JPS6065545A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6065545A
JPS6065545A JP58172990A JP17299083A JPS6065545A JP S6065545 A JPS6065545 A JP S6065545A JP 58172990 A JP58172990 A JP 58172990A JP 17299083 A JP17299083 A JP 17299083A JP S6065545 A JPS6065545 A JP S6065545A
Authority
JP
Japan
Prior art keywords
fuse
passivation film
film
semiconductor device
electrode pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58172990A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0479138B2 (enExample
Inventor
Shinji Udo
有働　信治
Masanori Hiroki
尋木　正紀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP58172990A priority Critical patent/JPS6065545A/ja
Priority to US06/650,172 priority patent/US4628590A/en
Publication of JPS6065545A publication Critical patent/JPS6065545A/ja
Publication of JPH0479138B2 publication Critical patent/JPH0479138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/49—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H10W72/30—
    • H10W72/07336—
    • H10W72/884—
    • H10W74/00—
    • H10W90/736—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP58172990A 1983-09-21 1983-09-21 半導体装置の製造方法 Granted JPS6065545A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58172990A JPS6065545A (ja) 1983-09-21 1983-09-21 半導体装置の製造方法
US06/650,172 US4628590A (en) 1983-09-21 1984-09-13 Method of manufacture of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172990A JPS6065545A (ja) 1983-09-21 1983-09-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6065545A true JPS6065545A (ja) 1985-04-15
JPH0479138B2 JPH0479138B2 (enExample) 1992-12-15

Family

ID=15952129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172990A Granted JPS6065545A (ja) 1983-09-21 1983-09-21 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US4628590A (enExample)
JP (1) JPS6065545A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284521A (ja) * 1985-10-07 1987-04-18 Nec Corp 半導体装置の製造方法
JPS6355955A (ja) * 1986-08-26 1988-03-10 Nec Corp 半導体装置
US5612238A (en) * 1993-12-28 1997-03-18 Nippon Steel Corporation Method of manufacturing first and second memory cell arrays with a capacitor and a nonvolatile memory cell
US5808943A (en) * 1993-12-28 1998-09-15 Nippon Steel Corporation Semiconductor memory and method of manufacturing the same
US5879966A (en) * 1994-09-06 1999-03-09 Taiwan Semiconductor Manufacturing Company Ltd. Method of making an integrated circuit having an opening for a fuse
JP2006185984A (ja) * 2004-12-27 2006-07-13 Fujikura Ltd 半導体装置およびその製造方法
JP2013084908A (ja) * 2011-09-30 2013-05-09 Seiko Instruments Inc 半導体装置

Families Citing this family (64)

