KR100424693B1 - 집적회로처리시스템및집적회로처리방법 - Google Patents

집적회로처리시스템및집적회로처리방법 Download PDF

Info

Publication number
KR100424693B1
KR100424693B1 KR1019970708733A KR19970708733A KR100424693B1 KR 100424693 B1 KR100424693 B1 KR 100424693B1 KR 1019970708733 A KR1019970708733 A KR 1019970708733A KR 19970708733 A KR19970708733 A KR 19970708733A KR 100424693 B1 KR100424693 B1 KR 100424693B1
Authority
KR
South Korea
Prior art keywords
probe
circuit
substrate
integrated circuits
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970708733A
Other languages
English (en)
Korean (ko)
Other versions
KR19990022254A (ko
Inventor
글렌 리디
Original Assignee
글렌 리디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 글렌 리디 filed Critical 글렌 리디
Publication of KR19990022254A publication Critical patent/KR19990022254A/ko
Application granted granted Critical
Publication of KR100424693B1 publication Critical patent/KR100424693B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2865—Holding devices, e.g. chucks; Handlers or transport devices
    • G01R31/2867—Handlers or transport devices, e.g. loaders, carriers, trays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868—Complete testing stations; systems; procedures; software aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505—Test of Modular systems, e.g. Wafers, MCM's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505—Test of Modular systems, e.g. Wafers, MCM's
    • G01R31/318511—Wafer Test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31903—Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31905—Interface with the device under test [DUT], e.g. arrangements between the test head and the DUT, mechanical aspects, fixture
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31903—Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31912—Tester/user interface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70658—Electrical testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5381—Crossover interconnections, e.g. bridge stepovers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
    • G01R31/2806—Apparatus therefor, e.g. test stations, drivers, analysers, conveyors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7565—Means for transporting the components to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Geometry (AREA)
  • Human Computer Interaction (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019970708733A 1995-06-07 1996-05-31 집적회로처리시스템및집적회로처리방법 Expired - Fee Related KR100424693B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/474,489 1995-06-07
US08/474,489 US6288561B1 (en) 1988-05-16 1995-06-07 Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
US08/474,489 1995-06-07

Publications (2)

Publication Number Publication Date
KR19990022254A KR19990022254A (ko) 1999-03-25
KR100424693B1 true KR100424693B1 (ko) 2004-07-27

Family

ID=23883747

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970708733A Expired - Fee Related KR100424693B1 (ko) 1995-06-07 1996-05-31 집적회로처리시스템및집적회로처리방법

Country Status (7)

