CN113659006A - 一种基于第三代半导体GaN材料的HEMT外延器件及其生长方法 - Google Patents
一种基于第三代半导体GaN材料的HEMT外延器件及其生长方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- 229910002601 GaN Inorganic materials 0.000 claims description 109
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 98
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 98
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 90
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims description 24
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 230000003247 decreasing effect Effects 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 178
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 106
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 230000005533 two-dimensional electron gas Effects 0.000 description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- FFEARJCKVFRZRR-UHFFFAOYSA-N methionine Chemical compound CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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CN101399284A (zh) * | 2007-09-26 | 2009-04-01 | 中国科学院半导体研究所 | 氮化镓基高电子迁移率晶体管结构 |
JP2012084662A (ja) * | 2010-10-08 | 2012-04-26 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
CN102664188A (zh) * | 2012-05-10 | 2012-09-12 | 电子科技大学 | 一种具有复合缓冲层的氮化镓基高电子迁移率晶体管 |
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KR20150012119A (ko) * | 2013-07-24 | 2015-02-03 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
CN104885198A (zh) * | 2013-01-04 | 2015-09-02 | 同和电子科技有限公司 | Iii族氮化物外延基板以及其的制造方法 |
CN108899365A (zh) * | 2018-05-30 | 2018-11-27 | 厦门市三安集成电路有限公司 | 高阻GaN基缓冲层外延结构及其制备方法 |
US20190109208A1 (en) * | 2016-12-31 | 2019-04-11 | South China University Of Technology | Enhancement-mode gan-based hemt device on si substrate and manufacturing method thereof |
CN109830536A (zh) * | 2018-12-20 | 2019-05-31 | 厦门市三安集成电路有限公司 | 包含多量子阱结构复合缓冲层的高阻缓冲层及制备方法 |
CN112701160A (zh) * | 2020-12-09 | 2021-04-23 | 华灿光电(浙江)有限公司 | 氮化镓基高电子迁移率晶体管外延片及其制备方法 |
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2021
- 2021-08-05 CN CN202110897699.6A patent/CN113659006B/zh active Active
Patent Citations (13)
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CN101136432A (zh) * | 2006-09-01 | 2008-03-05 | 中国科学院半导体研究所 | 宽带隙氮化镓基异质结场效应晶体管结构及制作方法 |
CN101399284A (zh) * | 2007-09-26 | 2009-04-01 | 中国科学院半导体研究所 | 氮化镓基高电子迁移率晶体管结构 |
JP2012084662A (ja) * | 2010-10-08 | 2012-04-26 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
CN102664188A (zh) * | 2012-05-10 | 2012-09-12 | 电子科技大学 | 一种具有复合缓冲层的氮化镓基高电子迁移率晶体管 |
CN103579326A (zh) * | 2012-08-03 | 2014-02-12 | 电子科技大学 | 一种具有纵向复合缓冲层的氮化镓基高电子迁移率晶体管 |
CN104885198A (zh) * | 2013-01-04 | 2015-09-02 | 同和电子科技有限公司 | Iii族氮化物外延基板以及其的制造方法 |
JP2014222730A (ja) * | 2013-05-14 | 2014-11-27 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハ |
KR20150012119A (ko) * | 2013-07-24 | 2015-02-03 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
CN104241352A (zh) * | 2014-09-26 | 2014-12-24 | 中国科学院半导体研究所 | 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法 |
US20190109208A1 (en) * | 2016-12-31 | 2019-04-11 | South China University Of Technology | Enhancement-mode gan-based hemt device on si substrate and manufacturing method thereof |
CN108899365A (zh) * | 2018-05-30 | 2018-11-27 | 厦门市三安集成电路有限公司 | 高阻GaN基缓冲层外延结构及其制备方法 |
CN109830536A (zh) * | 2018-12-20 | 2019-05-31 | 厦门市三安集成电路有限公司 | 包含多量子阱结构复合缓冲层的高阻缓冲层及制备方法 |
CN112701160A (zh) * | 2020-12-09 | 2021-04-23 | 华灿光电(浙江)有限公司 | 氮化镓基高电子迁移率晶体管外延片及其制备方法 |
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