JPS6151757U - - Google Patents

Info

Publication number
JPS6151757U
JPS6151757U JP20082884U JP20082884U JPS6151757U JP S6151757 U JPS6151757 U JP S6151757U JP 20082884 U JP20082884 U JP 20082884U JP 20082884 U JP20082884 U JP 20082884U JP S6151757 U JPS6151757 U JP S6151757U
Authority
JP
Japan
Prior art keywords
plateau
electrode
main surface
exposed
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20082884U
Other languages
English (en)
Other versions
JPS622781Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984200828U priority Critical patent/JPS622781Y2/ja
Publication of JPS6151757U publication Critical patent/JPS6151757U/ja
Application granted granted Critical
Publication of JPS622781Y2 publication Critical patent/JPS622781Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Description

【図面の簡単な説明】
第１図、第２図は従来の加圧接触型大電力半導
体装置の概略断面図、第３図は本考案の一実施例
の概略断面図、第４図はその部分拡大断面図であ
る。 １…半導体ペレツト、２…ｎエミツタ領域、３
…ｐベース領域、３１…高不純物濃度領域、４…
ｎベース領域、５…ｐエミツタ領域、６…第１の
主電極（エミツタ電極）、７…制御電極（ベース
電極）、８…第２の主電極、９…第１の金属板（
カソード電極板）、１０…第２の金属板、１１…
ＳｉＯ２膜、１２…ポリイミド系レジン膜。

Claims (1)

    【実用新案登録請求の範囲】
  1. 内部に複数のｐｎ接合を有する半導体基体の同
    じ主表面側に２種の電極が形成されるものにおい
    て、一方の電極は上記主表面に形成された台地状
    部の頂部に、他方の電極は前記台地状部間の底部
    にアルミニウムにより形成され、上記台地状部の
    頂部の上記一方の電極部以外の部分にｐｎ接合の
    端部が露出し、上記主表面の露出部は半導体の熱
    酸化膜で覆われ、上記台地状部の底部に形成され
    た他方の電極の表面はポリイミド系レンジで覆わ
    れていることを特徴とする半導体装置。
JP1984200828U 1984-12-26 1984-12-26 Expired JPS622781Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984200828U JPS622781Y2 (ja) 1984-12-26 1984-12-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984200828U JPS622781Y2 (ja) 1984-12-26 1984-12-26

Publications (2)

Publication Number Publication Date
JPS6151757U true JPS6151757U (ja) 1986-04-07
JPS622781Y2 JPS622781Y2 (ja) 1987-01-22

Family

ID=30762039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984200828U Expired JPS622781Y2 (ja) 1984-12-26 1984-12-26

Country Status (1)

Country Link
JP (1) JPS622781Y2 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123170A (en) * 1976-04-09 1977-10-17 Internatl Rectifier Corp Japan Ltd Insulation method of electrodes of semiconductor elements

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123170A (en) * 1976-04-09 1977-10-17 Internatl Rectifier Corp Japan Ltd Insulation method of electrodes of semiconductor elements

Also Published As

Publication number Publication date
JPS622781Y2 (ja) 1987-01-22

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