Country Link
US (5) US6288561B1 (enExample)
EP (1) EP0832438A4 (enExample)
JP (1) JPH11512231A (enExample)
KR (1) KR100424693B1 (enExample)
CN (1) CN1116613C (enExample)
TW (1) TW297145B (enExample)
WO (1) WO1996041204A1 (enExample)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
JP3264851B2 (ja) * 1997-01-24 2002-03-11 株式会社新川 ボンディング装置
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US6899805B2 (en) 1998-05-01 2005-05-31 Semitool, Inc. Automated chemical management system executing improved electrolyte analysis method
US6152943A (en) * 1998-08-14 2000-11-28 Incept Llc Methods and apparatus for intraluminal deposition of hydrogels
US6318935B1 (en) * 1998-11-23 2001-11-20 Ouellette Machinery Systems, Inc. Braking system for air conveyors
US6456099B1 (en) * 1998-12-31 2002-09-24 Formfactor, Inc. Special contact points for accessing internal circuitry of an integrated circuit
US6244429B1 (en) 1999-05-04 2001-06-12 Kalish Canada Inc. Automatic adjustable guide rails
EP1940215A3 (en) 1999-05-21 2011-03-16 Panasonic Corporation Device for transferring/holding sheetlike member and its method
US6501290B2 (en) * 1999-09-29 2002-12-31 Intel Corporation Direct to chuck coolant delivery for integrated circuit testing
JP2001155980A (ja) * 1999-11-25 2001-06-08 Nec Corp 検査補修システム、製品製造システム、部材検査装置、データ処理装置、部材補修装置、情報記憶媒体
DE19961791C2 (de) * 1999-12-21 2002-11-28 Infineon Technologies Ag Anordnung zum Testen von Chips mittels einer gedruckten Schaltungsplatte
US6564165B1 (en) * 1999-12-22 2003-05-13 Trw Inc. Apparatus and method for inline testing of electrical components
JP2001267389A (ja) * 2000-03-21 2001-09-28 Hiroshima Nippon Denki Kk 半導体メモリ生産システム及び半導体メモリ生産方法
JP3555859B2 (ja) * 2000-03-27 2004-08-18 広島日本電気株式会社 半導体生産システム及び半導体装置の生産方法
US6830940B1 (en) * 2000-11-16 2004-12-14 Optical Communication Products, Inc. Method and apparatus for performing whole wafer burn-in
DE10108924A1 (de) * 2001-02-23 2002-09-05 Infineon Technologies Ag Wafer-Test- und Markierverfahren für Halbleiterbausteine mit Schmelzstrukturen
US6753688B2 (en) * 2001-04-10 2004-06-22 International Business Machines Corporation Interconnect package cluster probe short removal apparatus and method
US6748994B2 (en) 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
US6608497B1 (en) * 2001-10-15 2003-08-19 Amkor Technology, Inc. Apparatus and method for allowing testing of semiconductor devices at different temperatures
US7064953B2 (en) * 2001-12-27 2006-06-20 Formfactor, Inc. Electronic package with direct cooling of active electronic components
US6891385B2 (en) * 2001-12-27 2005-05-10 Formfactor, Inc. Probe card cooling assembly with direct cooling of active electronic components
US7023227B1 (en) * 2002-02-12 2006-04-04 National Semiconductor Corporation Apparatus for socketing and testing integrated circuits and methods of operating the same
US20030159921A1 (en) * 2002-02-22 2003-08-28 Randy Harris Apparatus with processing stations for manually and automatically processing microelectronic workpieces
US6991710B2 (en) * 2002-02-22 2006-01-31 Semitool, Inc. Apparatus for manually and automatically processing microelectronic workpieces
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
AU2003255254A1 (en) 2002-08-08 2004-02-25 Glenn J. Leedy Vertical system integration
US7750654B2 (en) * 2002-09-02 2010-07-06 Octec Inc. Probe method, prober, and electrode reducing/plasma-etching processing mechanism
KR100651359B1 (ko) * 2002-09-02 2006-11-30 가부시끼가이샤 오크테크 프로브 방법 및 프로브 장치
US6889509B1 (en) 2002-09-13 2005-05-10 Isothermal Systems Research Inc. Coolant recovery system
JP3916549B2 (ja) * 2002-10-31 2007-05-16 東京エレクトロン株式会社 プロセスモニタ及び半導体製造装置
DE10253717B4 (de) * 2002-11-18 2011-05-19 Applied Materials Gmbh Vorrichtung zum Kontaktieren für den Test mindestens eines Testobjekts, Testsystem und Verfahren zum Testen von Testobjekten
