JPWO2019138654A1 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 35
- 239000007789 gas Substances 0.000 claims abstract description 174
- 238000000034 method Methods 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 31
- 238000001020 plasma etching Methods 0.000 claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 55
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims description 14
- 239000003507 refrigerant Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- 239000002826 coolant Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000112 cooling gas Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 4
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 163
- 239000000758 substrate Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 8
- 239000001307 helium Substances 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- -1 Bromine radicals Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005513 bias potential Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
処理室40の内部でHBr、CH3F、及び窒素含有ガスを含んだ処理ガス(プロセスガス)に上部電極4から高周波電力を印加してプラズマ11を形成すると、プラズマ11中で窒素、水素、臭素のラジカルが生成される。この状態において、試料3の表面が20℃程度の低温に冷却されている場合に、プラズマ11中で生成されたラジカルのうち試料3の表面に付着したラジカルは、試料3の表面に化合物としてNH4Br(臭化アンモニウム)を形成する。試料3の表面に形成された化合物の臭化アンモニウムは交互積層膜205のエッチングを促進する効果があるため、エッチングレートが向上する。
シャワープレート、6…ガス導入ライン、7…上部電極用冷媒流路、8…放
電用高周波電源、9…放電用高周波電力整合器、10…真空容器、11…プ
ラズマ、12…上部電極絶縁体、13…絶縁リング、14…静電吸着膜、1
5…タングステン電極、16…低域通過フィルタ、17…直流電源、18…
ヘリウム供給手段、19…冷媒流路、20…バイアス用高周波電源、21…
バイアス用高周波電力整合器、22…絶縁板、23…絶縁層、24…遮蔽板
、25…サセプタリング、27…給電経路、29…導電板、30…ガス通過
孔、32…素子、35…温度計測器、40…処理室、44…圧力調整バルブ
、45…排気部、50…プラズマ形成部、70…制御部、100…プラズマ
処理装置、191…温度制御装置、201…シリコンウェハ基板、202…
ストッパー膜、203…多結晶シリコン膜、204…シリコン酸化膜、205…交互積層膜、206…ハードマスク膜、207…反射防止膜、208…
レジスト膜、212…孔パターン。
Claims (16)
- シリコン酸化膜と多結晶シリコンが交互に積層された第一の積層膜またはシリコン酸化膜とシリコン窒化膜が交互に積層された第二の積層膜をプラズマを用いてエッチングするプラズマ処理方法において、
臭化水素ガスとハイドロフルオロカーボンガスと窒素元素含有ガスの混合ガスを用いて前記第一の積層膜または前記第二の積層膜をエッチングすることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記ハイドロフルオロカーボンガスは、フルオロメタン(CH3F)ガスであることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記窒素元素含有ガスは、窒素ガスであることを特徴とするプラズマ処理方法。 - 請求項2に記載のプラズマ処理方法において、
前記窒素元素含有ガスは、窒素ガスであることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記第一の積層膜または前記第二の積層膜が成膜された試料を所定の温度にしてエッチングし、
前記所定の温度は、前記第一の積層膜または前記第二の積層膜の表面への臭化アンモニウムの形成を促進する温度であることを特徴とするプラズマ処理方法。 - 請求項2に記載のプラズマ処理方法において、
前記第一の積層膜または前記第二の積層膜が成膜された試料を所定の温度にしてエッチングし、
前記所定の温度は、前記第一の積層膜または前記第二の積層膜の表面への臭化アンモニウムの形成を促進する温度であることを特徴とするプラズマ処理方法。 - 請求項5または請求項6に記載のプラズマ処理方法において、
前記所定の温度は、20℃以下であることを特徴とするプラズマ処理方法。 - シリコン酸化膜と多結晶シリコンが交互に積層された積層膜をプラズマを用いてエッチングするプラズマ処理方法において、
臭化水素ガスとフルオロメタン(CH3F)ガスと窒素ガスの混合ガスを用いて前記積層膜をエッチングすることを特徴とするプラズマ処理方法。 - シリコン酸化膜とシリコン窒化膜が交互に積層された積層膜をプラズマを用いてエッチングするプラズマ処理方法において、
臭化水素ガスとフルオロメタン(CH3F)ガスと窒素ガスの混合ガスを用いて前記積層膜をエッチングすることを特徴とするプラズマ処理方法。 - 請求項8または請求項9に記載のプラズマ処理方法において、
前記積層膜が成膜された試料を所定の温度にしてエッチングし、
前記所定の温度は、前記積層膜の表面への臭化アンモニウムの形成を促進する温度であることを特徴とするプラズマ処理方法。 - 請求項10に記載のプラズマ処理方法において、
