JPS5780739A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS5780739A
JPS5780739A JP55155945A JP15594580A JPS5780739A JP S5780739 A JPS5780739 A JP S5780739A JP 55155945 A JP55155945 A JP 55155945A JP 15594580 A JP15594580 A JP 15594580A JP S5780739 A JPS5780739 A JP S5780739A
Authority
JP
Japan
Prior art keywords
layer
electrode
layer structure
specific resistance
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55155945A
Other languages
English (en)
Japanese (ja)
Inventor
Osamu Kasahara
Shinji Shimizu
Hiroyuki Miyazawa
Kensuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP55155945A priority Critical patent/JPS5780739A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to DE19813141195 priority patent/DE3141195A1/de
Priority to FR8120237A priority patent/FR2494042B1/fr
Priority to GB8133069A priority patent/GB2087148B/en
Priority to IT24891/81A priority patent/IT1140271B/it
Publication of JPS5780739A publication Critical patent/JPS5780739A/ja
Priority to GB08331916A priority patent/GB2134706B/en
Priority to SG32686A priority patent/SG32686G/en
Priority to HK446/86A priority patent/HK44686A/xx
Priority to HK705/86A priority patent/HK70586A/xx
Priority to MY583/86A priority patent/MY8600583A/xx
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP55155945A 1980-11-07 1980-11-07 Semiconductor integrated circuit device and manufacture thereof Pending JPS5780739A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP55155945A JPS5780739A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device and manufacture thereof
DE19813141195 DE3141195A1 (de) 1980-11-07 1981-10-16 Integrierte halbleiter-schaltungsanordnung und verfahren zu ihrer herstellung
FR8120237A FR2494042B1 (fr) 1980-11-07 1981-10-28 Dispositifs a semiconducteurs et procede pour fabriquer ces derniers
GB8133069A GB2087148B (en) 1980-11-07 1981-11-03 Composite conductor structure for semiconductor devices
IT24891/81A IT1140271B (it) 1980-11-07 1981-11-05 Dispositivo a semiconduttore e procedimento per la sua produzione
GB08331916A GB2134706B (en) 1980-11-07 1983-11-30 Composite conductor structure for semiconductor devices
SG32686A SG32686G (en) 1980-11-07 1986-04-08 Semiconductor devices and a process for producing the same
HK446/86A HK44686A (en) 1980-11-07 1986-06-19 Semiconductor integrated circuit devices and a process for producing the same
HK705/86A HK70586A (en) 1980-11-07 1986-09-18 Semiconductor devices and a process for producing the same
MY583/86A MY8600583A (en) 1980-11-07 1986-12-30 Semiconductor integrated circuit devices and a process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155945A JPS5780739A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5780739A true JPS5780739A (en) 1982-05-20

Family

ID=15616950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155945A Pending JPS5780739A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device and manufacture thereof

Country Status (7)

Country Link
JP (1) JPS5780739A (de)
DE (1) DE3141195A1 (de)
FR (1) FR2494042B1 (de)
GB (2) GB2087148B (de)
HK (2) HK44686A (de)
IT (1) IT1140271B (de)
MY (1) MY8600583A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248446A (ja) * 1985-04-25 1986-11-05 Fujitsu Ltd 半導体装置
JPS61248447A (ja) * 1985-04-25 1986-11-05 Fujitsu Ltd 配線層の形成方法
US5100824A (en) * 1985-04-01 1992-03-31 National Semiconductor Corporation Method of making small contactless RAM cell
US5340762A (en) * 1985-04-01 1994-08-23 Fairchild Semiconductor Corporation Method of making small contactless RAM cell