JP2004227842A (ja) * 2003-01-21 2004-08-12 Canon Inc プローブ保持装置、試料の取得装置、試料加工装置、試料加工方法、および試料評価方法
JP2004265942A (ja) * 2003-02-20 2004-09-24 Okutekku:Kk プローブピンのゼロ点検出方法及びプローブ装置
JP4503954B2 (ja) * 2003-08-21 2010-07-14 株式会社日立ハイテクインスツルメンツ 基板位置決め装置及び基板位置決め方法
DE102004013707B9 (de) * 2003-08-28 2016-06-23 Cascade Microtech, Inc. Vorrichtung zum Testen von Substraten
US8775997B2 (en) * 2003-09-15 2014-07-08 Nvidia Corporation System and method for testing and configuring semiconductor functional circuits
CN1849588A (zh) * 2003-09-15 2006-10-18 辉达公司 用于测试和配置半导体功能电路的系统和方法
US8788996B2 (en) 2003-09-15 2014-07-22 Nvidia Corporation System and method for configuring semiconductor functional circuits
US8732644B1 (en) 2003-09-15 2014-05-20 Nvidia Corporation Micro electro mechanical switch system and method for testing and configuring semiconductor functional circuits
US7183787B2 (en) * 2003-11-26 2007-02-27 Lsi Logic Corporation Contact resistance device for improved process control
US8711161B1 (en) 2003-12-18 2014-04-29 Nvidia Corporation Functional component compensation reconfiguration system and method
US7911218B2 (en) * 2003-12-22 2011-03-22 Robert Bosch Gmbh Device and method for analyzing a sample plate
US20060038554A1 (en) * 2004-02-12 2006-02-23 Applied Materials, Inc. Electron beam test system stage
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US8581610B2 (en) * 2004-04-21 2013-11-12 Charles A Miller Method of designing an application specific probe card test system
JP2008507688A (ja) * 2004-07-21 2008-03-13 アフォレ オサケユイチア 圧力試験のための圧力試験装置および方法
US8723231B1 (en) 2004-09-15 2014-05-13 Nvidia Corporation Semiconductor die micro electro-mechanical switch management system and method
US8711156B1 (en) 2004-09-30 2014-04-29 Nvidia Corporation Method and system for remapping processing elements in a pipeline of a graphics processing unit
US7053644B1 (en) * 2004-12-15 2006-05-30 Aehr Test Systems System for testing and burning in of integrated circuits
US8021193B1 (en) * 2005-04-25 2011-09-20 Nvidia Corporation Controlled impedance display adapter
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
US7793029B1 (en) 2005-05-17 2010-09-07 Nvidia Corporation Translation device apparatus for configuring printed circuit board connectors
TWI288240B (en) * 2005-06-14 2007-10-11 Siliconware Precision Industries Co Ltd Electronic component test system including temperature measurement by light
JP4178417B2 (ja) * 2005-07-25 2008-11-12 セイコーエプソン株式会社 半導体装置の製造方法
US20070024312A1 (en) * 2005-07-27 2007-02-01 Atmel Germany Gmbh Device and method for the testing of integrated semiconductor circuits on wafers
JP2007042911A (ja) * 2005-08-04 2007-02-15 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
US9092170B1 (en) 2005-10-18 2015-07-28 Nvidia Corporation Method and system for implementing fragment operation processing across a graphics bus interconnect
US8417838B2 (en) * 2005-12-12 2013-04-09 Nvidia Corporation System and method for configurable digital communication
US8412872B1 (en) 2005-12-12 2013-04-02 Nvidia Corporation Configurable GPU and method for graphics processing using a configurable GPU
US7589545B2 (en) * 2006-03-01 2009-09-15 Atmel Germany Gmbh Device for final inspection
DE102006009321A1 (de) * 2006-03-01 2007-09-06 Atmel Germany Gmbh Vorrichtung für die Endmesstechnik
WO2007106759A2 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Method to reduce cross talk in a multi column e-beam test system
DE102006018474A1 (de) * 2006-04-19 2007-10-25 Infineon Technologies Ag Testvorrichtung für Halbleiterelemente auf einem Halbleiterwafer sowie ein Testverfahren unter Verwendung der Testvorrichtung