前記所定の温度は、20℃以下であることを特徴とするプラズマ処理方法。 - シリコン酸化膜と多結晶シリコンが交互に積層された積層膜またはシリコン酸化膜とシリコン窒化膜が交互に積層された積層膜をプラズマを用いてエッチングするプラズマ処理方法において、
フルオロメタン(CH3F)ガスと窒素ガスと塩素ガスの混合ガスまたはフルオロメタン(CH3F)ガスと窒素ガスと三塩化ホウ素(BCl3)ガスの混合ガスを用いて前記積層膜をエッチングすることを特徴とするプラズマ処理方法。 - シリコン酸化膜と金属膜が交互に積層された積層膜をプラズマを用いてエッチングするプラズマ処理方法において、
臭化水素ガスとフルオロメタン(CH3F)ガスと窒素元素含有ガスの混合ガスを用いて前記積層膜をエッチングすることを特徴とするプラズマ処理方法。 - 請求項8ないし請求項13のいずれか一項に記載のプラズマ処理方法において、
前記積層膜のエッチングは、3−D NANDフラッシュメモリの製造に係るエッチングであることを特徴とするプラズマ処理方法。 - 試料がプラズマ処理される処理室と、プラズマを生成するための高周波電力を供給する第一の高周波電源と、前記試料が載置される試料台と、前記試料台に高周波電力を供給する第二の高周波電源とを備えるプラズマ処理装置において、
臭化水素ガスとハイドロフルオロカーボンガスと窒素元素含有ガスの混合ガスにより生成されたプラズマを用いてシリコン酸化膜と多結晶シリコンが交互に積層された積層膜またはシリコン酸化膜とシリコン窒化膜が交互に積層された積層膜をエッチングするように前記第一の高周波電源と前記第二の高周波電源を制御する制御部をさらに備えることを特徴とするプラズマ処理装置。 - 処理室と、
前記処理室の内部で上方に配置された上部電極と、
前記上部電極と対向して前記処理室の内部で下方に配置されて被処理試料を載置する試料台と、
前記処理室の内部にエッチングガスを供給するガス供給部と、
前記上部電極に高周波電力を印加する高周波電力印加部と、
前記試料台の温度を計測する温度計測部と、
前記試料台に載置した前記被処理試料と前記試料台との間に冷却ガスを供給する冷却ガス供給部と、
前記試料台の内部に形成された流路に温度制御された冷媒を流通さる冷媒流通部と、
前記ガス供給部と前記高周波電力印加部と前記冷却ガス供給部と前記冷媒流通部とを制御する制御部と
備えたプラズマ処理装置であって、
前記制御部は、前記ガス供給部と前記高周波電力印加部とを制御して前記処理室の内部にプラズマを発生させて前記試料台に載置した前記被処理試料をプラズマエッチング処理しているときに、前記温度計測部で計測した前記試料台の温度情報に基づいて、予め記憶されている前記試料台の温度と前記試料台に載置された前記被処理試料の温度の関係から、前記冷却ガス供給部と前記冷媒流通部とを制御して前記プラズマエッチング処理中の前記被処理試料の温度を予め設定した温度に維持し、
前記ガス供給部は、前記エッチングガスとして、前記制御部で制御されて前記予め設定した温度に維持されている前記被処理試料の表面に前記被処理試料の前記プラズマエッチング処理を促進する効果を有する化合物を形成するような混合ガスを前記処理室の内部に供給することを特徴とするプラズマ処理装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09298192A (ja) * | 1996-03-04 | 1997-11-18 | Sony Corp | 半導体装置の製造装置および静電チャックからのウエハ脱着方法 |
JP2005050917A (ja) * | 2003-07-30 | 2005-02-24 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2015012178A (ja) * | 2013-06-28 | 2015-01-19 | 東京エレクトロン株式会社 | プラズマエッチング方法およびプラズマエッチング装置 |
JP2015119099A (ja) * | 2013-12-19 | 2015-06-25 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP2016039309A (ja) * | 2014-08-08 | 2016-03-22 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
JP2017050529A (ja) * | 2015-08-12 | 2017-03-09 | セントラル硝子株式会社 | ドライエッチング方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5112435A (en) | 1985-10-11 | 1992-05-12 | Applied Materials, Inc. | Materials and methods for etching silicides, polycrystalline silicon and polycides |
JPH0744173B2 (ja) | 1985-10-11 | 1995-05-15 | アプライド マテリアルズ インコ−ポレ−テツド | シリサイド、多結晶シリコン及びポリサイドのエッチング方法 |
US6063710A (en) | 1996-02-26 | 2000-05-16 | Sony Corporation | Method and apparatus for dry etching with temperature control |
JP3484317B2 (ja) * | 1997-03-19 | 2004-01-06 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JPH11297679A (ja) | 1998-02-13 | 1999-10-29 | Hitachi Ltd | 試料の表面処理方法および装置 |
KR100521120B1 (ko) | 1998-02-13 | 2005-10-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자의 표면처리방법 및 장치 |
JP4414518B2 (ja) | 1999-09-10 | 2010-02-10 | 株式会社日立製作所 | 表面処理装置 |
US6692903B2 (en) * | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