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FR2569054B1 (fr) * 1984-08-10 1986-11-28 Eurotechnique Sa Dispositif de neutralisation de l'acces a une zone a proteger d'un circuit integre
US4761386A (en) * 1984-10-22 1988-08-02 National Semiconductor Corporation Method of fabricating conductive non-metallic self-passivating non-corrodable IC bonding pads
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
FR2577338B1 (fr) * 1985-02-12 1987-03-06 Eurotechnique Sa Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
JPH0628290B2 (ja) * 1985-10-09 1994-04-13 三菱電機株式会社 回路用ヒューズを備えた半導体装置
JPH0789569B2 (ja) * 1986-03-26 1995-09-27 株式会社日立製作所 半導体集積回路装置及びその製造方法
US4824801A (en) * 1986-09-09 1989-04-25 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing aluminum bonding pad with PSG coating
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
US4792835A (en) * 1986-12-05 1988-12-20 Texas Instruments Incorporated MOS programmable memories using a metal fuse link and process for making the same
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
US4872140A (en) * 1987-05-19 1989-10-03 Gazelle Microcircuits, Inc. Laser programmable memory array
US4862243A (en) * 1987-06-01 1989-08-29 Texas Instruments Incorporated Scalable fuse link element
US5017510A (en) * 1987-06-01 1991-05-21 Texas Instruments Incorporated Method of making a scalable fuse link element
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
JPH01278065A (ja) * 1988-04-28 1989-11-08 Hitachi Ltd 半導体記憶装置
US5252844A (en) * 1988-11-17 1993-10-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit and method of manufacturing thereof
US4954453A (en) * 1989-02-24 1990-09-04 At&T Bell Laboratories Method of producing an article comprising a multichip assembly
US5025300A (en) * 1989-06-30 1991-06-18 At&T Bell Laboratories Integrated circuits having improved fusible links
US4933297A (en) * 1989-10-12 1990-06-12 At&T Bell Laboratories Method for etching windows having different depths
US4935376A (en) * 1989-10-12 1990-06-19 At&T Bell Laboratories Making silicide gate level runners
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5241212A (en) * 1990-05-01 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit portion and a manufacturing method of the same
JP2579235B2 (ja) * 1990-05-01 1997-02-05 三菱電機株式会社 半導体装置およびその製造方法
US5780918A (en) * 1990-05-22 1998-07-14 Seiko Epson Corporation Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same
US5094984A (en) * 1990-10-12 1992-03-10 Hewlett-Packard Company Suppression of water vapor absorption in glass encapsulation
US5386623A (en) * 1990-11-15 1995-02-07 Hitachi, Ltd. Process for manufacturing a multi-chip module
DE69219165T2 (de) * 1991-01-11 1997-08-07 Texas Instruments Inc Prüf- und Einbrennsystem für einen Wafer und Methode für deren Herstellung
US5408131A (en) * 1992-04-20 1995-04-18 Motorola, Inc. Circuit identifier for use with focused ion beam equipment
DE69514588T2 (de) * 1994-07-29 2000-06-21 Stmicroelectronics, Inc. Verfahren zum Testen und Reparieren eines integrierten Schaltkreises und zum Herstellen einer Passivierungsstruktur
US5550399A (en) * 1994-11-03 1996-08-27 Kabushiki Kaisha Toshiba Integrated circuit with windowed fuse element and contact pad
JPH08222710A (ja) 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
US5747868A (en) * 1995-06-26 1998-05-05 Alliance Semiconductor Corporation Laser fusible link structure for semiconductor devices
JPH0951038A (ja) * 1995-08-07 1997-02-18 Matsushita Electron Corp 半導体装置およびその製造方法
EP0762498A3 (en) * 1995-08-28 1998-06-24 International Business Machines Corporation Fuse window with controlled fuse oxide thickness
US5538924A (en) * 1995-09-05 1996-07-23 Vanguard International Semiconductor Co. Method of forming a moisture guard ring for integrated circuit applications
US6337507B1 (en) * 1995-09-29 2002-01-08 Intel Corporation Silicide agglomeration fuse device with notches to enhance programmability
US6004834A (en) * 1995-11-29 1999-12-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device having a fuse
JPH09153552A (ja) * 1995-11-29 1997-06-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3402029B2 (ja) * 1995-11-30 2003-04-28 三菱電機株式会社 半導体装置の製造方法
US5736433A (en) * 1996-05-22 1998-04-07 Sgs-Thomson Microelectronics, Inc. Double mask hermetic passivation method providing enhanced resistance to moisture
US5821160A (en) * 1996-06-06 1998-10-13 Motorola, Inc. Method for forming a laser alterable fuse area of a memory cell using an etch stop layer
US5702956A (en) * 1996-08-26 1997-12-30 Taiwan Semiconductor Manufactoring, Company Ltd Test site and a method of monitoring via etch depths for semiconductor devices
JPH10116834A (ja) * 1996-10-11 1998-05-06 Toshiba Corp 半導体装置の製造方法
US6054340A (en) * 1997-06-06 2000-04-25 Motorola, Inc. Method for forming a cavity capable of accessing deep fuse structures and device containing the same
JP4255142B2 (ja) * 1998-02-05 2009-04-15 株式会社ルネサステクノロジ 半導体装置
US6677226B1 (en) 1998-05-11 2004-01-13 Motorola, Inc. Method for forming an integrated circuit having a bonding pad and a fuse
US6100116A (en) * 1998-06-18 2000-08-08 Taiwan Semiconductor Manufacturing Company Method to form a protected metal fuse
US6037648A (en) * 1998-06-26 2000-03-14 International Business Machines Corporation Semiconductor structure including a conductive fuse and process for fabrication thereof
US6486526B1 (en) * 1999-01-04 2002-11-26 International Business Machines Corporation Crack stop between neighboring fuses for protection from fuse blow damage
US6235557B1 (en) 1999-04-28 2001-05-22 Philips Semiconductors, Inc. Programmable fuse and method therefor
US6319758B1 (en) * 1999-06-10 2001-11-20 Taiwan Semiconductor Manufacturing Company Redundancy structure in self-aligned contact process
US6306746B1 (en) * 1999-12-30 2001-10-23 Koninklijke Philips Electronics Backend process for fuse link opening
TW437030B (en) * 2000-02-03 2001-05-28 Taiwan Semiconductor Mfg Bonding pad structure and method for making the same
US6838367B1 (en) * 2000-08-24 2005-01-04 Micron Technology, Inc. Method for simultaneous formation of fuse and capacitor plate and resulting structure
US6479308B1 (en) * 2001-12-27 2002-11-12 Formfactor, Inc. Semiconductor fuse covering
US7535078B2 (en) * 2002-02-14 2009-05-19 Freescale Semiconductor, Inc. Semiconductor device having a fuse and method of forming thereof
US6509582B1 (en) * 2002-03-27 2003-01-21 Fairchild Semiconductor Corporation Semiconductor pad construction enabling pre-bump probing by planarizing the post-sort pad surface
US6964906B2 (en) * 2002-07-02 2005-11-15 International Business Machines Corporation Programmable element with selectively conductive dopant and method for programming same
JP2008071991A (ja) * 2006-09-15 2008-03-27 Ricoh Co Ltd 半導体装置及びその製造方法
JP5150149B2 (ja) * 2007-07-03 2013-02-20 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5521422B2 (ja) * 2009-07-22 2014-06-11 株式会社リコー 半導体装置
US12436202B2 (en) * 2021-03-30 2025-10-07 Rosemount Aerospace Inc. Predicting failure and/or estimating remaining useful life of an air-data-probe heater