US8322299B2 (en) * 2006-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster processing apparatus for metallization processing in semiconductor manufacturing
US7602199B2 (en) 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US7786742B2 (en) 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
WO2008127541A1 (en) * 2007-03-22 2008-10-23 Johnson Morgan T Fully tested wafers having bond pads undamaged by probing and applications thereof
DE102007016553A1 (de) * 2007-04-05 2008-10-09 Qimonda Ag Vorrichtung und Verfahren zur elektrischen Kontaktierung von Halbleiter-Bauelementen auf einem Wafer
US8724483B2 (en) 2007-10-22 2014-05-13 Nvidia Corporation Loopback configuration for bi-directional interfaces
US8453019B2 (en) * 2007-11-06 2013-05-28 Nvidia Corporation Method and system for a free running strobe tolerant interface
US7888951B2 (en) * 2009-02-10 2011-02-15 Qualitau, Inc. Integrated unit for electrical/reliability testing with improved thermal control
US8063656B1 (en) * 2009-03-13 2011-11-22 Xilinx, Inc. Method of enabling a circuit board analysis
CN101793925B (zh) * 2009-12-28 2012-11-21 苏州工业园区泰格电子科技有限公司 老化测试台的导电件
US9331869B2 (en) * 2010-03-04 2016-05-03 Nvidia Corporation Input/output request packet handling techniques by a device specific kernel mode driver
TWI407125B (zh) * 2011-02-18 2013-09-01 Chroma Ate Inc 一種電子元件測試系統及其切換裝置
US8701511B2 (en) 2011-03-22 2014-04-22 International Business Machines Corporation Inert gas delivery system for electrical inspection apparatus
US8547122B2 (en) * 2011-07-11 2013-10-01 Microchip Technology Incorporated Temperature measurement of active device under test on strip tester
US20130266904A1 (en) * 2012-04-04 2013-10-10 James Martin Lip Rolling Machine With Rotated Oven Guide Bar
JP6076695B2 (ja) * 2012-10-30 2017-02-08 株式会社日本マイクロニクス 検査ユニット、プローブカード、検査装置及び検査装置の制御システム
CN103811087B (zh) * 2012-11-14 2016-08-17 中国广核集团有限公司 一种核电站仪控设备的老化控制方法和装置
CN102944707A (zh) * 2012-11-21 2013-02-27 成都市中州半导体科技有限公司 探针保护系统及方法
US10295591B2 (en) * 2013-01-02 2019-05-21 Texas Instruments Incorporated Method and device for testing wafers
CN103969945B (zh) * 2013-01-25 2018-08-24 上海微电子装备（集团）股份有限公司 刮伤掩模修补装置及方法
EP3062117B1 (en) 2013-06-14 2018-03-28 Rasco GmbH Method of contacting integrated circuit components in a test system
DE102014100542A1 (de) * 2014-01-20 2015-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht
US9658949B2 (en) * 2014-02-14 2017-05-23 Samsung Electronics Co., Ltd. Test system of system on chip and test method thereof
KR102104346B1 (ko) * 2014-03-28 2020-06-01 에스케이하이닉스 주식회사 테스트 보드 및 이를 구비하는 반도체 검사 장치
US9588142B2 (en) * 2014-10-24 2017-03-07 Advantest Corporation Electronic device handling apparatus and electronic device testing apparatus
US10373856B2 (en) * 2015-08-03 2019-08-06 Mikro Mesa Technology Co., Ltd. Transfer head array
US10345418B2 (en) * 2015-11-20 2019-07-09 Teradyne, Inc. Calibration device for automatic test equipment
JP2019062138A (ja) * 2017-09-28 2019-04-18 東京エレクトロン株式会社 検査システムおよび検査方法
CN108198912B (zh) * 2018-02-24 2020-01-31 常州亿晶光电科技有限公司 太阳能电池自动分片设备
US11016117B2 (en) * 2018-08-31 2021-05-25 Honeywell International Inc. Air data probe replacement determination system
CN109545722B (zh) * 2018-12-11 2019-08-20 上海精测半导体技术有限公司 半导体生产系统及其量测系统和量测设备
SG10202006567TA (en) 2019-07-08 2021-02-25 Aem Singapore Pte Ltd Compact tester
US11293974B2 (en) * 2019-09-27 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for semiconductor device testing
CN114424331B (zh) 2019-11-15 2025-07-11 铠侠股份有限公司 存储器设备以及控制方法
US11221365B2 (en) 2020-03-11 2022-01-11 Teradyne, Inc. Calibrating an interface board
US12326376B1 (en) * 2022-12-21 2025-06-10 Hrl Laboratories, Llc Spike arrays for small displacement force measurement
CN115831800B (zh) * 2023-02-14 2023-05-05 青岛青软晶尊微电子科技有限公司 基于多元库的芯片生产工艺、装置及电子设备
CN118914829B (zh) * 2024-10-11 2024-12-10 山东民峰智能科技有限公司 一种碳化硅芯片连续检测装置