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
DE3218309A1 (de) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene
JPS593968A (ja) * 1982-06-29 1984-01-10 Mitsubishi Electric Corp 半導体集積回路装置
EP0120918B1 (de) * 1982-09-30 1991-12-18 Advanced Micro Devices, Inc. Aluminium-metall-silicid-verbindungsstruktur für integrierte schaltungen und deren herstellungsverfahren
US5136361A (en) * 1982-09-30 1992-08-04 Advanced Micro Devices, Inc. Stratified interconnect structure for integrated circuits
DE3304651A1 (de) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München Dynamische halbleiterspeicherzelle mit wahlfreiem zugriff (dram) und verfahren zu ihrer herstellung
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
JPS60134466A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置およびその製造方法
JPH067584B2 (ja) * 1984-04-05 1994-01-26 日本電気株式会社 半導体メモリ
US5061986A (en) * 1985-01-22 1991-10-29 National Semiconductor Corporation Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics
EP0490877A3 (en) 1985-01-22 1992-08-26 Fairchild Semiconductor Corporation Interconnection for an integrated circuit
US5227316A (en) * 1985-01-22 1993-07-13 National Semiconductor Corporation Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size
US5045916A (en) * 1985-01-22 1991-09-03 Fairchild Semiconductor Corporation Extended silicide and external contact technology
US5072275A (en) * 1986-02-28 1991-12-10 Fairchild Semiconductor Corporation Small contactless RAM cell
CA1235824A (en) * 1985-06-28 1988-04-26 Vu Q. Ho Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
SE8603963L (sv) * 1985-09-27 1987-03-28 Rca Corp Kontakt med lag resistans for ett halvledarorgan samt sett att framstella densamma
US4638400A (en) * 1985-10-24 1987-01-20 General Electric Company Refractory metal capacitor structures, particularly for analog integrated circuit devices
US4774207A (en) * 1987-04-20 1988-09-27 General Electric Company Method for producing high yield electrical contacts to N+ amorphous silicon
US4990995A (en) * 1987-09-08 1991-02-05 General Electric Company Low reflectance conductor in an integrated circuit
DE19836736C1 (de) * 1998-08-13 1999-12-30 Siemens Ag Kombinierte Vorlade- und Homogenisierschaltung
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813583B1 (de) * 1969-04-15 1973-04-27
JPS5295886A (en) * 1976-02-07 1977-08-11 Zaisui Ri Automatic treating movable scraps presser
JPS5465490A (en) * 1977-11-02 1979-05-26 Nec Corp Integrated circuit and its manufacture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380986A (en) * 1976-12-25 1978-07-17 Toshiba Corp Manufacture of semiconductor device
JPS583380B2 (ja) * 1977-03-04 1983-01-21 株式会社日立製作所 半導体装置とその製造方法
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
JPS5488783A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
IT1111823B (it) * 1978-03-17 1986-01-13 Rca Corp Dispositivo mosfet a bassa resistenza superficiale e metodo di fabbricazione dello stesso
DE2815605C3 (de) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit
DE2823855A1 (de) * 1978-05-31 1979-12-06 Fujitsu Ltd Verfahren zum herstellen einer halbleitervorrichtung
GB2061615A (en) * 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS5698873A (en) * 1980-01-07 1981-08-08 Nec Corp Integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813583B1 (de) * 1969-04-15 1973-04-27
JPS5295886A (en) * 1976-02-07 1977-08-11 Zaisui Ri Automatic treating movable scraps presser
JPS5465490A (en) * 1977-11-02 1979-05-26 Nec Corp Integrated circuit and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100824A (en) * 1985-04-01 1992-03-31 National Semiconductor Corporation Method of making small contactless RAM cell
US5340762A (en) * 1985-04-01 1994-08-23 Fairchild Semiconductor Corporation Method of making small contactless RAM cell
JPS61248446A (ja) * 1985-04-25 1986-11-05 Fujitsu Ltd 半導体装置
JPS61248447A (ja) * 1985-04-25 1986-11-05 Fujitsu Ltd 配線層の形成方法

Also Published As

Publication number Publication date
GB2134706B (en) 1985-04-17
GB2134706A (en) 1984-08-15
FR2494042B1 (fr) 1986-12-26
HK70586A (en) 1986-09-26
IT8124891A0 (it) 1981-11-05
DE3141195C2 (de) 1993-04-22
HK44686A (en) 1986-06-27
IT1140271B (it) 1986-09-24
GB2087148A (en) 1982-05-19
GB2087148B (en) 1985-04-11
FR2494042A1 (fr) 1982-05-14
DE3141195A1 (de) 1982-06-24
MY8600583A (en) 1986-12-31
GB8331916D0 (en) 1984-01-04

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