KR100255592B1 - 액정 표시 장치 구조 및 그 제조 방법 - Google Patents

액정 표시 장치 구조 및 그 제조 방법 Download PDF

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Publication number
KR100255592B1
KR100255592B1 KR1019970009367A KR19970009367A KR100255592B1 KR 100255592 B1 KR100255592 B1 KR 100255592B1 KR 1019970009367 A KR1019970009367 A KR 1019970009367A KR 19970009367 A KR19970009367 A KR 19970009367A KR 100255592 B1 KR100255592 B1 KR 100255592B1
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KR
South Korea
Prior art keywords
layer
gate
source
pad
semiconductor layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019970009367A
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English (en)
Korean (ko)
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KR19980073827A (ko
Inventor
임경남
박재용
김정현
Original Assignee
구본준
엘지.필립스 엘시디주식회사
론 위라하디락사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 구본준, 엘지.필립스 엘시디주식회사, 론 위라하디락사 filed Critical 구본준
Priority to KR1019970009367A priority Critical patent/KR100255592B1/ko
Priority to US08/896,208 priority patent/US5883682A/en
Priority to GB9804168A priority patent/GB2323472B/en
Priority to FR9802398A priority patent/FR2761197B1/fr
Priority to JP05033298A priority patent/JP4364952B2/ja
Priority to DE19811624A priority patent/DE19811624B4/de
Publication of KR19980073827A publication Critical patent/KR19980073827A/ko
Application granted granted Critical
Publication of KR100255592B1 publication Critical patent/KR100255592B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1019970009367A 1997-03-19 1997-03-19 액정 표시 장치 구조 및 그 제조 방법 Expired - Lifetime KR100255592B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019970009367A KR100255592B1 (ko) 1997-03-19 1997-03-19 액정 표시 장치 구조 및 그 제조 방법
US08/896,208 US5883682A (en) 1997-03-19 1997-07-17 Structure of a liquid crystal display and method of manufacturing the same
GB9804168A GB2323472B (en) 1997-03-19 1998-02-26 Structure of a liquid crystal display and method of manufacturing same
FR9802398A FR2761197B1 (fr) 1997-03-19 1998-02-27 Afficheur a cristaux liquides et son procede de fabrication
JP05033298A JP4364952B2 (ja) 1997-03-19 1998-03-03 液晶表示装置の製造方法
DE19811624A DE19811624B4 (de) 1997-03-19 1998-03-17 Aktives Paneel für eine LCD und Herstellungsverfahren für ein aktives Paneel einer LCD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970009367A KR100255592B1 (ko) 1997-03-19 1997-03-19 액정 표시 장치 구조 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR19980073827A KR19980073827A (ko) 1998-11-05
KR100255592B1 true KR100255592B1 (ko) 2000-05-01

Family

ID=19500124

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970009367A Expired - Lifetime KR100255592B1 (ko) 1997-03-19 1997-03-19 액정 표시 장치 구조 및 그 제조 방법

Country Status (6)