Family Cites Families (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108019A (en) * 1958-02-14 1963-10-22 Corning Glass Works Method of stabilizing the electrical resistance of a metal oxide film
US3405361A (en) * 1964-01-08 1968-10-08 Signetics Corp Fluid actuable multi-point microprobe for semiconductors
US3349677A (en) * 1964-12-14 1967-10-31 Xerox Corp Alpha numeric character printer
US3835530A (en) * 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3618201A (en) * 1968-02-19 1971-11-09 Hitachi Ltd Method of fabricating lsi circuits
US3702025A (en) * 1969-05-12 1972-11-07 Honeywell Inc Discretionary interconnection process
US3596228A (en) * 1969-05-29 1971-07-27 Ibm Fluid actuated contactor
US3644922A (en) * 1969-07-14 1972-02-22 Image Products Corp High-resolution fiber optic display and microfilm printer
DE2017615C3 (de) * 1970-04-13 1974-12-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Anordnung zum Schalten der Intensität gerichteter Lichtstrahlenbündel mit hohem Kontrast
GB1344262A (en) * 1970-06-01 1974-01-16 Rank Organisation Ltd Optical signalling
DE2047651C3 (de) * 1970-09-28 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Anordnung zur zweidimensional räumlichen und zeitlichen Modulation von kohärenten Lichtbündeln
FR2128937A5 (enExample) * 1971-03-09 1972-10-27 Ragonot Ets
US3710251A (en) * 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
US3812486A (en) * 1972-04-18 1974-05-21 Antolelic Ind Ltd Display having a photoconductor gas discharge control
US3786499A (en) * 1972-11-16 1974-01-15 Fairchild Camera Instr Co Alpha-numeric display package
GB1464001A (en) * 1973-03-07 1977-02-09 Buchert C Data display panels
US3909823A (en) * 1974-03-26 1975-09-30 Keith L Knowlton An optical fiber variable display system utilizing a single light source
US4038599A (en) * 1974-12-30 1977-07-26 International Business Machines Corporation High density wafer contacting and test system
US4088490A (en) * 1976-06-14 1978-05-09 International Business Machines Corporation Single level masking process with two positive photoresist layers
US4070565A (en) * 1976-08-18 1978-01-24 Zehntel, Inc. Programmable tester method and apparatus
US4103297A (en) * 1976-12-20 1978-07-25 Hughes Aircraft Company Light-insensitive matrix addressed liquid crystal display system
US4115736A (en) * 1977-03-09 1978-09-19 The United States Of America As Represented By The Secretary Of The Air Force Probe station
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
US4263594A (en) * 1978-06-19 1981-04-21 Izon Corporation Electro-optical display design
US4257041A (en) * 1978-06-19 1981-03-17 Izon Corporation Electro optical display device
US4231464A (en) * 1979-01-15 1980-11-04 Kockum Industries, Inc. Conveyor with laterally adjustable flights
US4352061A (en) * 1979-05-24 1982-09-28 Fairchild Camera & Instrument Corp. Universal test fixture employing interchangeable wired personalizers
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
US4590422A (en) * 1981-07-30 1986-05-20 Pacific Western Systems, Inc. Automatic wafer prober having a probe scrub routine
JPS58157150A (ja) 1982-03-15 1983-09-19 Ricoh Co Ltd マスタスライス型半導体集積回路の製造方法
US4457662A (en) * 1982-03-25 1984-07-03 Pennwalt Corporation Automatic lead frame loading machine
US4465972A (en) * 1982-04-05 1984-08-14 Allied Corporation Connection arrangement for printed circuit board testing apparatus
US4585991A (en) 1982-06-03 1986-04-29 Texas Instruments Incorporated Solid state multiprobe testing apparatus
DE3235461A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur kontaktlosen pruefung eines objekts, insbesondere von mikroverdrahtungen, mit einer korpuskularstrahl-sonde
US4504783A (en) * 1982-09-30 1985-03-12 Storage Technology Partners Test fixture for providing electrical access to each I/O pin of a VLSI chip having a large number of I/O pins
US4480288A (en) 1982-12-27 1984-10-30 International Business Machines Corporation Multi-layer flexible film module
