DE69023023T2 - Röntgenstrahl-Maskenstruktur und Röntgenstrahl-Belichtungsverfahren. - Google Patents

Röntgenstrahl-Maskenstruktur und Röntgenstrahl-Belichtungsverfahren.

Info

Publication number
DE69023023T2
DE69023023T2 DE69023023T DE69023023T DE69023023T2 DE 69023023 T2 DE69023023 T2 DE 69023023T2 DE 69023023 T DE69023023 T DE 69023023T DE 69023023 T DE69023023 T DE 69023023T DE 69023023 T2 DE69023023 T2 DE 69023023T2
Authority
DE
Germany
Prior art keywords
ray
exposure process
mask structure
ray exposure
ray mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023023T
Other languages
English (en)
Other versions
DE69023023D1 (de
Inventor
Tsutomu Ikeda
Masao Sugata
Hideo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4111090A external-priority patent/JP2684105B2/ja
Priority claimed from JP2047238A external-priority patent/JPH0316116A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69023023D1 publication Critical patent/DE69023023D1/de
Publication of DE69023023T2 publication Critical patent/DE69023023T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69023023T 1989-03-09 1990-03-09 Röntgenstrahl-Maskenstruktur und Röntgenstrahl-Belichtungsverfahren. Expired - Fee Related DE69023023T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5503189 1989-03-09
JP4111090A JP2684105B2 (ja) 1990-02-23 1990-02-23 Ｘ線マスク構造体及びそれを用いたｘ線露光方法
JP2047238A JPH0316116A (ja) 1989-03-09 1990-03-01 Ｘ線リソグラフィー用マスク構造体及びそれを用いたｘ線露光方法

Publications (2)

Publication Number Publication Date
DE69023023D1 DE69023023D1 (de) 1995-11-23
DE69023023T2 true DE69023023T2 (de) 1996-05-15

Family

ID=27290709

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023023T Expired - Fee Related DE69023023T2 (de) 1989-03-09 1990-03-09 Röntgenstrahl-Maskenstruktur und Röntgenstrahl-Belichtungsverfahren.

Country Status (3)

Country Link
US (2) US5196283A (de)
EP (1) EP0386786B1 (de)
DE (1) DE69023023T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022118318A1 (de) 2022-07-21 2024-02-01 Jenoptik Optical Systems Gmbh Verfahren und Vorrichtung zur Herstellung eines Bauelementes mit wenigstens einem Membranabschnitt und Bauelement und Verwendung eines Bauelements

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US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
US5335256A (en) * 1991-03-18 1994-08-02 Canon Kabushiki Kaisha Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction
SG43954A1 (en) * 1991-11-15 1997-11-14 Canon Kk X-ray mask structure and x-ray exposing method and semiconductor device manufactured by use of x-ray mask structure and method for manufacturing x-ray mask structure
JPH05343299A (ja) * 1992-06-08 1993-12-24 Mitsubishi Electric Corp Ｘ線マスク及びｘ線マスクの製造方法
JP3402661B2 (ja) * 1992-07-06 2003-05-06 キヤノン株式会社 カンチレバー型プローブ、及びこれを用いた情報処理装置
US5572562A (en) * 1993-04-30 1996-11-05 Lsi Logic Corporation Image mask substrate for X-ray semiconductor lithography
US5512395A (en) * 1993-04-30 1996-04-30 Lsi Logic Corporation Image masks for semiconductor lithography
JP2877190B2 (ja) * 1996-01-09 1999-03-31 日本電気株式会社 Ｘ線マスク及びその製造方法
US6066418A (en) * 1996-07-10 2000-05-23 Nec Corporation X-ray mask and fabrication process therefor
KR100244458B1 (ko) * 1997-03-26 2000-03-02 김영환 마스크 및 그 제조방법
US6297169B1 (en) * 1998-07-27 2001-10-02 Motorola, Inc. Method for forming a semiconductor device using a mask having a self-assembled monolayer
US6365326B1 (en) 1999-05-07 2002-04-02 International Business Machines Corporation Pattern density tailoring for etching of advanced lithographic mask
DE10004394A1 (de) * 2000-02-02 2001-08-16 Infineon Technologies Ag Verfahren zur Grabenätzung in Halbleitermaterial
US6537706B1 (en) * 2000-03-14 2003-03-25 Intel Corporation Method for making a photolithographic mask
US6610447B2 (en) * 2001-03-30 2003-08-26 Intel Corporation Extreme ultraviolet mask with improved absorber
KR100505014B1 (ko) * 2002-11-14 2005-08-01 전자부품연구원 Ｘ-선 마스크 및 그 제조방법
JP4220229B2 (ja) * 2002-12-16 2009-02-04 大日本印刷株式会社 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法
US7420653B2 (en) * 2003-10-02 2008-09-02 Asml Netherlands B.V. Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly
US8498381B2 (en) 2010-10-07 2013-07-30 Moxtek, Inc. Polymer layer on X-ray window
US9305735B2 (en) 2007-09-28 2016-04-05 Brigham Young University Reinforced polymer x-ray window
US8247971B1 (en) 2009-03-19 2012-08-21 Moxtek, Inc. Resistively heated small planar filament
US8526574B2 (en) 2010-09-24 2013-09-03 Moxtek, Inc. Capacitor AC power coupling across high DC voltage differential
US8804910B1 (en) 2011-01-24 2014-08-12 Moxtek, Inc. Reduced power consumption X-ray source
US8750458B1 (en) 2011-02-17 2014-06-10 Moxtek, Inc. Cold electron number amplifier
US8929515B2 (en) 2011-02-23 2015-01-06 Moxtek, Inc. Multiple-size support for X-ray window
US8989354B2 (en) 2011-05-16 2015-03-24 Brigham Young University Carbon composite support structure
US9174412B2 (en) 2011-05-16 2015-11-03 Brigham Young University High strength carbon fiber composite wafers for microfabrication
US9076628B2 (en) 2011-05-16 2015-07-07 Brigham Young University Variable radius taper x-ray window support structure
US8761344B2 (en) 2011-12-29 2014-06-24 Moxtek, Inc. Small x-ray tube with electron beam control optics
JP2014127630A (ja) 2012-12-27 2014-07-07 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
US9173623B2 (en) 2013-04-19 2015-11-03 Samuel Soonho Lee X-ray tube and receiver inside mouth
US9938616B2 (en) * 2014-07-29 2018-04-10 Lam Research Corporation Physical vapor deposition of low-stress nitrogen-doped tungsten films
US20230287555A1 (en) * 2022-03-10 2023-09-14 Abdulilah Mayet Micro-electromechanical system (mems) based inertial sensor and method of fabrication thereof