Country Link
US (1) US5883682A (enExample)
JP (1) JP4364952B2 (enExample)
KR (1) KR100255592B1 (enExample)
DE (1) DE19811624B4 (enExample)
FR (1) FR2761197B1 (enExample)
GB (1) GB2323472B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3312083B2 (ja) 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JP3866783B2 (ja) 1995-07-25 2007-01-10 株式会社 日立ディスプレイズ 液晶表示装置
US5894136A (en) * 1996-01-15 1999-04-13 Lg Electronics Inc. Liquid crystal display having a bottom gate TFT switch having a wider active semiconductor layer than a conductive layer on same
US6275278B1 (en) 1996-07-19 2001-08-14 Hitachi, Ltd. Liquid crystal display device and method of making same
KR100244449B1 (ko) * 1997-02-11 2000-02-01 구본준 박막 트랜지스터 검사용 단락 배선을 갖는 액정 표시 장치와 그 제조 방법(liquid crystal display having shorting bar for testing tft and method for manufacturing the same)
US6949417B1 (en) * 1997-03-05 2005-09-27 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
TW375689B (en) * 1997-03-27 1999-12-01 Toshiba Corp Liquid crystal display device and method for manufacturing the same
JP3656076B2 (ja) * 1997-04-18 2005-06-02 シャープ株式会社 表示装置
KR100271039B1 (ko) * 1997-10-24 2000-11-01 구본준, 론 위라하디락사 액정표시장치의 기판의 제조방법(method of manufacturing liquid crystal display)
JPH11340462A (ja) * 1998-05-28 1999-12-10 Fujitsu Ltd 液晶表示装置およびその製造方法
US6900854B1 (en) * 1998-11-26 2005-05-31 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display
KR100532025B1 (ko) * 1998-12-04 2006-03-14 엘지.필립스 엘시디 주식회사 박막트랜지스터 광센서 및 그 제조방법_
JP4709816B2 (ja) * 1999-03-16 2011-06-29 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板の製造方法
KR100338011B1 (ko) * 1999-06-30 2002-05-24 윤종용 액정 표시 장치용 기판의 제조 방법
KR100333271B1 (ko) * 1999-07-05 2002-04-24 구본준, 론 위라하디락사 배선의 단락 및 단선 테스트를 위한 박막트랜지스터-액정표시장치의 어레이기판과 그 제조방법.
JP2001053283A (ja) * 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR100498630B1 (ko) 1999-09-01 2005-07-01 엘지.필립스 엘시디 주식회사 액정표시장치
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
JP2001324725A (ja) * 2000-05-12 2001-11-22 Hitachi Ltd 液晶表示装置およびその製造方法
US6734924B2 (en) * 2000-09-08 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR100720095B1 (ko) 2000-11-07 2007-05-18 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR100390456B1 (ko) * 2000-12-13 2003-07-07 엘지.필립스 엘시디 주식회사 액정 디스플레이 패널 및 그 제조방법
US7095460B2 (en) 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP2002258768A (ja) * 2001-03-02 2002-09-11 Seiko Epson Corp 電気光学装置、その製造方法および電子機器
KR100476046B1 (ko) * 2001-05-25 2005-03-10 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정표시장치
KR100443831B1 (ko) * 2001-12-20 2004-08-09 엘지.필립스 엘시디 주식회사 액정표시소자의 제조 방법
US7102168B2 (en) * 2001-12-24 2006-09-05 Samsung Electronics Co., Ltd. Thin film transistor array panel for display and manufacturing method thereof
KR100869736B1 (ko) * 2001-12-29 2008-11-21 엘지디스플레이 주식회사 액정표시소자 및 그의 제조방법
KR100853219B1 (ko) * 2002-03-22 2008-08-20 삼성전자주식회사 표시 장치용 박막 트랜지스터 어레이 기판의 제조 방법
KR100859521B1 (ko) * 2002-07-30 2008-09-22 삼성전자주식회사 박막 트랜지스터 어레이 기판
TW560076B (en) * 2002-09-27 2003-11-01 Chi Mei Optoelectronics Corp Structure and manufacturing method of thin film transistor
JP3880568B2 (ja) * 2002-10-25 2007-02-14 鹿児島日本電気株式会社 液晶表示装置の製造方法
KR100498543B1 (ko) 2002-11-07 2005-07-01 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR101034181B1 (ko) * 2003-08-21 2011-05-12 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
JP4737971B2 (ja) * 2003-11-14 2011-08-03 株式会社半導体エネルギー研究所 液晶表示装置および液晶表示装置の作製方法
TWI234043B (en) * 2003-11-26 2005-06-11 Hannstar Display Corp Method of manufacturing liquid crystal display
US7223641B2 (en) * 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
KR101016284B1 (ko) * 2004-04-28 2011-02-22 엘지디스플레이 주식회사 Ｃｏｇ 방식 액정표시소자 및 그 제조방법
JP4628040B2 (ja) * 2004-08-20 2011-02-09 株式会社半導体エネルギー研究所 半導体素子を備えた表示装置の製造方法
KR101200883B1 (ko) 2005-12-13 2012-11-13 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판의 제조 방법
KR101232063B1 (ko) * 2006-08-16 2013-02-12 삼성디스플레이 주식회사 표시 기판의 제조 방법
CN102034751B (zh) * 2009-09-24 2013-09-04 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
KR101908113B1 (ko) * 2009-11-16 2018-10-15 삼성전자 주식회사 전기활성 폴리머 엑츄에이터 및 그 제조방법
JP5604087B2 (ja) * 2009-11-27 2014-10-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2012134519A (ja) * 2012-02-13 2012-07-12 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014021170A (ja) * 2012-07-12 2014-02-03 Panasonic Liquid Crystal Display Co Ltd 液晶表示装置及びその製造方法
JP2014212337A (ja) * 2014-06-30 2014-11-13 株式会社半導体エネルギー研究所 半導体装置
CN110941124B (zh) * 2019-12-02 2021-06-01 Tcl华星光电技术有限公司 一种阵列基板、阵列基板制程方法及显示面板

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JPH0714701A (ja) * 1993-06-28 1995-01-17 Alps Electric Co Ltd 抵抗体及びその製造方法

Also Published As

Publication number Publication date
DE19811624A1 (de) 1998-09-24
GB2323472A (en) 1998-09-23
JPH10270710A (ja) 1998-10-09
KR19980073827A (ko) 1998-11-05
FR2761197A1 (fr) 1998-09-25
US5883682A (en) 1999-03-16
GB9804168D0 (en) 1998-04-22
FR2761197B1 (fr) 2002-11-08
JP4364952B2 (ja) 2009-11-18
DE19811624B4 (de) 2004-07-29
GB2323472B (en) 2000-03-22

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