US4517051A (en) * 1982-12-27 1985-05-14 Ibm Corporation Multi-layer flexible film module
US4624358A (en) * 1983-03-07 1986-11-25 Tokyo Shibaura Denki Kabushiki Kaisha Device for transferring lead frame
US4564584A (en) * 1983-12-30 1986-01-14 Ibm Corporation Photoresist lift-off process for fabricating semiconductor devices
US4746855A (en) * 1984-03-14 1988-05-24 Teradyne, Inc. Relay multiplexing for circuit testers
US4649339A (en) * 1984-04-25 1987-03-10 Honeywell Inc. Integrated circuit interface
US4636722A (en) * 1984-05-21 1987-01-13 Probe-Rite, Inc. High density probe-head with isolated and shielded transmission lines
US4585727A (en) * 1984-07-27 1986-04-29 Probe-Tronics, Inc. Fixed point method and apparatus for probing semiconductor devices
US4617730A (en) * 1984-08-13 1986-10-21 International Business Machines Corporation Method of fabricating a chip interposer
JPS6167936A (ja) 1984-09-11 1986-04-08 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61168299A (ja) * 1985-01-21 1986-07-29 富士機械製造株式会社 プリント基板搬送位置決め装置
JPS61220454A (ja) 1985-03-27 1986-09-30 Toshiba Corp 半導体集積回路装置の製造方法
IT1201416B (it) 1985-04-24 1989-02-02 Montefluos Spa Perfluoropolieteri impiegati come fluidi per il testing nell'elettronica
US4719411A (en) * 1985-05-13 1988-01-12 California Institute Of Technology Addressable test matrix for measuring analog transfer characteristics of test elements used for integrated process control and device evaluation
DE3526485A1 (de) * 1985-07-24 1987-02-05 Heinz Krug Schaltungsanordnung zum pruefen integrierter schaltungseinheiten
US4791364A (en) * 1985-08-20 1988-12-13 Thermonics Incorporated Thermal fixture for testing integrated circuits
US4715928A (en) * 1985-09-27 1987-12-29 Hamby Bill L Flexible printed circuits and methods of fabricating and forming plated thru-holes therein
DE3665050D1 (en) * 1985-11-08 1989-09-21 Ciba Geigy Ag Conveyor for boards
US4853627A (en) * 1985-12-23 1989-08-01 Triquint Semiconductor, Inc. Wafer probes
US4776747A (en) * 1986-01-03 1988-10-11 Motorola Inc. High speed integrated circuit handler
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
US4895244A (en) * 1986-07-28 1990-01-23 Libbey-Owens-Ford Co. Apparatus for aligning glass sheets in a production line
KR880004322A (ko) 1986-09-05 1988-06-03 로버트 에스. 헐스 집적회로 프로브시스템
EP0259163A3 (en) 1986-09-05 1989-07-12 Tektronix, Inc. Semiconductor wafer probe
US4754867A (en) * 1986-09-19 1988-07-05 Zenith Electronics Corporation Automated belt drive for PC board feed apparatus
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US4764485A (en) * 1987-01-05 1988-08-16 General Electric Company Method for producing via holes in polymer dielectrics
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
JPH0192118A (ja) * 1987-10-01 1989-04-11 Sanyo Electric Co Ltd 基板搬送装置
USRE33836E (en) * 1987-10-22 1992-03-03 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
US4820976A (en) * 1987-11-24 1989-04-11 Advanced Micro Devices, Inc. Test fixture capable of electrically testing an integrated circuit die having a planar array of contacts
US4926118A (en) * 1988-02-22 1990-05-15 Sym-Tek Systems, Inc. Test station
FR2630588A1 (fr) * 1988-04-22 1989-10-27 Philips Nv Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee
US4926117A (en) * 1988-05-02 1990-05-15 Micron Technology, Inc. Burn-in board having discrete test capability
US5225771A (en) * 1988-05-16 1993-07-06 Dri Technology Corp. Making and testing an integrated circuit using high density probe points
US5020219A (en) * 1988-05-16 1991-06-04 Leedy Glenn J Method of making a flexible tester surface for testing integrated circuits
US5512397A (en) * 1988-05-16 1996-04-30 Leedy; Glenn J. Stepper scanner discretionary lithography and common mask discretionary lithography for integrated circuits
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
US4924589A (en) * 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
US5103557A (en) 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5323035A (en) 1992-10-13 1994-06-21 Glenn Leedy Interconnection structure for integrated circuits and method for making same
