DE69021025D1 - Elektronenstrahl-Belichtungsverfahren und Gerät hierfür. - Google Patents

Elektronenstrahl-Belichtungsverfahren und Gerät hierfür.

Info

Publication number
DE69021025D1
DE69021025D1 DE69021025T DE69021025T DE69021025D1 DE 69021025 D1 DE69021025 D1 DE 69021025D1 DE 69021025 T DE69021025 T DE 69021025T DE 69021025 T DE69021025 T DE 69021025T DE 69021025 D1 DE69021025 D1 DE 69021025D1
Authority
DE
Germany
Prior art keywords
electron beam
exposure method
beam exposure
device therefor
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021025T
Other languages
English (en)
Other versions
DE69021025T2 (de
Inventor
Toshiyuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69021025D1 publication Critical patent/DE69021025D1/de
Application granted granted Critical
Publication of DE69021025T2 publication Critical patent/DE69021025T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69021025T 1989-12-12 1990-12-12 Elektronenstrahl-Belichtungsverfahren und Gerät hierfür. Expired - Fee Related DE69021025T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1322225A JPH0744145B2 (ja) 1989-12-12 1989-12-12 電子ビーム露光方法及びその装置

Publications (2)

Publication Number Publication Date
DE69021025D1 true DE69021025D1 (de) 1995-08-24
DE69021025T2 DE69021025T2 (de) 1996-01-25

Family

ID=18141336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021025T Expired - Fee Related DE69021025T2 (de) 1989-12-12 1990-12-12 Elektronenstrahl-Belichtungsverfahren und Gerät hierfür.

Country Status (5)

Country Link
US (1) US5177367A (de)
EP (1) EP0432749B1 (de)
JP (1) JPH0744145B2 (de)
KR (1) KR940010150B1 (de)
DE (1) DE69021025T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624774A (en) * 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam
US5449916A (en) * 1994-09-09 1995-09-12 Atomic Energy Of Canada Limited Electron radiation dose tailoring by variable beam pulse generation
CA2159531A1 (en) * 1995-09-29 1997-03-30 Courtland B. Lawrence Method for monitoring absorbed dose in an electron beam
US5798523A (en) * 1996-07-19 1998-08-25 Theratechnologies Inc. Irradiating apparatus using a scanning light source for photodynamic treatment
JP3394453B2 (ja) * 1998-08-05 2003-04-07 日本電気株式会社 電子ビーム露光方法
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835921A (ja) * 1981-08-28 1983-03-02 Toshiba Corp 電子ビ−ム描画装置
JPS58130522A (ja) * 1982-01-28 1983-08-04 Toshiba Corp 電子ビ−ム露光装置
JPS58130523A (ja) * 1982-01-28 1983-08-04 Toshiba Corp 電子ビ−ム露光装置
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
US4463265A (en) * 1982-06-17 1984-07-31 Hewlett-Packard Company Electron beam proximity effect correction by reverse field pattern exposure
JPS5922325A (ja) * 1982-07-29 1984-02-04 Toshiba Corp 電子ビ−ム描画装置
JPS6358829A (ja) * 1986-08-29 1988-03-14 Toshiba Corp 電子線ビ−ムによるパタ−ン形成方法

Also Published As

Publication number Publication date
EP0432749A2 (de) 1991-06-19
DE69021025T2 (de) 1996-01-25
KR910013435A (ko) 1991-08-08
JPH0744145B2 (ja) 1995-05-15
EP0432749B1 (de) 1995-07-19
JPH03183118A (ja) 1991-08-09
EP0432749A3 (en) 1991-10-30
US5177367A (en) 1993-01-05
KR940010150B1 (ko) 1994-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee