JPS5575274A - Semiconductor light detecting device - Google Patents

Semiconductor light detecting device

Info

Publication number
JPS5575274A
JPS5575274A JP14776078A JP14776078A JPS5575274A JP S5575274 A JPS5575274 A JP S5575274A JP 14776078 A JP14776078 A JP 14776078A JP 14776078 A JP14776078 A JP 14776078A JP S5575274 A JPS5575274 A JP S5575274A
Authority
JP
Japan
Prior art keywords
substrate
recess
diffusion
constitution
guardring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14776078A
Other languages
Japanese (ja)
Inventor
Yoshiharu Horikoshi
Yoshifumi Takanashi
Takashi Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14776078A priority Critical patent/JPS5575274A/en
Publication of JPS5575274A publication Critical patent/JPS5575274A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To minimize the damage of substrate crystal, by providing an annular etched recess on a light reception surface and diffusing an impurity around the etched recess to produce a guardring diffused region.
CONSTITUTION: An n+-type semiconductor layer 2 is provided on one side of a p- type semiconductor substrate 1. An annular etched recess 6 is provided on the peripheral part of the substrate 1 so that the recess extends on both the sides of a pn-junction between the substrate 1 and the semiconductor layer 2. An n-type guardring diffused region 3 is provided around the recess 6. A light reception surface electrode 4 is provided on the outside surface of the region 3. A substrate electrode 5 is provided on another side of the substrate 1. According to this constitution, deep diffusion is not needed, a diffusion temperature is held down and diffusion time is shortened. Therefore, the damage of the substrate crystal is minimized, a leakage current under an inverse bias is greatly reduced and the device is made compact.
COPYRIGHT: (C)1980,JPO&Japio
JP14776078A 1978-12-01 1978-12-01 Semiconductor light detecting device Pending JPS5575274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14776078A JPS5575274A (en) 1978-12-01 1978-12-01 Semiconductor light detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14776078A JPS5575274A (en) 1978-12-01 1978-12-01 Semiconductor light detecting device

Publications (1)

Publication Number Publication Date
JPS5575274A true JPS5575274A (en) 1980-06-06

Family

ID=15437533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14776078A Pending JPS5575274A (en) 1978-12-01 1978-12-01 Semiconductor light detecting device

Country Status (1)

Country Link
JP (1) JPS5575274A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193177A (en) * 1975-02-14 1976-08-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193177A (en) * 1975-02-14 1976-08-16

Similar Documents

Publication Publication Date Title
GB1059739A (en) Semiconductor element and device and method fabricating the same
ATE59116T1 (en) MULTIPLE JUNCTION SEMICONDUCTOR ARRANGEMENTS.
JPS55128869A (en) Semiconductor device and method of fabricating the same
GB1357432A (en) Semiconductor devices
JPS6489365A (en) Semiconductor device
GB1231493A (en)
JPS5575274A (en) Semiconductor light detecting device
JPS5687380A (en) Semiconductor device for detection of radiant light
JPS5583271A (en) Semiconductor device
JPS5588372A (en) Lateral type transistor
JPS54141596A (en) Semiconductor device
JPS5548964A (en) High-voltage-resisting planar semiconductor device
JPS5563879A (en) Semiconductor device
JPS5596671A (en) Semiconductor device
JPS564275A (en) Semiconductor device
JPS5773932A (en) High tension-resisting planer-type semiconductor device
JPS564277A (en) Manufacture of semiconductor device
JPS57139971A (en) Semiconductor device with high withstand voltage
JPS5586150A (en) Manufacture of semiconductor device
JPS5632763A (en) Semiconductor device
JPS6428872A (en) Semiconductor element for detecting radiation
JPS5578568A (en) Manufacture of semiconductor device
JPS52116079A (en) Heat treatment of semiconductor device
JPS5612779A (en) Zener diode
GB995527A (en) Alloy-diffused transistor