JP3914452B2 (ja) * | 2001-08-07 | 2007-05-16 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP3816494B2 (ja) | 2004-01-16 | 2006-08-30 | 松下電器産業株式会社 | ドライエッチング方法および半導体装置の製造方法 |
US20060011580A1 (en) * | 2004-06-23 | 2006-01-19 | Tokyo Electron Limited | Plasma processing method and post-processing method |
US7316785B2 (en) * | 2004-06-30 | 2008-01-08 | Lam Research Corporation | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
JP4534664B2 (ja) * | 2004-08-24 | 2010-09-01 | ソニー株式会社 | 磁気記憶装置の製造方法 |
KR20100048731A (ko) * | 2008-10-31 | 2010-05-11 | 삼성전자주식회사 | AlO 마스크를 이용한 반도체소자의 제조방법 |
JP5655296B2 (ja) * | 2009-12-01 | 2015-01-21 | セントラル硝子株式会社 | エッチングガス |
JP2011192776A (ja) | 2010-03-15 | 2011-09-29 | Toshiba Corp | 半導体装置の製造方法 |
KR101809192B1 (ko) | 2011-12-16 | 2017-12-15 | 에스케이하이닉스 주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR20130106151A (ko) | 2012-03-19 | 2013-09-27 | 에스케이하이닉스 주식회사 | 고종횡비 캐패시터 제조 방법 |
KR101972159B1 (ko) | 2012-08-24 | 2019-08-16 | 에스케이하이닉스 주식회사 | 실리콘함유하드마스크를 구비한 반도체장치 및 그 제조 방법 |
JP6153755B2 (ja) | 2013-04-03 | 2017-06-28 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6211947B2 (ja) * | 2013-07-31 | 2017-10-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6277004B2 (ja) | 2014-01-31 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
JP6230930B2 (ja) * | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6289996B2 (ja) * | 2014-05-14 | 2018-03-07 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
JP6604833B2 (ja) | 2015-12-03 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
JP6870490B2 (ja) | 2017-06-20 | 2021-05-12 | コニカミノルタ株式会社 | 2成分現像剤及びこれを用いた画像形成方法 |
US10276398B2 (en) | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
JP6953999B2 (ja) | 2017-10-26 | 2021-10-27 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び基板処理装置 |
US11270889B2 (en) | 2018-06-04 | 2022-03-08 | Tokyo Electron Limited | Etching method and etching apparatus |
-
2018
- 2018-10-26 WO PCT/JP2018/039866 patent/WO2019138654A1/ja active Application Filing
- 2018-10-26 JP JP2019528937A patent/JP6778822B2/ja active Active
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- 2018-10-26 CN CN201880005229.0A patent/CN111373511B/zh active Active
- 2018-10-26 US US16/482,106 patent/US11532484B2/en active Active
-
2019
- 2019-06-24 TW TW108121957A patent/TWI751423B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09298192A (ja) * | 1996-03-04 | 1997-11-18 | Sony Corp | 半導体装置の製造装置および静電チャックからのウエハ脱着方法 |
JP2005050917A (ja) * | 2003-07-30 | 2005-02-24 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2015012178A (ja) * | 2013-06-28 | 2015-01-19 | 東京エレクトロン株式会社 | プラズマエッチング方法およびプラズマエッチング装置 |
JP2015119099A (ja) * | 2013-12-19 | 2015-06-25 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP2016039309A (ja) * | 2014-08-08 | 2016-03-22 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
JP2017050529A (ja) * | 2015-08-12 | 2017-03-09 | セントラル硝子株式会社 | ドライエッチング方法 |
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