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US4235877A (en) * 1979-06-27 1980-11-25 Merck & Co., Inc. Liposome particle containing viral or bacterial antigenic subunit
DE3524196C3 (de) * 1984-07-06 1994-08-04 Canon Kk Lithografiemaske
JPS61118754A (ja) * 1984-11-15 1986-06-06 Canon Inc Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体
JPS61126551A (ja) * 1984-11-26 1986-06-14 Canon Inc Ｘ線リソグラフイ−用マスク構造体の製造方法
US4677042A (en) * 1984-11-05 1987-06-30 Canon Kabushiki Kaisha Mask structure for lithography, method for preparation thereof and lithographic method
DE3600169A1 (de) * 1985-01-07 1986-07-10 Canon K.K., Tokio/Tokyo Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren
JPS6280656A (ja) * 1985-10-04 1987-04-14 Toppan Printing Co Ltd フオトマスクブランクおよびフオトマスク
US4735877A (en) * 1985-10-07 1988-04-05 Canon Kabushiki Kaisha Lithographic mask structure and lithographic process
JPH0628230B2 (ja) * 1987-03-20 1994-04-13 三菱電機株式会社 Ｘ線露光用マスクおよびその製造方法
JPS6376872A (ja) * 1986-09-18 1988-04-07 Agency Of Ind Science & Technol 膜の内部圧縮応力低減方法
JPS63139352A (ja) * 1986-12-02 1988-06-11 Mitsubishi Paper Mills Ltd 印刷版用修正液
JPS63317676A (ja) * 1987-06-19 1988-12-26 Sharp Corp 無粒構造金属化合物薄膜の製造方法
JPS6376325A (ja) * 1987-06-30 1988-04-06 Agency Of Ind Science & Technol Ｘ線リソグラフィ−用マスクのｘ線吸収体膜
JPH0681728B2 (ja) * 1987-10-02 1994-10-19 株式会社上野製薬応用研究所 下 剤
US5012500A (en) * 1987-12-29 1991-04-30 Canon Kabushiki Kaisha X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask
JP2742056B2 (ja) * 1988-06-14 1998-04-22 富士通株式会社 Ｘ線マスク
US5005075A (en) * 1989-01-31 1991-04-02 Hoya Corporation X-ray mask and method of manufacturing an X-ray mask
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
JP2823276B2 (ja) * 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US5193283A (en) * 1992-07-27 1993-03-16 Alex Hsiao Bicycle wheel spike inpecting and adjusting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022118318A1 (de) 2022-07-21 2024-02-01 Jenoptik Optical Systems Gmbh Verfahren und Vorrichtung zur Herstellung eines Bauelementes mit wenigstens einem Membranabschnitt und Bauelement und Verwendung eines Bauelements

Also Published As

Publication number Publication date
EP0386786A2 (de) 1990-09-12
DE69023023D1 (de) 1995-11-23
EP0386786B1 (de) 1995-10-18
US5196283A (en) 1993-03-23
US5773177A (en) 1998-06-30
EP0386786A3 (de) 1991-05-02

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee