KR100455903B1 - 세정건조처리장치 - Google Patents
세정건조처리장치 Download PDFInfo
- Publication number
- KR100455903B1 KR100455903B1 KR10-1998-0022196A KR19980022196A KR100455903B1 KR 100455903 B1 KR100455903 B1 KR 100455903B1 KR 19980022196 A KR19980022196 A KR 19980022196A KR 100455903 B1 KR100455903 B1 KR 100455903B1
- Authority
- KR
- South Korea
- Prior art keywords
- drying
- shutter
- cleaning
- processing chamber
- liquid
- Prior art date
Links
- 238000001035 drying Methods 0.000 title claims abstract description 261
- 238000004140 cleaning Methods 0.000 title claims abstract description 166
- 239000007788 liquid Substances 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims description 26
- 238000005406 washing Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 22
- 239000000126 substance Substances 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 114
- 235000012431 wafers Nutrition 0.000 description 109
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 48
- 230000003028 elevating effect Effects 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- -1 alcohol ketones Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1997-172794 | 1997-06-13 | ||
JP97-172794 | 1997-06-13 | ||
JP17279497A JP3156074B2 (ja) | 1997-06-13 | 1997-06-13 | 洗浄・乾燥処理装置 |
JP18602497A JP3156075B2 (ja) | 1997-06-27 | 1997-06-27 | 乾燥処理装置 |
JP97-186024 | 1997-06-27 | ||
JP1997-186024 | 1997-06-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990006968A KR19990006968A (ko) | 1999-01-25 |
KR100455903B1 true KR100455903B1 (ko) | 2005-01-24 |
Family
ID=26495030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1998-0022196A KR100455903B1 (ko) | 1997-06-13 | 1998-06-13 | 세정건조처리장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6164297A (de) |
EP (1) | EP0884764B1 (de) |
KR (1) | KR100455903B1 (de) |
DE (1) | DE69837364T2 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6050275A (en) * | 1996-09-27 | 2000-04-18 | Tokyo Electron Limited | Apparatus for and method of cleaning objects to be processed |
JP3171807B2 (ja) | 1997-01-24 | 2001-06-04 | 東京エレクトロン株式会社 | 洗浄装置及び洗浄方法 |
TW539918B (en) * | 1997-05-27 | 2003-07-01 | Tokyo Electron Ltd | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
US6334266B1 (en) * | 1999-09-20 | 2002-01-01 | S.C. Fluids, Inc. | Supercritical fluid drying system and method of use |
US6748960B1 (en) * | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
US6502591B1 (en) * | 2000-06-08 | 2003-01-07 | Semitool, Inc. | Surface tension effect dryer with porous vessel walls |
JP3837016B2 (ja) * | 2000-09-28 | 2006-10-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
US6732749B2 (en) * | 2000-12-22 | 2004-05-11 | Akrion, Llc | Particle barrier drain |
KR100899609B1 (ko) * | 2000-12-28 | 2009-05-27 | 도쿄엘렉트론가부시키가이샤 | 기판처리장치 및 기판처리방법 |
KR100419561B1 (ko) * | 2001-02-01 | 2004-02-19 | 에이펫(주) | 웨이퍼 세정 및 건조 장치 |
KR100440891B1 (ko) * | 2001-02-01 | 2004-07-19 | 에이펫(주) | 웨이퍼 건조 방법 |
US6564469B2 (en) * | 2001-07-09 | 2003-05-20 | Motorola, Inc. | Device for performing surface treatment on semiconductor wafers |
US20040025901A1 (en) * | 2001-07-16 | 2004-02-12 | Semitool, Inc. | Stationary wafer spin/spray processor |
JP2003164816A (ja) * | 2001-11-29 | 2003-06-10 | Fine Machine Kataoka Kk | 洗浄装置と、そのワーク搬送方法 |
KR100454241B1 (ko) * | 2001-12-28 | 2004-10-26 | 한국디엔에스 주식회사 | 웨이퍼 건조 장비 |
JP3939178B2 (ja) * | 2002-03-25 | 2007-07-04 | 大日本スクリーン製造株式会社 | 高圧乾燥装置、高圧乾燥方法および基板処理装置 |
KR100481858B1 (ko) * | 2002-07-22 | 2005-04-11 | 삼성전자주식회사 | 공비혼합 효과를 이용하여 반도체기판을 건조시키는 장비및 상기 장비를 사용하는 건조방법 |
US20040074102A1 (en) * | 2002-10-21 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dryer lid for substrate dryer |
US6722642B1 (en) | 2002-11-06 | 2004-04-20 | Tokyo Electron Limited | High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism |
US6918192B2 (en) * | 2002-11-07 | 2005-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate drying system |
JP2004207503A (ja) * | 2002-12-25 | 2004-07-22 | Canon Inc | 処理装置 |
US7146994B2 (en) * | 2003-03-17 | 2006-12-12 | Novellus Systems, Inc. | Active rinse shield for electrofill chemical bath and method of use |
US7270137B2 (en) * | 2003-04-28 | 2007-09-18 | Tokyo Electron Limited | Apparatus and method of securing a workpiece during high-pressure processing |
KR100568104B1 (ko) * | 2003-08-26 | 2006-04-05 | 삼성전자주식회사 | 반도체 기판 세정 장치 및 세정 방법 |
KR100636035B1 (ko) * | 2003-11-08 | 2006-10-18 | 삼성전자주식회사 | 웨이퍼를 건조하기 위한 방법 및 장치, 그리고 웨이퍼 건조 장치를 포함하는 웨이퍼 처리 장치 |
KR20050068063A (ko) * | 2003-12-29 | 2005-07-05 | 삼성전자주식회사 | 회전가능한 건조가스 노즐들을 갖는 린스/건조 장비 및이를 사용하여 반도체 웨이퍼들을 린스/건조시키는 방법 |
JP2006093334A (ja) * | 2004-09-22 | 2006-04-06 | Ses Co Ltd | 基板処理装置 |
US7228645B2 (en) * | 2005-01-11 | 2007-06-12 | Xuyen Ngoc Pham | Multi-zone shower head for drying single semiconductor substrate |
US7767145B2 (en) | 2005-03-28 | 2010-08-03 | Toyko Electron Limited | High pressure fourier transform infrared cell |
JP2006310767A (ja) * | 2005-03-28 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US20060219274A1 (en) * | 2005-03-29 | 2006-10-05 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
JP4535967B2 (ja) * | 2005-08-19 | 2010-09-01 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4634266B2 (ja) * | 2005-09-28 | 2011-02-16 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US8635784B2 (en) * | 2005-10-04 | 2014-01-28 | Applied Materials, Inc. | Methods and apparatus for drying a substrate |
DE102005058269B4 (de) * | 2005-12-06 | 2011-12-01 | Stangl Semiconductor Equipment Ag | Vorrichtung zum Reinigen eines gesägten Waferblocks |
KR100753959B1 (ko) * | 2006-01-12 | 2007-08-31 | 에이펫(주) | 기판 건조장치를 이용한 기판 건조방법 |
KR100816740B1 (ko) * | 2006-08-30 | 2008-03-27 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US20080155852A1 (en) * | 2006-12-29 | 2008-07-03 | Olgado Donald J K | Multiple substrate vapor drying systems and methods |
US8033288B2 (en) * | 2007-03-09 | 2011-10-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment apparatus |
WO2009001379A1 (en) * | 2007-06-26 | 2008-12-31 | Afco C.V. | Drying apparatus and method for silicon-based electronic circuits |
JP5122265B2 (ja) * | 2007-10-01 | 2013-01-16 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
KR101431197B1 (ko) * | 2008-01-24 | 2014-09-17 | 삼성전자주식회사 | 원자층 증착설비 및 그의 원자층 증착방법 |
US8344761B2 (en) * | 2008-09-19 | 2013-01-01 | Ikanos Communications, Inc. | 3-level line driver |
US8429831B2 (en) * | 2009-09-04 | 2013-04-30 | Abbott Cardiovascular Systems Inc. | Drug-eluting coatings applied to medical devices by spraying and drying to remove solvent |
US8011114B2 (en) * | 2009-12-04 | 2011-09-06 | Superior Investments, Inc. | Vehicle dryer with butterfly inlet valve |
KR101255902B1 (ko) * | 2011-02-28 | 2013-04-17 | 삼성전기주식회사 | 기판 건조 장치 및 기판 건조 방법 |
JP5815967B2 (ja) * | 2011-03-31 | 2015-11-17 | 東京エレクトロン株式会社 | 基板洗浄装置及び真空処理システム |
JP5708506B2 (ja) * | 2011-04-20 | 2015-04-30 | 東京エレクトロン株式会社 | 処理装置 |
DE202011110123U1 (de) * | 2011-11-29 | 2013-02-21 | Rena Gmbh | Vorrichtung zum Trocknen von Substraten |
JP5923300B2 (ja) * | 2011-12-28 | 2016-05-24 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR101517152B1 (ko) * | 2013-08-29 | 2015-04-30 | 주식회사 케이씨텍 | 기판 처리 장치 및 그 제어 방법 |
US20150090299A1 (en) * | 2013-09-27 | 2015-04-02 | Applied Materials, Inc. | Processes and apparatus for cleaning, rinsing, and drying substrates |
TWI630652B (zh) | 2014-03-17 | 2018-07-21 | 斯克林集團公司 | 基板處理裝置及使用基板處理裝置之基板處理方法 |
JP6499414B2 (ja) * | 2014-09-30 | 2019-04-10 | 株式会社Screenホールディングス | 基板処理装置 |
WO2017218152A1 (en) * | 2016-06-16 | 2017-12-21 | Applied Materials, Inc. | Wafer processor door interface |
CN113169098A (zh) | 2018-12-03 | 2021-07-23 | 应用材料公司 | 用于马兰戈尼干燥的方法和设备 |
CN112185852B (zh) * | 2020-09-21 | 2023-08-18 | 武汉光谷航天三江激光产业技术研究院有限公司 | 用于半导体器件封装的可搬运级联式百级洁净装置及方法 |
JP7475252B2 (ja) * | 2020-10-02 | 2024-04-26 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
JP2022138907A (ja) * | 2021-03-11 | 2022-09-26 | キオクシア株式会社 | 基板洗浄装置および基板洗浄方法 |
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US2544423A (en) * | 1948-05-15 | 1951-03-06 | Daniel And Florence Guggenheim | Liquid-sealing means between stationary and rotated parts |
US4132567A (en) * | 1977-10-13 | 1979-01-02 | Fsi Corporation | Apparatus for and method of cleaning and removing static charges from substrates |
US4286541A (en) * | 1979-07-26 | 1981-09-01 | Fsi Corporation | Applying photoresist onto silicon wafers |
US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
NL8900480A (nl) * | 1989-02-27 | 1990-09-17 | Philips Nv | Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. |
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SE467484B (sv) * | 1990-11-12 | 1992-07-27 | Holmstrands Machinery Ab | Apparat foer rengoering av verkstadsgods |
JPH05234974A (ja) * | 1992-02-19 | 1993-09-10 | Ricoh Co Ltd | 基板洗浄装置及び洗浄方法 |
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US5409310A (en) * | 1993-09-30 | 1995-04-25 | Semitool, Inc. | Semiconductor processor liquid spray system with additive blending |
US5863348A (en) * | 1993-12-22 | 1999-01-26 | International Business Machines Corporation | Programmable method for cleaning semiconductor elements |
US5431178A (en) * | 1994-03-30 | 1995-07-11 | Chiu; Hsien Hsin | Centrifugal type, enclosed cleaning apparatus |
DE4413077C2 (de) * | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur chemischen Behandlung von Substraten |
US5571337A (en) * | 1994-11-14 | 1996-11-05 | Yieldup International | Method for cleaning and drying a semiconductor wafer |
US5752532A (en) * | 1995-08-17 | 1998-05-19 | Schwenkler; Robert S. | Method for the precision cleaning and drying surfaces |
JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
US6050275A (en) * | 1996-09-27 | 2000-04-18 | Tokyo Electron Limited | Apparatus for and method of cleaning objects to be processed |
KR100707107B1 (ko) * | 1997-07-17 | 2007-12-27 | 동경 엘렉트론 주식회사 | 세정.건조처리방법및장치 |
-
1998
- 1998-06-12 US US09/096,662 patent/US6164297A/en not_active Expired - Lifetime
- 1998-06-13 KR KR10-1998-0022196A patent/KR100455903B1/ko not_active IP Right Cessation
- 1998-06-15 EP EP98110895A patent/EP0884764B1/de not_active Expired - Lifetime
- 1998-06-15 DE DE69837364T patent/DE69837364T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69837364D1 (de) | 2007-05-03 |
EP0884764A2 (de) | 1998-12-16 |
KR19990006968A (ko) | 1999-01-25 |
US6164297A (en) | 2000-12-26 |
DE69837364T2 (de) | 2007-11-29 |
EP0884764A3 (de) | 2004-01-21 |
EP0884764B1 (de) | 2007-03-21 |
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