE69637765D1 (de) 1995-07-21 1996-07-19 Ionenstrahlgerät

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69637765T Expired - Lifetime DE69637765D1 (de) 1995-07-21 1996-07-19 Ionenstrahlgerät

Country Status (7)

Country Link
US (1) US5920076A (de)
EP (2) EP1178517B1 (de)
JP (1) JPH10508425A (de)
KR (1) KR970706598A (de)
DE (2) DE69622009T2 (de)
GB (1) GB9515090D0 (de)
WO (1) WO1997004474A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
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US5200072A (en) 1990-08-16 1993-04-06 Ahlstrom Screen Plates Inc. Screen plates and methods of manufacture
US6207964B1 (en) * 1999-02-19 2001-03-27 Axcelis Technologies, Inc. Continuously variable aperture for high-energy ion implanter
EP1105908B1 (de) * 1999-06-23 2005-03-02 Applied Materials, Inc. Vorrichtung zur erzeugung von ionenstrahlen
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US7196782B2 (en) 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6793766B2 (en) * 2001-01-04 2004-09-21 Applied Materials Inc. Apparatus having platforms positioned for precise centering of semiconductor wafers during processing
US6300177B1 (en) * 2001-01-25 2001-10-09 Chartered Semiconductor Manufacturing Inc. Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials
GB0131097D0 (en) * 2001-12-31 2002-02-13 Applied Materials Inc Ion sources
GB2386247B (en) * 2002-01-11 2005-09-07 Applied Materials Inc Ion beam generator
EP1695038B1 (de) 2003-12-12 2013-02-13 Semequip, Inc. Steuerung des flusses von aus feststoffen sublimierten dämpfen
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
US7102139B2 (en) * 2005-01-27 2006-09-05 Varian Semiconductor Equipment Associates, Inc. Source arc chamber for ion implanter having repeller electrode mounted to external insulator
US8089052B2 (en) * 2008-04-24 2012-01-03 Axcelis Technologies, Inc. Ion source with adjustable aperture
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US7842931B2 (en) * 2008-09-25 2010-11-30 Axcelis Technologies, Inc. Extraction electrode manipulator
US8466431B2 (en) 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
US8044374B2 (en) * 2009-06-30 2011-10-25 Twin Creeks Technologies, Inc. Ion implantation apparatus
CN102347191A (zh) * 2010-08-02 2012-02-08 北京中科信电子装备有限公司 一种分体式离子源引出电极系统
US9499921B2 (en) * 2012-07-30 2016-11-22 Rayton Solar Inc. Float zone silicon wafer manufacturing system and related process
JP6076838B2 (ja) * 2013-05-31 2017-02-08 住友重機械イオンテクノロジー株式会社 絶縁構造及び絶縁方法
US10221476B2 (en) * 2013-06-03 2019-03-05 Varian Semiconductor Equipment Associates, Inc. Coating insulating materials for improved life
CN108962708A (zh) * 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
JP6253362B2 (ja) * 2013-11-21 2017-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法
US9496117B2 (en) * 2014-01-20 2016-11-15 Varian Semiconductor Equipment Associates, Inc. Two-dimensional mass resolving slit mechanism for semiconductor processing systems
US9793094B2 (en) * 2014-03-24 2017-10-17 Ion Technology Solutions, Llc Extraction electrode
US9748072B2 (en) * 2014-06-23 2017-08-29 Advanced Ion Beam Technology, Inc. Lower dose rate ion implantation using a wider ion beam
US9318302B1 (en) * 2015-03-31 2016-04-19 Axcelis Technologies, Inc. Integrated extraction electrode manipulator for ion source
US11017974B2 (en) * 2016-11-11 2021-05-25 Nissin Ion Equipment Co., Ltd. Ion source
KR20210094104A (ko) 2018-12-17 2021-07-28 어플라이드 머티어리얼스, 인코포레이티드 경사 격자들의 롤링 k 벡터들의 조절
EP4169053A1 (de) * 2020-06-22 2023-04-26 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Ionenstrahl-extraktionsvorrichtung und verfahren zur erzeugung eines ionenstrahls
JP7065162B2 (ja) * 2020-09-30 2022-05-11 住友重機械工業株式会社 イオン源装置
US20240145206A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Temperature controlled electrode to limit deposition rates and distortion

