FR2439240A1 - Procede pour produire des pellicules transparentes d'oxyde stannique sur un substrat chauffe, leur utilisation pour fabriquer des produits comportant une telle pellicule et appareil pour la mise en oeuvre de ce procede - Google Patents

Procede pour produire des pellicules transparentes d'oxyde stannique sur un substrat chauffe, leur utilisation pour fabriquer des produits comportant une telle pellicule et appareil pour la mise en oeuvre de ce procede

Info

Publication number
FR2439240A1
FR2439240A1 FR7829935A FR7829935A FR2439240A1 FR 2439240 A1 FR2439240 A1 FR 2439240A1 FR 7829935 A FR7829935 A FR 7829935A FR 7829935 A FR7829935 A FR 7829935A FR 2439240 A1 FR2439240 A1 FR 2439240A1
Authority
FR
France
Prior art keywords
films
tin
producing
film
heated substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7829935A
Other languages
English (en)
Other versions
FR2439240B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2439240A1 publication Critical patent/FR2439240A1/fr
Application granted granted Critical
Publication of FR2439240B1 publication Critical patent/FR2439240B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/84Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00Compounds of tin
    • C01G19/02Oxides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • C03C17/2453Coating containing SnO2
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/407Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/14Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005Photoelectrochemical storage cells
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013Heaters using resistive films or coatings
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Light Receiving Elements (AREA)
  • Conductive Materials (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

A.PROCEDE POUR PRODUIRE DES PELLICULES TRANSPARENTES D'OXYDE STANNIQUE SUR UN SUBSTRAT CHAUFFE. B.L'INVENTION PERMET DE PRODUIRE DES PELLICULES CONDUCTRICES DE L'ELECTRICITE A BASE D'OXYDE D'ETAIN EN UTILISANT DES COMPOSES CHIMIQUES GAZEUX QUI REAGISSENT POUR FORMER UNE LIAISON ETAIN-FLUOR A UNE TEMPERATURE QUI: 1EST SUFFISAMMENT ELEVEE POUR QUE LA MOLECULE RENFERMANT LA LIAISON ETAIN-FLUOR NOUVELLEMENT CREEE RESTE EN PHASE VAPEUR; ET, 2ASSEZ BASSE POUR QUE L'OXYDATION DE CETTE MOLECULE N'AIT LIEU QU'APRES LE REARRANGEMENT MOLECULAIRE INDIQUE. L'INVENTION DECRIT AUSSI DES MOYENS POUR LA MISE EN OEUVRE DE CE PROCEDE. LES PELLICULES PREPAREES SELON L'INVENTION ONT UNE RESISTANCE DE SURFACE QUI PEUT DESCENDRE JUSQU'A 1OHM AU CARRE QUAND L'EPAISSEUR DE LA PELLICULE EST D'ENVIRON UN MICRON. LES PELLICULES AINSI OBTENUES REFLECHISSENT REMARQUABLEMENT LES RADIATIONS INFRAROUGES. C.PRODUCTION NOTAMMENT DE REVETEMENTS TRANSPARENTS, CONDUCTEURS POUR DES PILES SOLAIRES, DES CELLULES PHOTOCONDUCTRICES, DES DISPOSITIFS ELECTRO-OPTIQUES A CRISTAUX LIQUIDES, DES CELLULES PHOTO-ELECTROCHIMIQUES ET DE NOMBREUX AUTRES DISPOSITIFS OPTO-ELECTRONIQUES.
FR7829935A 1978-10-20 1978-10-20 Procede pour produire des pellicules transparentes d'oxyde stannique sur un substrat chauffe, leur utilisation pour fabriquer des produits comportant une telle pellicule et appareil pour la mise en oeuvre de ce procede Granted FR2439240A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7841384A GB2033357B (en) 1978-10-20 1978-10-20 Processes for the production of tin oxide coatings and articles having such coatings

Publications (2)

Publication Number Publication Date
FR2439240A1 true FR2439240A1 (fr) 1980-05-16
FR2439240B1 FR2439240B1 (fr) 1984-06-29

Family

ID=10500482

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7829935A Granted FR2439240A1 (fr) 1978-10-20 1978-10-20 Procede pour produire des pellicules transparentes d'oxyde stannique sur un substrat chauffe, leur utilisation pour fabriquer des produits comportant une telle pellicule et appareil pour la mise en oeuvre de ce procede

Country Status (13)

