JPWO2019106843A1 - 半導体装置の製造方法、半導体装置 - Google Patents
半導体装置の製造方法、半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 230000007704 transition Effects 0.000 claims abstract description 84
- 230000004888 barrier function Effects 0.000 claims abstract description 61
- 239000002994 raw material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る半導体装置の断面図である。実施の形態1に係る半導体装置はIII-V族窒化物半導体エピタキシャルウェハである。このIII-V族窒化物半導体エピタキシャルウェハは、例えば高電子移動度トランジスタ(HEMT:high electron mobility transistor)を製造するためのエピタキシャルウェハである。
実施の形態2に係る半導体装置の製造方法と半導体装置は、実施の形態1との共通点が多いので、実施の形態1との相違点を中心に説明する。図6は、実施の形態2に係るバリア層16の形成からキャップ層18の形成までのシーケンスを示すタイミングチャートである。バリア層16の成長後、炉内圧力を増大させてから遷移層17を形成する。バリア層16の成長後の時刻t2からt3までの期間は成長中断期間である。この成長中断期間中に炉内圧力を上昇させ、遷移層17成長時とキャップ層18成長時の成長圧力を、バリア層16成長時の成長圧力よりも大きくする。つまり、炉内圧力を増大させる。
Claims (16)
- チャネル層の上にInAlNまたはInAlGaNでバリア層を形成することと、
成長温度を上げながら前記バリア層の上にInGaNで遷移層を形成することと、
前記遷移層の上にGaNでキャップ層を形成することと、を備えたことを特徴とする半導体装置の製造方法。 - In原料の供給量を減らしながら前記遷移層を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記バリア層の成長後、炉内圧力を増大させてから前記遷移層を形成することを特徴とする請求項1または2に記載の半導体装置の製造方法。
- N原料の供給量を減らしながら前記遷移層を形成することを特徴とする請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- Ga原料の供給量を増やしながら前記遷移層を形成することを特徴とする請求項1から4のいずれか1項に記載の半導体装置の製造方法。
- 前記バリア層の成長圧力は25mbar以上、100mbar以下であることを特徴とする請求項1から5のいずれか1項に記載の半導体装置の製造方法。
- 前記キャップ層の成長圧力は150mbar以上、400mbar以下であることを特徴とする請求項1から6のいずれか1項に記載の半導体装置の製造方法。
- 前記遷移層の成長圧力は150mbar以上、400mbar以下であることを特徴とする請求項1から7のいずれか1項に記載の半導体装置の製造方法。
- 基板と、
前記基板の上方に形成されたチャネル層と、
前記チャネル層の上に形成された、InAlNまたはInAlGaNのバリア層と、
前記バリア層の上に形成されたInGaNの遷移層と、
前記遷移層の上にGaNで形成されたキャップ層と、を備え、
前記遷移層の組成は、0より大きく1より小さいxを用いてInxGa1-xNで表され、前記xは前記キャップ層に近い位置ほど小さい値となることを特徴とする半導体装置。 - 前記バリア層のC濃度よりも前記キャップ層のC濃度が低いことを特徴とする請求項9に記載の半導体装置。
- 前記バリア層のC濃度よりも前記遷移層のC濃度が低いことを特徴とする請求項9または10に記載の半導体装置。
- 前記遷移層のC濃度よりも前記キャップ層のC濃度が低いことを特徴とする請求項10または11に記載の半導体装置。
- 前記キャップ層のC濃度は5×1016[cm-3]以下であることを特徴とする請求項9から12のいずれか1項に記載の半導体装置。
- 前記遷移層のC濃度は1×1017[cm-3]以下であることを特徴とする請求項9から13のいずれか1項に記載の半導体装置。
- 前記遷移層の膜厚は0.5nm以上かつ3nm以下であることを特徴とする請求項9から14のいずれか1項に記載の半導体装置。
- 前記キャップ層の上に設けられたゲート電極と、
前記キャップ層の上に設けられたソース電極と、
前記キャップ層の上に設けられたドレイン電極と、を備え、
前記バリア層のバンドギャップは前記チャネル層のバンドギャップより大きく、
高電子移動度トランジスタを構成することを特徴とする請求項9から15のいずれか1項に記載の半導体装置。
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CN110643934A (zh) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | 一种半导体设备 |
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KR102293962B1 (ko) | 2021-08-25 |
CN111406306A (zh) | 2020-07-10 |
US20200243668A1 (en) | 2020-07-30 |
US11444172B2 (en) | 2022-09-13 |
CN111406306B (zh) | 2024-03-12 |
DE112017008243T5 (de) | 2020-08-13 |
JP6841344B2 (ja) | 2021-03-10 |
KR20200066726A (ko) | 2020-06-10 |
WO2019106843A1 (ja) | 2019-06-06 |
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