JPS6217137U - - Google Patents

Info

Publication number
JPS6217137U
JPS6217137U JP10778185U JP10778185U JPS6217137U JP S6217137 U JPS6217137 U JP S6217137U JP 10778185 U JP10778185 U JP 10778185U JP 10778185 U JP10778185 U JP 10778185U JP S6217137 U JPS6217137 U JP S6217137U
Authority
JP
Japan
Prior art keywords
separated
semiconductor device
integrated semiconductor
isolation trenches
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10778185U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10778185U priority Critical patent/JPS6217137U/ja
Publication of JPS6217137U publication Critical patent/JPS6217137U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Description

【図面の簡単な説明】
第1図は本考案の一実施例の上面図、第2図は
第1図の―断面図、第3図A乃至Dは製造工
程図、第4図は従来技術の説明図である。 1…半絶縁性GaAs基板、2…n++型高濃
度不純物層、3…n型動作層、4…シヨツトキ
電極、5…オーミツク電極、6…分離溝、7…ポ
リイミド、8…第1ビームリード電極、9…リー
ド電極、10…第2ビームリード電極。

Claims (1)

    【実用新案登録請求の範囲】
  1. {100}面を主表面に、複数の素子が分離溝
    によつて分離されて設けられている集積型半導体
    装置において、分離溝はほぼ〈011〉〈011
    〉方向に配されケミカルエツチングにより逆メサ
    形状に形成されて、前記分離溝の〈011〉〈0
    11〉方向に形成されてある素子の分離をなして
    いる事を特徴とする集積型半導体装置。
JP10778185U 1985-07-15 1985-07-15 Pending JPS6217137U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10778185U JPS6217137U (ja) 1985-07-15 1985-07-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10778185U JPS6217137U (ja) 1985-07-15 1985-07-15

Publications (1)

Publication Number Publication Date
JPS6217137U true JPS6217137U (ja) 1987-02-02

Family

ID=30984374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10778185U Pending JPS6217137U (ja) 1985-07-15 1985-07-15

Country Status (1)

Country Link
JP (1) JPS6217137U (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116834A (ja) * 1980-11-10 1983-07-12 ゼロツクス・コ−ポレ−シヨン 共用線送信装置
JPS58220537A (ja) * 1982-06-17 1983-12-22 Kokusai Electric Co Ltd デ−タ端局の回線監視制御方法
JPS5991527A (ja) * 1982-11-17 1984-05-26 Hitachi Ltd バス優先制御方式

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116834A (ja) * 1980-11-10 1983-07-12 ゼロツクス・コ−ポレ−シヨン 共用線送信装置
JPS58220537A (ja) * 1982-06-17 1983-12-22 Kokusai Electric Co Ltd デ−タ端局の回線監視制御方法
JPS5991527A (ja) * 1982-11-17 1984-05-26 Hitachi Ltd バス優先制御方式

Similar Documents

Publication Publication Date Title
JPH0336132U (ja)
JPS6217137U (ja)
UST104803I4 (en) Self-aligned process for providing an improved high performance bipolar transistor
JP3041908B2 (ja) 半導体装置
JPH0546268Y2 (ja)
JPH02146458U (ja)
JPH0180960U (ja)
JPS62118459U (ja)
JPS62188156U (ja)
JPS58116259U (ja) 半導体レ−ザ
JP2540830B2 (ja) 半導体装置
JPS61156258U (ja)
JPH0671087B2 (ja) 縦型電界効果トランジスタ
JPS6165761U (ja)
JPS60144968A (ja) 半導体装置
JPS6312864U (ja)
JPS6274350U (ja)
JPS58114054U (ja) 光半導体装置
JPS6151757U (ja)
JPS61164052U (ja)
JPH02725U (ja)
JPS62147363U (ja)
JPS6115760U (ja) 半導体集積回路装置
JPS63195737U (ja)
JPS61182049U (ja)