JPH0274022A (ja) 1988-09-09 1990-03-14 Matsushita Electric Ind Co Ltd 露光装置およびパターン形成方法
US4849689A (en) * 1988-11-04 1989-07-18 Cascade Microtech, Inc. Microwave wafer probe having replaceable probe tip
JPH02224358A (ja) 1989-02-27 1990-09-06 Mitsubishi Electric Corp 半導体装置の製造方法
JPH02237047A (ja) 1989-03-09 1990-09-19 Mitsubishi Electric Corp 半導体試験装置
US4983250A (en) * 1989-06-16 1991-01-08 Microelectronics And Computer Technology Method of laser patterning an electrical interconnect
US5047711A (en) * 1989-08-23 1991-09-10 Silicon Connections Corporation Wafer-level burn-in testing of integrated circuits
US4968931A (en) * 1989-11-03 1990-11-06 Motorola, Inc. Apparatus and method for burning in integrated circuit wafers
US5012187A (en) * 1989-11-03 1991-04-30 Motorola, Inc. Method for parallel testing of semiconductor devices
DE4005956C1 (enExample) * 1990-02-26 1991-06-06 Siegfried Dipl.-Ing. Dr. 5135 Selfkant De Straemke
US5310410A (en) * 1990-04-06 1994-05-10 Sputtered Films, Inc. Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus
US5070297A (en) * 1990-06-04 1991-12-03 Texas Instruments Incorporated Full wafer integrated circuit testing device
JP3012853B2 (ja) * 1990-09-14 2000-02-28 株式会社富士通宮城エレクトロニクス 半導体試験装置のハンドラー
US5325052A (en) 1990-11-30 1994-06-28 Tokyo Electron Yamanashi Limited Probe apparatus
DE59202991D1 (de) * 1991-01-28 1995-08-31 Siemens Ag Vorrichtung zum Bestücken von Leiterplatten.
JPH07115113B2 (ja) 1991-03-04 1995-12-13 三菱製鋼株式会社 有機質粘結材系鋳物砂に含有される酸化鉄の再利用方法
EP0508707A1 (en) * 1991-04-12 1992-10-14 Texas Instruments Incorporated System for testing on-wafer devices
US5323107A (en) * 1991-04-15 1994-06-21 Hitachi America, Ltd. Active probe card
US5495179A (en) * 1991-06-04 1996-02-27 Micron Technology, Inc. Carrier having interchangeable substrate used for testing of semiconductor dies
JPH0528697A (ja) 1991-07-22 1993-02-05 Hitachi Ltd 光記録媒体内蔵カード
GB9116787D0 (en) 1991-08-01 1991-09-18 Secr Defence Article having an aerofoil section with a distensible expansion surface
JPH05110291A (ja) * 1991-10-14 1993-04-30 Japan Steel Works Ltd:The プリント基板加工装置のためのパレツト移送方法及び装置
ATE151314T1 (de) * 1991-11-13 1997-04-15 Ciba Geigy Ag Beschichtungsvorrichtung für platten
US5452509A (en) * 1992-01-21 1995-09-26 Yamaha Hatsudoki Kabushiki Kaisha Surface mounter
DE69322667D1 (de) 1992-02-18 1999-02-04 Elm Technology Corp Lithographie nach Bedarf für integrierte Schaltungen
JP2878899B2 (ja) * 1992-05-07 1999-04-05 三菱電機株式会社 薄板フレームの搬送及び位置決め方法、並びにその装置
JP3041809B2 (ja) * 1992-05-19 2000-05-15 株式会社新川 プッシャ手段
US5336992A (en) 1992-06-03 1994-08-09 Trw Inc. On-wafer integrated circuit electrical testing
JP3135378B2 (ja) * 1992-08-10 2001-02-13 ローム株式会社 半導体試験装置
JPH06151532A (ja) * 1992-11-13 1994-05-31 Tokyo Electron Yamanashi Kk プローブ装置
EP0615131A1 (en) * 1993-03-10 1994-09-14 Co-Operative Facility For Aging Tester Development Prober for semiconductor integrated circuit element wafer
JPH0792479B2 (ja) 1993-03-18 1995-10-09 東京エレクトロン株式会社 プローブ装置の平行度調整方法
KR100291109B1 (ko) * 1993-05-31 2001-06-01 히가시 데쓰로 반도체 웨이퍼의 버언 인 검사기능을 구비한 프로우브 검사 및 리페어장치, 및 반도체 웨이퍼의 버언 인 검사장치
JPH07115113A (ja) * 1993-08-25 1995-05-02 Nec Corp 半導体ウエハの試験装置および試験方法
KR100341531B1 (ko) 1993-11-02 2002-11-30 글렌제이.리디 집적회로용스테퍼스캐너리소그래피및공통마스크임의선택리소그래피
US5457380A (en) * 1994-05-11 1995-10-10 Genrad, Inc. Circuit-test fixture that includes shorted-together probes
US6577148B1 (en) * 1994-08-31 2003-06-10 Motorola, Inc. Apparatus, method, and wafer used for testing integrated circuits formed on a product wafer
SE516153C2 (sv) 1997-02-14 2001-11-26 Ericsson Telefon Ab L M Förfarande och anordning vid hopsvetsning av optiska fibrer
US5963027A (en) * 1997-06-06 1999-10-05 Cascade Microtech, Inc. Probe station having environment control chambers with orthogonally flexible lateral wall assembly
DE10060438B4 (de) * 2000-12-05 2004-09-09 Infineon Technologies Ag Testanordnung zum parallelen Test einer Mehrzahl von integrierten Schaltkreisen und Testverfahren

