KR100467003B1 - 광전변환장치 - Google Patents

광전변환장치 Download PDF

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Publication number
KR100467003B1
KR100467003B1 KR10-1998-0012556A KR19980012556A KR100467003B1 KR 100467003 B1 KR100467003 B1 KR 100467003B1 KR 19980012556 A KR19980012556 A KR 19980012556A KR 100467003 B1 KR100467003 B1 KR 100467003B1
Authority
KR
South Korea
Prior art keywords
photoelectric conversion
conversion device
conductive member
adhesive
wavelength conversion
Prior art date
Application number
KR10-1998-0012556A
Other languages
English (en)
Korean (ko)
Other versions
KR19980081229A (ko
Inventor
에이이찌 다까미
노리유끼 가이후
겐지 가지와라
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR19980081229A publication Critical patent/KR19980081229A/ko
Application granted granted Critical
Publication of KR100467003B1 publication Critical patent/KR100467003B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photovoltaic Devices (AREA)
  • Facsimile Heads (AREA)
KR10-1998-0012556A 1997-04-10 1998-04-09 광전변환장치 KR100467003B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10684397 1997-04-10
JP97-106843 1997-04-10
JP98-096958 1998-03-26
JP09695898A JP3805100B2 (ja) 1997-04-10 1998-03-26 光電変換装置
JP10-096958 1998-03-26

Publications (2)

Publication Number Publication Date
KR19980081229A KR19980081229A (ko) 1998-11-25
KR100467003B1 true KR100467003B1 (ko) 2005-04-14

Family

ID=26438099

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0012556A KR100467003B1 (ko) 1997-04-10 1998-04-09 광전변환장치

Country Status (5)

Country Link
US (3) US6384393B2 (ja)
EP (2) EP0872896B1 (ja)
JP (1) JP3805100B2 (ja)
KR (1) KR100467003B1 (ja)
DE (1) DE69825808T2 (ja)

Families Citing this family (18)

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JP3805100B2 (ja) * 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP2000131444A (ja) 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
FR2793072B1 (fr) * 1999-04-30 2001-11-30 Commissariat Energie Atomique Dispositif de detection compact pour gamma camera
FR2793071B1 (fr) * 1999-04-30 2001-06-08 Commissariat Energie Atomique Gamma camera miniature a detecteurs semiconducteurs
JP2001015723A (ja) 1999-06-30 2001-01-19 Canon Inc 放射線光変換装置、それを備える放射線撮像装置、放射線撮像システム及び放射線光変換装置の製造方法
FR2840410B1 (fr) * 2002-05-30 2004-08-13 Bruno Coissac Dispositif permettant de tester et analyser rapidement des cables equipes de connecteurs sous des environnements lumineux differents
US20050184244A1 (en) * 2004-02-25 2005-08-25 Shimadzu Corporation Radiation detector and light or radiation detector
JP5403848B2 (ja) * 2005-03-16 2014-01-29 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP4537333B2 (ja) * 2006-03-13 2010-09-01 アロカ株式会社 放射線測定装置の製造方法
JP5702047B2 (ja) * 2008-10-23 2015-04-15 富士フイルム株式会社 放射線変換シートおよび放射線画像検出器
US7795573B2 (en) * 2008-11-17 2010-09-14 Teledyne Scientific & Imaging, Llc Detector with mounting hub to isolate temperature induced strain and method of fabricating the same
EP2380015A4 (en) 2008-12-30 2016-10-26 Sikorsky Aircraft Corp NON-DESTRUCTIVE INSPECTION PROCEDURE WITH OBJECTIVE ASSESSMENT
JP5927873B2 (ja) 2011-12-01 2016-06-01 三菱電機株式会社 画像検出器
US9496425B2 (en) * 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
JP5627049B2 (ja) * 2013-06-07 2014-11-19 富士フイルム株式会社 電子カセッテ
SI24581A (sl) * 2013-12-10 2015-06-30 Intech-Les, Razvojni Center, D.O.O. Detektor za visoko učinkovito detekcijo fotonov in postopek izdelave omenjenega detektorja
JP6291951B2 (ja) * 2014-03-25 2018-03-14 富士ゼロックス株式会社 画像読取装置及び画像形成装置
US10126165B2 (en) * 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors

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JPS58118977A (ja) * 1982-01-08 1983-07-15 Toshiba Corp 放射線検出器
EP0529981A2 (en) * 1991-08-29 1993-03-03 General Electric Company Planar X-ray imager having a moisture-resistant sealing structure

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Publication number Priority date Publication date Assignee Title
JPS58118977A (ja) * 1982-01-08 1983-07-15 Toshiba Corp 放射線検出器
EP0529981A2 (en) * 1991-08-29 1993-03-03 General Electric Company Planar X-ray imager having a moisture-resistant sealing structure

Also Published As

Publication number Publication date
US20020070344A1 (en) 2002-06-13
DE69825808T2 (de) 2005-09-01
US6384393B2 (en) 2002-05-07
EP0872896B1 (en) 2004-08-25
JPH10341013A (ja) 1998-12-22
KR19980081229A (ko) 1998-11-25
EP1432043A2 (en) 2004-06-23
EP0872896A1 (en) 1998-10-21
US20070108372A1 (en) 2007-05-17
US7164112B2 (en) 2007-01-16
JP3805100B2 (ja) 2006-08-02
EP1432043A3 (en) 2012-04-11
DE69825808D1 (de) 2004-09-30
US7663082B2 (en) 2010-02-16

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