JPS6451674A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS6451674A JPS6451674A JP62208118A JP20811887A JPS6451674A JP S6451674 A JPS6451674 A JP S6451674A JP 62208118 A JP62208118 A JP 62208118A JP 20811887 A JP20811887 A JP 20811887A JP S6451674 A JPS6451674 A JP S6451674A
- Authority
- JP
- Japan
- Prior art keywords
- window
- central part
- sinx film
- layer
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent edge breakdown and the generation of dark current, and form an element structure excellent in reproducibility, by bending the element in the manner in which the central part of a main junction becomes deep as compared with the peripheral part, and making said central part approach a region of high carrier concentration. CONSTITUTION:On a light absorbing layer 3, a multiplying layer 4 and a window layer 5, an SiNx film 12 is formed, while Cd is diffused from a ring type window to form a guard ring junction, and a P-type region 7 is formed. An SiNx film 13 is again formed, a circular window 14 is perforated, and a P-type region 15 is formed by diffusing Zn for a main junction. Then, an SiNx film 16' is again formed, a ring-type window 17 is formed, and heat-treating is performed at 550 deg.C. Thus, a P-type region of the Zn diffusion part 15 extends, and becomes a main junction having a gentle bend as a whole. The central part of the Zn diffusion part 15 reaches the multiplying layer 4. Thereby preventing the edge breakdown and forming an excellent APD whose dark current is small.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62208118A JP2664158B2 (en) | 1987-08-24 | 1987-08-24 | Method for manufacturing semiconductor light receiving device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62208118A JP2664158B2 (en) | 1987-08-24 | 1987-08-24 | Method for manufacturing semiconductor light receiving device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6451674A true JPS6451674A (en) | 1989-02-27 |
JP2664158B2 JP2664158B2 (en) | 1997-10-15 |
Family
ID=16550932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62208118A Expired - Lifetime JP2664158B2 (en) | 1987-08-24 | 1987-08-24 | Method for manufacturing semiconductor light receiving device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2664158B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992386A (en) * | 1988-12-14 | 1991-02-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor light detector |
US5114866A (en) * | 1989-02-10 | 1992-05-19 | Hitachi, Ltd. | Fabricating an avalanche photo diode having a step-like distribution |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53112057A (en) * | 1977-03-11 | 1978-09-30 | Hitachi Ltd | Production of semiconductor device |
JPS5419370A (en) * | 1977-07-13 | 1979-02-14 | Fujitsu Ltd | Production of semiconductor devices |
JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
JPS5830164A (en) * | 1981-08-17 | 1983-02-22 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photodiode and manufacture thereof |
JPS6156470A (en) * | 1984-08-28 | 1986-03-22 | Fujitsu Ltd | Manufacture of semiconductor photodetector |
-
1987
- 1987-08-24 JP JP62208118A patent/JP2664158B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53112057A (en) * | 1977-03-11 | 1978-09-30 | Hitachi Ltd | Production of semiconductor device |
JPS5419370A (en) * | 1977-07-13 | 1979-02-14 | Fujitsu Ltd | Production of semiconductor devices |
JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
JPS5830164A (en) * | 1981-08-17 | 1983-02-22 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photodiode and manufacture thereof |
JPS6156470A (en) * | 1984-08-28 | 1986-03-22 | Fujitsu Ltd | Manufacture of semiconductor photodetector |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992386A (en) * | 1988-12-14 | 1991-02-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor light detector |
US5114866A (en) * | 1989-02-10 | 1992-05-19 | Hitachi, Ltd. | Fabricating an avalanche photo diode having a step-like distribution |
Also Published As
Publication number | Publication date |
---|---|
JP2664158B2 (en) | 1997-10-15 |
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