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146268A (en) * 1980-04-15 1981-11-13 Fujitsu Ltd Manufacture of semiconductor memory unit

Family Cites Families (6)

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US3585712A (en) * 1968-12-12 1971-06-22 Trw Semiconductors Inc Selection and interconnection of devices of a multidevice wafer
US3702025A (en) * 1969-05-12 1972-11-07 Honeywell Inc Discretionary interconnection process
BE794202A (fr) * 1972-01-19 1973-05-16 Intel Corp Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires
JPS5847596Y2 (ja) * 1979-09-05 1983-10-29 富士通株式会社 半導体装置
JPS57143839A (en) * 1981-02-28 1982-09-06 Toshiba Corp Probing needle of semiconductor wafer
JPS5923530A (ja) * 1982-07-30 1984-02-07 Hitachi Ltd 半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146268A (en) * 1980-04-15 1981-11-13 Fujitsu Ltd Manufacture of semiconductor memory unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284521A (ja) * 1985-10-07 1987-04-18 Nec Corp 半導体装置の製造方法
JPS6355955A (ja) * 1986-08-26 1988-03-10 Nec Corp 半導体装置
US5612238A (en) * 1993-12-28 1997-03-18 Nippon Steel Corporation Method of manufacturing first and second memory cell arrays with a capacitor and a nonvolatile memory cell
US5808943A (en) * 1993-12-28 1998-09-15 Nippon Steel Corporation Semiconductor memory and method of manufacturing the same
US5879966A (en) * 1994-09-06 1999-03-09 Taiwan Semiconductor Manufacturing Company Ltd. Method of making an integrated circuit having an opening for a fuse
JP2006185984A (ja) * 2004-12-27 2006-07-13 Fujikura Ltd 半導体装置およびその製造方法
JP2013084908A (ja) * 2011-09-30 2013-05-09 Seiko Instruments Inc 半導体装置

Also Published As

Publication number Publication date
JPH0479138B2 (enExample) 1992-12-15
US4628590A (en) 1986-12-16

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