JPS6361388B2 - - Google Patents
Info
- Publication number
- JPS6361388B2 JPS6361388B2 JP53129430A JP12943078A JPS6361388B2 JP S6361388 B2 JPS6361388 B2 JP S6361388B2 JP 53129430 A JP53129430 A JP 53129430A JP 12943078 A JP12943078 A JP 12943078A JP S6361388 B2 JPS6361388 B2 JP S6361388B2
- Authority
- JP
- Japan
- Prior art keywords
- fluorine
- tin
- compound
- gas
- organotin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052731 fluorine Inorganic materials 0.000 claims description 79
- 239000011737 fluorine Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 55
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 51
- 239000007789 gas Substances 0.000 claims description 46
- 150000001875 compounds Chemical class 0.000 claims description 37
- 239000002019 doping agent Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 20
- 229910001887 tin oxide Inorganic materials 0.000 claims description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 13
- 150000003606 tin compounds Chemical class 0.000 claims description 13
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 7
- -1 fluoride compound Chemical class 0.000 claims description 7
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000008246 gaseous mixture Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 239000003574 free electron Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 claims description 4
- GSYNTTDHMKSMFY-UHFFFAOYSA-N chloro(pentafluoro)-$l^{6}-sulfane Chemical compound FS(F)(F)(F)(F)Cl GSYNTTDHMKSMFY-UHFFFAOYSA-N 0.000 claims description 3
- ZHMUANACXUSCMY-UHFFFAOYSA-N trimethyl(trifluoromethyl)stannane Chemical compound C[Sn](C)(C)C(F)(F)F ZHMUANACXUSCMY-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- QIYZKVMAFMDRTP-UHFFFAOYSA-N pentafluoro(trifluoromethyl)-$l^{6}-sulfane Chemical compound FC(F)(F)S(F)(F)(F)(F)F QIYZKVMAFMDRTP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 2
- 239000011630 iodine Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- HAJHWZJFYVOKED-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)stannane Chemical compound C[Sn](C)(C)C(F)(F)C(F)(F)F HAJHWZJFYVOKED-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 51
- 239000010410 layer Substances 0.000 description 26
- 239000011521 glass Substances 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000009972 noncorrosive effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008707 rearrangement Effects 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- QXDJFNYEWKDJJA-UHFFFAOYSA-N dimethylstannane Chemical compound C[SnH2]C QXDJFNYEWKDJJA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 2
- 239000003039 volatile agent Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 240000007591 Tilia tomentosa Species 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229940121363 anti-inflammatory agent Drugs 0.000 description 1
- 239000002260 anti-inflammatory agent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- LHFAOGJOEFXRQH-UHFFFAOYSA-N bromo(pentafluoro)-$l^{6}-sulfane Chemical compound FS(F)(F)(F)(F)Br LHFAOGJOEFXRQH-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- QTJXVIKNLHZIKL-UHFFFAOYSA-N sulfur difluoride Chemical group FSF QTJXVIKNLHZIKL-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- DFNPRTKVCGZMMC-UHFFFAOYSA-M tributyl(fluoro)stannane Chemical compound CCCC[Sn](F)(CCCC)CCCC DFNPRTKVCGZMMC-UHFFFAOYSA-M 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/84—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Geochemistry & Mineralogy (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
