JPS6451674A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS6451674A
JPS6451674A JP62208118A JP20811887A JPS6451674A JP S6451674 A JPS6451674 A JP S6451674A JP 62208118 A JP62208118 A JP 62208118A JP 20811887 A JP20811887 A JP 20811887A JP S6451674 A JPS6451674 A JP S6451674A
Authority
JP
Japan
Prior art keywords
window
central part
sinx film
layer
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62208118A
Other languages
Japanese (ja)
Other versions
JP2664158B2 (en
Inventor
Kazuhiro Ito
Ichiro Fujiwara
Hiroshi Matsuda
Kazuyuki Nagatsuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62208118A priority Critical patent/JP2664158B2/en
Publication of JPS6451674A publication Critical patent/JPS6451674A/en
Application granted granted Critical
Publication of JP2664158B2 publication Critical patent/JP2664158B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent edge breakdown and the generation of dark current, and form an element structure excellent in reproducibility, by bending the element in the manner in which the central part of a main junction becomes deep as compared with the peripheral part, and making said central part approach a region of high carrier concentration. CONSTITUTION:On a light absorbing layer 3, a multiplying layer 4 and a window layer 5, an SiNx film 12 is formed, while Cd is diffused from a ring type window to form a guard ring junction, and a P-type region 7 is formed. An SiNx film 13 is again formed, a circular window 14 is perforated, and a P-type region 15 is formed by diffusing Zn for a main junction. Then, an SiNx film 16' is again formed, a ring-type window 17 is formed, and heat-treating is performed at 550 deg.C. Thus, a P-type region of the Zn diffusion part 15 extends, and becomes a main junction having a gentle bend as a whole. The central part of the Zn diffusion part 15 reaches the multiplying layer 4. Thereby preventing the edge breakdown and forming an excellent APD whose dark current is small.
JP62208118A 1987-08-24 1987-08-24 Method for manufacturing semiconductor light receiving device Expired - Lifetime JP2664158B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208118A JP2664158B2 (en) 1987-08-24 1987-08-24 Method for manufacturing semiconductor light receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208118A JP2664158B2 (en) 1987-08-24 1987-08-24 Method for manufacturing semiconductor light receiving device

Publications (2)

Publication Number Publication Date
JPS6451674A true JPS6451674A (en) 1989-02-27
JP2664158B2 JP2664158B2 (en) 1997-10-15

Family

ID=16550932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208118A Expired - Lifetime JP2664158B2 (en) 1987-08-24 1987-08-24 Method for manufacturing semiconductor light receiving device

Country Status (1)

Country Link
JP (1) JP2664158B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
US5114866A (en) * 1989-02-10 1992-05-19 Hitachi, Ltd. Fabricating an avalanche photo diode having a step-like distribution

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112057A (en) * 1977-03-11 1978-09-30 Hitachi Ltd Production of semiconductor device
JPS5419370A (en) * 1977-07-13 1979-02-14 Fujitsu Ltd Production of semiconductor devices
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS5830164A (en) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode and manufacture thereof
JPS6156470A (en) * 1984-08-28 1986-03-22 Fujitsu Ltd Manufacture of semiconductor photodetector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112057A (en) * 1977-03-11 1978-09-30 Hitachi Ltd Production of semiconductor device
JPS5419370A (en) * 1977-07-13 1979-02-14 Fujitsu Ltd Production of semiconductor devices
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS5830164A (en) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode and manufacture thereof
JPS6156470A (en) * 1984-08-28 1986-03-22 Fujitsu Ltd Manufacture of semiconductor photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
US5114866A (en) * 1989-02-10 1992-05-19 Hitachi, Ltd. Fabricating an avalanche photo diode having a step-like distribution

Also Published As

Publication number Publication date
JP2664158B2 (en) 1997-10-15

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