KR100516311B1 - 액티브매트릭스표시장치및그제조방법 - Google Patents

액티브매트릭스표시장치및그제조방법 Download PDF

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Publication number
KR100516311B1
KR100516311B1 KR1019970066853A KR19970066853A KR100516311B1 KR 100516311 B1 KR100516311 B1 KR 100516311B1 KR 1019970066853 A KR1019970066853 A KR 1019970066853A KR 19970066853 A KR19970066853 A KR 19970066853A KR 100516311 B1 KR100516311 B1 KR 100516311B1
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KR
South Korea
Prior art keywords
semiconductor film
film
active matrix
data driver
driver circuit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019970066853A
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English (en)
Korean (ko)
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KR19980063913A (ko
Inventor
준 고야마
야스시 오가타
순페이 야마자끼
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR19980063913A publication Critical patent/KR19980063913A/ko
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Publication of KR100516311B1 publication Critical patent/KR100516311B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1019970066853A 1996-12-09 1997-12-09 액티브매트릭스표시장치및그제조방법 Expired - Fee Related KR100516311B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP34457496 1996-12-09
JP96-344574 1996-12-09
JP97-287715 1997-10-03
JP9287715A JPH10228248A (ja) 1996-12-09 1997-10-03 アクティブマトリクス表示装置およびその作製方法

Publications (2)

Publication Number Publication Date
KR19980063913A KR19980063913A (ko) 1998-10-07
KR100516311B1 true KR100516311B1 (ko) 2005-12-16

Family

ID=26556854

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970066853A Expired - Fee Related KR100516311B1 (ko) 1996-12-09 1997-12-09 액티브매트릭스표시장치및그제조방법

Country Status (5)

Country Link
US (1) US6777272B2 (https=)
JP (1) JPH10228248A (https=)
KR (1) KR100516311B1 (https=)
CN (2) CN100347822C (https=)
TW (1) TW359856B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101543829B1 (ko) * 2011-11-11 2015-08-11 보에 테크놀로지 그룹 컴퍼니 리미티드 박막 트랜지스터, 그 제조 방법 및 디스플레이 장치

Families Citing this family (14)

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US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JP3942683B2 (ja) * 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP2000163014A (ja) * 1998-11-27 2000-06-16 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
KR20040040158A (ko) * 2002-11-06 2004-05-12 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터의 제조방법
JP4464078B2 (ja) * 2003-06-20 2010-05-19 株式会社 日立ディスプレイズ 画像表示装置
KR100611154B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 금속 유도 결정화 방법을 이용한 박막 트랜지스터, 이의제조 방법 및 이를 사용하는 액티브 매트릭스 평판 표시장치
US9734901B2 (en) 2004-10-29 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device with semiconductor memory cell
KR20080111693A (ko) * 2007-06-19 2008-12-24 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100882909B1 (ko) * 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
US9171840B2 (en) * 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2613346B1 (en) * 2011-11-11 2022-06-08 BOE Technology Group Co., Ltd. Thin film transistor, manufacturing method thereof and display device
CN103489920B (zh) * 2013-09-26 2016-08-17 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示装置

Citations (3)

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JPH07321339A (ja) * 1993-06-25 1995-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH086053A (ja) * 1994-06-15 1996-01-12 Sharp Corp 液晶表示装置
JPH0876142A (ja) * 1994-09-01 1996-03-22 Sharp Corp 液晶表示装置

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JPH0261032A (ja) 1988-08-24 1990-03-01 Sumitomo Metal Ind Ltd 疲労強度の優れた肌焼鋼
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JPH07321339A (ja) * 1993-06-25 1995-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH086053A (ja) * 1994-06-15 1996-01-12 Sharp Corp 液晶表示装置
JPH0876142A (ja) * 1994-09-01 1996-03-22 Sharp Corp 液晶表示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101543829B1 (ko) * 2011-11-11 2015-08-11 보에 테크놀로지 그룹 컴퍼니 리미티드 박막 트랜지스터, 그 제조 방법 및 디스플레이 장치
US9218957B2 (en) 2011-11-11 2015-12-22 Boe Technology Group Co., Ltd. Thin film transistor and manufacturing method thereof and display device

Also Published As

Publication number Publication date
KR19980063913A (ko) 1998-10-07
US20030034940A1 (en) 2003-02-20
US6777272B2 (en) 2004-08-17
JPH10228248A (ja) 1998-08-25
CN1188243A (zh) 1998-07-22
TW359856B (en) 1999-06-01
CN100347822C (zh) 2007-11-07
CN1624875A (zh) 2005-06-08
CN1188738C (zh) 2005-02-09

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