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1502935A (en) * 1976-05-13 1978-03-08 Hitachi Ltd Microwave discharge ion source
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
US4166952A (en) * 1978-02-24 1979-09-04 E. I. Du Pont De Nemours And Company Method and apparatus for the elemental analysis of solids
JPS55104057A (en) * 1979-02-02 1980-08-09 Hitachi Ltd Ion implantation device
JPS59165359A (ja) * 1983-03-11 1984-09-18 Hitachi Ltd イオン打込装置
JPH0727766B2 (ja) * 1983-08-15 1995-03-29 アプライド マテリアルズ インコーポレーテッド イオン打込み装置及びイオン源装置作動方法
US4580058A (en) * 1984-03-29 1986-04-01 Zymet, Inc. Scanning treatment apparatus
US4843563A (en) * 1985-03-25 1989-06-27 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus
JPS61287229A (ja) * 1985-06-14 1986-12-17 Nippon Kogaku Kk <Nikon> 露光装置、及び該露光装置を用いた回路パターン製造方法
EP0217616A3 (de) * 1985-09-23 1989-01-25 Vg Instruments Group Limited Gerät zur Bearbeitung von Substraten
JPS62272444A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd イオン注入用タ−ゲツト機構
DE3803355A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage
EP0339554A3 (de) * 1988-04-26 1989-12-20 Hauzer Holding B.V. Hochfrequenz-Ionenstrahlquelle
EP0342933B1 (de) * 1988-05-18 1996-09-18 Varian Associates, Inc. Gerät zur Abrasterung einer Tragplatte in einer Schub-Ionen-Implantierungsanlage
US4873467A (en) * 1988-05-23 1989-10-10 Kaufman Harold R Ion source with particular grid assembly
JPH0635363Y2 (ja) * 1988-08-22 1994-09-14 日新電機株式会社 イオン源
JPH0257549U (de) * 1988-10-20 1990-04-25
US5229607A (en) * 1990-04-19 1993-07-20 Hitachi, Ltd. Combination apparatus having a scanning electron microscope therein
JPH0443542A (ja) * 1990-06-11 1992-02-13 Fujitsu Ltd 粒子ビーム照射装置
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
JPH0451448A (ja) * 1990-06-20 1992-02-19 Hitachi Nakaseiki Ltd 電子ビーム用絞り板の汚染除去ならびにコーテングのための装置と方法
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
JP2965739B2 (ja) * 1991-03-28 1999-10-18 大日本印刷株式会社 集束イオンビーム装置
EP0515352A1 (de) * 1991-05-24 1992-11-25 IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. Ionenquelle
US5198677A (en) * 1991-10-11 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Production of N+ ions from a multicusp ion beam apparatus
JPH06231723A (ja) * 1993-01-31 1994-08-19 Sony Corp イオン注入装置
JPH06231724A (ja) * 1993-02-02 1994-08-19 Nissin Electric Co Ltd イオン注入装置
US5420415A (en) * 1994-06-29 1995-05-30 Eaton Corporation Structure for alignment of an ion source aperture with a predetermined ion beam path

Also Published As

Publication number Publication date
JPH10508425A (ja) 1998-08-18
DE69637765D1 (de) 2009-01-08
DE69622009T2 (de) 2003-01-16
US5920076A (en) 1999-07-06
EP1178517A1 (de) 2002-02-06
KR970706598A (ko) 1997-11-03
EP0782763A1 (de) 1997-07-09
EP1178517B1 (de) 2008-11-26
WO1997004474A1 (en) 1997-02-06
EP0782763B1 (de) 2002-06-26
GB9515090D0 (en) 1995-09-20

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Legal Events

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8364 No opposition during term of opposition