JPS5793585A - Semiconductor photoreceiving element - Google Patents

Semiconductor photoreceiving element

Info

Publication number
JPS5793585A
JPS5793585A JP55169889A JP16988980A JPS5793585A JP S5793585 A JPS5793585 A JP S5793585A JP 55169889 A JP55169889 A JP 55169889A JP 16988980 A JP16988980 A JP 16988980A JP S5793585 A JPS5793585 A JP S5793585A
Authority
JP
Japan
Prior art keywords
layer
multiplying
type impurity
conductive type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55169889A
Other languages
English (en)
Other versions
JPS6146078B2 (ja
Inventor
Fukunobu Aisaka
Tatsuaki Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15894830&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5793585(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55169889A priority Critical patent/JPS5793585A/ja
Priority to US06/326,119 priority patent/US4481523A/en
Priority to DE8181305658T priority patent/DE3176503D1/de
Priority to EP85101755A priority patent/EP0156156A1/en
Priority to EP81305658A priority patent/EP0053513B1/en
Publication of JPS5793585A publication Critical patent/JPS5793585A/ja
Publication of JPS6146078B2 publication Critical patent/JPS6146078B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP55169889A 1980-12-02 1980-12-02 Semiconductor photoreceiving element Granted JPS5793585A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55169889A JPS5793585A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element
US06/326,119 US4481523A (en) 1980-12-02 1981-11-30 Avalanche photodiodes
DE8181305658T DE3176503D1 (en) 1980-12-02 1981-12-01 Avalanche photodiodes
EP85101755A EP0156156A1 (en) 1980-12-02 1981-12-01 Avalanche photodiodes
EP81305658A EP0053513B1 (en) 1980-12-02 1981-12-01 Avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169889A JPS5793585A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Publications (2)

Publication Number Publication Date
JPS5793585A true JPS5793585A (en) 1982-06-10
JPS6146078B2 JPS6146078B2 (ja) 1986-10-11

Family

ID=15894830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55169889A Granted JPS5793585A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Country Status (4)

Country Link
US (1) US4481523A (ja)
EP (2) EP0053513B1 (ja)
JP (1) JPS5793585A (ja)
DE (1) DE3176503D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154276A (ja) * 1982-03-10 1983-09-13 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド
JPS6451674A (en) * 1987-08-24 1989-02-27 Hitachi Ltd Semiconductor photodetector
JP2007129033A (ja) * 2005-11-02 2007-05-24 Nippon Sheet Glass Co Ltd アバランシェフォトダイオードおよびその製造方法
JP2008251729A (ja) * 2007-03-29 2008-10-16 Eudyna Devices Inc 受光素子の製造方法
JP2010268000A (ja) * 2010-08-11 2010-11-25 Go Foton Holdings Inc アバランシェフォトダイオードおよびその製造方法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
KR900000074B1 (ko) * 1981-10-02 1990-01-19 미쓰다 가쓰시게 광 검출용 반도체장치
FR2518817A1 (fr) * 1981-12-23 1983-06-24 Thomson Csf Photodiode a zones d'absorption et d'avalanche separees
DE3227263C2 (de) * 1982-07-21 1984-05-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer planaren Avalanche-Fotodiode mit langwelliger Empfindlichkeitsgrenze über 1,3 &mu;
JPS5984589A (ja) * 1982-11-08 1984-05-16 Fujitsu Ltd アバランシフオトダイオード
JPS5994474A (ja) * 1982-11-19 1984-05-31 Nec Corp ヘテロ接合光検出器
US4611388A (en) * 1983-04-14 1986-09-16 Allied Corporation Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor
US4529996A (en) * 1983-04-14 1985-07-16 Allied Coporation Indium phosphide-boron phosphide heterojunction bipolar transistor
EP0150564A3 (en) * 1983-10-26 1986-05-14 AT&T Corp. Electronic device comprising a heterojunction
US4651187A (en) * 1984-03-22 1987-03-17 Nec Corporation Avalanche photodiode
US4586066A (en) * 1984-04-10 1986-04-29 Rca Inc. Avalanche photodetector
CA1228663A (en) * 1984-04-10 1987-10-27 Paul P. Webb Photodetector with isolated avalanche region
CA1228662A (en) * 1984-04-10 1987-10-27 Paul P. Webb Double mesa avalanche photodetector
CA1228661A (en) * 1984-04-10 1987-10-27 Rca Inc. Avalanche photodetector
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
JPS611064A (ja) * 1984-05-31 1986-01-07 Fujitsu Ltd 半導体受光装置
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
FR2581482B1 (fr) * 1985-05-03 1987-07-10 Labo Electronique Physique Photodiode pin a faible courant de fuite
US4700209A (en) * 1985-10-30 1987-10-13 Rca Inc. Avalanche photodiode and a method of making same
JPS62259481A (ja) * 1986-04-15 1987-11-11 Fujitsu Ltd 半導体受光装置
DE3850157T2 (de) * 1987-03-23 1995-02-09 Hitachi Ltd Photoelektrische Umwandlungsanordnung.
CA1280196C (en) * 1987-07-17 1991-02-12 Paul Perry Webb Avanlanche photodiode
US4857982A (en) * 1988-01-06 1989-08-15 University Of Southern California Avalanche photodiode with floating guard ring
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
DE69033657T2 (de) * 1989-08-04 2001-05-03 Canon K.K., Tokio/Tokyo Photoelektrischer umwandler
JPH03270277A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd 半導体受光素子
US6515315B1 (en) * 1999-08-05 2003-02-04 Jds Uniphase, Corp. Avalanche photodiode for high-speed applications
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
JP4170004B2 (ja) * 2002-03-28 2008-10-22 日本板硝子株式会社 化合物半導体積層膜構造
US7135715B2 (en) * 2004-01-07 2006-11-14 Cree, Inc. Co-doping for fermi level control in semi-insulating Group III nitrides
JP2006237186A (ja) * 2005-02-24 2006-09-07 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP4956944B2 (ja) * 2005-09-12 2012-06-20 三菱電機株式会社 アバランシェフォトダイオード
US7553734B2 (en) * 2005-10-17 2009-06-30 Princeton Lightwave, Inc. Method for forming an avalanche photodiode
JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
FR2906082B1 (fr) * 2006-09-18 2008-10-31 Commissariat Energie Atomique Photodiode a avalanche
FR2938374B1 (fr) * 2008-11-10 2011-02-11 Commissariat Energie Atomique Photodetecteur a gain interne et detecteur comportant une matrice de tels photodetecteurs
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
RU2654386C1 (ru) * 2016-12-27 2018-05-17 Акционерное общество "НПО "Орион" Способ изготовления планарного лавинного фотодиода
CN109841701B (zh) * 2017-11-24 2021-09-10 比亚迪半导体股份有限公司 光电二极管及其制造工艺
US11322639B2 (en) * 2020-04-09 2022-05-03 Globalfoundries U.S. Inc. Avalanche photodiode
US11316064B2 (en) 2020-05-29 2022-04-26 Globalfoundries U.S. Inc. Photodiode and/or PIN diode structures
US11611002B2 (en) 2020-07-22 2023-03-21 Globalfoundries U.S. Inc. Photodiode and/or pin diode structures
US11424377B2 (en) 2020-10-08 2022-08-23 Globalfoundries U.S. Inc. Photodiode with integrated, light focusing element
US11949034B2 (en) 2022-06-24 2024-04-02 Globalfoundries U.S. Inc. Photodetector with dual doped semiconductor material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
FR2408915A1 (fr) * 1977-11-10 1979-06-08 Thomson Csf Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation
JPS54124991A (en) * 1978-03-23 1979-09-28 Fujitsu Ltd Semiconductor luminous unit
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
JPS5654080A (en) * 1979-10-08 1981-05-13 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154276A (ja) * 1982-03-10 1983-09-13 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド
JPS6451674A (en) * 1987-08-24 1989-02-27 Hitachi Ltd Semiconductor photodetector
JP2007129033A (ja) * 2005-11-02 2007-05-24 Nippon Sheet Glass Co Ltd アバランシェフォトダイオードおよびその製造方法
JP2008251729A (ja) * 2007-03-29 2008-10-16 Eudyna Devices Inc 受光素子の製造方法
JP4520480B2 (ja) * 2007-03-29 2010-08-04 住友電工デバイス・イノベーション株式会社 受光素子の製造方法
JP2010268000A (ja) * 2010-08-11 2010-11-25 Go Foton Holdings Inc アバランシェフォトダイオードおよびその製造方法

Also Published As

Publication number Publication date
EP0156156A1 (en) 1985-10-02
US4481523A (en) 1984-11-06
EP0053513B1 (en) 1987-10-28
EP0053513A3 (en) 1983-01-19
EP0053513A2 (en) 1982-06-09
DE3176503D1 (en) 1987-12-03
JPS6146078B2 (ja) 1986-10-11

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