- Conductive Materials (AREA)
- Light Receiving Elements (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7841384A GB2033357B (en) | 1978-10-20 | 1978-10-20 | Processes for the production of tin oxide coatings and articles having such coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5558363A JPS5558363A (en) | 1980-05-01 |
| JPS6361388B2 true JPS6361388B2 (es) | 1988-11-29 |
Family
ID=10500482
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12943078A Granted JPS5558363A (en) | 1978-10-20 | 1978-10-20 | Improved tin oxide coat |
| JP63033830A Granted JPS63245813A (ja) | 1978-10-20 | 1988-02-16 | 改良された酸化錫被膜 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63033830A Granted JPS63245813A (ja) | 1978-10-20 | 1988-02-16 | 改良された酸化錫被膜 |
Country Status (13)
| Country | Link |
|---|---|
| JP (2) | JPS5558363A (es) |
| BE (1) | BE871408A (es) |
| BR (1) | BR7806939A (es) |
| CA (1) | CA1121666A (es) |
| CH (1) | CH640276A5 (es) |
| DE (1) | DE2845782A1 (es) |
| FI (1) | FI64128C (es) |
| FR (1) | FR2439240A1 (es) |
| GB (1) | GB2033357B (es) |
| IT (1) | IT1109618B (es) |
| NL (1) | NL191210C (es) |
| NO (1) | NO144140C (es) |
| SE (1) | SE431321B (es) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018090B2 (ja) * | 1979-10-03 | 1985-05-08 | 日本板硝子株式会社 | 導電薄膜の形成方法 |
| CA1171505A (en) * | 1980-07-23 | 1984-07-24 | Katherine V. Clem | Conductive elements for photovoltaic cells |
| US4377613A (en) * | 1981-09-14 | 1983-03-22 | Gordon Roy G | Non-iridescent glass structures |
| DE3300449A1 (de) * | 1983-01-08 | 1984-07-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung einer elektrode fuer eine hochdruckgasentladungslampe |
| JPS59190219A (ja) * | 1983-04-12 | 1984-10-29 | Nippon Sheet Glass Co Ltd | 基体に酸化錫膜を形成する方法 |
| JPS6273783A (ja) * | 1985-09-27 | 1987-04-04 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
| GB8624825D0 (en) * | 1986-10-16 | 1986-11-19 | Glaverbel | Vehicle windows |
| GB8630791D0 (en) * | 1986-12-23 | 1987-02-04 | Glaverbel | Coating glass |
| JPH07112076B2 (ja) * | 1987-05-07 | 1995-11-29 | 日本板硝子株式会社 | 二層構造を有する透明導電膜体 |
| JPH021104A (ja) * | 1988-03-08 | 1990-01-05 | Taiyo Yuden Co Ltd | 電気二重層コンデンサ |
| JPH01227418A (ja) * | 1988-03-08 | 1989-09-11 | Taiyo Yuden Co Ltd | 電気二重層コンデンサ |
| DE4303074C2 (de) * | 1992-02-27 | 1994-05-19 | Siemens Ag | Schaltungsanordnung zur Steuerung der Ladung eines Kondensators |
| DE4243382C2 (de) * | 1992-02-27 | 1994-06-09 | Siemens Ag | Schaltungsanordnung zur Steuerung der Entladung eines Kondensators |
| DE4213747A1 (de) * | 1992-04-25 | 1993-10-28 | Merck Patent Gmbh | Elektrisch leitfähige Pigmente |
| DE4337986C2 (de) * | 1993-11-06 | 1996-06-05 | Schott Glaswerke | Verwendungen von Sn(IV)-Carboxylaten als Ausgangsverbindungen für Tauchlösungen zur Herstellung transparenter, elektrisch leitfähiger Einkomponentenschichten aus reinem oder dotiertem SnO¶2¶ auf Glassubstraten |
| US5698262A (en) | 1996-05-06 | 1997-12-16 | Libbey-Owens-Ford Co. | Method for forming tin oxide coating on glass |
| DE19801861C2 (de) * | 1998-01-20 | 2001-10-18 | Schott Glas | Verfahren zum Herstellen eines hohlen, innenbeschichteten Glasformkörpers |
| DE19810848A1 (de) * | 1998-02-06 | 1999-08-12 | Heinz Zorn | Spiegelheizeinrichtung |
| DE19844046C2 (de) | 1998-09-25 | 2001-08-23 | Schott Glas | Mehrscheibenisolierglas |
| US20030165731A1 (en) * | 2002-03-01 | 2003-09-04 | Gayatri Vyas | Coated fuel cell electrical contact element |