Country Link
JP (2) JPS5558363A (fr)
BE (1) BE871408A (fr)
BR (1) BR7806939A (fr)
CA (1) CA1121666A (fr)
CH (1) CH640276A5 (fr)
DE (1) DE2845782A1 (fr)
FI (1) FI64128C (fr)
FR (1) FR2439240A1 (fr)
GB (1) GB2033357B (fr)
IT (1) IT1109618B (fr)
NL (1) NL191210C (fr)
NO (1) NO144140C (fr)
SE (1) SE431321B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487584A1 (fr) * 1980-07-23 1982-01-29 Eastman Kodak Co Element conducteur, procede de preparation de cet element conducteur et cellule photovoltaique comprenant cet element
EP0125954A1 (fr) * 1983-04-12 1984-11-21 Saint Gobain Vitrage International Couche d'oxyde d'étain à caractéristiques électriques améliorées obtenues à partir de composés gazeux

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018090B2 (ja) * 1979-10-03 1985-05-08 日本板硝子株式会社 導電薄膜の形成方法
US4377613A (en) * 1981-09-14 1983-03-22 Gordon Roy G Non-iridescent glass structures
DE3300449A1 (de) * 1983-01-08 1984-07-12 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung einer elektrode fuer eine hochdruckgasentladungslampe
JPS6273783A (ja) * 1985-09-27 1987-04-04 Taiyo Yuden Co Ltd 非晶質半導体太陽電池
GB8624825D0 (en) * 1986-10-16 1986-11-19 Glaverbel Vehicle windows
GB8630791D0 (en) * 1986-12-23 1987-02-04 Glaverbel Coating glass
JPH07112076B2 (ja) * 1987-05-07 1995-11-29 日本板硝子株式会社 二層構造を有する透明導電膜体
JPH01227418A (ja) * 1988-03-08 1989-09-11 Taiyo Yuden Co Ltd 電気二重層コンデンサ
JPH021104A (ja) * 1988-03-08 1990-01-05 Taiyo Yuden Co Ltd 電気二重層コンデンサ
DE4243382C2 (de) * 1992-02-27 1994-06-09 Siemens Ag Schaltungsanordnung zur Steuerung der Entladung eines Kondensators
DE4303074C2 (de) * 1992-02-27 1994-05-19 Siemens Ag Schaltungsanordnung zur Steuerung der Ladung eines Kondensators
DE4213747A1 (de) * 1992-04-25 1993-10-28 Merck Patent Gmbh Elektrisch leitfähige Pigmente
DE4337986C2 (de) * 1993-11-06 1996-06-05 Schott Glaswerke Verwendungen von Sn(IV)-Carboxylaten als Ausgangsverbindungen für Tauchlösungen zur Herstellung transparenter, elektrisch leitfähiger Einkomponentenschichten aus reinem oder dotiertem SnO¶2¶ auf Glassubstraten
US5698262A (en) 1996-05-06 1997-12-16 Libbey-Owens-Ford Co. Method for forming tin oxide coating on glass
DE19801861C2 (de) * 1998-01-20 2001-10-18 Schott Glas Verfahren zum Herstellen eines hohlen, innenbeschichteten Glasformkörpers
DE19810848A1 (de) * 1998-02-06 1999-08-12 Heinz Zorn Spiegelheizeinrichtung
DE19844046C2 (de) * 1998-09-25 2001-08-23 Schott Glas Mehrscheibenisolierglas
US20030165731A1 (en) * 2002-03-01 2003-09-04 Gayatri Vyas Coated fuel cell electrical contact element
US7372610B2 (en) 2005-02-23 2008-05-13 Sage Electrochromics, Inc. Electrochromic devices and methods
JP2007242340A (ja) * 2006-03-07 2007-09-20 Fujikura Ltd 透明導電性基板及びその製造方法並びにその製造装置
DE102014220575A1 (de) * 2014-10-10 2015-10-29 Siemens Vai Metals Technologies Gmbh Feuerfestbauteil zum Auskleiden eines metallurgischen Gefäßes
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
JP7129310B2 (ja) * 2018-10-17 2022-09-01 株式会社カネカ 蒸着装置
WO2023214161A1 (fr) * 2022-05-03 2023-11-09 Pilkington Group Limited Procédé de formation d'un revêtement d'oxyde d'étain

