DE3772054D1 - Molekuelarstrahl-aetzvorrichtung und verfahren. - Google Patents

Molekuelarstrahl-aetzvorrichtung und verfahren.

Info

Publication number
DE3772054D1
DE3772054D1 DE8787908075T DE3772054T DE3772054D1 DE 3772054 D1 DE3772054 D1 DE 3772054D1 DE 8787908075 T DE8787908075 T DE 8787908075T DE 3772054 T DE3772054 T DE 3772054T DE 3772054 D1 DE3772054 D1 DE 3772054D1
Authority
DE
Germany
Prior art keywords
molecuelar
beam etching
etching device
molecuelar beam
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787908075T
Other languages
English (en)
Inventor
P Gillis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3772054D1 publication Critical patent/DE3772054D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
DE8787908075T 1987-03-16 1987-11-18 Molekuelarstrahl-aetzvorrichtung und verfahren. Expired - Fee Related DE3772054D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/026,072 US4734158A (en) 1987-03-16 1987-03-16 Molecular beam etching system and method
PCT/US1987/003032 WO1988007261A1 (en) 1987-03-16 1987-11-18 Molecular beam etching system and method

Publications (1)

Publication Number Publication Date
DE3772054D1 true DE3772054D1 (de) 1991-09-12

Family

ID=21829732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787908075T Expired - Fee Related DE3772054D1 (de) 1987-03-16 1987-11-18 Molekuelarstrahl-aetzvorrichtung und verfahren.

Country Status (5)

Country Link
US (1) US4734158A (de)
EP (1) EP0305411B1 (de)
JP (1) JPH01503094A (de)
DE (1) DE3772054D1 (de)
WO (1) WO1988007261A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108543A (en) * 1984-11-07 1992-04-28 Hitachi, Ltd. Method of surface treatment
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
US4874459A (en) * 1988-10-17 1989-10-17 The Regents Of The University Of California Low damage-producing, anisotropic, chemically enhanced etching method and apparatus
US4994140A (en) * 1989-01-10 1991-02-19 Optoelectronics Technology Research Corporation Method capable of forming a fine pattern without crystal defects
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
DE3910491C1 (de) * 1989-03-31 1990-06-28 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
US5236537A (en) * 1989-04-07 1993-08-17 Seiko Epson Corporation Plasma etching apparatus
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5205902A (en) * 1989-08-18 1993-04-27 Galileo Electro-Optics Corporation Method of manufacturing microchannel electron multipliers
US5086248A (en) * 1989-08-18 1992-02-04 Galileo Electro-Optics Corporation Microchannel electron multipliers
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
JP2706369B2 (ja) * 1990-11-26 1998-01-28 シャープ株式会社 化合物半導体の成長方法及び半導体レーザの製造方法
JP2774884B2 (ja) * 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
US5286331A (en) * 1991-11-01 1994-02-15 International Business Machines Corporation Supersonic molecular beam etching of surfaces
DE4204650C1 (de) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
JPH08153700A (ja) * 1994-11-25 1996-06-11 Semiconductor Energy Lab Co Ltd 導電性被膜の異方性エッチング方法
US5753092A (en) * 1996-08-26 1998-05-19 Velocidata, Inc. Cylindrical carriage sputtering system
US5821548A (en) * 1996-12-20 1998-10-13 Technical Visions, Inc. Beam source for production of radicals and metastables
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions
US6106683A (en) * 1997-06-23 2000-08-22 Toyo Technologies Inc. Grazing angle plasma polisher (GAPP)
US6162735A (en) * 1999-03-26 2000-12-19 Infineon Technologies North America Corp. In-situ method for preparing and highlighting of defects for failure analysis
JP2001077058A (ja) * 1999-09-08 2001-03-23 Seiko Instruments Inc 集束イオンビームを用いた加工方法
JP2002231700A (ja) * 2001-02-05 2002-08-16 Speedfam Co Ltd ナノトポグラフィ除去方法
US7767928B2 (en) * 2001-09-05 2010-08-03 Lasertec Gmbh Depth measurement and depth control or automatic depth control for a hollow to be produced by a laser processing device
US7008803B2 (en) * 2002-10-24 2006-03-07 International Business Machines Corporation Method of reworking structures incorporating low-k dielectric materials
US7154086B2 (en) * 2003-03-19 2006-12-26 Burle Technologies, Inc. Conductive tube for use as a reflectron lens
US20080073516A1 (en) * 2006-03-10 2008-03-27 Laprade Bruce N Resistive glass structures used to shape electric fields in analytical instruments
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
US11996266B2 (en) * 2019-12-02 2024-05-28 Applied Materials, Inc. Apparatus and techniques for substrate processing using independent ion source and radical source

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
JPS5776841A (en) * 1980-10-30 1982-05-14 Nec Corp Etching method of silicon oxide film
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
FR2527383A1 (fr) * 1982-05-24 1983-11-25 Univ Reims Champagne Ardenne Canon a electrons avec cathode a emission de champ et lentille magnetique
US4411733A (en) * 1982-06-18 1983-10-25 Bell Telephone Laboratories, Incorporated SPER Device for material working
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4599135A (en) * 1983-09-30 1986-07-08 Hitachi, Ltd. Thin film deposition
JPS60120525A (ja) * 1983-12-02 1985-06-28 Nippon Telegr & Teleph Corp <Ntt> 反応性イオンエツチング方法
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
JPS61136229A (ja) * 1984-12-06 1986-06-24 Toshiba Corp ドライエツチング装置
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
US4620898A (en) * 1985-09-13 1986-11-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ion beam sputter etching

Also Published As

Publication number Publication date
WO1988007261A1 (en) 1988-09-22
EP0305411A1 (de) 1989-03-08
EP0305411B1 (de) 1991-08-07
JPH01503094A (ja) 1989-10-19
US4734158A (en) 1988-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee