FI64128C - Foerfarande foer paofoering av en transparent fluordopad stannioxidfilm pao ett upphettat substrat med reglerad fluorfoeroreningshalt - Google Patents
Foerfarande foer paofoering av en transparent fluordopad stannioxidfilm pao ett upphettat substrat med reglerad fluorfoeroreningshalt Download PDFInfo
- Publication number
- FI64128C FI64128C FI783195A FI783195A FI64128C FI 64128 C FI64128 C FI 64128C FI 783195 A FI783195 A FI 783195A FI 783195 A FI783195 A FI 783195A FI 64128 C FI64128 C FI 64128C
- Authority
- FI
- Finland
- Prior art keywords
- fluorine
- compound
- tin
- substrate
- gas
- Prior art date
Links
- 229910052731 fluorine Inorganic materials 0.000 claims description 57
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 55
- 239000011737 fluorine Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 22
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 150000003606 tin compounds Chemical class 0.000 claims description 9
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 4
- QXDJFNYEWKDJJA-UHFFFAOYSA-N dimethylstannane Chemical compound C[SnH2]C QXDJFNYEWKDJJA-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 238000011109 contamination Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 2
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 claims 1
- 239000007789 gas Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 28
- 238000000576 coating method Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 15
- 229910001887 tin oxide Inorganic materials 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 11
- 238000002310 reflectometry Methods 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- -1 fluoride compound Chemical class 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 238000004537 pulping Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000005470 impregnation Methods 0.000 description 3
- 230000009972 noncorrosive effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- QIYZKVMAFMDRTP-UHFFFAOYSA-N pentafluoro(trifluoromethyl)-$l^{6}-sulfane Chemical compound FC(F)(F)S(F)(F)(F)(F)F QIYZKVMAFMDRTP-UHFFFAOYSA-N 0.000 description 3
- 230000008707 rearrangement Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 3
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010410 dusting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZHMUANACXUSCMY-UHFFFAOYSA-N trimethyl(trifluoromethyl)stannane Chemical compound C[Sn](C)(C)C(F)(F)F ZHMUANACXUSCMY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 240000007591 Tilia tomentosa Species 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- VPBPKFIZNWQANG-UHFFFAOYSA-N [F].[Sn] Chemical class [F].[Sn] VPBPKFIZNWQANG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- LHFAOGJOEFXRQH-UHFFFAOYSA-N bromo(pentafluoro)-$l^{6}-sulfane Chemical compound FS(F)(F)(F)(F)Br LHFAOGJOEFXRQH-UHFFFAOYSA-N 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- CZRDZAGTSCUWNG-UHFFFAOYSA-M chloro(dimethyl)tin Chemical compound C[Sn](C)Cl CZRDZAGTSCUWNG-UHFFFAOYSA-M 0.000 description 1
- GSYNTTDHMKSMFY-UHFFFAOYSA-N chloro(pentafluoro)-$l^{6}-sulfane Chemical compound FS(F)(F)(F)(F)Cl GSYNTTDHMKSMFY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003097 mucus Anatomy 0.000 description 1
- TZXQHGFQXBLNCD-UHFFFAOYSA-N n-(hydroxyamino)-n-phenylhydroxylamine Chemical compound ONN(O)C1=CC=CC=C1 TZXQHGFQXBLNCD-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- UXPOJVLZTPGWFX-UHFFFAOYSA-N pentafluoroethyl iodide Chemical compound FC(F)(F)C(F)(F)I UXPOJVLZTPGWFX-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- DFNPRTKVCGZMMC-UHFFFAOYSA-M tributyl(fluoro)stannane Chemical compound CCCC[Sn](F)(CCCC)CCCC DFNPRTKVCGZMMC-UHFFFAOYSA-M 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/84—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Geochemistry & Mineralogy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
- Conductive Materials (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Electric Cables (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7841384A GB2033357B (en) | 1978-10-20 | 1978-10-20 | Processes for the production of tin oxide coatings and articles having such coatings |
| GB7841384 | 1978-10-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI783195A FI783195A (fi) | 1980-04-21 |
| FI64128B FI64128B (fi) | 1983-06-30 |
| FI64128C true FI64128C (fi) | 1983-10-10 |
Family
ID=10500482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI783195A FI64128C (fi) | 1978-10-20 | 1978-10-20 | Foerfarande foer paofoering av en transparent fluordopad stannioxidfilm pao ett upphettat substrat med reglerad fluorfoeroreningshalt |
Country Status (13)
| Country | Link |
|---|---|
| JP (2) | JPS5558363A (fr) |
| BE (1) | BE871408A (fr) |
| BR (1) | BR7806939A (fr) |
| CA (1) | CA1121666A (fr) |
| CH (1) | CH640276A5 (fr) |
| DE (1) | DE2845782A1 (fr) |
| FI (1) | FI64128C (fr) |
| FR (1) | FR2439240A1 (fr) |
| GB (1) | GB2033357B (fr) |
| IT (1) | IT1109618B (fr) |
| NL (1) | NL191210C (fr) |
| NO (1) | NO144140C (fr) |
| SE (1) | SE431321B (fr) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018090B2 (ja) * | 1979-10-03 | 1985-05-08 | 日本板硝子株式会社 | 導電薄膜の形成方法 |
| CA1171505A (fr) * | 1980-07-23 | 1984-07-24 | Katherine V. Clem | Elements conducteurs pour piles photovoltaiques |
| US4377613A (en) * | 1981-09-14 | 1983-03-22 | Gordon Roy G | Non-iridescent glass structures |
| DE3300449A1 (de) * | 1983-01-08 | 1984-07-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung einer elektrode fuer eine hochdruckgasentladungslampe |
| JPS59190219A (ja) * | 1983-04-12 | 1984-10-29 | Nippon Sheet Glass Co Ltd | 基体に酸化錫膜を形成する方法 |
| JPS6273783A (ja) * | 1985-09-27 | 1987-04-04 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
| GB8624825D0 (en) * | 1986-10-16 | 1986-11-19 | Glaverbel | Vehicle windows |
| GB8630791D0 (en) * | 1986-12-23 | 1987-02-04 | Glaverbel | Coating glass |
| JPH07112076B2 (ja) * | 1987-05-07 | 1995-11-29 | 日本板硝子株式会社 | 二層構造を有する透明導電膜体 |
| JPH01227418A (ja) * | 1988-03-08 | 1989-09-11 | Taiyo Yuden Co Ltd | 電気二重層コンデンサ |
| JPH021104A (ja) * | 1988-03-08 | 1990-01-05 | Taiyo Yuden Co Ltd | 電気二重層コンデンサ |
| DE4243382C2 (de) * | 1992-02-27 | 1994-06-09 | Siemens Ag | Schaltungsanordnung zur Steuerung der Entladung eines Kondensators |
| DE4303074C2 (de) * | 1992-02-27 | 1994-05-19 | Siemens Ag | Schaltungsanordnung zur Steuerung der Ladung eines Kondensators |
| DE4213747A1 (de) * | 1992-04-25 | 1993-10-28 | Merck Patent Gmbh | Elektrisch leitfähige Pigmente |
| DE4337986C2 (de) * | 1993-11-06 | 1996-06-05 | Schott Glaswerke | Verwendungen von Sn(IV)-Carboxylaten als Ausgangsverbindungen für Tauchlösungen zur Herstellung transparenter, elektrisch leitfähiger Einkomponentenschichten aus reinem oder dotiertem SnO¶2¶ auf Glassubstraten |
| US5698262A (en) | 1996-05-06 | 1997-12-16 | Libbey-Owens-Ford Co. | Method for forming tin oxide coating on glass |
| DE19801861C2 (de) * | 1998-01-20 | 2001-10-18 | Schott Glas | Verfahren zum Herstellen eines hohlen, innenbeschichteten Glasformkörpers |
| DE19810848A1 (de) * | 1998-02-06 | 1999-08-12 | Heinz Zorn | Spiegelheizeinrichtung |
| DE19844046C2 (de) | 1998-09-25 | 2001-08-23 | Schott Glas | Mehrscheibenisolierglas |
| US20030165731A1 (en) * | 2002-03-01 | 2003-09-04 | Gayatri Vyas | Coated fuel cell electrical contact element |
