JPS6165761U - - Google Patents

Info

Publication number
JPS6165761U
JPS6165761U JP1984150628U JP15062884U JPS6165761U JP S6165761 U JPS6165761 U JP S6165761U JP 1984150628 U JP1984150628 U JP 1984150628U JP 15062884 U JP15062884 U JP 15062884U JP S6165761 U JPS6165761 U JP S6165761U
Authority
JP
Japan
Prior art keywords
semiconductor substrate
impurity concentration
type diode
lead type
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1984150628U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984150628U priority Critical patent/JPS6165761U/ja
Publication of JPS6165761U publication Critical patent/JPS6165761U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Electrodes Of Semiconductors (AREA)

Description

【図面の簡単な説明】
第1図、第2図は本考案の1実施例の中央断面
図、概略平面図である。第3図は従来装置の中央
断面図である。 1…半導体基板、4,5…ビームリード、15
…溝(絶縁領域)。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板の表面にシヨツトキバリア電極とオ
    ーミツク電極とを形成すると共にこれら各電極に
    それぞれ接続され前記半導体基板の表面上の絶縁
    膜に付設される一組のビームリードを具備してな
    るビームリード形ダイオードにおいて、前記半導
    体基板は半絶縁性を呈する基部と不純物濃度が大
    きい中間部と不純物濃度が小さい表面部とを備え
    、又前記半導体基板は前記シヨツトキバリア電極
    に連なる前記ビームリード下の領域に前記絶縁膜
    から前記基部に達する絶縁領域を付設してなるこ
    とを特徴とするビームリード形ダイオード。
JP1984150628U 1984-10-04 1984-10-04 Pending JPS6165761U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984150628U JPS6165761U (ja) 1984-10-04 1984-10-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984150628U JPS6165761U (ja) 1984-10-04 1984-10-04

Publications (1)

Publication Number Publication Date
JPS6165761U true JPS6165761U (ja) 1986-05-06

Family

ID=30708771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984150628U Pending JPS6165761U (ja) 1984-10-04 1984-10-04

Country Status (1)

Country Link
JP (1) JPS6165761U (ja)

Similar Documents

Publication Publication Date Title
JPS6165761U (ja)
JPS6260053U (ja)
JPH0369232U (ja)
JPS6364035U (ja)
JPS6210451U (ja)
JPS6316471U (ja)
JPS6338344U (ja)
JPS62160557U (ja)
JPS62118459U (ja)
JPS6151757U (ja)
JPS62103252U (ja)
JPS62135449U (ja)
JPS62124861U (ja)
JPS62135450U (ja)
JPS62147345U (ja)
JPS63131150U (ja)
JPS60166155U (ja) 接合型コンデンサ
JPS62122346U (ja)
JPS6234448U (ja)
JPH0298632U (ja)
JPS6163853U (ja)
JPS61183550U (ja)
JPH0279064U (ja)
JPS58114054U (ja) 光半導体装置
JPS6155354U (ja)