| US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| JP2007242340A (ja) * | 2006-03-07 | 2007-09-20 | Fujikura Ltd | 透明導電性基板及びその製造方法並びにその製造装置 |
| DE102014220575A1 (de) * | 2014-10-10 | 2015-10-29 | Siemens Vai Metals Technologies Gmbh | Feuerfestbauteil zum Auskleiden eines metallurgischen Gefäßes |
| US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
| JP7129310B2 (ja) * | 2018-10-17 | 2022-09-01 | 株式会社カネカ | 蒸着装置 |
| WO2023214161A1 (en) * | 2022-05-03 | 2023-11-09 | Pilkington Group Limited | Method of forming a tin oxide coating |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936551A (es) * | 1972-06-29 | 1974-04-04 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2566346A (en) * | 1948-09-08 | 1951-09-04 | Pittsburgh Plate Glass Co | Electroconductive products and production thereof |
| US2651585A (en) * | 1949-06-25 | 1953-09-08 | Pittsburgh Plate Glass Co | Production of electroconductive articles |
| US3107177A (en) * | 1960-01-29 | 1963-10-15 | Pittsburgh Plate Glass Co | Method of applying an electroconductive tin oxide film and composition therefor |
| US3705054A (en) * | 1967-01-25 | 1972-12-05 | Tokyo Shibaura Electric Co | Method of applying coatings of tin oxide upon substrates |
| US3667814A (en) * | 1970-09-04 | 1972-06-06 | Alfred Krivda | Vacuum loader |
| BE788501A (fr) * | 1971-09-17 | 1973-01-02 | Libbey Owens Ford Co | Procede d'application d'enduits d'oxyde d'etain sur des substrats transparents |
| US3949259A (en) * | 1973-08-17 | 1976-04-06 | U.S. Philips Corporation | Light-transmitting, thermal-radiation reflecting filter |
-
1978
- 1978-10-20 FI FI783195A patent/FI64128C/fi not_active IP Right Cessation
- 1978-10-20 FR FR7829935A patent/FR2439240A1/fr active Granted
- 1978-10-20 DE DE19782845782 patent/DE2845782A1/de active Granted
- 1978-10-20 BR BR7806939A patent/BR7806939A/pt unknown
- 1978-10-20 GB GB7841384A patent/GB2033357B/en not_active Expired
- 1978-10-20 JP JP12943078A patent/JPS5558363A/ja active Granted
- 1978-10-20 NL NL7810511A patent/NL191210C/xx not_active IP Right Cessation
- 1978-10-20 SE SE7810973A patent/SE431321B/sv not_active IP Right Cessation
- 1978-10-20 IT IT69421/78A patent/IT1109618B/it active
- 1978-10-20 CH CH1088078A patent/CH640276A5/fr not_active IP Right Cessation
- 1978-10-20 NO NO783553A patent/NO144140C/no unknown
- 1978-10-20 BE BE191237A patent/BE871408A/xx not_active IP Right Cessation
- 1978-10-20 CA CA000313867A patent/CA1121666A/en not_active Expired
-
1988
- 1988-02-16 JP JP63033830A patent/JPS63245813A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936551A (es) * | 1972-06-29 | 1974-04-04 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2439240A1 (fr) | 1980-05-16 |
| JPS63245813A (ja) | 1988-10-12 |
| DE2845782C2 (es) | 1990-04-19 |
| FI783195A (fi) | 1980-04-21 |
| BE871408A (fr) | 1979-04-20 |
| SE7810973L (sv) | 1980-06-23 |
| DE2845782A1 (de) | 1980-04-30 |
| CA1121666A (en) | 1982-04-13 |
| IT1109618B (it) | 1985-12-23 |
| IT7869421A0 (it) | 1978-10-20 |
| GB2033357B (en) | 1983-01-06 |
| CH640276A5 (en) | 1983-12-30 |
| NL191210C (nl) | 1995-03-16 |
| NL7810511A (nl) | 1980-04-22 |
| NO144140B (no) | 1981-03-23 |
| NO783553L (no) | 1980-04-22 |
| NL191210B (nl) | 1994-10-17 |
| FI64128B (fi) | 1983-06-30 |
| FI64128C (fi) | 1983-10-10 |
| FR2439240B1 (es) | 1984-06-29 |
| BR7806939A (pt) | 1980-04-22 |
| SE431321B (sv) | 1984-01-30 |
| NO144140C (no) | 1981-07-01 |
| JPS5558363A (en) | 1980-05-01 |
| GB2033357A (en) | 1980-05-21 |
| JPS649399B2 (es) | 1989-02-17 |
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