Also Published As

Publication number Publication date
WO1996041204A1 (en) 1996-12-19
KR19990022254A (ko) 1999-03-25
TW297145B (enExample) 1997-02-01
US6288561B1 (en) 2001-09-11
US6838896B2 (en) 2005-01-04
EP0832438A4 (en) 1998-09-09
EP0832438A1 (en) 1998-04-01
US20030151421A1 (en) 2003-08-14
CN1116613C (zh) 2003-07-30
US20040222809A1 (en) 2004-11-11
US5749698A (en) 1998-05-12
US6891387B2 (en) 2005-05-10
JPH11512231A (ja) 1999-10-19
CN1191019A (zh) 1998-08-19
US20020005729A1 (en) 2002-01-17

Similar Documents

Publication Publication Date Title
KR100424693B1 (ko) 집적회로처리시스템및집적회로처리방법
US7694246B2 (en) Test method for yielding a known good die
US7170091B2 (en) Probe look ahead: testing parts not currently under a probehead
US8466702B2 (en) Test system and substrate unit for testing
JPH11274252A (ja) 半導体装置の検査装置及びその検査方法
KR20020026852A (ko) 반도체 집적 회로 장치의 검사 장치 및 제조 방법
US20100244879A1 (en) Apparatus for mass die testing
KR20210128739A (ko) 반도체 소자 검사장치 및 이를 구비하는 자동 검사장비
JPH08340030A (ja) バーンイン装置およびバーンイン用ウエハトレイ
US20080246499A1 (en) System and method for the electrical contacting of semiconductor devices
CN100373167C (zh) 用于直接冷却有源电子部件的冷却组合件
JP2001356145A (ja) 試験済み電子部品の分類制御方法
US6372528B1 (en) Burn-in method and burn-in device
JP2008008895A (ja) 半導体デバイスの検査装置および半導体デバイスの検査方法
Farabow et al. US PATENT DOCUMENTS
US6900655B2 (en) Determination of whether integrated circuit is acceptable or not in wafer-level burn-in test
US7023227B1 (en) Apparatus for socketing and testing integrated circuits and methods of operating the same
KR100821095B1 (ko) 반도체 테스트장치 및 그 테스트방법
US20040073856A1 (en) Parametric testing for high pin count ASIC
WO2000057196A1 (en) Wafer probe card
CN120019290A (zh) 大规模独立测试器系统
KR20230151885A (ko) 시험 방법 및 제조 방법
JP2023161949A (ja) 試験方法、製造方法、パネルレベルパッケージおよび試験装置
JPH05211214A (ja) Ｉｃマーキング回路
Keezer et al. Test Techniques for Multichip Modules

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20070316

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20070316