| US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| JP2007242340A (ja) * | 2006-03-07 | 2007-09-20 | Fujikura Ltd | 透明導電性基板及びその製造方法並びにその製造装置 |
| DE102014220575A1 (de) * | 2014-10-10 | 2015-10-29 | Siemens Vai Metals Technologies Gmbh | Feuerfestbauteil zum Auskleiden eines metallurgischen Gefäßes |
| US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
| JP7129310B2 (ja) * | 2018-10-17 | 2022-09-01 | 株式会社カネカ | 蒸着装置 |
| WO2023214161A1 (fr) * | 2022-05-03 | 2023-11-09 | Pilkington Group Limited | Procédé de formation d'un revêtement d'oxyde d'étain |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2566346A (en) * | 1948-09-08 | 1951-09-04 | Pittsburgh Plate Glass Co | Electroconductive products and production thereof |
| US2651585A (en) * | 1949-06-25 | 1953-09-08 | Pittsburgh Plate Glass Co | Production of electroconductive articles |
| US3107177A (en) * | 1960-01-29 | 1963-10-15 | Pittsburgh Plate Glass Co | Method of applying an electroconductive tin oxide film and composition therefor |
| US3705054A (en) * | 1967-01-25 | 1972-12-05 | Tokyo Shibaura Electric Co | Method of applying coatings of tin oxide upon substrates |
| US3667814A (en) * | 1970-09-04 | 1972-06-06 | Alfred Krivda | Vacuum loader |
| BE788501A (fr) * | 1971-09-17 | 1973-01-02 | Libbey Owens Ford Co | Procede d'application d'enduits d'oxyde d'etain sur des substrats transparents |
| US3766053A (en) * | 1972-06-29 | 1973-10-16 | Nalco Chemical Co | Corrosion inhibitors for refining & petrochemical processing equipment |
| US3949259A (en) * | 1973-08-17 | 1976-04-06 | U.S. Philips Corporation | Light-transmitting, thermal-radiation reflecting filter |
-
1978
- 1978-10-20 GB GB7841384A patent/GB2033357B/en not_active Expired
- 1978-10-20 NO NO783553A patent/NO144140C/no unknown
- 1978-10-20 FI FI783195A patent/FI64128C/fi not_active IP Right Cessation
- 1978-10-20 CA CA000313867A patent/CA1121666A/fr not_active Expired
- 1978-10-20 DE DE19782845782 patent/DE2845782A1/de active Granted
- 1978-10-20 IT IT69421/78A patent/IT1109618B/it active
- 1978-10-20 NL NL7810511A patent/NL191210C/xx not_active IP Right Cessation
- 1978-10-20 SE SE7810973A patent/SE431321B/sv not_active IP Right Cessation
- 1978-10-20 FR FR7829935A patent/FR2439240A1/fr active Granted
- 1978-10-20 JP JP12943078A patent/JPS5558363A/ja active Granted
- 1978-10-20 BR BR7806939A patent/BR7806939A/pt unknown
- 1978-10-20 BE BE191237A patent/BE871408A/fr not_active IP Right Cessation
- 1978-10-20 CH CH1088078A patent/CH640276A5/fr not_active IP Right Cessation
-
1988
- 1988-02-16 JP JP63033830A patent/JPS63245813A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2033357B (en) | 1983-01-06 |
| IT7869421A0 (it) | 1978-10-20 |
| NO144140C (no) | 1981-07-01 |
| JPS5558363A (en) | 1980-05-01 |
| FI64128B (fi) | 1983-06-30 |
| FR2439240A1 (fr) | 1980-05-16 |
| BE871408A (fr) | 1979-04-20 |
| FR2439240B1 (fr) | 1984-06-29 |
| DE2845782C2 (fr) | 1990-04-19 |
| FI783195A (fi) | 1980-04-21 |
| JPS6361388B2 (fr) | 1988-11-29 |
| CH640276A5 (en) | 1983-12-30 |
| SE7810973L (sv) | 1980-06-23 |
| GB2033357A (en) | 1980-05-21 |
| JPS649399B2 (fr) | 1989-02-17 |
| NO144140B (no) | 1981-03-23 |
| NL191210C (nl) | 1995-03-16 |
| NL7810511A (nl) | 1980-04-22 |
| IT1109618B (it) | 1985-12-23 |
| SE431321B (sv) | 1984-01-30 |
| NL191210B (nl) | 1994-10-17 |
| NO783553L (no) | 1980-04-22 |
| JPS63245813A (ja) | 1988-10-12 |
| BR7806939A (pt) | 1980-04-22 |
| CA1121666A (fr) | 1982-04-13 |
| DE2845782A1 (de) | 1980-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Patent lapsed | ||
| MM | Patent lapsed |
Owner name: GORDON, ROY GERALD |