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2566346A (en) * 1948-09-08 1951-09-04 Pittsburgh Plate Glass Co Electroconductive products and production thereof
US2651585A (en) * 1949-06-25 1953-09-08 Pittsburgh Plate Glass Co Production of electroconductive articles
US3107177A (en) * 1960-01-29 1963-10-15 Pittsburgh Plate Glass Co Method of applying an electroconductive tin oxide film and composition therefor
US3705054A (en) * 1967-01-25 1972-12-05 Tokyo Shibaura Electric Co Method of applying coatings of tin oxide upon substrates
US3667814A (en) * 1970-09-04 1972-06-06 Alfred Krivda Vacuum loader
BE788501A (fr) * 1971-09-17 1973-01-02 Libbey Owens Ford Co Procede d'application d'enduits d'oxyde d'etain sur des substrats transparents
US3766053A (en) * 1972-06-29 1973-10-16 Nalco Chemical Co Corrosion inhibitors for refining & petrochemical processing equipment
US3949259A (en) * 1973-08-17 1976-04-06 U.S. Philips Corporation Light-transmitting, thermal-radiation reflecting filter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487584A1 (fr) * 1980-07-23 1982-01-29 Eastman Kodak Co Element conducteur, procede de preparation de cet element conducteur et cellule photovoltaique comprenant cet element
EP0125954A1 (fr) * 1983-04-12 1984-11-21 Saint Gobain Vitrage International Couche d'oxyde d'étain à caractéristiques électriques améliorées obtenues à partir de composés gazeux

Also Published As

Publication number Publication date
FR2439240B1 (fr) 1984-06-29
FI64128C (fi) 1983-10-10
FI783195A (fi) 1980-04-21
GB2033357A (en) 1980-05-21
FI64128B (fi) 1983-06-30
BE871408A (fr) 1979-04-20
DE2845782A1 (de) 1980-04-30
DE2845782C2 (fr) 1990-04-19
JPS63245813A (ja) 1988-10-12
IT7869421A0 (it) 1978-10-20
JPS6361388B2 (fr) 1988-11-29
NO783553L (no) 1980-04-22
NO144140C (no) 1981-07-01
NL191210C (nl) 1995-03-16
NL7810511A (nl) 1980-04-22
NL191210B (nl) 1994-10-17
SE7810973L (sv) 1980-06-23
BR7806939A (pt) 1980-04-22
GB2033357B (en) 1983-01-06
CH640276A5 (en) 1983-12-30
JPS5558363A (en) 1980-05-01
NO144140B (no) 1981-03-23
SE431321B (sv) 1984-01-30
CA1121666A (fr) 1982-04-13
IT1109618B (it) 1985-12-23
JPS649399B2 (fr) 1989-02-17

Similar Documents

Publication Publication Date Title
FR2439240A1 (fr) Procede pour produire des pellicules transparentes d'oxyde stannique sur un substrat chauffe, leur utilisation pour fabriquer des produits comportant une telle pellicule et appareil pour la mise en oeuvre de ce procede
Benramdane et al. A chemical method for the preparation of thin films of CdO and ZnO
Takahashi et al. Plasma‐polymerized C60/C70 mixture films: electric conductivity and structure
ATE41078T1 (de) Photovoltaische duennfilmsolarzelle und verfahren zu ihrer herstellung.
WO1980002146A1 (fr) Procede de preparation d'un haut polymere d'acetylene tres conducteur
Corley et al. Preparation and properties of poly‐p‐xylylene
JPS5693375A (en) Photoelectric conversion device
US4141778A (en) Method of preparing crystalline compounds AIVA BVIA
US3468363A (en) Method of producing homogeneous ingots of mercury cadmium telluride
Becerra et al. A gas-phase kinetic study of the reaction of germylene with trimethylsilane: absolute rate constants, temperature dependence and mechanism
Kotkata et al. Transport studies of S Se amorphous semiconductors
Woolf et al. 454. The formation of complex fluorides. Part I. The relation between the conductivities of boric, arsenious, and antimonic fluorides and complex formation
US4793893A (en) Methods for the preparation of thin large-area single crystals of diacetylenes and polydiacetylenes
Hiscocks et al. Crystal pulling and constitution in Pb 1− x Sn x Te
FR2496704A1 (fr) Procede de formation d'une couche mince de phosphore sur les substrats de silicium, par depot de vapeur de h3po4
US3629083A (en) Process of polymerization in an electric field and new products obtained thereby
Heller et al. Synthesis of 4‐vinylbiphenyl–isoprene block copolymers and their characterization by gel‐permeation chromatography
Dresdner The pyrolysis of trifluoromethyl sulfur pentafluoride and its reaction with perfluoropropylene
De Vries The Non-Classical Pentamethylcyclopentadienyl-Carbinyl Cation
Soma The photoinduced charge separation at the water-porphyrin interface
Hermolin et al. Thin-film optical spectroscopic investigations of 1-alkyl-2-(carbomethoxy)-and 2-acetylpyridinyl radical monomers and dimers
GB1292060A (en) A method of manufacturing a semiconductor device
Cradock et al. Studies in germyl chemistry. Part III. Trigermylphosphine
Kudman A nondestructive measurement of carrier concentration in heavily doped semiconducting materials and its application to thin surface layers
Angus et al. Stereochemical non-rigidity in germylcyclopentadiene and related derivatives of germane

Legal Events

Date Code Title Description
ST Notification of lapse